DTC144ERLRE [ONSEMI]
100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226, 3 PIN;
| 型号： | DTC144ERLRE |
| 厂家： | 
ONSEMI |
| 描述： | 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226, 3 PIN |
| 文件： | 总8页 (文件大小：171K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DTC114E Series
Preferred Devices
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the TO–92
package which is designed for through hole applications.
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NPN SILICON
BIAS RESISTOR
TRANSISTOR
PIN 3
COLLECTOR
(OUTPUT)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
Value
50
Unit
Vdc
R1
R2
V
CBO
PIN 2
BASE
(INPUT)
V
CEO
50
Vdc
PIN 1
EMITTER
(GROUND)
I
C
100
mAdc
Total Power Dissipation
P
D
@ T = 25°C (Note 1.)
350
mW
A
Derate above 25°C
2.81
mW/°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to
Ambient (surface mounted)
R
357
°C/W
θ
JA
1
2
Operating and Storage
Temperature Range
T , T
–55 to
+150
°C
J
stg
3
CASE 29
TO–92 (TO–226)
STYLE 1
Maximum Temperature for
Soldering Purposes,
Time in Solder Bath
T
L
260
10
°C
Sec
DEVICE MARKING AND RESISTOR VALUES
MARKING DIAGRAM
Device
Marking
R1 (K)
R2 (K)
Shipping
5000/Box
DTC114E
DTC124E
DTC144E
DTC114Y
DTC114T
DTC143T
DTD113E
DTC123E
DTC143E
DTC143Z
DTC114E
DTC124E
DTC144E
DTC114Y
DTC114T
DTC143T
DTD113E
DTC123E
DTC143E
DTC143Z
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
10
22
47
47
∞
DTC1xxx
YWW
∞
1.0
2.2
4.7
47
DTC1 = Specific Device Code
xxx
Y
WW
= (See Table)
= Year
= Work Week
1. Device mounted on a FR–4 glass epoxy printed circuit board using the
minimum recommended footprint.
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2001
402
Publication Order Number:
January, 2001 – Rev. 2
DTC114E/D
DTC114E Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Base Cutoff Current (V = 50 V, I = 0)
I
I
–
–
–
–
100
500
nAdc
nAdc
mAdc
CB
E
CBO
Collector–Emitter Cutoff Current (V = 50 V, I = 0)
CE
B
CEO
Emitter–Base Cutoff Current
(V = 6.0 V, I = 0)
DTC114E
DTC124E
DTC144E
DTC114Y
DTC114T
DTC143T
DTD113E
DTC123E
DTC143E
DTC143Z
I
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
EBO
EB
C
Collector–Base Breakdown Voltage (I = 10 µA, I = 0)
V
V
50
50
–
–
–
–
Vdc
Vdc
C
E
(BR)CBO
Collector–Emitter Breakdown Voltage (Note 2.)
(BR)CEO
(I = 2.0 mA, I = 0)
C
B
ON CHARACTERISTICS (Note 2.)
DC Current Gain
DTC114E
DTC124E
DTC144E
DTC114Y
DTC114T
DTC143T
DTD113E
DTC123E
DTC143E
DTC143Z
h
FE
35
60
80
60
100
140
140
350
350
5.0
15
–
–
–
–
–
–
–
–
–
–
(V = 10 V, I = 5.0 mA)
CE
C
80
160
160
3.0
8.0
15
30
200
80
Collector–Emitter Saturation Voltage
(I = 10 mA, I = 0.3 mA) DTC144E/DTC114Y
V
–
–
0.25
Vdc
Vdc
CE(sat)
C
E
(I = 10 mA, I = 0.3 mA) DTD113E/DTC143E
C
B
(I = 10 mA, I = 5 mA) DTC123E
C
B
(I = 10 mA, I = 1 mA) DTC114T/DTC143T/
C
B
(I = 10 mA, I = 1 mA) DTC143Z/DTC124E
C
B
Output Voltage (on)
(V = 5.0 V, V = 2.5 V, R = 1.0 kΩ)
V
OL
DTC114E
DTC124E
DTC114Y
DTC114T
DTC143T
DTD113E
DTC123E
DTC143E
DTC143Z
DTC144E
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
CC
B
L
(V = 5.0 V, V = 3.5 V, R = 1.0 kΩ)
CC
B
L
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
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403
DTC114E Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (off)
(V = 5.0 V, V = 0.5 V, R = 1.0 kΩ)
V
OH
4.9
–
–
Vdc
DTC114E
DTC124E
DTC144E
DTC114Y
DTC123E
DTC143E
DTD113E
DTC114T
DTC143T
DTC143Z
CC
B
L
(V = 5.0 V, V = 0.05 V, R = 1.0 kΩ)
CC
B
L
(V = 5.0 V, V = 0.25 V, R = 1.0 kΩ)
CC
B
L
Input Resistor
DTC114E
DTC124E
DTC144E
DTC114Y
DTC114T
DTC143T
DTD113E
DTC123E
DTC143E
DTC143Z
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
13
28.6
61.1
13
kΩ
13
6.1
1.3
2.9
6.1
6.1
Resistor Ratio
DTC114E/DTC124E/DTC144E
DTC114Y
DTC114T/DTC143T
DTD113E/DTC123E/DTC143E
DTC143Z
R /R
0.8
0.17
–
0.8
0.055
1.0
0.21
–
1.0
0.1
1.2
0.25
–
1.2
0.185
1
2
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404
DTC114E Series
TYPICAL ELECTRICAL CHARACTERISTICS
DTC114E
250
200
1
I /I = 10
C
B
T Ă=Ă-25°C
A
25°C
75°C
0.1
150
100
50
0.01
R
θ
= 625°C/W
JA
0
0.001
-50
0
50
100
150
0
20
40
60
80
50
50
T , AMBIENT TEMPERATURE (°C)
I , COLLECTOR CURRENT (mA)
A
C
Figure 1. Derating Curve
Figure 2. VCE(sat) versus IC
4
3
1000
100
10
V
CE
= 10 V
f = 1 MHz
l = 0 V
E
T Ă=Ă75°C
A
T = 25°C
A
25°C
-25°C
2
1
0
0
10
20
30
40
1
10
100
V , REVERSE BIAS VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mA)
C
Figure 4. Output Capacitance
Figure 3. DC Current Gain
100
10
10
25°C
T Ă=Ă-25°C
A
V = 0.2 V
75°C
O
T Ă=Ă-25°C
A
25°C
75°C
1
0.1
1
0.01
0.001
V = 5 V
O
0.1
0
1
2
3
4
5
6
7
8
9
10
0
10
20
30
40
V , INPUT VOLTAGE (VOLTS)
in
I , COLLECTOR CURRENT (mA)
C
Figure 5. VCE(sat) versus IC
Figure 6. VCE(sat) versus IC
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405
DTC114E Series
TYPICAL ELECTRICAL CHARACTERISTICS
DTC124E
1000
1
V
CE
= 10 V
I /I = 10
C
B
T Ă=Ă-25°C
A
T Ă=Ă75°C
A
25°C
75°C
25°C
0.1
-25°C
100
0.01
-
10
0.001
0
20
40
60
80
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4
3
2
1
0
100
10
1
75°C
25°C
f = 1 MHz
T Ă=Ă-25°C
A
l = 0 V
E
T = 25°C
A
0.1
0.01
V = 5 V
O
0.001
0
10
20
30
40
50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
V = 0.2 V
O
T Ă=Ă-25°C
A
10
1
25°C
75°C
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 11. Input Voltage versus Output Current
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406
DTC114E Series
TYPICAL ELECTRICAL CHARACTERISTICS
DTC144E
10
1000
I /I = 10
T Ă=Ă-25°C
A
C
B
V
CE
= 10 V
T Ă=Ă75°C
A
25°C
75°C
25°C
1
-25°C
100
0.1
0.01
10
1
10
100
0
20
40
60
80
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1
100
10
1
25°C
75°C
f = 1 MHz
l = 0 V
E
0.8
T Ă=Ă-25°C
A
T = 25°C
A
0.6
0.4
0.1
0.01
0.2
0
V = 5 V
O
0.001
0
10
20
30
40
50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
V = 0.2 V
O
T Ă=Ă-25°C
A
25°C
75°C
10
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 16. Input Voltage versus Output Current
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407
DTC114E Series
TYPICAL ELECTRICAL CHARACTERISTICS
DTC114Y
1
0.1
300
T Ă=Ă-25°C
I /I = 10
T Ă=Ă75°C
A
C
B
A
V
CE
= 10
250
200
150
100
25°C
75°C
25°C
-25°C
0.01
50
0
0.001
0
20
40
60
ā80
1
2
4
6
8
10 15 20 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 17. VCE(sat) versus IC
Figure 18. DC Current Gain
4
3.5
3
100
10
1
75°C
25°C
f = 1 MHz
l = 0 V
E
T = 25°C
A
2.5
T Ă=Ă-25°C
A
2
1.5
1
0.5
0
V = 5 V
O
0
2
4
6
8
10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
10
T Ă=Ă-25°C
A
V = 0.2 V
O
25°C
75°C
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 21. Input Voltage versus Output Current
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408
DTC114E Series
TYPICAL APPLICATIONS FOR NPN BRTs
+12 V
ISOLATED
LOAD
FROM µP OR
OTHER LOGIC
Figure 22. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
+12 V
V
CC
OUT
IN
LOAD
Figure 23. Open Collector Inverter: Inverts
the Input Signal
Figure 24. Inexpensive, Unregulated Current Source
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409
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