ECH8310-TL-H [ONSEMI]
P 沟道功率 MOSFET，-30 V，-9 A，17mΩ;
| 型号： | ECH8310-TL-H |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道功率 MOSFET，-30 V，-9 A，17mΩ PC |
| 文件： | 总5页 (文件大小：1009K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1430B
ECH8310
P-Channel Power MOSFET
http://onsemi.com
–
–
Ω
30V, 9A, 17m , Single ECH8
Features
•
4V drive
•
Halogen free compliance
•
Protection diode in
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
--30
Unit
V
V
V
DSS
GSS
±20
V
I
I
--9
A
D
Drain Current (Pulse)
PW 10 s, duty cycle 1%
--60
A
≤
μ
≤
DP
Allowable Power Dissipation
Channel Temperature
Storage Temperature
P
When mounted on ceramic substrate (900mm2 0.8mm)
1.5
W
°C
°C
×
D
Tch
150
Tstg
--55 to +150
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: ECH8
7011A-002
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 3,000 pcs./reel
Top View
2.9
ECH8310-TL-H
Packing Type : TL
Marking
0.15
8
5
JM
0 to 0.02
Lot No.
TL
4
1
0.65
0.3
Electrical Connection
8
7
6
5
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
ECH8
1
2
3
4
Bottom View
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
March, 2014
30714HK/60612TKIM/O1409TKIM TC-00002092 PE No. A1430-1/5
ECH8310
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
--30
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
I =-- 1mA, V =0V
D GS
(BR)DSS
V
V
V
V
I
=-- 30V, V =0V
GS
--1
A
A
μ
DSS
GSS
DS
GS
DS
DS
I
=±16V, V =0V
DS
±10
μ
V
(off)
|
=-- 10V, I =-- 1mA
D
--1.2
--2.6
V
GS
yfs
Forward Transfer Admittance
=-- 10V, I =-- 4.5A
D
12
S
|
R
R
R
(on)1
DS
(on)2
DS
(on)3
DS
=--4.5A, V =-- 10V
GS
9
12
13
20
17
28
m
Ω
Ω
Ω
D
Static Drain-to-Source On-State Resistance
I
D
I
D
=-- 2A, V =-- 4.5V
GS
m
m
=-- 2A, V =-- 4.0V
GS
13.5
23
32.5
Input Capacitance
Ciss
1400
350
250
10
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=--10V, f=1MHz
DS
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
t (on)
d
t
45
r
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
t (off)
d
134
87
t
f
Total Gate Charge
Qg
28
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=-- 15V, V =-- 10V, I =-- 9A
DS GS
4
D
6
V
I =-- 9A, V =0V
S GS
--0.8
--1.2
SD
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
V
= --15V
V
DD
IN
0V
--10V
I
= --4.5A
D
V
IN
R =3.3Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
ECH8310
P. G
50Ω
S
Ordering Information
Device
Package
ECH8
Shipping
memo
ECH8310-TL-H
3,000pcs./reel
Pb Free and Halogen Free
No. A1430-2/5
ECH8310
I
-- V
I
-- V
D GS
D
DS
--9
--8
--7
--6
--5
--4
--3
--2
--9
--8
--7
--6
--5
--4
--3
--2
V
= --10V
DS
--1
0
--1
0
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
Gate-to-Source Voltage, V -- V
IT14478
GS
--3.5
Drain-to-Source Voltage, V
-- V
IT15075
DS
R
(on) -- V
R
(on) -- Ta
DS
DS
GS
40
35
30
25
20
15
10
80
70
60
50
40
30
20
Ta=25°C
I
= --2A
D
--4.5A
5
0
10
0
--60 --40 --20
0
20
40
60
80 100 120 140 160
IT14480
0
--2
--4
--6
--8
--10
--12
--14
--16
Gate-to-Source Voltage, V
-- V
Ambient Temperature, Ta -- °C
IT14479
GS
| yfs | -- I
I
-- V
D
S
SD
5
2
V
= --10V
V
=0V
DS
GS
--10
3
2
7
5
3
2
10
7
5
--1.0
7
5
3
2
3
2
--0.1
7
5
3
2
1.0
7
5
--0.01
3
2
7
5
3
2
0.1
7
--0.01
--0.001
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
2
3
5
7
2
3
5
7
2
3
5
7
2
--0.1
--1.0
--10
IT14481
Drain Current, I -- A
Diode Forward Voltage, V
SD
Ciss, Coss, Crss -- V
-- V
IT14482
D
SW Time -- I
D
DS
3
2
5
V
= --15V
= --10V
f=1MHz
DD
V
GS
3
2
100
7
5
1000
7
5
3
2
3
2
t (on)
d
10
7
5
--0.1
100
2
3
5
7
2
3
5
7
2
0
--2
--4
--6
--8
--10 --12 --14 --16 --18 --20
--1.0
--10
Drain Current, I -- A
IT14483
IT14484
Drain-to-Source Voltage, V
DS
-- V
D
No. A1430-3/5
ECH8310
V
-- Qg
A S O
GS
2
--10
--8
V
= --15V
= --9A
DS
--100
I
= --60A
DP
PW≤10μs
7
5
3
2
I
D
I = --9A
D
--10
7
5
--6
3
2
--1.0
7
Operation in this
area is limited by R (on).
--4
5
3
2
DS
--0.1
--2
0
7
5
3
2
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm)
--0.01
--0.01
2
3
5
7
2
3
5
7
--1.0
2
3
5
7
--10
2
3
5
0
5
10
15
20
25
30
IT14485
--0.1
Total Gate Charge, Qg -- nC
Drain-to-Source Voltage, V
DS
-- V
IT14500
P
-- Ta
D
1.8
When mounted on ceramic substrate
(900mm2×0.8mm)
1.6
1.5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
IT14486
Ambient Temperature, Ta -- °C
No. A1430-4/5
ECH8310
Outline Drawing
Land Pattern Example
ECH8310-TL-H
Mass (g) Unit
Unit: mm
0.02
mm
* For reference
0.4
0.65
Note on usage : Since the ECH8310 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1430-5/5
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