ECH8655R-TL-H [ONSEMI]
Dual N-Channel Power MOSFET 24V, 9A, 17mΩ;
| 型号： | ECH8655R-TL-H |
| 厂家： | 
ONSEMI |
| 描述： | Dual N-Channel Power MOSFET 24V, 9A, 17mΩ |
| 文件： | 总7页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ECH8655R-R-TL-H
N-Channel Power MOSFET
24 V, 9 A, 16 mW, Dual ECH8
Features
• Low ON−resistance
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• 2.5 V Drive
• Common−drain Type
• Protection Diode in
• Built−in Gate Protection Resistor
• Best Suited for LiB Charging and Discharging Switch
• This Device is Pb−Free and are RoHS Compliant
SOT−28FL / ECH8
CASE 318BF
Product & Package Information
• Package:
ECH8
−
3,000 Pcs./Reel
GENERIC MARKING
DIAGRAM
• JEITA, JEDEC:
• Minimum Packing Quantity:
TA
Lot No.
Unit : mm (typ)
7011A−003
TopView
ECH8655R−R−TL−H
2.9
ELECTRICAL CONNECTION
0.15
8
5
8
7
6
5
0 to 0.02
4
1
0.65
0.3
1
2
3
4
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
PACKING TYPE: TL
6 : Drain
7 : Drain
8 : Drain
TL
ECH8
Bottom View
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
Figure 1. Package Dimensions
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
September, 2018 − Rev. 2
ECH8655R/D
ECH8655R−R−TL−H
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS at T = 25°C
A
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
24
12
9
DSS
GSS
V
V
I
D
A
PW ≤ 10 ms, duty cycle ≤ 1%
Drain Current (Pulse)
Allowable Power Dissipation
I
60
1.4
A
DP
2
When mounted on ceramic substrate (900 mm × 0.8 mm)
1 unit
P
W
D
2
When mounted on ceramic substrate (900 mm × 0.8 mm)
Total Dissipation
P
1.5
150
W
°C
°C
T
Channel Temperature
Storage Temperature
T
ch
T
stg
−55 to +150
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS at T = 25°C
A
Ratings
Parameter
Symbol
Conditions
= 1 mA,
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
I
24
V
(BR)DSS
D
V
= 0 V
GS
I
V
= 20 V,
GS
1
mA
mA
V
Zero−Gate Voltage Drain Current
Gate−to−Source Leakage Current
Cutoff Voltage
DSS
DS
V
= 0V
I
V
=
DS
8 V,
10
1.3
GSS
GS
V
= 0 V
V
(off)
V
= 10 V,
= 1 mA
0.5
4.8
10
GS
DS
I
D
| yfs |
Forward Transfer Admittance
V
= 10 V,
= 4.5 A
8
13
S
DS
I
D
Static Drain−to−Source On−State
Resistance
mW
mW
mW
mW
R
R
R
R
(on)1
I
= 4.5 A,
= 4.5 V
16
16.5
20
DS
DS
DS
DS
D
GS
V
(on)2
(on)3
(on)4
I
= 4.5 A,
= 4.0 V
13.5
15
10.5
11
D
GS
V
I
= 4.5 A,
= 3.1 V
D
GS
V
I
= 2 A,
= 2.5 V
18
24
13
D
V
GS
See specified
Test Circuit.
Turn−ON Delay Time
Rise Time
t (on)
320
1100
2400
2100
ns
ns
ns
ns
d
t
r
Turn−OFF Delay Time
Fall Time
t (off)
d
t
f
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2
ECH8655R−R−TL−H
ELECTRICAL CHARACTERISTICS at T = 25°C
A
Ratings
Typ
Min
Max
Parameter
Total Gate Charge
Symbol
Qg
Conditions
Unit
nC
nC
nC
V
V
= 10 V,
= 10 V,
= 9 A
16.8
DS
GS
D
V
I
Gate−to−Source Charge
Gate−to−Drain “Miller” Charge
Diode Forward Voltage
Qgs
1.6
4.8
0.8
Qgd
V
SD
I = 9 A,
1.2
S
GS
V
= 0 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
V
DD
= 10 V
V
IN
4.5 V
0 V
I
= 4.5 A
D
V
IN
R = 2.22 W
L
D
V
OUT
PW = 10 ms
D.C.≤ 1%
R
g
G
ECH8655R
P.G
50 W
S
Rg= 1 kW
Figure 2. Switching Time Test Circuit
ORDERING INFORMATION
Device
Package
Shipping
Memo
ECH8
3,000 pcs./reel
Pb Free and Halogen Free
ECH8655R−R−TL−H
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3
ECH8655R−R−TL−H
TYPICAL CHARACTERISTICS
9
8
7
9
8
7
6
5
4
3
2
V
= 10 V
DS
3.1 V
4 V
2.5 V
1.5 V
6
4.5 V
5
4
3
2
1
T = 75°C
A
−25°C
1
0
25°C
V
GS
= 1 V
0
0
0.5
1.0
1.5
2.0
0
0.1
0.2
0.3
0.4
0.5
V , Drain−to−Source Voltage (V)
DS
V , Gate−to−Source Voltage (V)
GS
Figure 3. ID − VDS
Figure 4. ID − VGS
40
35
T = 25°C
A
35
30
30
25
20
15
10
V
= 2.5 V, ID = 2 A
GS
V
GS
= 3.1 V, ID = 4.5 A
25
20
15
10
I
D
= 2 A
4.5 A
V
GS
= 4.5 V, ID = 4.5 A
V
GS
= 4 V, ID = 4.5 A
5
0
5
0
−50
0
50
100
150
200
0
2
4
6
8
10
V , Gate−to−Source Voltage (V)
GS
T , Ambient Temperature (ꢁC)
A
Figure 5. RDS(on) − VGS
Figure 6. RDS(on) − TA
10
10
7
5
V
DS
= 10 V
V
GS
= 0 V
3
7
5
2
1.0
7
T = −25°C
A
75°C
5
3
2
T = 75°C
A
25°C
0.1
7
3
2
5
25°C
3
−25°C
2
0.01
7
5
3
2
1.0
0.001
0.1
2
3
5
7
1.0
2
3
5
7
10
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
I , Drain Current (A)
D
V
SD
, Diode Forward Voltage (V)
Figure 7. ꢀyfsꢀ − ID
Figure 8. IS − VSD
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4
ECH8655R−R−TL−H
7
5
10
V
V
= 10 V
= 4 V
V
= 10 V
= 9 V
DD
DS
t (off)
d
I
D
GS
3
2
8
6
4
2
0
t
f
1000
t
r
7
5
t (on)
d
3
2
100
0.1
2
3
5
7
1.0
2
3
5
7
10
0
2
4
6
8
10
12
14
16
18
20
I , Drain Current (V)
D
Qg, Total Gate Charge (nC)
Figure 9. SW Time − ID
Figure 10. VGS − Qg
1.8
1.6
2
When mounted on ceramic substrate
(900mm x 0.8 mm)
100
I
= 60 A
= 9 A
PW ≤ 10 ms
DP
7
2
5
1.5
1.4
3
2
I
DP
10
1.2
1.0
0.8
0.6
0.4
7
5
3
2
Total Dissinpation
1 unit
1.0
7
Operation in this
area is limited by RDS(on)
5
3
2
T = 25°C
A
0.1
7
Single pulse
When mounted on ceramic substrate
(900mm x 0.8 mm) 1 unit
5
0.2
0
3
2
2
0.01
60
80
100
120
140
160
0
20
40
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
7
10
2
3
5
V , Drain−to−Source Voltage (V)
DS
T , Ambinet Temperature (ꢁC)
A
Figure 11. ASO
Figure 12. PD − TA
Since the ECH8655R−R−TL−H is a MOSFET product, please avoid using this device in the vicinity of highly charged
objects.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−28FL / ECH8
CASE 318BF
ISSUE O
DATE 31 MAR 2012
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON78700E
SOT−28FL / ECH8
PAGE 1 OF 1
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相关型号：
ECH8657TL
Power Field-Effect Transistor, 4.5A I(D), 35V, 0.059ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE, ECH8, 8 PIN
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