ECH8657-TL-H [ONSEMI]
双 N 沟道，功率 MOSFET，35V，4.5A，59mΩ;
| 型号： | ECH8657-TL-H |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 沟道，功率 MOSFET，35V，4.5A，59mΩ |
| 文件： | 总7页 (文件大小：303K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1710B
ECH8657
N-Channel Power MOSFET
http://onsemi.com
Ω
35V, 4.5A, 59m , Dual ECH8
Features
•
4V drive
•
Halogen free compliance
•
Protection diode in
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
35
DSS
V
±20
V
GSS
I
4.5
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
I
PW 10 s, duty cycle 1%
When mounted on ceramic substrate (1200mm2 0.8mm) 1unit
When mounted on ceramic substrate (1200mm2 0.8mm)
30
1.3
A
≤
μ
≤
DP
P
P
W
W
°C
°C
×
D
T
1.5
×
Channel Temperature
Storage Temperature
Tch
150
Tstg
--55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: ECH8
7011A-001
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 3,000 pcs./reel
ECH8657-TL-H
Top View
2.9
Packing Type : TL
Marking
0.15
8
5
TC
0 to 0.02
TL
Lot No.
4
1
Electrical Connection
0.65
0.3
8
7
6
5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
1
2
3
4
ECH8
Bottom View
Semiconductor Components Industries, LLC, 2013
July, 2013
61312 TKIM/D2210 TKIM/42810PE TKIM TC-00002338 No. A1710-1/7
ECH8657
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
35
(BR)DSS
D
GS
I
V
=35V, V =0V
1
A
A
μ
DSS
DS GS
I
V
=±16V, V =0V
±10
2.6
μ
GSS
GS DS
V
(off)
|
V
=10V, I =1mA
1.2
V
GS
yfs
DS D
Forward Transfer Admittance
V
=10V, I =2A
D
1.66
45
S
|
DS
R
R
R
(on)1
(on)2
(on)3
I
D
=2A, V =10V
GS
59
119
155
m
Ω
Ω
Ω
DS
DS
DS
Static Drain-to-Source On-State Resistance
I
D
=1A, V =4.5V
GS
85
m
m
I
D
=1A, V =4V
GS
110
230
37
Input Capacitance
Ciss
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=20V, f=1MHz
pF
pF
ns
DS
25
t
t
t
t
(on)
6
d
r
11
ns
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
17
ns
d
f
9
ns
Total Gate Charge
Qg
4.6
1.0
1.0
0.85
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=20V, V =10V, I =4.5A
GS
DS
D
V
SD
I =4.5A, V =0V
S GS
1.2
Switching Time Test Circuit
V
=20V
V
DD
IN
10V
0V
I
=2A
D
V
IN
R =10Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
ECH8657
P. G
50Ω
S
Ordering Information
Device
Package
ECH8
Shipping
3,000pcs./reel
memo
ECH8657-TL-H
Pb Free and Halogen Free
No. A1710-2/7
ECH8657
I
D
-- V
DS
I
-- V
D GS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
6
5
4
3
2
V
=10V
DS
1
0
V
=3.0V
GS
0.5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
Drain-to-Source Voltage, V
-- V
IT14210
Gate-to-Source Voltage, V
GS
-- V
IT14211
DS
R
(on) -- V
GS
R
(on) -- Ta
DS
DS
240
200
160
120
80
200
160
120
80
Ta=25°C
I
=1A
D
2A
40
0
40
0
0
2
4
6
8
10
12
14
16
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
-- V
IT16223
Ambient Temperature, Ta -- °C
IT14213
GS
| yfs | -- I
I
-- V
D
S SD
7
5
5
V
=10V
V
=0V
DS
GS
3
2
3
2
1.0
7
5
1.0
7
3
2
5
0.1
7
5
3
2
3
2
0.1
0.01
0.01
0.2
0.4
0.6
0.8
1.0
1.2
IT14215
2
3
5
7
2
3
5
7
1.0
2
3
5
7
0.1
Drain Current, I -- A
D
Diode Forward Voltage, V -- V
SD
IT14214
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
5
7
V
V
=15V
=10V
f=1MHz
DD
GS
5
3
2
3
2
100
10
7
5
t (on)
d
7
5
t
r
3
2
3
2
1.0
0.1
10
0
5
10
15
20
25
30
IT14217
2
3
5
7
2
3
5
7
1.0
10
Drain Current, I -- A
IT14216
Drain-to-Source Voltage, V
DS
-- V
D
No. A1710-3/7
ECH8657
V
GS
-- Qg
A S O
7
5
10
9
V
=10V
DS
=4.5A
(PW≤10μs)
I
=30A
DP
3
2
I
D
8
10
7
5
I =4.5A
D
7
3
2
6
1.0
7
5
5
Operation in this
4
3
2
area is limited by R (on).
DS
3
0.1
7
5
2
Ta=25°C
Single pulse
3
2
1
0
When mounted on ceramic substrate
(1200mm2×0.8mm) 1unit
0.01
0.1
0
1
2
3
4
5
2
3
5
7
2
3
5
7
2
3
5
7
1.0
10
Total Gate Charge, Qg -- nC
IT14218
Drain-to-Source Voltage, V
-- V
IT15504
DS
P
-- Ta
D
1.8
When mounted on ceramic substrate
(1200mm2×0.8mm)
1.6
1.5
1.4
1.3
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
IT15505
Ambient Temperature, Ta -- °C
No. A1710-4/7
ECH8657
Embossed Taping Specification
ECH8657-TL-H
No. A1710-5/7
ECH8657
Outline Drawing
Land Pattern Example
ECH8657-TL-H
Mass (g) Unit
Unit: mm
0.02
mm
* For reference
0.4
0.65
No. A1710-6/7
ECH8657
Note on usage : Since the ECH8657 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
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PS No. A1710-7/7
相关型号：
ECH8657TL
Power Field-Effect Transistor, 4.5A I(D), 35V, 0.059ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE, ECH8, 8 PIN
ONSEMI
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