ECH8660-TL-H [ONSEMI]
互补,双功率 MOSFET,-30V,-4.5A,59mΩ;![ECH8660-TL-H](http://pdffile.icpdf.com/pdf2/p00369/img/icpdf/ECH8660-TL-H_2251184_icpdf.jpg)
型号: | ECH8660-TL-H |
厂家: | ![]() |
描述: | 互补,双功率 MOSFET,-30V,-4.5A,59mΩ |
文件: | 总8页 (文件大小:383K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Ordering number : ENA1358B
ECH8660
Power MOSFET
http://onsemi.com
–
–
Ω
Ω
30V, 4.5A, 59m , 30V, 4.5A, 59m , Complementary Dual ECH8
Features
•
The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
high-speed switching , thereby enablimg high-density mounting
•
•
4V drive
Halogen free compliance
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
N-channel
30
P-channel
--30
Unit
V
V
DSS
V
±20
4.5
30
±20
V
GSS
I
--4.5
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
I
PW 10 s, duty cycle 1%
--30
A
≤
μ
≤
DP
P
P
When mounted on ceramic substrate (1200mm2 0.8mm) 1unit
When mounted on ceramic substrate (1200mm2 0.8mm)
1.3
1.5
W
W
°C
°C
×
D
T
×
Channel Temperature
Storage Temperature
Tch
150
--55 to +150
Tstg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: ECH8
7011A-001
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 3,000 pcs./reel
ECH8660-TL-H
Top View
2.9
Packing Type : TL
Marking
0.15
8
5
TF
Lot No.
0 to 0.02
TL
4
1
Electrical Connection
0.65
0.3
8
7
6
5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
1
2
3
4
ECH8
Bottom View
Semiconductor Components Industries, LLC, 2013
July, 2013
42512 TKIM/D2210 TKIM/N1908PE MSIM TC-00001695 No. A1358-1/8
ECH8660
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
max
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
30
(BR)DSS
D
GS
I
V
=30V, V =0V
1
A
A
μ
DSS
DS GS
I
V
=±16V, V =0V
±10
2.6
μ
GSS
GS DS
V
(off)
|
V
=10V, I =1mA
1.2
1
V
GS
yfs
DS D
Forward Transfer Admittance
V
I
=10V, I =2A
D
1.66
45
S
|
DS
R
R
R
(on)1
(on)2
(on)3
=2A, V =10V
GS
59
119
155
m
Ω
Ω
Ω
DS
DS
DS
D
Static Drain-to-Source On-State Resistance
I
D
=1A, V =4.5V
GS
85
m
m
I
D
=1A, V =4V
GS
110
240
45
Input Capacitance
Ciss
V
=10V, f=1MHz
=10V, f=1MHz
=10V, f=1MHz
pF
DS
Output Capacitance
Coss
Crss
V
pF
pF
ns
DS
Reverse Transfer Capacitance
Turn-ON Delay Time
V
30
DS
t
t
t
t
(on)
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
6.2
11
d
r
Rise Time
ns
Turn-OFF Delay Time
Fall Time
(off)
17
ns
d
f
7.5
4.4
1.1
0.64
0.84
ns
Total Gate Charge
Qg
V
=10V, V =10V, I =4.5A
GS
nC
nC
nC
V
DS
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Qgs
Qgd
V
=10V, V =10V, I =4.5A
GS
DS
D
V
=10V, V =10V, I =4.5A
GS
DS
D
V
I =4.5A, V =0V
GS
1.2
SD
S
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=--1mA, V =0V
--30
V
(BR)DSS
D GS
I
V
=--30V, V =0V
--1
±10
A
A
μ
DSS
DS
GS
I
V
=±16V, V =0V
GS DS
μ
GSS
V
(off)
|
V
=--10V, I =--1mA
DS D
--1.2
2.5
--2.3
V
GS
yfs
Forward Transfer Admittance
V
I
=--10V, I =--2A
D
4.2
45
S
|
DS
R
R
R
(on)1
(on)2
(on)3
=--2A, V =--10V
GS
59
100
115
m
Ω
Ω
Ω
DS
DS
DS
D
Static Drain-to-Source On-State Resistance
I
D
=--1A, V =--4.5V
GS
71
m
m
I
D
=--1A, V =--4V
GS
82
Input Capacitance
Ciss
V
=--10V, f=1MHz
=--10V, f=1MHz
=--10V, f=1MHz
430
105
75
pF
DS
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
DS
pF
pF
ns
V
DS
t
t
t
t
(on)
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
7.5
26
d
r
ns
Turn-OFF Delay Time
Fall Time
(off)
45
ns
d
f
35
ns
Total Gate Charge
Qg
V
=--10V, V =--10V, I =--4.5A
GS
10
nC
nC
nC
V
DS
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
DS
=--10V, V =--10V, I =--4.5A
GS
2.0
2.5
--0.85
D
V
DS
=--10V, V =--10V, I =--4.5A
GS
GS
D
V
SD
I =--4.5A, V =0V
S
--1.2
Switching Time Test Circuit
[N-channel]
[P-channel]
V =15V
DD
V = --15V
DD
V
IN
V
IN
10V
0V
0V
--10V
I
=2A
I = --2A
D
R =7.5Ω
L
D
V
IN
V
IN
R =7.5Ω
L
D
V
OUT
D
V
OUT
PW=10μs
D.C.≤1%
PW=10μs
D.C.≤1%
G
G
ECH8660
ECH8660
P. G
P. G
50Ω
50Ω
S
S
No. A1358-2/8
ECH8660
Ordering Information
Device
Package
ECH8
Shipping
memo
ECH8660-TL-H
3,000pcs./reel
Pb-Free and Halogen Free
I
-- V
DS
[Nch]
I
-- V
[Nch]
=10V
D
D GS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
6
5
4
3
2
1
V
DS
V
=3.0V
GS
0.5
0
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1
2
3
4
5
Drain-to-Source Voltage, V
-- V
IT14210
Gate-to-Source Voltage, V
GS
-- V
IT14211
DS
R
(on) -- V
GS
[Nch]
R
(on) -- Ta
[Nch]
DS
DS
240
200
160
120
80
200
160
120
80
Ta=25°C
I =1A
D
2A
40
0
40
0
0
2
4
6
8
10
12
14
16
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
-- V
IT16223
Ambient Temperature, Ta -- °C
IT14213
GS
| yfs | -- I
[Nch]
=10V
I
-- V
[Nch]
D
S SD
7
5
5
V
V
=0V
DS
GS
3
2
3
2
1.0
7
5
1.0
7
3
2
5
0.1
7
5
3
2
3
2
0.1
0.01
0.01
0.2
0.4
0.6
0.8
1.0
1.2
IT14215
2
3
5
7
2
3
5
7
1.0
2
3
5
7
0.1
Drain Current, I -- A
Diode Forward Voltage, V -- V
SD
IT14214
D
No. A1358-3/8
ECH8660
SW Time -- I
[Nch]
Ciss, Coss, Crss -- V
[Nch]
D
DS
5
7
5
V
V
=15V
=10V
f=1MHz
DD
GS
3
2
3
2
100
10
7
5
t (on)
d
7
5
t
r
3
2
3
2
1.0
0.1
10
0
5
10
15
20
25
30
IT14217
2
3
5
7
2
3
5
7
1.0
10
Drain Current, I -- A
IT14216
Drain-to-Source Voltage, V
-- V
D
DS
V
-- Qg
[Nch]
A S O
[Nch]
PW≤10μs
GS
7
5
10
9
V
I
=10V
=4.5A
I
=30A
DS
D
DP
3
2
8
10
7
5
I =4.5A
1ms
D
7
3
2
6
1.0
7
5
5
Operation in this
4
3
2
area is limited by R (on).
DS
3
0.1
7
5
2
Ta=25°C
Single pulse
3
2
1
0
When mounted on ceramic substrate
(1200mm2×0.8mm)
0.01
0.1
0
0
0
1
2
3
4
5
IT14218
[Pch]
2
3
5
7
2
3
5
7
2
3
5
1.0
10
Total Gate Charge, Qg -- nC
Drain-to-Source Voltage, V
-- V
IT14195
DS
I
-- V
DS
I
-- V
[Pch]
D
D GS
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--6
V
= --10V
DS
--5
--4
--3
--2
--1
0
--0.5
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
Drain-to-Source Voltage, V
DS
-- V
IT14186
Gate-to-Source Voltage, V
GS
-- V
IT14187
R
(on) -- V
[Pch]
R
(on) -- Ta
[Pch]
DS
GS
DS
180
160
140
120
100
80
160
140
120
100
80
Ta=25°C
I = --1A
D
--2A
60
60
40
40
20
0
20
0
--2
--4
--6
--8
--10
--12
--14
--16
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
GS
-- V
IT16224
Ambient Temperature, Ta -- °C
IT14189
No. A1358-4/8
ECH8660
| yfs | -- I
[Pch]
I
-- V
[Pch]
=0V
D
S SD
--10
7
5
2
V
= --10V
V
GS
DS
10
7
5
3
2
3
2
--1.0
1.0
7
5
7
5
3
2
3
2
--0.1
0.1
7
5
7
5
3
2
3
2
0.01
7
--0.01
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
--10
IT14190
--0.001
--0.01
--0.1
--1.0
Drain Current, I -- A
D
Diode Forward Voltage, V -- V
SD
IT14191
SW Time -- I
[Pch]
[Pch]
Ciss, Coss, Crss -- V
D
DS
1000
100
V
V
= --15V
= --10V
f=1MHz
DD
GS
7
5
7
5
3
2
3
2
100
10
t (on)
d
7
5
7
5
3
3
0
--5
--10
--15
--20
--25
--30
2
3
5
7
2
3
5
7
--0.1
--1.0
--10
Drain Current, I -- A
IT14193
IT14192
Drain-to-Source Voltage, V
-- V
D
DS
V
-- Qg
[Pch]
A S O
[Pch]
GS
7
5
--10
V
= --10V
I
= --30A
DP
PW≤10μs
DS
= --4.5A
3
2
--9
--8
--7
--6
--5
--4
--3
--2
I
D
--10
7
5
1ms
I = --4.5A
D
3
2
--1.0
7
5
Operation in this
3
2
area is limited by R (on).
DS
--0.1
7
5
Ta=25°C
Single pulse
3
2
--1
0
When mounted on ceramic substrate
(1200mm2×0.8mm)
--0.01
--0.1
0
1
2
3
4
5
6
7
8
9
10
11
2
3
5
7
2
3
5
7
2
3
5
--1.0
--10
Total Gate Charge, Qg -- nC
IT14194
Drain-to-Source Voltage, V
DS
-- V
IT14196
P
-- Ta
[Nch/Pch]
D
1.8
When mounted on ceramic substrate
(1200mm2×0.8mm)
1.6
1.5
1.4
1.3
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
IT14197
Ambient Temperature, Ta -- °C
No. A1358-5/8
ECH8660
Embossed Taping Specification
ECH8660-TL-H
No. A1358-6/8
ECH8660
Outline Drawing
Land Pattern Example
ECH8660-TL-H
Mass (g) Unit
Unit: mm
0.02
mm
* For reference
0.4
0.65
No. A1358-7/8
ECH8660
Note on usage : Since the ECH8660 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
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as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
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PS No. A1358-8/8
相关型号:
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ECH8662-TL-H
N-Channel Power MOSFET, 40V, 6.5A, 30mΩ, Dual ECH8, SOT-28FL / ECH8, 3000-REEL
ONSEMI
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