ECH8663R-TL-H [ONSEMI]
Dual N-Channel Power MOSFET, 30V, 8A, 20.5mΩ;型号: | ECH8663R-TL-H |
厂家: | ONSEMI |
描述: | Dual N-Channel Power MOSFET, 30V, 8A, 20.5mΩ |
文件: | 总7页 (文件大小:298K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Ordering number : ENA1184A
ECH8663R
N-Channel Power MOSFET
http://onsemi.com
Ω
30V, 8A, 20.5m , Dual ECH8
Features
•
•
•
•
•
•
•
Low ON-resistance
2.5V drive
Common-drain type
Protection diode in
Built-in gate protection resistor
Best suited for LiB charging and discharging switch
Halogen free compliance
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
30
±12
8
DSS
V
V
GSS
I
A
D
Drain Current (Pulse)
I
PW 10 s, duty cycle 1%
When mounted on ceramic substrate (900mm2 0.8mm) 1unit
When mounted on ceramic substrate (900mm2 0.8mm)
60
A
≤
μ
≤
DP
Allowable Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
P
P
1.4
1.5
150
W
W
°C
°C
×
D
T
×
Tch
Tstg
--55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: ECH8
7011A-003
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 3,000 pcs./reel
ECH8663R-TL-H
Top View
2.9
Packing Type : TL
Marking
0.15
8
5
TJ
0 to 0.02
TL
LOT No.
4
1
Electrical Connection
0.65
0.3
8
7
6
5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
1
2
3
4
8 : Drain
ECH8
Bottom View
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/72308PE TIIM TC-00001535 No. A1184-1/7
ECH8663R
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
30
(BR)DSS
D GS
I
V
V
=30V, V =0V
1
A
A
μ
DSS
DS
GS
I
=±8V, V =0V
DS
±10
1.3
μ
GSS
GS
V
(off)
|
V
=10V, I =1mA
0.5
5
V
GS
yfs
DS D
Forward Transfer Admittance
V
I
=10V, I =4A
D
8.5
S
|
DS
R
R
R
R
(on)1
(on)2
(on)3
(on)4
=4A, V =4.5V
GS
10.5
11
15.5
16
20.5
21
m
Ω
Ω
Ω
Ω
DS
DS
DS
DS
D
I
D
=4A, V =4.0V
GS
m
m
m
Static Drain-to-Source On-State Resistance
I
D
=2A, V =3.1V
GS
12
17.5
20
23
I
D
=2A, V =2.5V
GS
12
28
Turn-ON Delay Time
Rise Time
t
t
t
t
(on)
320
850
4200
1800
12.3
2.4
ns
d
r
ns
ns
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
d
f
ns
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qg
nC
nC
nC
V
Qgs
Qgd
V
DS
=10V, V =4.5V, I =8A
GS
D
2.8
V
I =8A, V =0V
S GS
0.75
1.2
SD
Switching Time Test Circuit
V
=15V
V
DD
IN
4.5V
0V
I
=4A
D
V
IN
R =3.75Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
R
g
G
ECH8663R
P.G
50Ω
S
R =1kΩ
g
Ordering Information
Device
Package
ECH8
Shipping
3,000pcs./reel
memo
ECH8663R-TL-H
Pb Free and Halogen Free
No. A1184-2/7
ECH8663R
I
D
-- V
I -- V
D GS
DS
10
9
10
9
V
=10V
DS
8
8
7
7
6
6
5
5
4
4
3
3
2
2
1
0
1
0
0
0.5
1.0
1.5
2.0
2.5
IT13612
0
0.1
0.2
0.3
0.4
0.5
Drain-to-Source Voltage, V
-- V
Gate-to-Source Voltage, V -- V
GS
IT13806
DS
R
(on) -- V
R
(on) -- Ta
DS
GS
DS
100
90
80
70
60
50
40
30
20
40
35
30
25
20
15
Ta=25°C
I =1.5A
D
3.0A
10
5
10
0
0
2
4
6
8
10
IT13613
--60 --40 --20
0
20
40
60
80 100 120 140 160
IT13614
Gate-to-Source Voltage, V
GS
-- V
Ambient Temperature, Ta -- °C
| yfs | -- I
I
S
-- V
SD
D
10
7
5
10
V
=0V
V
=10V
GS
DS
3
2
7
5
1.0
7
5
3
2
0.1
3
2
7
5
3
2
0.01
7
5
3
2
1.0
0.1
0.001
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
2
3
5
7
2
3
5
7
1.0
10
Drain Current, I -- A
IT13615
Diode Forward Voltage, V
-- V
IT13616
D
SD
SW Time -- I
V
-- Qg
GS
D
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
10000
V
V
=10V
=4.5V
V
I
=10V
=8A
DD
GS
DS
D
7
5
3
2
t
f
1000
7
5
t (on)
d
0.5
0
3
2
0
1
2
3
4
5
6
7
8
9
10 11 12 13
2
3
5
7
2
3
5
7
2
3
5 7
0.01
0.1
1.0
10
Drain Current, I -- A
Total Gate Charge, Qg -- nC
IT13680
IT13681
D
No. A1184-3/7
ECH8663R
A S O
P
-- Ta
D
2
1.6
1.5
1.4
When mounted on ceramic substrate
100
7
5
3
2
(900mm2×0.8mm)
I
=60A
DP
PW≤10μs
100
μ
s
1.2
1.0
0.8
0.6
0.4
I =8A
D
10
7
5
3
2
1.0
7
5
3
2
Operation in this
area is limited by R (on).
DS
0.1
7
5
3
2
Ta=25°C
Single pulse
0.2
0
When mounted on ceramic substrate
(900mm2×0.8mm) 1unit
0.01
0.01
2
3
5
7
2
3
5
7
2
3
5
7
10
2
3
5
0
20
40
60
80
100
120
140
160
0.1
1.0
Drain-to-Source Voltage, V
DS
-- V
Ambient Temperature, Ta -- °C
IT13682
IT13683
No. A1184-4/7
ECH8663R
Embossed Taping Specification
ECH8663R-TL-H
No. A1184-5/7
ECH8663R
Outline Drawing
Land Pattern Example
ECH8663R-TL-H
Mass (g) Unit
Unit: mm
0.02
mm
* For reference
0.4
0.65
No. A1184-6/7
ECH8663R
Note on usage : Since the ECH8663R is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1184-7/7
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