EFC2K101NUZTDG [ONSEMI]

双 N 沟道功率 MOSFET 12V,15A,6.2mΩ;
EFC2K101NUZTDG
型号: EFC2K101NUZTDG
厂家: ONSEMI    ONSEMI
描述:

双 N 沟道功率 MOSFET 12V,15A,6.2mΩ

文件: 总6页 (文件大小:192K)
中文:  中文翻译
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EFC2K101NUZ  
Power MOSFET  
for 1‐Cell Lithium‐ion  
Battery Protection  
12 V, 6.2 mW, 15 A, Dual N-Channel  
www.onsemi.com  
This Power MOSFET features a low on-state resistance. This device  
is suitable for applications such as power switches of portable  
machines. Best suited for 1-cell lithium-ion battery applications.  
V
SSS  
R
MAX  
I MAX  
S
SS(ON)  
12 V  
6.2 mW @ 4.5 V  
6.6 mW @ 3.8 V  
8.0 mW @ 3.1 V  
10.0 mW @ 2.5 V  
15 A  
Features  
2.5 V Drive  
Common-Drain Type  
ESD Diode-Protected Gate  
This device is Pb-Free, Halogen Free and RoHS Compliance  
Applications  
ELECTRICAL CONNECTION  
1-Cell Lithium-ion Battery Charging and Discharging Switch  
4, 6  
Specifications  
5
2
ABSOLUTE MAXIMUM RATINGS (T = 25°C)  
A
Parameter  
Source to Source Voltage  
Gate to Source Voltage  
Source Current (DC)  
Symbol  
Value  
12  
Unit  
V
V
SSS  
GSS  
1: Source1  
2: Gate1  
3: Source1  
4: Source2  
5: Gate2  
V
8
V
I
S
15  
A
Source Current (Pulse)  
PW 10 ms, duty cycle 1%  
I
SP  
60  
A
6: Source2  
1, 3  
N-Channel  
Total Dissipation (Note 1)  
Junction Temperature  
P
1.4  
W
T
T
150  
°C  
j
PIN ASSIGNMENT  
Storage Temperature  
T
55 to +150  
°C  
stg  
1
2
5
3
6
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
WLCSP6  
(1.79 x 1.18 x 0.13)  
CASE 567VU  
4
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Value  
Unit  
MARKING DIAGRAM  
Junction to Ambient (Note 1)  
R
89.3  
°C/W  
θ
JA  
NV  
AYWZZ  
2
1. Surface mounted on ceramic substrate (5000 mm × 0.8 mm).  
NV  
A
Y
= Specific Device Code  
= Assembly Location  
= Year  
W
ZZ  
= Work Week  
= Assembly Lot  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
October, 2018 Rev. 0  
EFC2K101NUZ/D  
 
EFC2K101NUZ  
ELECTRICAL CHARACTERISTICS (T = 25°C)  
A
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
V
V
Source to Source Breakdown Voltage I = 1 mA, V = 0 V  
12  
(BR)SSS  
S
GS  
I
Zero-Gate Voltage Source Current  
Gate to Source Leakage Current  
V
= 10 V, V = 0 V  
1
1
mA  
mA  
V
SSS  
SS  
GS  
SS  
GS  
I
V
V
= 8 V, V = 0 V  
SS  
GSS  
V
R
(th) Gate Threshold Voltage  
= 6 V, I = 1 mA  
0.4  
3.2  
3.5  
3.9  
4.5  
1.3  
6.2  
6.6  
8.0  
10.0  
GS  
S
(on) Static Source to Source On-State  
Resistance  
I = 5 A, V = 4.5 V  
S
4.7  
5.0  
5.7  
6.6  
5
mW  
mW  
mW  
mW  
ms  
SS  
GS  
I = 5 A, V = 3.8 V  
S
GS  
I = 5 A, V = 3.1 V  
S
GS  
I = 5 A, V = 2.5 V  
S
GS  
t (on)  
d
Turn-ON Delay Time  
Rise Time  
V
= 5 V, V = 3.8 V, I = 5 A  
SS GS S  
Rg = 10 kW Switching Test Circuit  
t
r
19  
ms  
t (off)  
Turn-OFF Delay Time  
Fall Time  
53  
ms  
d
t
f
40  
ms  
Qg  
Total Gate Charge  
Forward Source to Source Voltage  
V
= 5 V, V = 3.8 V, I = 5 A  
16  
nC  
V
SS  
GS  
S
V
I = 3 A, V = 0 V  
S
0.75  
1.2  
F(SS)  
GS  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
t (on), t , t (off), t  
f
d
r
d
S2  
R
L
G2  
G1  
When FET1 is measured,  
Gate and Source of FET2  
are short-circuited.  
V
R
g
V
SS  
S1  
Figure 1. Switching Test Circuit  
ORDERING INFORMATION  
Device  
Marking  
Package  
Shipping (Qty / Packing)  
EFC2K101NUZTDG  
NV  
WLCSP6, 1.79 x 1.18 x 0.13  
(Pb-Free / Halogen Free)  
5,000 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
www.onsemi.com  
2
EFC2K101NUZ  
TYPICAL CHARACTERISTICS  
6
5
4
10  
4.5 V  
9
V
SS  
= 6 V  
T = 25°C  
A
8
Single Pulse  
7
V
= 2.5 V  
GS  
T = 75°C  
A
6
5
4
3
3
2
25°C  
3.1 V  
3.8 V  
25°C  
2
1
0
1
0
0
0.005 0.01 0.015 0.02 0.025 0.03  
0.035 0.04  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
Source-to-Source Voltage, V (V)  
Gate-to-Source Voltage, V (V)  
GS  
SS  
Figure 2. On-Region Characteristics  
Figure 3. Transfer Characteristics  
7.0  
10.0  
9.0  
8.0  
7.0  
6.0  
5.0  
4.0  
3.0  
V
I
= 2.5 V,  
= 5 A  
I
= 5 A  
GS  
S
Single Pulse  
6.5  
6.0  
5.5  
5.0  
4.5  
Single Pulse  
S
V
GS  
= 3.1 V,  
T = 75°C  
A
I
S
= 5 A  
25°C  
V
GS  
= 4.5 V,  
4.0  
3.5  
3.0  
25°C  
I
S
= 5 A  
V
GS  
= 3.8 V,  
I
S
= 5 A  
1
2
3
4
5
6
7
8
60 40 20  
0
20  
40 60  
80 100 120 140 160  
Gate-to-Source Voltage, V (V)  
Ambient Temperature, T (5C)  
GS  
A
Figure 4. On-Resistance vs. Gate-to-Source  
Voltage  
Figure 5. On-Resistance vs. Temperature  
10  
V
= 0 V  
GS  
V
V
= 5 V,  
= 3.8 V  
= 5 A  
100  
10  
1
SS  
td(off)  
Single Pulse  
GS  
I
S
1
T = 75°C  
A
25°C  
tf  
tr  
0.1  
td(on)  
25°C  
0.1  
0.01  
1
10  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
Gate Resistance, R (kW)  
Forward Source-to-Source Voltage, V  
(V)  
g
F(S-S)  
Figure 6. Forward Source-to-Source Voltage  
vs. Current  
Figure 7. Switching Time vs. Gate Resistance  
www.onsemi.com  
3
EFC2K101NUZ  
TYPICAL CHARACTERISTICS  
4.5  
4.0  
I
= 60 A (PW 10 ms)  
SP  
100  
V
= 5 V  
= 5 A  
SS  
I
S
10 ms  
I
S
= 15 A  
3.5  
3.0  
10  
1
100 ms  
DC Operation  
2.5  
2.0  
1 ms  
Operation in this area  
is limited by R  
10 ms  
SS(on)  
100 ms  
1.5  
1.0  
T
= 25°C  
A
0.1  
0.01  
Single Pulse  
When mounted on ceramic substrate  
(5000 mm × 0.8 mm)  
0.5  
0.0  
2
0
5
10  
15  
20  
0.01  
0.1  
1
10  
Total Gate Charge, Q (nC)  
Source-to-Source Voltage, V (V)  
SS  
g
Figure 8. Gate-to-Source Voltage vs. Total Charge  
Figure 9. Safe Operating Area  
1.6  
Surface mounted on  
1.4  
ceramic substrate  
2
(5000 mm × 0.8 mm)  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
0
20  
40  
60  
80  
100  
120  
140  
160  
Ambient Temperature, T (5C)  
A
Figure 10. Total Dissipation vs. Temperature  
100  
Duty Cycle 50%  
20%  
10%  
10  
5%  
2%  
1%  
1
Single Pulse  
Surface mounted on ceramic substrate  
2
(5000 mm × 0.8 mm)  
0.1  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Time, P (s)  
T
Figure 11. Thermal Response  
Note on Usage: Since the EFC2K101NUZ is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.  
www.onsemi.com  
4
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
WLCSP6 1.79x1.18x0.13  
CASE 567VU  
ISSUE O  
DATE 09 FEB 2018  
A
Y
W
= Assembly Location  
= Year  
= Work Week  
GENERIC  
MARKING DIAGRAM*  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
PbFree indicator, “G” or microdot “ G”,  
may or may not be present. Some products  
may not follow the Generic Marking.  
XXXXXG  
AYWZZG  
ZZ = Assembly Lot  
G
= PbFree Package  
(Note: Microdot may be in either location)  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON83699G  
WLCSP6 1.79x1.18x0.13  
PAGE 1 OF 1  
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