EFC4C012NLTDG [ONSEMI]
用于 3 节锂电子电池保护的双 N 沟道功率 MOSFET，30 V，19A，6.5mΩ;
| 型号： | EFC4C012NLTDG |
| 厂家： | 
ONSEMI |
| 描述： | 用于 3 节锂电子电池保护的双 N 沟道功率 MOSFET，30 V，19A，6.5mΩ 电子 电池 |
| 文件： | 总7页 (文件大小：211K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EFC4C012NL
Power MOSFET for 3-Cells
Lithium-ion Battery
Protection 30 V, 6.5 mW,
19 A, Dual N-Channel,
WLCSP6
www.onsemi.com
V
R
Max
I Max
S
This N−Channel Power MOSFET is produced using
ON Semiconductor’s trench technology, which is specifically
designed to minimize gate charge and ultra low on resistance.
This device is suitable for applications of Notebook PC.
SSS
SS(on)
6.5 mW @ 10 V
8.4 mW @ 8 V
13 mW @ 4.5 V
30 V
19 A
Features
ELECTRICAL CONNECTION
• Ultra Low On−Resistance
N−CHANNEL
• Low Gate Charge
5
6
• Common−Drain type
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
3,4
• 3−Cells Lithium−ion Battery Charging and Discharging Switch
1. Gate 1
2. Source 1
3. Drain
SPECIFICATIONS
4. Drain
5. Source 2
6. Gate 2
ABSOLUTE MAXIMUM RATINGS at T = 25_C(Note 1)
A
2
Parameter
Source to Source Voltage
Gate to Source Voltage
Source Current (DC)
Symbol
Value
Unit
V
1
V
30
SSS
GSS
PIN ASSIGNMENT
V
20
V
I
S
19
A
Source Current (Pulse)
I
SP
76
A
PW ≤ 10 μs, duty cycle ≤ 1%
(Bottom View)
Total Dissipation (Note 2)
P
T
2.5
W
Junction Temperature
Storage Temperature
Tj
Tstg
150
_C
_C
MARKING
DIAGRAM
−55 to +150
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
NP
G
AYWZZ
WLCSP6
CASE 567SZ
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
Unit
Junction to Ambient (Note 1)
R
50
_C/W
θ
JA
A
Y
W
= Assembly Location
= Year
= Work Week
2
1. Surface mounted on ceramic substrate(5000 mm × 0.8 mm).
ZZ = Assembly Lot
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
November, 2017 − Rev. 0
EFC4C012NL/D
EFC4C012NL
ELECTRICAL CHARACTERISTICS at T = 25_C (Note 1)
A
Value
Typ
Min
Max
Parameter
Symbol
Conditions
I = 1 mA, V = 0 V
Unit
V
Source to Source Breakdown Voltage
Zero−Gate Voltage Source Current
Gate to Source Leakage Current
Gate Threshold Voltage
V(
)
30
BR SSS
S
GS
I
V
= 24 V, V = 0 V
1
μA
nA
V
SSS
GSS
SS
GS
SS
GS
GS
GS
SS
GS
I
V
V
V
V
V
V
= 20 V, V = 0 V
200
2.2
6.5
8.4
13
SS
V
R
(th)
= 10 V, I = 1 mA
1.3
3.7
4.0
5.5
GS
S
Static Source to Source On−State Re-
(on)
= 10 V, I = 5 A
5.0
5.3
7.3
2.7
2.0
26
mW
mW
mW
μs
SS
S
sistance
= 8 V, I = 5 A
S
= 4.5 V, I = 5 A
S
Turn−ON Delay Time
Rise Time
t (on)
d
= 15 V, V = 10 V
GS
I = 5 A, Rg = 5 kW
S
t
r
μs
Switching Test Circuit
Turn−OFF Delay Time
Fall Time
t (off)
μs
d
t
f
5.7
18
μs
Total Gate Charge
Qg
V
S
= 15 V, V = 4.5 V
nC
SS
GS
I = 5 A
Forward Source to Source Voltage
V
F(S−S)
I = 5 A, V = 0 V, Power Time = 1ms
0.75
1.2
V
S
GS
2. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Figure 1. Switching Test Circuit
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2
EFC4C012NL
TYPICAL CHARACTERISTICS
20
18
16
14
12
10
8
20
T = 25°C
V
= 10 V
A
SS
18
16
14
12
10
8
12 V
Single Pulse
Single Pulse
8 V
10 V
T = 75°C
A
V
GS
= 4.5 V
T = 25°C
A
6
6
4
4
T = −25°C
A
2
2
0
0
0
0
0.02
0.04 0.06 0.08 0.1 0.12 0.14
1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
V
SS
, SOURCE−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. On−Region Characteristics
Figure 3. Transfer Characteristics
12
11
10
9
12
11
10
9
I
= 5 V
S
I
= 5 V
S
Single Pulse
Single Pulse
V
GS
= 4.5 V
8
8
7
7
V
GS
= 8 V
T = 75°C
A
6
6
T = 25°C
A
5
5
V
GS
= 10 V
4
4
T = −25°C
A
3
3
2
3
2
0
5
7
9
11
13
15
−60 −40 −20
20 40 60 80 100120 140150
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T , AMBIENT TEMPERATURE (°C)
A
Figure 4. On−Resistance vs. Gate−to−Source
Figure 5. On−Resistance vs. Temperature
Voltage
20
1000
100
V
= 15 V
= 10 V
= 5 A
V
= 0 V
SS
GS
V
GS
Single Pulse
10
I
S
T = 75°C
A
t
d(off)
10
1
t
f
1
T = 25°C
A
td(on)
T = −25°C
A
t
r
0.1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
1.0
20
R , GATE RESISTANCE (kW)
G
V , FORWARD SOURCE−TO−SOURCE VOLTAGE (V)
F(S−S)
Figure 6. Forward Source−to−Source Voltage
Figure 7. Switching Time vs. Gate Resistance
vs. Current
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3
EFC4C012NL
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
100
V
= 15 V
= 5 V
SS
I
= 76 A
SP
10 ms
I
S
1 ms
(PW ≤ 10 ms)
100 ms
10 ms
I
= 19 A
S
10
1
100 ms
DC Operation
Operation in this area
is limited by R
SS(on)
T = 25°C
Single Pulse
Surface mounted on ceramic substrate
(5000 mm x 0.8 mm)
A
2
0.1
0
2
4
6
8
10
12
14 16
18 20
0.01
0.1
1
10
50
Q , TOTAL GATE CHARGE (nC)
G
V
SS
, SOURCE−TO−SOURCE VOLTAGE (V
Figure 8. Gate−to−Source Voltage vs. Total
Figure 9. Safe Operating Area
Charge
3.0
Surface mounted on ceramic substrate
(5000 mm x 0.8 mm)
2
2.5
2.0
1.5
1.0
0.5
0
0
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
A
Figure 10. Total Dissipation vs. Temperature
100
10
1.0
0.1
1E−0.5
0.0001
0.001
0.01
0.1
1.0
10
P , PULSE TIME (sec)
T
Figure 11. Thermal Response
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4
EFC4C012NL
ORDERING INFORMATION
Device
†
Marking
Package
Shipping (Qty / Packing)
EFC4C012NLTDG
NP
WLCSP6 3.5x1.9x0.21
(Pb−Free / Halogen Free)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WLCSP6 3.5x1.9x0.21
CASE 567SZ
ISSUE A
DATE 24 APR 2017
SCALE 4:1
E
A
NOTES:
B
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
PIN A1
REFERENCE
2. CONTROLLING DIMENSION: MILLIMETERS.
MILLIMETERS
DIM
A
b
b1
b2
D
MIN
0.19
0.22
0.32
1.97
3.47
1.87
NOM
0.21
0.25
0.35
2.00
3.50
1.90
MAX
0.23
0.28
0.38
2.03
3.53
1.93
D
E
e
e1
0.95 BSC
1.54 BSC
GENERIC
MARKING DIAGRAM*
XXXXX
G
TOP VIEW
SIDE VIEW
AYWZZ
A
0.03
0.03
C
A
Y
W
= Assembly Location
= Year
= Work Week
C
SEATING
PLANE
C
ZZ = Assembly Lot
G
= Pb−Free Package
2X b1
C A B
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
M
0.05
4
3
e1
e1
RECOMMENDED
SOLDERING FOOTPRINT*
0.35
5
6
2
1
1
6
2X b2
C A B
1.54
M
0.05
4X
b
2
3
5
4
e
2.00
M
0.05
C A B
BOTTOM VIEW
1.54
4X
0.25
PACKAGE
OUTLINE
0.95
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON16974G
WLCSP6 3.5x1.9x0.21
PAGE 1 OF 1
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