EGF1D [ONSEMI]
1.0A快速恢复整流器;型号: | EGF1D |
厂家: | ONSEMI |
描述: | 1.0A快速恢复整流器 光电二极管 |
文件: | 总5页 (文件大小:111K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Fast Rectifiers
(Glass Passivated)
COLOR BAND DENOTES CATHODE
EGF1A, EGF1B, EGF1C,
EGF1D
SMA (DO−214AC)
CASE 403AE
Features
MARKING DIAGRAM
• Low Forward Voltage Drop
• Low Profile Package
$Y&Z&3
EGF1x
• Fast Switching for High Efficiency
• These Devices are Pb−Free, Halide Free and are RoHS Compliant
$Y
&Z
&3
= Logo
= Assembly Plant Code
= 3−Digit Date Code
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Value
EGF1x = Specific Device Code (x = A, B, C, D)
1A 1B 1C 1D
Maximum Repetitive Reverse Voltage 50 100 150 200
Symbol
Parameter
Unit
V
V
RRM
I
Average Rectified Forward Current,
1.0
A
F(AV)
ORDERING INFORMATION
@ T = 100°C
L
†
Device
EGF1A
Package
Shipping
I
Non−repetitive Peak Forward Surge
Current
8.3 ms Single Half−Sine−Wave
30
A
FSM
SMA
(Pb−Free,
Halide Free)
7500 / Tape &
Reel
EGF1B
EGF1C
EGF1D
T
Storage Temperature Range
−65 to +175
−65 to +175
°C
°C
stg
T
J
Operating Junction Temperature
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
200
2.0
Unit
V
V
RRM
Maximum Repetitive Reverse Voltage
Power Dissipation
P
D
W
R
Thermal Resistance, Junction to Ambient*
Thermal Resistance, Junction to Lead*
85
_C/W
_C/W
q
JA
R
30
q
JL
*Device mounted on FR−4 PCB 0.013 mm.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Device
1A 1B 1C 1D
Symbol
Parameter
Forward Voltage @ 1.0 A
Reverse Recovery Time
Unit
V
V
F
1.0
50
t
rr
ns
I = 0.5 A, I = 1.0 A, I = 0.25 A
F
R
RR
I
Reverse Current @ Rated V
R
R
T = 25_C
10
100
mA
mA
A
T = 100_C
A
C
Total Capacitance
15
pF
T
V
R
= 4.0 V, f = 1.0 MHz
Product parametric performance is indicated in the Electrical Characteristics for
the listed test conditions, unless otherwise noted. Product performance may not
be indicated by the Electrical Characteristics if operated under different
conditions.
© Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
November, 2022 − Rev. 4
EGF1D/D
EGF1A, EGF1B, EGF1C, EGF1D
TYPICAL CHARACTERISTICS
100
1.6
1.4
1.2
1
T = 25°C
Pulse Width = 300 mS
2% Duty Cycle
A
10
1
0.8
0.6
0.4
0.2
0
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED
ON 0.2 x 0.2”
(5.0 x 5.0 mm)
COPPER PAD AREAS
0.1
0.01
0
25
50
75
100
125
150
175
100
1
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Lead Temperature (°C)
V , Forward Voltage (V)
F
Figure 1. Forward Current Derating Curve
Figure 2. Forward Voltage Characteristics
1000
40
30
20
10
0
T = 100°C
A
100
10
1
T = 25°C
A
0.1
1
2
5
10
20
50
0
20
40
60
80
100
120
140
Number of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Figure 3. Non−Repetitive Surge Current
Figure 4. Reverse Current vs. Reverse Voltage
60
50
40
30
20
10
0
0.1
0.5
2
5
10 20 50 100
500
V , Reverse Voltage (V)
R
Figure 5. Total Capacitance
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2
EGF1A, EGF1B, EGF1C, EGF1D
REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
trr
50 W
50 W
NONINDUCTIVE
NONINDUCTIVE
+0.5 A
(−)
Pulse
DUT
0
Generator
(Note 2)
50 V
(approx)
+
−0.25 A
−
50 W
NONINDUCTIVE
(+)
OSCILLOSCOPE
(Note 1)
NOTES:
−1.0 A
1.0 cm
SET TIME BASE FOR
5/10 ns/cm
1. Rise time = 7.0 ns max; Input impedance = 1.0 MW 22 pF.
2. Rise time = 10 ns max; Source impedance = 50 W.
Figure 6. Test Circuit Diagram
Figure 7. Reverse Recovery Time Characteristic
www.onsemi.com
3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SMA
CASE 403AE
ISSUE O
DATE 31 AUG 2016
5.60
4.80
M
B
B
0.13
B
C
B
A
2.65
2.95
2.50
1.65
1.20
1.75
4.30
4.75
4.00
B
A
LAND PATTERN RECOMMENDATION
TOP VIEW
2.50 MAX
A
2.20
1.90
NOTES:
A. EXCEPT WHERE NOTED, CONFORMS
TO JEDEC DO214 VARIATION AC.
0.30
0.05
B
DOES NOT COMPLY JEDEC STANDARD
VALUE.
0.203
0.050
B
C
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF
BURRS, MOLD FLASH AND TIE BAR
PROTRUSIONS.
E. DIMENSIONS AND TOLERANCE AS
PER ASME Y14.5−2009.
E. LAND PATTERN STD. DIOM5025X231M
2.05
1.95
M
0.13
C
B
A
SIDE VIEW
8 °
0 °
R0.15 4X
GAGE PLANE
0.45
0.41
0.15
1.52
0.75
8 °
0 °
DETAIL A
SCALE 20 : 1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13440G
SMA
PAGE 1 OF 1
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onsemi,
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