EGF1D [ONSEMI]

1.0A快速恢复整流器;
EGF1D
型号: EGF1D
厂家: ONSEMI    ONSEMI
描述:

1.0A快速恢复整流器

光电二极管
文件: 总5页 (文件大小:111K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
www.onsemi.com  
Fast Rectifiers  
(Glass Passivated)  
COLOR BAND DENOTES CATHODE  
EGF1A, EGF1B, EGF1C,  
EGF1D  
SMA (DO−214AC)  
CASE 403AE  
Features  
MARKING DIAGRAM  
Low Forward Voltage Drop  
Low Profile Package  
$Y&Z&3  
EGF1x  
Fast Switching for High Efficiency  
These Devices are Pb−Free, Halide Free and are RoHS Compliant  
$Y  
&Z  
&3  
= Logo  
= Assembly Plant Code  
= 3−Digit Date Code  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Value  
EGF1x = Specific Device Code (x = A, B, C, D)  
1A 1B 1C 1D  
Maximum Repetitive Reverse Voltage 50 100 150 200  
Symbol  
Parameter  
Unit  
V
V
RRM  
I
Average Rectified Forward Current,  
1.0  
A
F(AV)  
ORDERING INFORMATION  
@ T = 100°C  
L
Device  
EGF1A  
Package  
Shipping  
I
Non−repetitive Peak Forward Surge  
Current  
8.3 ms Single Half−Sine−Wave  
30  
A
FSM  
SMA  
(Pb−Free,  
Halide Free)  
7500 / Tape &  
Reel  
EGF1B  
EGF1C  
EGF1D  
T
Storage Temperature Range  
−65 to +175  
−65 to +175  
°C  
°C  
stg  
T
J
Operating Junction Temperature  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
THERMAL CHARACTERISTICS  
Symbol  
Parameter  
Value  
200  
2.0  
Unit  
V
V
RRM  
Maximum Repetitive Reverse Voltage  
Power Dissipation  
P
D
W
R
Thermal Resistance, Junction to Ambient*  
Thermal Resistance, Junction to Lead*  
85  
_C/W  
_C/W  
q
JA  
R
30  
q
JL  
*Device mounted on FR−4 PCB 0.013 mm.  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Device  
1A 1B 1C 1D  
Symbol  
Parameter  
Forward Voltage @ 1.0 A  
Reverse Recovery Time  
Unit  
V
V
F
1.0  
50  
t
rr  
ns  
I = 0.5 A, I = 1.0 A, I = 0.25 A  
F
R
RR  
I
Reverse Current @ Rated V  
R
R
T = 25_C  
10  
100  
mA  
mA  
A
T = 100_C  
A
C
Total Capacitance  
15  
pF  
T
V
R
= 4.0 V, f = 1.0 MHz  
Product parametric performance is indicated in the Electrical Characteristics for  
the listed test conditions, unless otherwise noted. Product performance may not  
be indicated by the Electrical Characteristics if operated under different  
conditions.  
© Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
November, 2022 − Rev. 4  
EGF1D/D  
EGF1A, EGF1B, EGF1C, EGF1D  
TYPICAL CHARACTERISTICS  
100  
1.6  
1.4  
1.2  
1
T = 25°C  
Pulse Width = 300 mS  
2% Duty Cycle  
A
10  
1
0.8  
0.6  
0.4  
0.2  
0
RESISTIVE OR  
INDUCTIVE LOAD  
P.C.B. MOUNTED  
ON 0.2 x 0.2”  
(5.0 x 5.0 mm)  
COPPER PAD AREAS  
0.1  
0.01  
0
25  
50  
75  
100  
125  
150  
175  
100  
1
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
Lead Temperature (°C)  
V , Forward Voltage (V)  
F
Figure 1. Forward Current Derating Curve  
Figure 2. Forward Voltage Characteristics  
1000  
40  
30  
20  
10  
0
T = 100°C  
A
100  
10  
1
T = 25°C  
A
0.1  
1
2
5
10  
20  
50  
0
20  
40  
60  
80  
100  
120  
140  
Number of Cycles at 60 Hz  
Percent of Rated Peak Reverse Voltage (%)  
Figure 3. Non−Repetitive Surge Current  
Figure 4. Reverse Current vs. Reverse Voltage  
60  
50  
40  
30  
20  
10  
0
0.1  
0.5  
2
5
10 20 50 100  
500  
V , Reverse Voltage (V)  
R
Figure 5. Total Capacitance  
www.onsemi.com  
2
EGF1A, EGF1B, EGF1C, EGF1D  
REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM  
trr  
50 W  
50 W  
NONINDUCTIVE  
NONINDUCTIVE  
+0.5 A  
(−)  
Pulse  
DUT  
0
Generator  
(Note 2)  
50 V  
(approx)  
+
−0.25 A  
50 W  
NONINDUCTIVE  
(+)  
OSCILLOSCOPE  
(Note 1)  
NOTES:  
−1.0 A  
1.0 cm  
SET TIME BASE FOR  
5/10 ns/cm  
1. Rise time = 7.0 ns max; Input impedance = 1.0 MW 22 pF.  
2. Rise time = 10 ns max; Source impedance = 50 W.  
Figure 6. Test Circuit Diagram  
Figure 7. Reverse Recovery Time Characteristic  
www.onsemi.com  
3
 
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SMA  
CASE 403AE  
ISSUE O  
DATE 31 AUG 2016  
5.60  
4.80  
M
B
B
0.13  
B
C
B
A
2.65  
2.95  
2.50  
1.65  
1.20  
1.75  
4.30  
4.75  
4.00  
B
A
LAND PATTERN RECOMMENDATION  
TOP VIEW  
2.50 MAX  
A
2.20  
1.90  
NOTES:  
A. EXCEPT WHERE NOTED, CONFORMS  
TO JEDEC DO214 VARIATION AC.  
0.30  
0.05  
B
DOES NOT COMPLY JEDEC STANDARD  
VALUE.  
0.203  
0.050  
B
C
C. ALL DIMENSIONS ARE IN MILLIMETERS.  
D. DIMENSIONS ARE EXCLUSIVE OF  
BURRS, MOLD FLASH AND TIE BAR  
PROTRUSIONS.  
E. DIMENSIONS AND TOLERANCE AS  
PER ASME Y14.52009.  
E. LAND PATTERN STD. DIOM5025X231M  
2.05  
1.95  
M
0.13  
C
B
A
SIDE VIEW  
8 °  
0 °  
R0.15 4X  
GAGE PLANE  
0.45  
0.41  
0.15  
1.52  
0.75  
8 °  
0 °  
DETAIL A  
SCALE 20 : 1  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13440G  
SMA  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. onsemi reserves the right to make changes at any time to any  
products or information herein, without notice. The information herein is provided “asis” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the  
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use  
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products  
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information  
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may  
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license  
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems  
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should  
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
ADDITIONAL INFORMATION  
TECHNICAL PUBLICATIONS:  
Technical Library: www.onsemi.com/design/resources/technicaldocumentation  
onsemi Website: www.onsemi.com  
ONLINE SUPPORT: www.onsemi.com/support  
For additional information, please contact your local Sales Representative at  
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