EMF5XV6T1G [ONSEMI]
互补双极数字晶体管 (BRT);
| 型号： | EMF5XV6T1G |
| 厂家： | 
ONSEMI |
| 描述： | 互补双极数字晶体管 (BRT) 数字晶体管 |
| 文件： | 总6页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EMF5XV6T5
Preferred Devices
Power Management,
Dual Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
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Features
• Simplifies Circuit Design
• Reduces Board Space
(3)
(2)
(1)
• Reduces Component Count
• These are Pb−Free Devices
Q
1
Q
2
MAXIMUM RATINGS
R
2
R
1
Rating
Symbol
Value
Unit
(4)
(5)
(6)
Q (T = 25°C unless otherwise noted, common for Q and Q )
1
A
1
2
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
V
V
50
50
Vdc
Vdc
CBO
CEO
6
I
100
mAdc
C
Electrostatic Discharge
ESD
HBM Class 1
MM Class B
1
Q (T = 25°C)
2
A
SOT−563
CASE 463A
PLASTIC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
V
−12
Vdc
Vdc
Vdc
Adc
CEO
CBO
EBO
V
V
−15
−6.0
Collector Current − Peak
I
−1.0 (Note 1)
−0.5
MARKING DIAGRAM
C
Collector Current − Continuous
Electrostatic Discharge
ESD
HBM Class 3B
MM Class C
UY M G
THERMAL CHARACTERISTICS
G
Characteristic
1
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
P
D
UY = Specific Device Code
T = 25°C
357 (Note 2)
2.9 (Note 2)
mW
mW/°C
A
M
= Date Code
Derate above 25°C
G
= Pb−Free Package
(Note: Microdot may be in either location)
Thermal Resistance,
Junction-to-Ambient
R
q
JA
350 (Note 2)
°C/W
Characteristic
(Both Junctions Heated)
ORDERING INFORMATION
Symbol
Max
Unit
†
Device
Package
Shipping
Total Device Dissipation
P
D
T = 25°C
Derate above 25°C
500 (Note 2)
4.0 (Note 2)
mW
A
EMF5XV6T5
SOT−563
(Pb−Free)
8000/Tape & Reel
mW/°C
Thermal Resistance,
Junction-to-Ambient
R
250 (Note 2)
°C/W
q
JA
EMF5XV6T5G
SOT−563
(Pb−Free)
8000/Tape & Reel
Junction and Storage
Temperature Range
T , T
J stg
−55 to +150
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Single pulse 1.0 ms.
Preferred devices are recommended choices for future use
2. FR−4 @ Minimum Pad.
and best overall value.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
November, 2005 − Rev. 2
EMF5XV6T5/D
EMF5XV6T5
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, common for Q and Q )
A
1
2
Characteristic
Symbol
Min
Typ
Max
Unit
Q1
OFF CHARACTERISTICS
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
(V = 50 V, I = 0)
I
I
−
−
−
−
−
−
−
100
500
0.1
−
nAdc
nAdc
mAdc
Vdc
CB
E
CBO
CEO
(V = 50 V, I = 0)
CE
B
(V = 6.0 V, I = 0)
I
EBO
−
EB
C
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 3)
ON CHARACTERISTICS (Note 3)
DC Current Gain
(I = 10 mA, I = 0)
V
V
50
50
C
E
(BR)CBO
(BR)CEO
(I = 2.0 mA, I = 0)
−
Vdc
C
B
(V = 10 V, I = 5.0 mA)
h
FE
80
−
140
−
−
CE
C
Collector-Emitter Saturation Voltage
(I = 10 mA, I = 0.3 mA)
V
CE(sat)
0.25
0.2
−
Vdc
Vdc
Vdc
k W
C
B
Output Voltage (on)
Output Voltage (off)
Input Resistor
(V = 5.0 V, V = 3.5 V, R = 1.0 kW)
V
−
−
CC
B
L
OL
(V = 5.0 V, V = 0.5 V, R = 1.0 kW)
V
4.9
32.9
0.8
−
CC
B
L
OH
R1
R1/R2
47
1.0
61.1
1.2
Resistor Ratio
Q2
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
(I = −10 mAdc, I = 0)
V
−12
−15
−6.0
−
−
−
−
−
−
−
−
Vdc
Vdc
C
B
(BR)CEO
(BR)CBO
(BR)EBO
(I = −0.1 mAdc, I = 0)
V
V
C
E
(I = −0.1 mAdc, I = 0)
−
Vdc
E
C
(V = −15 Vdc, I = 0)
I
CBO
−0.1
−0.1
mAdc
mAdc
CB
E
Emitter Cutoff Current
(V = −6.0 Vdc)
EB
I
−
EBO
ON CHARACTERISTICS
DC Current Gain (Note 4)
(I = −10 mA, V = −2.0 V)
h
FE
270
−
−
−
680
−250
−0.90
−0.875
−
C
CE
Collector−Emitter Saturation Voltage (Note 4)
Base−Emitter Saturation Voltage (Note 4)
Base−Emitter Turn−on Voltage (Note 4)
Input Capacitance
(I = −200 mA, I = −10 mA)
V
mV
V
C
B
CE(sat)
BE(sat)
(I = −150 mA, I = −20 mA)
V
−
−0.81
−0.81
52
C
B
(I = −150 mA, V = −3.0 V)
V
BE(on)
−
V
C
CE
(V = 0 V, f = 1.0 MHz)
EB
C
−
pF
pF
ns
ns
ibo
obo
on
Output Capacitance
(V = 0 V, f = 1.0 MHz)
CB
C
t
−
30
−
Turn−On Time
Turn−Off Time
(I = −50 mA, I = −500 mA, R = 3.0 W)
−
50
−
BI
C
L
(I = I = −50 mA, I = −500 mA, R = 3.0 W)
t
−
80
−
B1
B2
C
L
off
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
300
250
200
150
100
R
q
JA
= 833°C/W
50
0
−50
0
50
100
150
T , AMBIENT TEMPERATURE (°C)
A
Figure 1. Derating Curve
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2
EMF5XV6T5
TYPICAL ELECTRICAL CHARACTERISTICS FOR Q1
10
1
1000
V
= 10 V
CE
I /I = 10
C B
T ꢀ=ꢀ75°C
A
25°C
−25°C
25°C
75°C
100
T ꢀ=ꢀ−25°C
A
0.1
0.01
10
0
20
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
1
100
10
1
25°C
f = 1 MHz
= 0 V
75°C
I
E
T ꢀ=ꢀ−25°C
A
0.8
T
= 25°C
A
0.6
0.4
0.1
0.01
0.2
0
V
= 5 V
O
0.001
0
10
20
30
40
50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
100
V
= 0.2 V
O
T ꢀ=ꢀ−25°C
A
25°C
75°C
10
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 6. Input Voltage versus Output Current
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3
EMF5XV6T5
TYPICAL ELECTRICAL CHARACTERISTICS FOR Q2
1
0.1
1
I /I = 100
C
B
25°C
I /I = 200
C
B
−55°C
100
50
0.1
0.01
0.001
10
T = 125°C
A
T = 25°C
A
0.01
0.001
0.001
0.01
0.1
1
0.01
0.1
1
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 7. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 8. Collector Emitter Saturation Voltage
vs. Collector Current
1
600
500
400
300
200
100
0
I /I = 50
C
B
V
= 1.0 V
CE
25°C
125°C
25°C
0.1
−55°C
T = 125°C
A
T = −55°C
A
0.01
0.001
0.001
0.01
0.1
1
0.01
0.1
1
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 9. DC Current Gain
Figure 10. Collector Emitter Saturation Voltage
vs. Collector Current
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1.2
1
T = 25°C
A
−55°C
25°C
I
= 1.0 A
C
0.8
T = 125°C
0.6
0.4
0.2
0
A
500 mA
50 mA
250 mA
100 mA
10 mA
5.0 mA
0.00001
0.0001
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I , BASE CURRENT (AMPS)
B
I , COLLECTOR CURRENT (AMPS)
C
Figure 11. Collector Emitter Saturation Voltage
vs Base Current
Figure 12. Base Emitter Saturation Voltage vs.
Collector Current
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4
EMF5XV6T5
1.2
55
50
V
= 3.0 V
CE
f = 1 MHz
= 0 A
T = 25°C
A
I
C
1
0.8
0.6
0.4
0.2
0
−55°C
25°C
45
40
35
30
25
20
T = 125°C
A
0.001
0.01
0.1
1
0
1
2
3
4
5
6
I , COLLECTOR CURRENT (AMPS)
C
V
, EMITTER BASE VOLTAGE
EB
Figure 13. Base Emitter Turn−On Voltage vs.
Collector Current
Figure 14. Input Capacitance
35
30
25
20
f = 1 MHz
I
= 0 A
E
T = 25°C
A
15
10
0
2
4
6
8
10
12
14
V
, COLLECTOR BASE VOLTAGE
CB
Figure 15. Output Capacitance
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5
EMF5XV6T5
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A−01
ISSUE F
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
A
−X−
L
6
5
2
4
3
E
−Y−
H
E
MILLIMETERS
DIM MIN NOM MAX MIN
INCHES
NOM MAX
1
A
b
C
D
E
e
0.50
0.17
0.08
1.50
1.10
0.55
0.22
0.12
1.60
1.20
0.5 BSC
0.20
1.60
0.60 0.020 0.021 0.023
0.27 0.007 0.009 0.011
0.18 0.003 0.005 0.007
1.70 0.059 0.062 0.066
1.30 0.043 0.047 0.051
0.02 BSC
b 56 PL
C
e
M
0.08 (0.003)
X Y
L
0.10
1.50
0.30 0.004 0.008 0.012
1.70 0.059 0.062 0.066
H
E
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.0
0.0394
1.35
0.0531
0.5
0.5
0.0197 0.0197
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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EMF5XV6T5/D
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