EMH2308-TL-H [ONSEMI]
P 沟道，功率 MOSFET，-20 V，-3 A，85mΩ，双 EMH8;
| 型号： | EMH2308-TL-H |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，功率 MOSFET，-20 V，-3 A，85mΩ，双 EMH8 |
| 文件： | 总7页 (文件大小：547K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1445A
EMH2308
P-Channel Power MOSFET
http://onsemi.com
–
–
Ω
20V, 3A, 85m , Dual EMH8
Features
•
The EMH2308 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,
thereby enabling high-density mounting
1.8V drive
Halogen free compliance
Protection diode in
•
•
•
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
--20
±10
-- 3
DSS
V
V
GSS
I
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
I
PW 10 s, duty cycle 1%
When mounted on ceramic substrate (900mm2 0.8mm) 1unit
When mounted on ceramic substrate (900mm2 0.8mm)
--20
1.0
A
≤
μ
≤
DP
P
P
W
W
°C
°C
×
D
T
1.2
×
Channel Temperature
Storage Temperature
Tch
150
Tstg
--55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: EMH8
7045-002
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 3,000 pcs./reel
0.2
0.125
EMH2308-TL-H
8
5
Packing Type : TL
Marking
MH
TL
Lot No.
1
4
0.5
2.0
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Electrical Connection
8
7
6
5
EMH8
1
2
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
71112 TKIM/41509PE MSIM TC-00001891 No. A1445-1/7
EMH2308
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
--20
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I =--1mA, V =0V
D GS
(BR)DSS
I
V
=--20V, V =0V
--1
A
A
μ
DSS
DS GS
I
V
=±8V, V =0V
±10
μ
GSS
GS DS
V
(off)
|
V
=--10V, I =--1mA
--0.4
2.1
--1.3
V
GS
yfs
DS D
Forward Transfer Admittance
V
DS
=--10V, I =--1.5A
D
3.6
S
|
R
R
R
(on)1
(on)2
(on)3
I
=--3A, V =--4.5V
GS
65
98
85
137
235
m
Ω
Ω
Ω
DS
DS
DS
D
Static Drain-to-Source On-State Resistance
I
D
=--1.0A, V =--2.5V
GS
m
m
I
D
=--0.5A, V =--1.8V
GS
155
320
66
Input Capacitance
Ciss
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=--10V, f=1MHz
pF
pF
ns
DS
50
t
t
t
t
(on)
7.1
21
d
r
ns
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
37
ns
d
f
32
ns
Total Gate Charge
Qg
4.0
0.6
1.1
--0.83
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=--10V, V =--4.5V, I =--3A
DS
GS
D
V
SD
I =--3A, V =0V
S GS
--1.2
Switching Time Test Circuit
V = --10V
DD
V
IN
0V
--4.5V
I
= --1.5A
D
V
IN
R =6.67Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
EMH2308
P. G
50Ω
S
Ordering Information
Device
Package
EMH8
Shipping
memo
EMH2308-TL-H
3,000pcs./reel
Pb Free and Halogen Free
No. A1445-2/7
EMH2308
I
-- V
DS
I
-- V
D
D GS
--3.0
--2.5
--2.0
--1.5
--1.0
--5.0
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
V
= --10V
DS
--1.5V
= --1.2V
--0.5
0
--0.5
0
V
GS
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 --2.2
IT14534
Drain-to-Source Voltage, V
DS
-- V
IT14533
Gate-to-Source Voltage, V -- V
GS
R
(on) -- V
R
(on) -- Ta
DS
GS
DS
240
210
180
150
120
90
240
220
200
180
160
140
120
100
80
Ta=25°C
I
= --0.5A
D
--1A
--3A
60
60
40
30
0
20
0
0
--1
--2
--3
--4
--5
--6
--7
--8
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
-- V
IT14535
Ambient Temperature, Ta -- °C
IT14536
GS
I
S
-- V
SD
| yfs | -- I
D
10
7
5
V
= --10V
V
=0V
DS
GS
7
5
3
2
3
2
--1.0
7
5
3
2
1.0
7
5
--0.1
7
5
3
2
3
2
0.1
--0.01
--0.01
2
3
5
7
2
3
5
7
--1.0
2
3
5
7
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
--1.1
--0.1
Drain Current, I -- A
D
IT14537
Diode Forward Voltage, V
SD
Ciss, Coss, Crss -- V
DS
-- V
IT14538
SW Time -- I
D
5
7
5
V
V
= --10V
= --4.5V
f=1MHz
DD
GS
3
2
3
2
100
7
5
3
2
100
7
5
10
t (on)
d
7
5
3
2
3
2
2
3
5
7
2
3
5
7
2
3
5
7
0
--2
--4
--6
--8
--10 --12 --14 --16 --18 --20
IT14540
--0.01
--0.1
--1.0
--10
IT14539
Drain Current, I -- A
Drain-to-Source Voltage, V
DS
-- V
D
No. A1445-3/7
EMH2308
V
GS
-- Qg
A S O
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
5
V
I
= --10V
DS
= --3A
3
2
I
= --20A
PW≤10μs
DP
D
--10
7
5
I = --3A
D
3
2
--1.0
7
5
3
2
Operation in this area
--0.1
is limited by R (on).
DS
7
5
Ta=25°C
3
2
--0.5
0
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
--0.01
--0.01
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
2
3
5
7
2
3
5
7
2
3
5
7
2
3
--0.1
--1.0
--10
Total Gate Charge, Qg -- nC
IT14541
Drain-to-Source Voltage, V
-- V
IT14542
DS
P
-- Ta
D
1.4
1.2
1.0
0.8
0.6
0.4
When mounted on ceramic substrate
(900mm2×0.8mm)
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT14543
No. A1445-4/7
EMH2308
Embossed Taping Specification
EMH2308-TL-H
No. A1445-5/7
EMH2308
Outline Drawing
Land Pattern Example
EMH2308-TL-H
Mass (g) Unit
Unit: mm
0.008
mm
* For reference
0.3
0.5
No. A1445-6/7
EMH2308
Note on usage : Since the EMH2308 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1445-7/7
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