EMT1DXV6_14 [ONSEMI]
Dual General Purpose Transistor;
| 型号： | EMT1DXV6_14 |
| 厂家： | 
ONSEMI |
| 描述： | Dual General Purpose Transistor |
| 文件： | 总4页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EMT1DXV6
Dual General Purpose
Transistor
PNP Dual
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT−563 which is designed for low
power surface mount applications.
http://onsemi.com
(3)
(2)
(1)
Q
Features
• Lead−Free Solder Plating
• Low V
, t0.5 V
Q
CE(SAT)
1
2
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
(4)
(5)
(6)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
6
MAXIMUM RATINGS
1
Rating
Symbol
Value
−60
Unit
V
SOT−563
CASE 463A
STYLE 1
Collector−Emitter Voltage
Collector−Base Voltage
V
CEO
V
CBO
V
EBO
−50
V
Emitter−Base Voltage
−6.0
−100
V
Collector Current − Continuous
THERMAL CHARACTERISTICS
I
C
mAdc
MARKING DIAGRAM
Characteristic
(One Junction Heated)
3T M G
Symbol
Max
Unit
G
Total Device Dissipation
P
D
mW
1
T = 25°C
357
(Note 1)
2.9
A
mW/°C
3T = Specific Device Code
Derate above 25°C
M
G
= Month Code
= Pb−Free Package
(Note 1)
Thermal Resistance,
Junction-to-Ambient
R
350
(Note 1)
°C/W
q
(Note: Microdot may be in either location)
JA
Characteristic
(Both Junctions Heated)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Symbol
Max
Unit
Total Device Dissipation
P
D
mW
T = 25°C
500
(Note 1)
4.0
A
mW/°C
Derate above 25°C
(Note 1)
Thermal Resistance,
Junction-to-Ambient
R
250
(Note 1)
°C/W
°C
q
JA
Junction and Storage
Temperature Range
T , T
J
−55 to +150
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ Minimum Pad.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
November, 2014 − Rev. 2
EMT1DXV6T1/D
EMT1DXV6
ELECTRICAL CHARACTERISTICS (T = 25°C)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Collector−Base Breakdown Voltage
V
V
V
−60
−
−
Vdc
(BR)CBO
(BR)CEO
(BR)EBO
(I = −50 mAdc, I = 0)
C
E
Collector−Emitter Breakdown Voltage
(I = −1.0 mAdc, I = 0)
−50
−6.0
−
−
−
−
−
−
Vdc
Vdc
nA
C
B
Emitter−Base Breakdown Voltage
(I = −50 mAdc, I = 0)
−
E
E
Collector−Base Cutoff Current
(V = −30 Vdc, I = 0)
I
−0.5
−0.5
CBO
CB
E
Emitter−Base Cutoff Current
(V = −5.0 Vdc, I = 0)
I
−
mA
EBO
EB
B
Collector−Emitter Saturation Voltage (Note 2)
(I = −50 mAdc, I = −5.0 mAdc)
V
Vdc
−
CE(sat)
−
−
−
−0.5
560
C
B
DC Current Gain (Note 2)
(V = −6.0 Vdc, I = −1.0 mAdc)
h
FE
120
CE
C
Transition Frequency
(V = −12 Vdc, I = −2.0 mAdc, f = 30 MHz)
f
MHz
pF
T
−
−
140
3.5
−
−
CE
C
Output Capacitance
(V = −12 Vdc, I = 0 Adc, f = 1 MHz)
C
OB
CB
E
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
ORDERING INFORMATION
†
Device
EMT1DXV6T1G
Package
Shipping
SOT−563
(Pb−Free)
4000 / Tape & Reel
NSVEMT1DXV6T1G*
EMT1DXV6T5G
SOT−563
(Pb−Free)
4000 / Tape & Reel
8000 / Tape & Reel
8000 / Tape & Reel
SOT−563
(Pb−Free)
NSVEMT1DXV6T5G*
SOT−563
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
http://onsemi.com
2
EMT1DXV6
TYPICAL CHARACTERISTICS
1000
V
CE
= 10 V
T = 25°C
A
T = 25°C
A
120
90
T = 75°C
A
T = -25°C
A
300 mA
100
250
200
150
100
60
30
0
I = 50 mA
B
10
0.1
0
3
6
9
12
15
1
10
100
V
CE
, COLLECTOR VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
Figure 1. IC − VCE
Figure 2. DC Current Gain
2
900
T = 25°C
A
800
700
600
500
400
300
1.5
1
T = 25°C
CE
0.5
0
A
200
100
0
V
= 5 V
0.01
0.1
1
10
100
0.2 0.5
1
5
10 20 40 60 80 100 150 200
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 3. Collector Saturation Region
Figure 4. On Voltage
13
14
12
11
10
12
10
8
9
8
7
6
4
2
0
6
0
1
2
3
4
0
10
20
(V)
30
40
V
EB
(V)
V
CB
Figure 5. Capacitance
Figure 6. Capacitance
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3
EMT1DXV6
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A
ISSUE F
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
A
−X−
L
6
5
2
4
3
E
−Y−
H
E
MILLIMETERS
DIM MIN NOM MAX
INCHES
NOM MAX
MIN
1
A
b
C
D
E
e
0.50
0.17
0.08
1.50
1.10
0.55
0.22
0.12
1.60
1.20
0.5 BSC
0.20
1.60
0.60 0.020 0.021 0.023
0.27 0.007 0.009 0.011
0.18 0.003 0.005 0.007
1.70 0.059 0.062 0.066
1.30 0.043 0.047 0.051
0.02 BSC
b 56 PL
C
e
M
0.08 (0.003)
X Y
L
0.10
1.50
0.30 0.004 0.008 0.012
1.70 0.059 0.062 0.066
H
E
STYLE 1:
PIN 1. EMITTER 1
2. BASE 1
SOLDERING FOOTPRINT*
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
0.3
0.0118
6. COLLECTOR 1
0.45
0.0177
1.0
0.0394
1.35
0.0531
0.5
0.5
0.0197 0.0197
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
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expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
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copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
EMT1DXV6T1/D
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