EMX2DXV6T1G [ONSEMI]

Dual NPN Bipolar Transistor;


型号：	EMX2DXV6T1G
厂家：	ONSEMI
描述：	Dual NPN Bipolar Transistor 小信号双极晶体管
文件：	总4页 (文件大小：122K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

EMX2DXV6T5

Preferred Devices

Dual NPN General Purpose

Amplifier Transistor

This NPN transistor is designed for general purpose amplifier

applications. This device is housed in the SOT-563 package which is

designed for low power surface mount applications, where board

space is at a premium.

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Features

DUAL NPN GENERAL

PURPOSE AMPLIFIER

TRANSISTORS

• Reduces Board Space

• High h , 210−460 (Typical)

• Low V

, < 0.5 V

CE(sat)

SURFACE MOUNT

• These are Pb−Free Devices

(3)

(2)

(1)

MAXIMUM RATINGS (T = 25°C)

Rating

Symbol

Value

Unit

Vdc

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

(BR)CBO

(BR)CEO

(BR)EBO

Vdc

7.0

Vdc

Collector Current − Continuous

100

mAdc

THERMAL CHARACTERISTICS

(4) (5)

(6)

Characteristic

(One Junction Heated)

Symbol

Max

Unit

MARKING

DIAGRAM

Total Device Dissipation

357 (Note 1)

2.9 (Note 1)

mW/°C

T = 25°C

Derate above 25°C

Thermal Resistance,

Junction-to-Ambient

350 (Note 1)

°C/W

SOT−563

CASE 463A

STYLE 2

3R M G

Characteristic

(Both Junctions Heated)

Symbol

Max

Unit

Total Device Dissipation

3R = Specific Device Code

500 (Note 1)

4.0 (Note 1)

mW/°C

T = 25°C

= Month Code

Derate above 25°C

= Pb−Free Package

(Note: Microdot may be in either location)

Thermal Resistance,

Junction-to-Ambient

250 (Note 1)

°C/W

Junction and Storage

Temperature Range

T , T

−55 to +150

°C

stg

ORDERING INFORMATION

†

Device

Package

Shipping

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

EMX2DXV6T5

SOT−563 8000/Tape & Reel

(Pb−Free)

EMX2DXV6T5G

SOT−563 8000/Tape & Reel

(Pb−Free)

1. FR−4 @ Minimum Pad

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

November, 2005 − Rev. 2

EMX2DXV6T5/D

EMX2DXV6T5

ELECTRICAL CHARACTERISTICS (T = 25°C)

Characteristic

Symbol

Min

Typ

Max

Unit

Collector-Base Breakdown Voltage

−

Vdc

(BR)CBO

(BR)CEO

(BR)EBO

(I = 50 mAdc, I = 0)

Collector-Emitter Breakdown Voltage

(I = 1.0 mAdc, I = 0)

7.0

−

Vdc

Emitter-Base Breakdown Voltage

(I = 50 mAdc, I = 0)

Collector-Base Cutoff Current

(V = 60 Vdc, I = 0)

0.5

CBO

Emitter-Base Cutoff Current

(V = 7.0 Vdc, I = 0)

−

EBO

Collector-Emitter Saturation Voltage (Note 2)

(I = 50 mAdc, I = 5.0 mAdc)

Vdc

−

CE(sat)

−

0.4

DC Current Gain (Note 3)

(V = 6.0 Vdc, I = 1.0 mAdc)

120

−

560

Transition Frequency

(V = 12 Vdc, I = 2.0 mAdc, f = 30 MHz)

−

180

−

MHz

Output Capacitance

(V = 12 Vdc, I = 0 Adc, f = 1 MHz)

−

2.0

−

2. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.

3. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.

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EMX2DXV6T5

TYPICAL ELECTRICAL CHARACTERISTICS

1000

160 mA

T = 25°C

= 10 V

T = 25°C

T = 75°C

140 mA

120 mA

100 mA

80 mA

60 mA

40 mA

T = −25°C

100

I = 20 mA

0.1

100

, COLLECTOR VOLTAGE (V)

I , COLLECTOR CURRENT (mA)

Figure 1. I_C− V_CE

Figure 2. DC Current Gain

1.5

900

T = 25°C

800

700

600

500

400

300

200

100

T = 25°C

= 5 V

0.5

0.01

0.1

100

0.2 0.5

10 20

60 80 100 150 200

I , BASE CURRENT (mA)

I , COLLECTOR CURRENT (mA)

Figure 3. Collector Saturation Region

Figure 4. On Voltage

(V)

Figure 5. Capacitance

Figure 6. Capacitance

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EMX2DXV6T5

PACKAGE DIMENSIONS

SOT−563, 6 LEAD

CASE 463A−01

ISSUE F

NOTES:

−X−

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD THICKNESS

IS THE MINIMUM THICKNESS OF BASE MATERIAL.

−Y−

MILLIMETERS

DIM MIN NOM MAX MIN

INCHES

NOM MAX

0.50

0.17

0.08

1.50

1.10

0.55

0.22

0.12

1.60

1.20

0.5 BSC

0.20

1.60

0.60 0.020 0.021 0.023

0.27 0.007 0.009 0.011

0.18 0.003 0.005 0.007

1.70 0.059 0.062 0.066

1.30 0.043 0.047 0.051

0.02 BSC

b 56 PL

0.08 (0.003)

X Y

0.10

1.50

0.30 0.004 0.008 0.012

1.70 0.059 0.062 0.066

STYLE 2:

PIN 1. EMITTER 1

2. EMITTER2

3. BASE 2

4. COLLECTOR 2

5. BASE 1

6. COLLECTOR 1

SOLDERING FOOTPRINT*

0.3

0.0118

0.45

0.0177

1.0

0.0394

1.35

0.0531

0.5

0.0197 0.0197

inches

SCALE 20:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

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USA/Canada

ON Semiconductor Website: http://onsemi.com

Order Literature: http://www.onsemi.com/litorder

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Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada

Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

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2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

For additional information, please contact your

local Sales Representative.

EMX2DXV6T5/D

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