ES1F [ONSEMI]
1.0A,UltraFast 恢复整流器;型号: | ES1F |
厂家: | ONSEMI |
描述: | 1.0A,UltraFast 恢复整流器 IOT 光电二极管 |
文件: | 总4页 (文件大小:163K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Fast Rectifiers
ES1F-ES1J
Features
• For Surface Mount Applications
• Glass Passivated Junction
• Low Profile Package
www.onsemi.com
• Easy Pick and Place
• Built-in Strain Relief
• Superfast Recovery Times for High Efficiency
1
2
CATHODE
ANODE
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Value
SMA (DO−214AC)
Color Band Denotes Cathode
CASE 403AE
ES1F ES1G ES1H ES1J
300 400 500 600
Symbol
Parameter
Unit
V
RRM
Maximum Repetitive
Reverse Voltage
V
ORDERING INFORMATION
I
Average Rectified
Forward Current
1.0
30
A
A
F(AV)
†
Device
Package
Shipping
I
Non-repetitive Peak
Forward Surge Current
8.3 ms Single
Half-Sine-Wave
(JEDEC method)
FSM
ES1F
ES1G
ES1H
ES1J
SMA
(Pb−Free)
7500 /
Tape & Reel
SMA
(Pb−Free)
7500 /
Tape & Reel
T
J
Operating Junction
Temperature Range
−55 to 150
−55 to 150
1.47
°C
°C
W
SMA
(Pb−Free)
7500 /
Tape & Reel
T
STG
Storage Temperature
Range
SMA
7500 /
(Pb−Free)
Tape & Reel
P
D
Power Dissipation
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Characteristics
Thermal Resistance, Junction−to−Ambient (Note 1)
Thermal Resistance, Junction−to−Case (Note 1)
Thermal Resistance, Junction−to−Lead (Note 1)
Value
85
Unit
°C/W
°C/W
°C/W
R
θ
JA
JC
R
61
θ
R
35
θ
JL
1. P. C. B mounted on 0.2″ × 0.2″ (5 × 5 mm) copper Pad Area.
ELECTRICAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
C
Value
ES1F
ES1G
ES1H
ES1J
Symbol
Characteristics
Unit
V
V
F
Maximum Forward Voltage @ I = 1.0 A
1.3
1.7
F
T
rr
Maximum Reverse Recovery Time,
35
ns
I = 0.5 A, I = 1.0 A, I = 0.25 A
F
R
RR
I
Maximum Reverse Current @ rated V
mA
R
R
T = 25_C
5.0
100
A
T = 100_C
A
C
Typical Junction Capacitance, V = 4.0 V, f = 1.0 MHz
10.0
8.0
pF
j
R
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
© Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
August, 2020 − Rev. 2
ES1J/D
ES1F−ES1J
TYPICAL PERFORMANCE CHARACTERISTICS
1.2
1.0
0.8
0.6
0.4
30
25
20
8.3 ms Single Half Sine Wave
(JEDEC Method) at T = 120°C
L
RESISTIVEOR
INDUCTIVELOAD
0.2 x 0.2″ (5.0 x 5.0 mm)
COPPERPADAREAS
15
10
5
1
0.2
0
80
90
100
110
120
130
140
150
1
10
100
Number of Cycles at 60 Hz
Lead Temperature (5C)
Figure 1. Maximum Forward Current Derating
Curve
Figure 2. Maximum Non-repetitive Peak Forward
Surge Current
2.5
1000
100
2
T
= 125°C
= 85°C
J
T
A
= −55°C
T
A
= −40°C
T = 25°C
A
10
1.5
1
T
J
1
0.1
T
= 25°C
J
0.5
T
A
= 85°C
T
A
= 125°C
T = 150°C
A
0
0.01
0.01
0
20
40
60
80
100
120
140
0.1
1
10
Percent of Rated Peak Reverse Voltage (%)
I
F
− Forward Current (A)
Figure 3. Forward Current vs. Forward Voltage
Figure 4. Typical Reverse Characteristics
14
Tj = 25°C
ES1F−G
ES1H−J
12
10
f = 1.0 MHz
Vsig = 50 mVp−p
8.0
6.0
4.0
2.0
0
1
100
0
10
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
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2
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SMA
CASE 403AE
ISSUE O
DATE 31 AUG 2016
5.60
4.80
M
B
B
0.13
B
C
B
A
2.65
2.95
2.50
1.65
1.20
1.75
4.30
4.75
4.00
B
A
LAND PATTERN RECOMMENDATION
TOP VIEW
2.50 MAX
A
2.20
1.90
NOTES:
A. EXCEPT WHERE NOTED, CONFORMS
TO JEDEC DO214 VARIATION AC.
0.30
0.05
B
DOES NOT COMPLY JEDEC STANDARD
VALUE.
0.203
0.050
B
C
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF
BURRS, MOLD FLASH AND TIE BAR
PROTRUSIONS.
E. DIMENSIONS AND TOLERANCE AS
PER ASME Y14.5−2009.
E. LAND PATTERN STD. DIOM5025X231M
2.05
1.95
M
0.13
C
B
A
SIDE VIEW
8 °
0 °
R0.15 4X
GAGE PLANE
0.45
0.41
0.15
1.52
0.75
8 °
0 °
DETAIL A
SCALE 20 : 1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13440G
SMA
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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© Semiconductor Components Industries, LLC, 2019
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onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
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