ES2DAF [ONSEMI]
表面贴装超快速整流器;
| 型号： | ES2DAF |
| 厂家： | 
ONSEMI |
| 描述： | 表面贴装超快速整流器 |
| 文件： | 总5页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ES2DAF
Surface Mount Ultrafast
Rectifier
Features
• Fast Switching Speed – Maximum T 35 ns
rr
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• Ultra Thin Profile − Maximum Height of 1.0 mm
• Glass Passivated Junction
• UL Flammability 94V−0 Classification
• MSL 1
1
2
Cathode
Anode
• Green Mold Compound
Ultrafast Rectifier
• These Devices are Pb−Free, Halogen Free Free and are RoHS
Compliant
Specifications
DO−214AD
(SMAF)
CASE 403AD
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Recurrent Peak Reverse Voltage
RMS Reverse Voltage
Value
200
140
200
2
Unit
V
V
RRM
V
RMS
MARKING DIAGRAM
V
V
R
DC Blocking Voltage
V
$Y&Z&3
ES2DAF
I
Average Forward Current
A
F(AV)
I
Peak Forward Surge Current: 8.3 ms
Single Half Sine−Wave Superimposed
on Rated Load (JEDEC Method)
50
A
FSM
Band Indicates Cathode
$Y
&Z
&3
ES2DAF
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Specific Device Code
T
J
Operating Junction Temperature Range
Storage Temperature Range
−55 to +150
−55 to +150
°C
°C
T
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
May, 2018 − Rev. 2
ES2DAF/D
ES2DAF
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Characteristic
Value
25
Unit
°C/W
°C/W
Y
JL
Typical Thermal Characteristics, Junction−to−Lead (Note 1)
R
Typical Thermal Resistance, Junction−to−Ambient (Note 2)
150
q
JA
2
1. Mounted on an FR4 PCB, single−sided copper, with 100 cm copper pad area.
2. Mounted on an FR4 PCB, single−sided copper, mini pad.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Forward Voltage
Conditions
Min
−
Typ
−
Max
0.95
1
Unit
V
F
I = 2.0 A
V
F
I
R
Reverse Current
V
R
= 200 V
−
−
mA
ns
pF
t
rr
Reverse Recovery Time
Junction Capacitance
I = 0.5 A, I = 1.0 A, I = 0.25 A
−
−
35
F
R
rr
C
V
R
= 4 V, f = 1 MHz
−
30
−
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
†
Part Number
Top Mark
Package
Shipping
ES2DAF
ES2DAF
DO−214AD (SMAF)
(Pb−Free/Halogen Free)
10000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
ES2DAF
TYPICAL PERFORMANCE CHARACTERISTICS
2.5
100
10
1
2
1.5
1
0.5
0
0
25
50
75
100
125
150
1
10
100
T , Case Temperature (5C)
C
V , Reverse Bias Voltage (V)
R
Figure 1. Forward Current Derating Curve
Figure 2. Typical Junction Capacitance
10
1
10
T = 125°C
J
T = 150°C
J
1
0.1
T = 150°C
J
T = 125°C
J
0.1
T = 75°C
T = 25°C
J
J
T = 75°C
J
0.01
0.001
T = 25°C
J
0.01
20
40
60
80
100
0.2
0.4
0.6
0.8
1
Percent of Rated Peak Reverse Voltage (%)
V , Forward Voltage (V)
F
Figure 3. Typical Reverse Characteristics
Figure 4. Typical Forward Characteristics
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SMA−FL
CASE 403AD
ISSUE A
DATE 14 JUL 2020
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13439G
SMA−FL
PAGE 1 OF 1
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