ES3D [ONSEMI]
3.0A快速恢复整流器;型号: | ES3D |
厂家: | ONSEMI |
描述: | 3.0A快速恢复整流器 超快速恢复二极管 IOT 光电二极管 |
文件: | 总5页 (文件大小:152K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Fast Rectifiers
ES3A - ES3J
2
1
Anode
Cathode
Features
• For Surface Mount Applications
• Glass−Passivated Junction
• Low−Profile Package
1
• Easy Pick and Place
2
• Built−in Strain Relief
• Superfast Recovery Times for High Efficiency
• These Devices are Pb−Free and Halid Free
SMC
CASE 403AG
MARKING DIAGRAM
ON
ZXYY
DDDD
Z
= Assembly Plant Code
X
YY
= Last Digit of Year of Manufacture
= Weekly Code of Manufacture
DDDD = Specific Device Code
ORDERING INFORMATION
†
Part Number
ES3A
Device Code Marking
Package
Shipping
ES3A
ES3B
ES3C
ES3D
ES3J
DO−214AB (SMC)
(Pb−Free)
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
ES3B
ES3C
ES3D
ES3J
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1999
1
Publication Order Number:
September, 2021 − Rev. 3
ES3J/D
ES3A − ES3J
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Value
ES3C
150
ES3A
ES3B
ES3D
ES3J
Symbol
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current,
Unit
V
V
RRM
50
100
200
600
I
3.0
A
F(AV)
.375” Lead Length T = 75°C
A
I
Non−Repetitive Peak Forward Surge Current 8.3 ms Single
Half−Sine Wave
100
A
FSM
T
Storage Temperature Range
−55 to +150
−55 to +150
°C
°C
STG
T
J
Operating Junction Temperature
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Value
1.66
47
Unit
W
P
D
Power Dissipation
R
Thermal Resistance,
Junction to Ambient (Note 1)
Maximum Land Pattern: 16 x 16 mm
°C/W
q
JA
Minimum Land Pattern: 2.6 x 3.2 mm
Maximum Land Pattern: 16 x 16 mm
Minimum Land Pattern: 2.6 x 3.2 mm
125
12
R
Thermal Resistance,
Junction to Lead (Note 1)
°C/W
q
JL
16
1. Device mounted on FR−4 PCB 0.013 mm.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Value
ES3C
ES3A
ES3B
ES3D
ES3J
1.70
35
Symbol
Parameter
Conditions
I = 3.0 A
Unit
V
F
Maximum Forward Voltage
Reverse Recovery Time
0.95
20
V
F
t
rr
I = 0.5 A,
I
I
Typ.
ns
F
= 1.0 A
R
RR
Max.
30
45
= 0.25 A
I
Maximum Reverse Current
T = 25°C
10
500
45
mA
R
A
at Rated V
R
T = 100°C
A
C
Total Capacitance
V
R
= 4.0 V, f = 1.0 MHz
pF
T
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
ES3A − ES3J
TYPICAL PERFORMANCE CHARACTERISTICS
3.5
3
100
ES3A−ES3D
10
1
2.5
2
Single Phase
Half Wave
60 Hz
Resistive OR
Inductive Load
.375” (9.0 mm) Lead
Lengths
ES3J
1.5
1
0.1
T = 25°C
A
Pulse Width = 300 ms
0.5
0
2% Duty Cycle
0.01
0.4
0.6
0.8
1.4
1.6
1.8
0
25
50
75
100
125
150
175
1.0
1.2
V , Forward Voltage Drop (V)
F
Ambient Temperature (°C)
Figure 1. Forward Current Derating Curve
Figure 2. Forward Voltage Characteristics
1000
100
100
90
80
70
60
50
40
30
20
10
0
T = 100°C
A
T = 75°C
A
10
1
T = 25°C
A
0.1
0.1
0.5
5
10 20 50 100
500
1
0
20
40
60
80
100
120 140
V , Reverse Voltage (V)
R
Percent of Rated Peak Reverse Voltage (%)
Figure 3. Total Capacitance
Figure 4. Reverse Current vs. Reverse Voltage
trr
+0.5 A
50 W
50 W
NONINDUCTIVE
NONINDUCTIVE
0
(−)
DUT
PULSE
−0.25 A
GENERATOR
(Note 2)
50 V
(approx)
(+)
50 W
NONINDUCTIVE
OSCILLOSCOPE
(Note 2)
−1.0 A
1.0 cm
SET TIME BASE FOR
5 / 10 ns / cm
NOTES:
2. Rise time = 7.0 ns max; Input impedance = 1.0 MW 22 pF.
3. Rise time = 10 ns max; Source impedance = 50 W.
Figure 5. Reverse Recovery Time Characteristics and Test Circuit Diagram
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SMC
CASE 403AG
ISSUE O
DATE 31 AUG 2016
8.15
7.75
B
1.96
6.25
5.55
3.27
2.75
3.39
B
6.81
M
0.13
C
B
A
7.15
6.60
A
LAND PATTERN RECOMMENDATION
TOP VIEW
8 °
0 °
R0.15
4X
2.45
1.90
A
2.65 MAX
C
GAGE
PLANE
0.41
0.15
SEATING
PLANE
0.203
0.30
0.05
B
B
0.050
4.70
4.40
°
°
8
0
0.45
M
1.60
0.75
0.13
C
A
SIDE VIEW
DETAIL A
SCALE 2:1
NOTES:
A.
EXCEPT WHERE NOTED, CONFORMS TO
JEDEC DO−214, VARIATION AB
B
DOES NOT COMPLY TO JEDEC STD. VALUE
C. ALL DIMENSIONS ARE IN MILLIMETERS
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR PROTRUSIONS.
E. DIMENSIONS AND TOLERANCING AS PER
ASME Y14.5−2009
F. LAND PATTERN STANDARD: DIOM7957X241M
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13442G
SMC
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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