ESDL2031MX4T5G_技术文档

DATA SHEET

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MARKING

DIAGRAM

ESD Protection Diodes

Ultra Low Capacitance ESD Protection

Diode for High Speed Data Line

X4DFN2 (0201)

CASE 152AX

J

ESDL2031

J

= Specific Device Code

(Rotated 270 degrees)

The ESDL2031 ESD protection diodes are designed to protect high

speed data lines from ESD. Ultra−low capacitance and low ESD

clamping voltage make this device an ideal solution for protecting

voltage sensitive high speed data lines.

PIN CONFIGURATION

AND SCHEMATIC

Features

• Ultra Low Capacitance (0.40 pF Typ, I/O to GND)

1

2

• Protection for the Following IEC Standards:

IEC 61000−4−2 (Level 4)

• Low ESD Clamping Voltage

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

=

Typical Applications

• USB 3.x

• MHL 2.0

• SATA/SAS

• PCI Express

• HDMI

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

J

Rating

Symbol

Value

−55 to +125

−55 to +150

260

Unit

°C

Operating Junction Temperature Range

Storage Temperature Range

T

J

T

stg

°C

Lead Solder Temperature −

Maximum (10 Seconds)

T

L

°C

IEC 61000−4−2 Contact (ESD)

IEC 61000−4−2 Air (ESD)

ESD

30

kV

Maximum Peak Pulse Current

I

pp

9.75

A

8/20 ms @ T = 25°C

A

Maximum Peak Pulse Power

P

pk

72

W

8/20 ms @ T = 25°C

A

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

See Application Note AND8308/D for further description of

survivability specs.

1

Publication Order Number:

July, 2023 − Rev. 3

ESDL2031/D

ESDL2031

ELECTRICAL CHARACTERISTICS

A

I

(T = 25°C unless otherwise noted)

I

PP

Symbol

Parameter

R

DYN

V

RWM

Working Peak Voltage

I

HOLD

I

R

Maximum Reverse Leakage Current @ V

RWM

I

T

R

V

BR

Breakdown Voltage @ I

V

T

V

BR

C

RWM HOLD

I

V

BR

V

R

T

I

Test Current

HOLD RWM

C

T

I

V

Holding Reverse Voltage

Holding Reverse Current

Dynamic Resistance

Maximum Peak Pulse Current

HOLD

I

R

DYN

I

PP

−I

PP

V

C

Clamping Voltage @ I

PP

V

C

= V

+ (I * R

)

HOLD

PP

DYN

V

= V

+ (I * R

)

C

HOLD

PP

DYN

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)

A

Parameter

Symbol

Conditions

Min

Typ

Max

4.0

Unit

V

Reverse Working Voltage

Breakdown Voltage

V

RWM

I/O Pin to GND

I = 1 mA, I/O Pin to GND

V

BR

5.1

8.5

V

T

Reverse Leakage Current

Reverse Holding Voltage

Holding Reverse Current

I

V

= 4.0 V, I/O Pin to GND

0.05

mA

V

R

RWM

V

I/O Pin to GND

2.5

55

HOLD

I

mA

V

Clamping Voltage

TLP (Note 2)

V

5.25

I

PP

= 8 A

IEC61000−4−2 Level 2 Equivalent

( 4 kV Contact, 8 kV Air)

C

I

PP

= 16 A

7.1

IEC61000−4−4 Level 2 Equivalent

( 8 kV Contact, 16 kV Air)

Reverse Peak Pulse Current

I

per IEC61000−4−5 (8x20 ms) Figure 11

= 9.75 A

9.75

A

V

PP

I

PP

Clamping Voltage 8/20 ms

Waveform per Figure 11

V

8.0

C

Dynamic Resistance

R

Pin1 to Pin2

Pin2 to Pin1

0.22

W

DYN

Junction Capacitance

C

V

R

= 0 V, f = 1 MHz

0.40

0.55

pF

J

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. For test procedure see Figure 12 and application note AND8307/D.

2. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.

TLP conditions: Z = 50 W, t = 100 ns, t = 1 ns, averaging window: t = 70 ns to t = 90 ns.

0

p

r

1

2

10

0

100

90

80

70

60

50

40

30

−10

−20

−30

−40

−50

−60

−70

20

10

−80

−90

0

−10

−100

−20

0

20

40

60

TIME (ns)

80

100

120

140

0

20

40

60

80

100

120 140

TIME (ns)

Figure 1. ESD Clamping Voltage Screenshot

Figure 2. ESD Clamping Voltage Screenshot

Positive 8 kV Contact per IEC61000−4−2

Negative 8 kV Contact per IEC61000−4−2

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2

ESDL2031

TYPICAL CHARACTERISTICS

20

18

16

14

12

10

8

10

9

20

18

16

14

12

10

8

10

9

8

7

6

5

4

6

3

6

3

4

2

0

2

1

0

4

2

0

2

1

0

1

2

3

4

5

6

7

8

9

10 11 12

0

1

2

3

4

5

6

7

8

9

10 11 12

VOLTAGE (V)

Figure 3. Positive TLP I−V Curve

Figure 4. Negative TLP I−V Curve

8

7

6

5

4

3

2

1

0

9

8

7

6

5

4

3

2

1

0

2

4

6

8

10

12

0

2

4

6

8

10

12

I

PK

(A)

I

PK

(A)

Figure 5. Positive Clamping Voltage vs. Peak

Figure 6. Negative Clamping Voltage vs. Peak

Pulse Current (t_p= 8/20 ms)

1.E−03

1.E−04

1.E−05

1.E−06

1.E−07

1.E−08

1.E−03

1.E−04

1.E−05

1.E−06

1.E−07

1.E−08

1.E−09

1.E−10

1.E−11

1.E−12

1.E−13

1.E−09

1.E−10

1.E−11

−8 −7 −6 −5 −4 −3 −2 −1

0

1

2

3

4

5

6

7

8

−8 −7 −6 −5 −4 −3 −2 −1

0

1

2

3

4

5

6

7

8

V

R

(V)

V (V)

R

Figure 7. Breakdown Voltage

Figure 8. Reverse Leakage Current

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3

ESDL2031

TYPICAL CHARACTERISTICS

0

−0.2

−0.4

−0.6

−0.8

−1.0

−1.2

−1.4

−1.6

−1.8

−2.0

−2.2

−2.4

−2.6

−2.8

−3.0

m1

m3

m5

m2

m4

m6

1.E+07

1.E+08

1.E+09

1.E+10

FREQUENCY (Hz)

Figure 9. Insertion Loss

rd

Data Rate

(Gb/s)

Fundamental Frequency

(GHz)

3

Harmonic Frequency

(GHz)

Interface

ESDL2031 Insertion Loss (dB)

USB 3.0

5

2.5 (m1)

5.0 (m3)

6.0 (m5)

7.5 (m2)

m1 = −0.23

m2 = −0.81

USB 3.1

10

12

15 (m4)

18 (m6)

m3 = −0.53

m4 = −1.47

HDMI 2.1

m5 = −0.65

m6 = −1.82

Figure 10. ESDL2031 Insertion Loss

t = rise time to peak value [8 ms]

r

t = decay time to half value [20 ms]

f

Peak

Value

100

Half Value

50

0

0 t

r

t

f

TIME (ms)

Figure 11. 8 X 20 ms Pulse Waveform

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4

ESDL2031

IEC61000−4−2 Waveform

IEC 61000−4−2 Spec.

I

peak

First Peak

Current

(A)

100%

90%

Test Volt-

age (kV)

Current at

30 ns (A)

Current at

60 ns (A)

Level

1

2

3

4

2

4

6

8

7.5

15

4

8

2

4

6

8

I @ 30 ns

22.5

30

12

16

I @ 60 ns

10%

t

P

= 0.7 ns to 1 ns

Figure 12. IEC61000−4−2 Spec

50 W Coax

Cable

Transmission Line Pulse (TLP) Measurement

L

Attenuator

S

Transmission Line Pulse (TLP) provides current versus

voltage (I−V) curves in which each data point is obtained

from a 100 ns long rectangular pulse from a charged

transmission line. A simplified schematic of a typical TLP

system is shown in Figure 13. TLP I−V curves of ESD

protection devices accurately demonstrate the product’s

ESD capability because the 10s of amps current levels and

under 100 ns time scale match those of an ESD event. This

is illustrated in Figure 14 where an 8 kV IEC 61000−4−2

current waveform is compared with TLP current pulses at

8 A and 16 A. A TLP I−V curve shows the voltage at which

the device turns on as well as how well the device clamps

voltage over a range of current levels.

÷

50 W Coax

Cable

I

M

V

M

10 MW

DUT

V

C

Oscilloscope

Figure 13. Simplified Schematic of a Typical TLP

System

Figure 14. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms

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5

ESDL2031

ORDERING INFORMATION

Device

†

Package

Shipping

ESDL2031MX4T5G

X4DFN2 (0201)

(Pb−Free)

10,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

HDMI is a registered trademark of HDMI Licensing, LLC.

www.onsemi.com

6

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

X4DFN2, 0.60x0.30, 0.36P

CASE 152AX

ISSUE G

SCALE 8:1

DATE 12 APR 2019

A

B

D

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

PIN 1

2. CONTROLLING DIMENSION: MILLIMETERS.

INDICATOR

MILLIMETERS

E

DIM MIN

NOM MAX

A

A1

b

D

E

e

L

0.175 0.200 0.225

0.018 REF

0.205 0.215 0.225

0.575 0.600 0.625

0.275 0.300 0.325

0.36 BSC

TOP VIEW

SIDE VIEW

A

0.02

0.01

C

0.145 0.155 0.165

A1

GENERIC

MARKING DIAGRAM*

SEATING

PLANE

C

X

e

b

X

= Specific Device Code

*This information is generic. Please refer

to device data sheet for actual part

marking. Pb−Free indicator, “G”, may

or not be present. Some products may

not follow the Generic Marking.

1

M

0.05

C A B

2X

L

C A B

M

0.05

BOTTOM VIEW

RECOMMENDED

SOLDER FOOTPRINT*

0.65

2X

0.27

1

2X

0.26

DIMENSIONS: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON06808G

X4DFN2, 0.60x0.30, 0.36P

PAGE 1 OF 1

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

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onsemi,

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TECHNICAL PUBLICATIONS:

Technical Library: www.onsemi.com/design/resources/technical−documentation

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


型号：	ESDL2031MX4T5G
厂家：	ONSEMI
描述：	超低电容 ESD 保护二极管，用于高速数据线二极管
文件：	总8页 (文件大小：384K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ESDL2031MX4T5G [ONSEMI]

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