FAN1100-F085 [ONSEMI]
点火门极驱动器集成电路;型号: | FAN1100-F085 |
厂家: | ONSEMI |
描述: | 点火门极驱动器集成电路 驱动 驱动器 |
文件: | 总9页 (文件大小:283K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Ignition Gate Drive IC
FAN1100-F085
Description
SOIC8
The FAN1100−F085 is designed to directly drive an ignition IGBT
and control the current and spark event of the coil. The coil current is
controlled via the input pin. When the input is driven high, the output
of the FAN1100−F085 is enabled to turn on the IGBT and start
charging the coil. The FAN1100−F085 will sink a current (IIN) into
the input pin based on programmed current on the RA line.
CASE 751EB
MARKING DIAGRAM
8
An input spike filter suppresses input signals of less then 13 ms in
duration. A Max Dwell timer is included in the FAN1100−F085 which
will turn off the IGBT if the input stays active for longer than the
programmed time. This time interval can be modified through an
external capacitor on the CSSD pin. When the Max Dwell timer is
exceeded, the FAN1100−F085 will enter a Soft−Shut−Down mode
(SSD) slowly dropping the collector current by lowering the gate drive
to the IGBT thereby discharging the coil such as to inhibit a spark
event. Once the soft shutdown operation has started, any transitions on
the input signal are ignored until after completion of the soft shutdown
function. The FAN1100−F085 will also limit the collector current of
ALYW
FAN1100
G
1
FAN1100
= Specific Device Code
= Assembly Lot Code
= Year
= Work Week
= Pb−Free Package
AL
Y
W
G
the IGBT to I
during charging. This again is done through the
C(lim)
sense resistor in the emitter leg of the Ignition IGBT developing a
signal input to the Vsense pin of the FAN1100−F085.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Features
• Signal Line Input Buffer
• Input Spike Filter
• Operation from Ignition or Battery Line
• Ground Shift Tolerance 1.5 V
• Programmable Maximum Dwell Time
• Programmable Input Pull Down Current
• Control IGBT Current Limiting through V
Pin
SENSE
• Soft Shutdown following Max Dwell Time Out
• This is a Pb−Free Device
Applications
The FAN1100−F085 is an advanced Ignition IGBT control IC
available in a SO8 package or die sales. This full featured Smart
Ignition IGBT Driver is particularly advantageous in “switch on coil”
applications where size and system performance of the ignition driver
are important.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
April, 2022 − Rev. 4
FAN1100−F085/D
FAN1100−F085
ORDERING INFORMATION
Part Number
†
Operating Temperature Range
−40°C to 150°C
Package
Shipping
FAN1100−F085
8−SOIC
2500 units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
Recommended External Components
TYPICAL EXTERNAL COMPONENTS
Component
Description
Limits transient currents during load dump
Battery or Ignition voltage filtering
Battery noise transients
Vendor
Parameter
Typ.
200 to 300
0.47
Unit
W
R
R
C
C
C
R
BAT
C
mF
BAT1
C
10
nF
BAT
C
Noise immunity
10
nF
IN
SENSE
R
Sense the collector current
20
mW
Typical Application
V
BATT
R
BAT
Ignition
Coil
C
C
BAT1
BAT
Vbat
RB
OUTPUT
IN
ECU
FAN 1100
V
SENSE
C
R
IN
IN
RA
CSSD
GND
R
SENSE
RA
CSSD
Figure 1. Typical Application
www.onsemi.com
2
FAN1100−F085
Block Diagram
Figure 2. Block Diagram
www.onsemi.com
3
FAN1100−F085
Package Outline
Figure 3. Pin Assignment (Top View)
PIN DESCRIPTION
Name
Pin1
Pin2
Pin3
Pin4
Pin5
Pin6
Pin7
Pin 8
Type
Description
Ground Reference of the Control IC
Signal input
GND
Input
NC
CSSD
RA
Maximum dwell time and Soft−Shut−Down current output (to external capacitor)
Input reference current output (to external resistor)
Gate Drive to the IGBT
Output
V
Sense Input used for Ilim function
SENSE
V
BAT
Supply voltage
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Min.
−0.3
−2
Max.
28
Unit
V
V
BAT
Voltage at V
pin (excl. EMC transients)
BAT
V
IN
Voltage at Input pin with external R
16
V
IN
V
, V
Voltage at RA & C and Output pins
SSD
−0.3
−0.3
0
5
V
RA
CSSD
V
Voltage at Gate Output
Voltage on V pin
6.5
400
150
0.625
200
2
V
OUTPUT
V
mV
°C
W
SENSE
SENSE
T , T
Operating and Storage Temperature Range
−40
J
STG
P
MAX
Maximum power dissipation (continuous) at T = 25°C
C
R
Thermal Resistance − Junction–to−Case (typical)
°C /W
kV
q
JC
V
(pin to pin)
Electrostatic Discharge Voltage (Human Body Model)
according to MIL STD 883D, method 3015.7 and
EOS/ESD Assn. standard S5.1 − 1993
ESD
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
www.onsemi.com
4
FAN1100−F085
RECOMMENDED OPERATING CONDITIONS (Reference Load Characteristics) (Note 1)
Symbol
Characteristic
Collector (Coil) Operating Current
Min.
Typ.
12
Max.
Units
A
I
Ctyp
L
Coil Primary Inductance
1.5
0.4
2
mH
W
P
R
Coil Primary Resistance (25°C)
P
R
Load Resistance (for delay time measurements)
W
LOAD
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
1. onsemi does not recommend exceeding them or designing to Absolute Maximum Ratings.
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
POWER SUPPLY CONDITIONS V
= 6 to 28 V ; T = −40°C to 150°C (unless otherwise specified)
BAT
J
V
BAT1
V
BAT2
I
BAT
Operating voltage
Operating voltage
Supply current
Coil switching function
All functions
4
6
28
28
5
V
V
T = 150 °C, V
= 28 V, RA open,
mA
J
BAT
Input = 5 V
V
V
clamp
I = 10 mA
BATT
35
50
V
CLAMP
BATTERY
SENSE PIN CONDITIONS V
= 6 to 28 V ; T = −40°C to 150 °C (unless otherwise specified)
J
BAT
V
LIMIT
Sense Voltage at current limit
V
> 8 V
185
170
215
mV
BAT
6 V < V
< 8 V
BAT
T
Input spike filter
Delay on rising and falling edge of Input
50% at the input to 10% change at the output
50% at the input to 10% change at the output
13
15
15
ms
ms
ms
SPIKE
T
T
Turn on delay time
Turn off delay time
D1
D2
INPUT CONTROL CONDITIONS V
= 6 to 28 V; T = −40°C to + 150°C (unless otherwise specified)
J
BAT
V
Input low voltage
Input high voltage
1.2
1.7
2
V
V
INL
V
INH
1.5
0.25
0.5
V
INHys
Input voltage hysteresis
0.6
15
V
I
Input current (see Figure 6)
mA
IN
GATE OUTPUT VOLTAGE MAX V
= 6 to 28 V; T = −40°C to 150°C (unless otherwise specified)
BAT
J
V
16 KW pulldown resistor
4.5
0.0
5.25
6
V
V
Vgate max
Vgate low
GMAX
V
GLOW
(0 mA < I
< 0.4 mA @ T = 25°C)
0.2
GATE
DIAGNOSTIC FUNCTIONS AND PROTECTION V
= 6 to 28 V ; T = −40°C to 150°C (unless otherwise specified)
BAT
J
RA
Resistor for input reference
current
5.2
200
kW
CSSD
Minimum dwell time capacitor
Maximum dwell time
Note 2
10
nF
ms
MIN
TD
(CSSD = 50 nF)
30
0.7
0.8
60
2.5
1.5
MAX
I
Soft−Shut−Down slew rate
CSSD Pin current for TDMAX
(I : 80−20% I )
C Clim
1.5
A/ms
mA
SLEW
I
1.25
CSSD1
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Refer to section Maximum Dwell Time and Soft−Shutdown (SSD)
www.onsemi.com
5
FAN1100−F085
TYPICAL PERFORMANCE CHARACTERISTICS
Input and Spike Filter
When the input signal voltage reaches V , the IGBT
will be switched on charging the coil. When the input
in Figure 4. The coil current will not exceed a slew rate of
typical 1.5 A/ms. (Based on ISL9V3040 Ignition IGBT). If
a valid falling edge is received after the time TDMAX, the
edge will be ignored and the soft shutdown will be
completed. The IGBT cannot be subsequently turned on
until a valid rising edge is detected.
If the CSSD capacitor has a value below 2.2 nF or the
CSSD pin is shorted to ground, the maximum dwell time and
SSD functions are disabled. The maximum dwell time is
active for a capacitance value above 10 nF typical. The
maxdwell might be indeterminate for capacitance value
between 2.2 nF and 10 nF.
INH
voltage goes below V , the coil current through the IGBT
INL
will be turned off. If the FAN1100−F085 is in SSD mode, the
input signal control is disabled. After an SSD sequence input
control will be re−enabled after the input has reached a valid
low. Positive and negative spikes of less than Tspike
duration at the input line will be filtered out and will not turn
on/off the IGBT.
Maximum Dwell Time and Soft−Shutdown (SSD)
When the IGBT is turned on, a delay timer, dependent on
the value of the external CSSD capacitor (see Figure 5), is
started. If a valid falling edge has not been received after the
The maximum dwell time is also disabled in case the input
signal is set to high before or at the same time as the battery
voltage. It is recommended to apply the battery voltage
typically 50 ms before the input signal goes high.
time TD
, the IGBT will be turned off slowly as shown
MAX
Figure 4. Dwell Time and Soft−Shut−Down
www.onsemi.com
6
FAN1100−F085
Figure 5 shows the Relationship between the CSSD
capacitor and Max Dwell Time
Figure 5. TDMAX as Function of External CSSD Capacitor
Figure 6 shows the Signal input current vs. IRA current
Figure 6. Interrelationship between Signal Input Current and IRA
www.onsemi.com
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC8
CASE 751EB
ISSUE A
DATE 24 AUG 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13735G
SOIC8
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号:
FAN1112DX_NL
Fixed Positive LDO Regulator, 1.2V, 1.2V Dropout, PSSO3, LEAD FREE, PLASTIC, TO-252, 3 PIN
FAIRCHILD
FAN1112SX_NL
Fixed Positive LDO Regulator, 1.2V, 1.2V Dropout, BIPolar, PDSO4, PLASTIC, SOT-223, 4 PIN
FAIRCHILD
FAN1117AD
Adjustable Positive LDO Regulator, 1.25V Min, 15V Max, 1.2V Dropout, BIPolar, PSSO2, POWER, PLASTIC, TO-252, DPAK-3
FAIRCHILD
FAN1117AD-1.8
Fixed Positive LDO Regulator, 1.8V, 1.2V Dropout, BIPolar, PSSO2, PLASTIC, TO-252, 3 PIN
FAIRCHILD
FAN1117AD-2.5
Fixed Positive LDO Regulator, 2.5V, 1.2V Dropout, BIPolar, PSSO2, PLASTIC, TO-252, 3 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明