FAN23SV60MPX [ONSEMI]
10A,24V 高能效 PoL 稳压器;型号: | FAN23SV60MPX |
厂家: | ONSEMI |
描述: | 10A,24V 高能效 PoL 稳压器 稳压器 |
文件: | 总23页 (文件大小:1682K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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September 2015
FAN23SV60
10 A Synchronous Buck Regulator
Description
Features
The FAN23SV60 is a highly efficient synchronous buck
regulator. The regulator is capable of operating with an
input range from 7 V to 24 V and supporting up to 10 A
continuous load currents.
.
.
VIN Range: 7 V to 24 V Using Internal Linear
Regulator for Bias
VIN Range: 4.5 V to 5.5 V with VIN/PVIN/PVCC
Connected to Bypass Internal Regulator
The FAN23SV60 utilizes Fairchild’s constant on-time
control architecture to provide excellent transient
response and to maintain a relatively constant switching
frequency. This device utilizes Pulse Frequency
Modulation (PFM) mode to maximize light-load
efficiency by reducing switching frequency when the
inductor is operating in discontinuous conduction mode
at light loads, while clamping the minimum frequency
above the audible range with ultrasonic mode.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
High Efficiency: Over to 96% Peak
Continuous Output Current: 10 A
Internal Linear Bias Regulator
Accurate Enable facilitates VIN UVLO Functionality
PFM Mode for Light-Load Efficiency
Excellent Line and Load Transient Response
Precision Reference: ±1% Over Temperature
Output Voltage Range: 0.6 to 5.5 V
Programmable Frequency: 200 kHz to 1.5 MHz
Programmable Soft-Start
Switching frequency and over-current protection can
be programmed to provide a flexible solution for
various applications. Output over-voltage, under-
voltage, over-current, and thermal shutdown protections
help prevent damage to the device during fault
conditions. After thermal shutdown is activated, a
hysteresis feature restarts the device when normal
operating temperature is reached.
Low Shutdown Current
Adjustable Sourcing Current Limit
Internal Boot Diode
Thermal Shutdown
Halogen and Lead Free, RoHS Compliant
Applications
.
.
.
.
.
.
Mainstream Notebooks
Servers and Desktop Computers
Game Consoles
Telecommunications
Storage
Base Stations
Ordering Information
Operating
Temperature Range
Output
Current (A)
Part Number
Configuration
PFM with Ultrasonic Mode
Package
34-Lead, PQFN,
5.5 mm x 5.0 mm
FAN23SV60MPX
-40 to 125°C
10
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN23SV60 • Rev. 1.10
Typical Application Diagrams
VIN = 19V
VIN = 19V
R11
10Ω
C10
2.2µF
C9
0.1µF
CIN
0.1µF
CIN
3x10µF
R7
64.9kΩ
PVCC
VIN
PVIN
VCC
EN
Ext
EN
C3
0.1µF
R8
10kΩ
VOUT = 1.2V
IOUT=0-10A
BOOT
SW
FAN23SV60
R7, R8 used for Accurate EN
R7, R8 open for Ext EN
L1
0.72µH
PGOOD
ILIM
SOFT START
FREQ
R2
1.5kΩ
C4
0.1µF
COUT
6x47µF
R5 1.62kΩ
R3
10kΩ
C5
100pF
C7
15nF
FB
R9
54.9kΩ
R4
10kΩ
AGND
PGND
Figure 1. Typical Application with VIN = 19 V
VIN = 5V
R11
10Ω
C10
2.2µF
C9
0.1µF
CIN
CIN
0.1µF
3x10µF
PVCC
VIN
PVIN
VCC
EN
Ext
EN
C3
0.1µF
VOUT = 1.2V
IOUT=0-10A
BOOT
SW
FAN23SV60
L1
0.72µH
PGOOD
ILIM
SOFT START
R2
1.5kΩ
C4
0.1µF
COUT
6x47µF
R5 1.62kΩ
R3
10kΩ
C5
100pF
C7
15nF
FREQ
FB
R9
54.9kΩ
R4
10kΩ
AGND
PGND
Figure 2. Typical Application with VIN = 5 V
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN23SV60 • Rev. 1.10
2
Functional Block Diagram
VIN
BOOT PVIN
PVCC
Linear
Regulator
PVCC
VCC
VCC
VCC UVLO
ENABLE
1.26V/1.14V
PVCC
EN
VCC
VCC
10µA
Modulator
HS Gate
Driver
SS
FB
FB
Comparator
VREF
SW
PFM
Comparator
FREQ
Control
Logic
2nd Level OVP
Comparator
x1.2
PVCC
1st Level OVP
Comparator
x1.1
x0.9
LS Gate
Driver
Under-Voltage
Comparator
VCC
PGOOD
Thermal
Shutdown
10µA
Current Limit
Comparator
AGND
ILIM
PGND
Figure 3. Block Diagram
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN23SV60 • Rev. 1.10
3
Pin Configuration
5
5
7
6
4
2
1
3
4
6
8
9
8
3
2
7
1
9
PVIN 10
PVIN 11
34 NC
33 NC
NC
34
33
10 PVIN
PVIN
(P2)
11
12
13
NC
PVIN
FREQ
SS
FREQ
32
31
SW 12
SW 13
32
31
SW
SW
SS
AGND
(P1)
SW
(P3)
SW 14
SW 15
SW 16
SW 17
PGOOD 30
SW
SW
SW
SW
30 PGOOD
14
15
EN
29
28
27
EN
29
28
27
16
17
NC
FB
NC
FB
21
20
19
18
18
19
20
21
22
23
24
25
26
25
24
23
22
26
Figure 4. Pin Assignments (Bottom View)
Figure 5. Pin Assignments (Top View)
Pin Definitions
Name
PVIN
VIN
Pad / Pin
Description
P2, 5-11
1
Power input for the power stage
Power input to the linear regulator; used in the modulator for input voltage feed-forward
Power output of the linear regulator; directly supplies power for the low-side gate driver
and boot diode. Can be connected to VIN and PVIN for operation from 5 V rail.
PVCC
25
VCC
PGND
AGND
SW
26
Power supply input for the controller
18-21
Power ground for the low-side power MOSFET and for the low-side gate driver
Analog ground for the analog portions of the IC and for substrate
P1, 4, 23
P3, 2, 12-17, 22 Switching node; junction between high-and low-side MOSFETs
Supply for high-side MOSFET gate driver. A capacitor from BOOT to SW supplies the
charge to turn on the N-channel high-side MOSFET. During the freewheeling interval
(low-side MOSFET on), the high-side capacitor is recharged by an internal diode
BOOT
3
connected to PVCC.
ILIM
FB
24
27
29
31
Current limit. A resistor between ILIM and SW sets the current limit threshold.
Output voltage feedback to the modulator
EN
SS
Enable input to the IC. Pin must be driven logic high to enable, or logic low to disable.
Soft-start input to the modulator
On-time and frequency programming pin. Connect a resistor between FREQ and
AGND to program on-time and switching frequency.
FREQ
32
PGOOD
NC
30
Power good; open-drain output indicating VOUT is within set limits.
Leave pin open or connect to AGND.
28, 33-34
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN23SV60 • Rev. 1.10
4
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
VPVIN
Parameter
Power Input
Conditions
Referenced to PGND
Min.
Max.
Unit
-0.3
-0.3
-0.3
-0.3
-1
30.0
30.0
30.0
33.0
30.0
30.0
6.0
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
°C
°C
VIN
Modulator Input
Referenced to AGND
Referenced to PVCC
VBOOT
Boot Voltage
Referenced to PVCC, <20 ns
Referenced to PGND, AGND
Referenced to PGND, AGND < 20 ns
Referenced to SW
VSW
SW Voltage to GND
-5
Boot to SW Voltage
Boot to PGND
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
VBOOT
Referenced to PGND
30
VPVCC
VVCC
VILIM
VFB
Gate Drive Supply Input
Controller Supply Input
Current Limit Input
Output Voltage Feedback
Enable Input
Referenced to PGND, AGND
Referenced to PGND, AGND
Referenced to AGND
6.0
6.0
6.0
Referenced to AGND
6.0
VEN
Referenced to AGND
6.0
VSS
Soft Start Input
Referenced to AGND
6.0
VFREQ
Frequency Input
Referenced to AGND
6.0
VPGOOD Power Good Output
Referenced to AGND
6.0
Human Body Model, JESD22-A114(1)
Charged Device Model, JESD22-C101(2)
2000
2500
+150
+150
ESD
Electrostatic Discharge
TJ
Junction Temperature
Storage Temperature
TSTG
-55
Note:
1. Exception for FB pin up to 350V
2. Exception for FB pin up to 500V
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to Absolute Maximum Ratings.
Symbol
VPVIN
VIN
Parameter
Power Input
Conditions
Referenced to PGND
Referenced to AGND
Min.
7
Max.
24
Unit
V
Modulator Input
Junction Temperature
Load Current
7
24
V
TJ
-40
+125
15
°C
A
ILOAD
TA=25°C, No Airflow
VPVIN, VIN , VPVCC Connected for 5 V
Rail Operation and Referenced to
PGND, AGND
PVIN, VIN, and Gate Drive
Supply Input
VPVIN, VIN , VPVCC
4.5
5.5
V
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN23SV60 • Rev. 1.10
5
Thermal Characteristics
The thermal characteristics were evaluated on a 4-layer pcb structure (1 oz/1 oz/1 oz/1 oz) measuring 7 cm x 7 cm).
Symbol
Parameter
Typical
Unit
Thermal Resistance, Junction-to-Ambient
35
2.7
2.3
°C/W
°C/W
°C/W
JA
ψJC
Thermal Characterization Parameter, Junction-to-Top of Case
Thermal Characterization Parameter, Junction-to-PCB
ψJPCB
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN23SV60 • Rev. 1.10
6
Electrical Characteristics
Unless otherwise noted; VIN=12 V, VOUT=1.2 V, and TA=TJ = -40 to +125°C. (4)
Symbol
Parameter
Condition
Min.
Typ.
Max.
Unit
Supply Current
IVIN,SD
IVIN,Q
Shutdown Current
Quiescent Current
EN=0 V
16
µA
mA
mA
EN=5 V, Not Switching
EN=5 V, fSW=500 kHz
1.8
IVIN,GateCharge Gate Charge Current
14
Linear Regulator
VREG
IREG
Regulator Output Voltage
Regulator Current Limit
4.75
60
5.00
5.25
V
mA
Reference, Feedback Comparator
VFB
IFB
FB Voltage Trip Point
FB Pin Bias Current
590
596
0
602
100
mV
nA
-100
Modulator
RFREQ=56.2 k, VIN=10 V,
tON=250 ns, No Load
tON
On-Time Accuracy
-20
20
%
tOFF,MIN
tON,MIN
DMIN
Minimum SW Off-Time
Minimum SW On-Time
Minimum Duty Cycle
320
45
374
ns
ns
FB=1 V
0
%
fMINF
Minimum Frequency Clamp
18.2
25.4
32.7
kHz
Soft-Start
ISS
Soft-Start Current
SS=0 V
7
10
13
µA
%
tON,SSMOD
Soft-Start On-Time Modulation
SS<0.6 V
VFB=0.6 V
25
100
VSSCLAMP,NOM Nominal Soft-Start Voltage Clamp
400
40
mV
Soft-Start Voltage Clamp in Overload
VSSCLAMP,OVL
Condition
VFB=0.3 V, OC Condition
mV
PFM Zero-Crossing Detection Comparator
VOFF
Current Limit
ILIM
ZCD Offset Voltage
TA=TJ=25°C
-6
0
mV
%
Valley Current Limit Accuracy
ILIM Set-Point Scale Factor
Temperature Coefficient
TA=TJ=25°C, IVALLEY=7 A
-10
10
KILIM
149
ILIMTC
4000
ppm/°C
Enable
VTH+
Rising Threshold
Hysteresis
1.11
1.26
122
1.14
4.5
1.43
1.28
V
mV
V
VHYST
VTH-
Falling Threshold
Enable Voltage Clamp
Clamp Current
1.00
4.3
VENCLAMP
IENCLAMP
IENLK
IEN=20 µA
V
24
100
76
µA
nA
µA
Enable Pin Leakage
Enable Pin Leakage
EN=1.2 V
VEN=5 V
IENLK
UVLO
VON
VCC Good Threshold Rising
Hysteresis Voltage
4.4
V
VHYS
160
mV
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN23SV60 • Rev. 1.10
7
Electrical Characteristics
Unless otherwise noted; VIN=12 V, VOUT=1.2 V, and TA=TJ = -40 to +125°C. (4)
Symbol
Parameter
Condition
Min.
Typ.
Max.
Unit
Fault Protection
VUVP
VVOP1
VOVP2
RPGOOD
PGOOD UV Trip Point
PGOOD OV Trip Point
On FB Falling
86
89
92
115
125
125
2.03
1
%
%
On FB Rising
108
118
111
122
Second OV Trip Point
On FB Rising; LS=On
IPGOOD=2 mA
%
PGOOD Pull-Down Resistance
Ω
tPG,SSDELAY PGOOD Soft-Start Delay
IPG,LEAK PGOOD Leakage Current
Thermal Shutdown
0.82
1.42
ms
µA
TOFF
THYS
Thermal Shutdown Trip Point(3)
Hysteresis(3)
155
15
°C
°C
Internal Bootstrap Diode
VFBOOT Forward Voltage
IR Reverse Leakage
Notes:
3. Guaranteed by design; not production tested.
IF=10 mA
VR=5 V
0.6
V
1000
µA
4. Device is 100% production tested at TA=25°C. Limits over that temperature are guaranteed by design.
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN23SV60 • Rev. 1.10
8
Typical Performance Characteristics
Tested using evaluation board circuit shown in Figure 1 with VIN=19 V, VOUT=1.2 V, fSW=500 kHz, TA=25°C, and no
airflow; unless otherwise specified.
100
90
80
70
60
50
40
30
20
10
100
90
80
70
60
50
40
30
20
10
12VIN_1.05VOUT_500KHZ_0.72UH
12VIN_1.2VOUT_500KHZ_0.72UH
12VIN_3.3VOUT_500KHZ_1.2UH
12VIN_5VOUT_500KHZ_1.8UH
19VIN_1.05VOUT_500KHZ_0.72UH
19VIN_1.2VOUT_500KHZ_0.72UH
19VIN_3.3VOUT_500KHZ_1.8UH
19VIN_5VOUT_500KHZ_1.8UH
0.01
0.1
1
10
0.01
0.1
1
10
Load Current(A)
Load Current(A)
Figure 6. Efficiency vs. Load Current with VIN=19 V
and fSW=500 kHz
Figure 7. Efficiency vs. Load Current with VIN=12 V
and fSW=500kHz
100
90
80
70
60
50
100
90
80
70
60
50
40
30
20
10
12VIN_1.2VOUT_300KHZ_1.2UH
12VIN_1.2VOUT_500KHZ_0.72UH
12VIN_1.2VOUT_1MHZ_0.4UH
12VIN_1.2VOUT_1.5MHZ_0.23UH
40
19VIN_1.2VOUT_300KHZ_1.2UH
30
20
10
19VIN_1.2VOUT_500KHZ_0.72UH
19VIN_1.2VOUT_1MHZ_0.4UH
19VIN_1.2VOUT_1.5MHZ_0.23UH
0.01
0.1
1
10
0.01
0.1
1
10
Load Current(A)
Load Current(A)
Figure 8. Efficiency vs. Load Current with VIN=19 V
and VOUT=1.2 V
Figure 9. Efficiency vs. Load Current with VIN=12 V
and VOUT=1.2 V
90
80
19VIN_1.2VOUT_1.5MHz_0.23uH
19VIN_1.2VOUT_1MHz_0.4uH
19VIN_1.2VOUT_1.5MHz_0.23uH
80
70
19VIN_1.2VOUT_1MHz_0.4uH
19VIN_1.2VOUT_500kHz_0.72uH
70
19VIN_1.2VOUT_500kHz_0.72uH
60
60
50
40
30
20
10
0
50
40
30
20
10
0
0
5
10
15
0
5
10
15
Load Current (A)
Load Current (A)
Figure 10. Case Temperature Rise vs. Load Current Figure 11. Case Temperature Rise vs. Load Current
on 4 Layer PCB, 1 oz Copper, 7 cm x 7 cm on 4 Layer PCB, 1 oz Copper, 7 cm x 7 cm
© 2011 Fairchild Semiconductor Corporation
FAN23SV60 • Rev. 1.10
www.fairchildsemi.com
9
Typical Performance Characteristics
Tested using evaluation board circuit shown in Figure 1 with VIN=19 V, VOUT=1.2 V, fSW=500 kHz, TA=25°C, and no
airflow; unless otherwise specified.
1.212
1.208
1.204
1.2
1.212
1.208
1.204
1.2
0A_1.2VOUT[V]
10A_1.2VOUT[V]
12VIN_1.2VOUT
19VIN_1.2VOUT
1.196
1.192
1.188
1.196
1.192
1.188
7
9
11 13 15 17 19 21 23 25
0
2
4
6
8
10
Load Current(A)
Figure 12. Load Regulation
InputVoltage (V)
Figure 13. Line Regulation
EN (5V/div)
EN (5V/div)
VIN=19V
IOUT=0A
VIN=19V
IOUT=10A
Soft Start (0.5V/div)
VOUT (0.5V/div)
Soft Start (0.5V/div)
VOUT (0.5V/div)
PGOOD (5V/div)
PGOOD (5V/div)
Time (500µs/div)
Time (500µs/div)
Figure 14. Startup Waveforms with 0 A Load Current Figure 15. Startup Waveforms with 10 A Load Current
EN (5V/div)
EN (5V/div)
VIN=19V
IOUT=0A
Soft Start (0.5V/div)
Soft Start (0.5V/div)
VOUT (0.5V/div)
PGOOD (5V/div)
VIN=19V
IOUT=10A
Vout Prebias
VOUT (0.5V/div)
PGOOD (5V/div)
Time (500µs/div)
Time (200µs/div)
Figure 16. Shutdown Waveforms with 10 A
Load Current
Figure 17. Startup Waveforms with Pre-Bias
Voltage on Output
© 2011 Fairchild Semiconductor Corporation
FAN23SV60 • Rev. 1.10
www.fairchildsemi.com
10
Typical Performance Characteristics
Tested using evaluation board circuit shown in Figure 1 with VIN=19 V, VOUT=1.2 V, fSW=500 kHz, TA=25°C, and no
airflow; unless otherwise specified.
VOUT (20mV/div)
VOUT (20mV/div)
VIN=19V
VIN=19V
IOUT=0A
IOUT=10A
VSW (10V/div)
VSW (10V/div)
Time (10µs/div)
Time (10µs/div)
Figure 18. Static Load Ripple at No Load
Figure 19. Static Load Ripple at Full Load
VOUT (20mV/div)
VOUT (20mV/div)
VIN=19V
VOUT=1.2V
VIN=19V
VOUT=1.2V
IOUT (1A/div)
IOUT (1A/div)
Time (50µs/div)
Time (50µs/div)
Figure 20. Operation as Load Changes from 0 A to 2 A Figure 21. Operation as Load Changes from 2 A to 0 A
VOUT (20mV/div)
VOUT (20mV/div)
VIN=19V, VOUT=1.2V
IOUT from 5A to 10A, 2.5A/us
VIN=19V, VOUT=1.2V
IOUT from 0A to 5A, 2.5A/us
IOUT (5A/div)
IOUT (5A/div)
Time (100µs/div)
Time (100µs/div)
Figure 22. Load Transient from 0% to 50%
Load Current
Figure 23. Load Transient from 50% to 100%
Load Current
© 2011 Fairchild Semiconductor Corporation
FAN23SV60 • Rev. 1.10
www.fairchildsemi.com
11
Typical Performance Characteristics
Tested using evaluation board circuit shown in Figure 1 with VIN=19 V, VOUT=1.2 V, fSW=500 kHz, TA=25°C, and no
airflow; unless otherwise specified.
PGOOD indicates UVP
VOUT (1V/div)
With VOUT falling in OCP
PGOOD (5V/div)
Pull VOUT to 2.8V
through 3Ω resistor
VFB (0.5V/div)
VOUT (1V/div)
Soft Start (1V/div)
Level 1
PGOOD (5V/div)
VSW (10V/div)
IL (10A/div)
Level 2
IOUT=0A then short output
Time (200µs/div)
Time (50µs/div)
Figure 24. Over-Current Protection with Heavy Load Figure 25. Over-Voltage Protection Level 1 and Level 2
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN23SV60 • Rev. 1.10
12
Circuit Operation
The FAN23SV60 uses a constant on-time modulation
Constant On-time Modulation
architecture with
a
VIN feed-forward input to
The FAN23SV60 uses a constant on-time modulation
technique, in which the HS MOSFET is turned on for a
fixed time, set by the modulator, in response to the input
voltage and the frequency setting resistor. This on-time
is proportional to the desired output voltage, divided by
the input voltage. With this proportionality, the frequency
is essentially constant over the load range where
inductor current is continuous.
accommodate a wide VIN range. This method provides
fixed switching frequency (fSW) operation when the
inductor operates in Continuous Conduction Mode
(CCM) and variable frequency when operating in Pulse
Frequency Mode (PFM) at light loads. Additional
benefits include excellent line and load transient
response,
cycle-by-cycle
current
limiting,
and
elimination of the need for loop compensation.
For buck converter in Continuous-Conduction Mode
(CCM), the switching frequency fSW is expressed as:
At the beginning of each cycle, FAN23SV60 turns on
the high-side MOSFET (HS) for a fixed duration (tON). At
ꢄꢜꢝꢞ
the end of tON, HS turns off for a duration (tOFF
)
ꢙ
ꢚꢛ
ꢁ
ꢡꢡꢡꢡꢡꢡ
(3)
determined by the operating conditions. Once the FB
voltage (VFB) falls below the reference voltage (VREF), a
new switching cycle begins.
ꢄ
ꢅꢆ ꢟ ꢠꢜꢆ
The on-time generator sets the on-time (tON) for the
high-side MOSFET, which results in the switching
frequency of the regulator during steady-state operation.
To maintain a relatively constant switching frequency
over a wide range of input conditions, the input voltage
information is fed into the on-time generator.
The modulator provides a minimum off-time (tOFF-MIN) of
320 ns to provide a guaranteed interval for low-side
MOSFET (LS) current sensing and PFM operation. tOFF-
is also used to provide stability against multiple
MIN
pulsing and limits maximum switching frequency during
transient events.
tON is determined by:
ꢢꢣꢜꢆ
Enable
ꢠꢜꢆ
ꢁ
ꢟ ꢖꢄꢡꢡꢡꢡꢡ
(4)
ꢤꢣꢜꢆ
The enable pin can be driven with an external logic
signal, connected to a resistive divider from PVIN/Vin to
ground to create an Under-Voltage Lockout (UVLO)
based on the PVIN/VIN supply, or connected to
PVIN/VIN through a single resistor to auto-enable while
operating within the EN pin internal clamp current sink
capability.
where ItON is:
ꢌ
ꢄ
ꢅꢆ
ꢤꢣꢜꢆ
ꢁ
ꢟ
ꢡꢡꢡꢡꢡ
(5)
ꢌꢥ
ꢦꢧꢊꢨ
where RFREQ is the frequency-setting resistor
described in the Setting Switching Frequency section;
CtON is the internal 2.2 pF capacitor; and ItON is the VIN
feed-forward current that generates the on-time.
The EN pin can be directly driven by logic voltages of
5 V, 3.3 V, 2.5 V, etc. If the EN pin is driven by 5 V logic,
a small current flows into the pin when the EN pin
voltage exceeds the internal clamp voltage of 4.3 V. To
eliminate clamp current flowing into the EN pin use a
voltage divider to limit the EN pin voltage to < 4 V.
The FAN23SV60 implements open-circuit detection on
the FREQ pin to protect the output from an infinitely long
on-time. In the event the FREQ pin is left floating,
switching of the regulator is disabled. The FAN23SV60
is designed for VIN input range 7 to 24 V, fSW 200 kHz to
1.5 MHz, resulting in an ItON ratio exceeding 1 to 25.
To implement the UVLO function based on PVIN/VIN
voltage level, select values for R7 and R8 in Figure 1
the tap point reaches 1.26 V when VIN reaches the
desired startup level using the following equation:
As the ratio of VOUT to VIN increases, tOFF,min introduces a
limit on the maximum switching frequency as calculated
in the following equation, where the factor 1.2 is
included in the denominator to provide some headroom
for transient operation:
ꢄ
ꢅꢆꢇꢈꢉ
ꢀ ꢁ ꢂ ꢃ
ꢋ ꢌꢍ
(1)
ꢄꢊꢆꢇꢈꢉ
where VIN,on is the input voltage for startup and VEN,on
is the EN pin rising threshold of 1.26 V. With R8
selected as 10 kΩ, and VIN,on=9 V the value of R7 is
61.9 kΩ.
ꢄꢜꢝꢞ
ꢪꢌ ꢋ
ꢫ
ꢄ
ꢅꢆꢇꢏꢕꢉ
(6)
ꢙ
ꢚꢛ
ꢩ
ꢌꢬꢖ ꢟ ꢠꢜꢦꢦꢇꢏꢕꢉ
The EN pin can be pulled high with a single resistor
connected from VIN to the EN pin. With VIN > 5.5V a
series resistor is required to limit the current flow into
the EN pin clamp to less than 24 µA to keep the internal
clamp within normal operating range. The resistor value
can be calculated from the following equation:
Soft-Start (SS)
A conventional soft-start ramp is implemented to provide
a controlled startup sequence of the output voltage. A
current is generated on the SS pin to charge an external
capacitor. The lesser of the voltage on the SS pin and
the reference voltage is used for output regulation. To
reduce VOUT ripple and achieve a smoother ramp of the
output voltage, tON is modulated during soft-start. tON
starts at 50% of the steady-state on-time (PWM Mode)
and ramps up to 100% gradually.
ꢄꢅꢆꢇꢏꢐꢑ ꢋ ꢄꢊꢆꢇꢒꢓꢐꢏꢔꢇꢏꢕꢉ
ꢊꢆ
ꢎ
(2)
ꢖꢖꢗꢘ
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN23SV60 • Rev. 1.10
13
During normal operation, the SS voltage is clamped to
400 mV above the FB voltage. The clamp voltage drops
to 40 mV during an overload condition to allow the
converter to recover using the soft-start ramp once the
overload condition is removed. On-time modulation
during SS is disabled when an overload condition exists.
To maintain a monotonic soft-start ramp, the regulator is
forced into PFM Mode during soft-start. The minimum
frequency clamp is disabled during soft-start.
Pulse Frequency Modulation (PFM)
One of the key benefits of using a constant on-time
modulation scheme is the seamless transitions in and
out of Pulse Frequency Modulation (PFM) Mode. The
PWM signal is not slave to a fixed oscillator and,
therefore, can operate at any frequency below the target
steady-state frequency. By reducing the frequency
during light-load conditions, the efficiency can be
significantly improved.
The nominal startup time is programmable through an
internal current source charging the external soft-start
The FAN23SV60 provides a Zero-Crossing Detector
(ZCD) circuit to identify when the current in the inductor
reverses direction. To improve efficiency at light load,
the LS MOSFET is turned off around the zero crossing
to eliminate negative current in the inductor. For
predictable operation entering PFM mode the controller
waits for nine consecutive zero crossings before
allowing the LS MOSFET to turn off.
capacitor CSS
:
ꢤꢚꢚ ꢟ ꢠꢚꢚ
ꢄꢧꢊꢦ
ꢢꢚꢚ
ꢁ
ꢡꢡꢡꢡꢡ
(7)
where:
CSS = External soft-start programming capacitor;
In PFM Mode, fSW varies or modulates proportionally to
the load; as load decreases, fSW also decreases. The
switching frequency, while the regulator is operating in
PFM, can be expressed as:
ISS = Internal soft-start charging current source,
10 µA;
tSS = Soft-start time; and
VREF = 600 mV
ꢖ ꢟ ꢭ ꢟ ꢤꢜꢝꢞ
ꢠꢜꢮꢆ ꢟ ꢯꢄꢅꢆ ꢋ ꢄꢜꢝꢞ
ꢄꢜꢝꢞ
ꢙ
ꢚꢛ
ꢁ
ꢟ
ꢡꢡꢡꢡ
(8)
For example; for 1 ms startup time, CSS=15 nF.
ꢄ
ꢅꢆ
ꢰ
The soft-start option can be used for ratiometric tracking.
When EN is LOW, the soft-start capacitor is discharged.
where L is inductance and IOUT is output load current.
Minimum Frequency Clamp
To maintain a switching frequency above the audible
range, the FAN23SV60 clamps the switching frequency
to a minimum value of 18 kHz. The LS MOSFET is
turned on to discharge the output and trigger a new
PWM cycle. The minimum frequency clamp is disabled
during soft-start.
Startup on Pre-Bias
FAN23SV60 allows the regulator to start on a pre-bias
output, VOUT, and ensures VOUT is not discharged during
the soft-start operation.
To guarantee no glitches on VOUT at the beginning of the
soft-start ramp, the LS is disabled until the first positive-
going edge of the PWM signal. The regulator is also
forced into PFM Mode during soft-start to ensure the
inductor current remains positive, reducing the
possibility of discharging the output voltage.
Protection Features
The converter output is monitored and protected against
over-current, over-voltage, under-voltage, and high-
temperature conditions.
Over-Current Protection (OCP)
Internal Linear Regulator
The FAN23SV60 uses current information through the
LS to implement valley-current limiting. While an OC
event is detected, the HS is prevented from turning on
and the LS is kept on until the current falls below the
user-defined set point. Once the current is below the set
point, the HS is allowed to turn on.
The FAN23SV60 includes a linear regulator to facilitate
single-supply operation for self-biased applications.
PVCC is the linear regulator output and supplies power
to the internal gate drivers. The PVCC pin should be
bypassed with a 2.2 µF ceramic capacitor. The device
can operate from a 5 V rail if the VIN, PVIN, and PVCC
pins are connected together to bypass the internal
linear regulator.
During an OC event, the output voltage may droop if the
load current is greater than the current the converter is
providing. If the output voltage drops below the UV
threshold, an overload condition is triggered. During an
overload condition, the SS clamp voltage is reduced to
40 mV and the on-time is fixed at the steady-state
duration. By nature of the control method; as VOUT drops,
the switching frequency is lower due to the reduced rate
of inductor current decay during the off-time.
VCC Bias Supply and UVLO
The VCC rail supplies power to the controller. It is
generally connected to the PVCC rail through a low-
pass filter of a 10 resistor and 0.1 µF capacitor to
minimize any noise sources from the driver supply.
An Under-Voltage Lockout (UVLO) circuit monitors the
VCC voltage to ensure proper operation. Once the VCC
voltage is above the UVLO threshold, the part begins
operation after an initialization routine of 50 µs. There is
no UVLO circuitry on either the PVCC or VIN rails.
The ILIM pin has an open-detection circuit to provide
protection against operation without a current limit.
Under-Voltage Protection (UVP)
If VFB is below the under-voltage threshold of -11% VREF
(534 mV), the part enters UVP and PGOOD pulls LOW.
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN23SV60 • Rev. 1.10
14
Over-Voltage Protection (OVP)
There are two levels of OV protection: +11% and +22%.
During an over-voltage event, PGOOD pulls LOW.
ꢥꢬꢶꢶ ꢟ ꢖꢷ ꢟ ꢙꢚꢛ ꢟ ꢭꢜꢝꢞ ꢟ ꢢꢜꢝꢞ
ꢢꢵ
(12)
ꢖ ꢩ
The minimum value of C5 can be selected to minimize
the capacitive component of ripple appearing on the
feedback pin:
When VFB is > +11% of VREF (666 mV), both HS and LS
turn off. By turning off the LS during an OV event, VOUT
overshoot can be reduced when there is positive
inductor current by increasing the rate of discharge.
Once the VFB voltage falls below VREF, the latched OV
signal is cleared and operation returns to normal.
ꢽꢾꢿꣀ ꢟ ꢸꢾꢿꣀ ꢟ ꢯꣁꢶ ꣂ ꣁꢵꢰ
(13)
ꢸꢹꢺꢻꢼ
ꢁ
ꣁꢖ ꢟ ꣁꢶ ꢟ ꣁꢵ ꢟ ꢸꢵ
Using the minimum value of C5 generally offers the best
transient response, and 100 pF is a good initial value in
many applications. However, under some operating
conditions excessive pulse jitter may be observed. To
reduce jitter and improve stability, the value of C5 can
be increased:
A second over-voltage detection is implemented to
protect the load from more serious failure. When VFB
rises +22% above the VREF (732 mV), the HS turns off,
but the LS is forced on until a power cycle on VCC.
Over-Temperature Protection (OTP)
The FAN23SV60 incorporates an over-temperature
protection circuit that disables the converter when the
die temperature reaches 155°C. The IC restarts when
the die temperature falls below 140°C.
(14)
ꢢꢹ ꣃ ꢖ ꢟ ꢸꢹꢺꢻꢼ
5 V PVCC
Power Good (PGOOD)
The PVCC is the output of the internal regulator that
supplies power to the drivers and VCC. It is crucial to keep
this pin decoupled to PGND with a ≥1 µF X5R or X7R
ceramic capacitor. Because VCC powers internal analog
circuit, it is filtered from PVCC with a 10 Ω resistor and
0.1 µF X7R decoupling ceramic capacitor to AGND.
The PGOOD pin serves as an indication to the system
that the output voltage of the regulator is stable and
within regulation. Whenever VOUT is outside the
regulation window or the regulator is at over-
temperature (UV, OV, and OT), the PGOOD pin is
pulled LOW.
Setting the Output Voltage (VOUT
)
PGOOD is an open-drain output that asserts LOW when
VOUT is out of regulation or when OT is detected.
The output voltage VOUT is regulated by initiating a high-
side MOSFET on-time interval when the valley of the
divided output voltage appearing at the FB pin reaches
VREF. Since this method regulates at the valley of the
output ripple voltage, the actual DC output voltage on
VOUT is offset from the programmed output voltage by the
average value of the output ripple voltage. The initial VOUT
setting of the regulator can be programmed from 0.6 V to
5.5 V by an external resistor divider (R3 and R4):
Application Information
Stability
Constant on-time stability consists of two parameters:
stability criterion and sufficient signal at VFB.
Stability criterion is given by:
ꢶ
ꢵ ꢁ
ꢠꢜꢆ
(15)
ꢄ
꣄
ꢜꢝꢞꣅ ꢋ ꢌ
(9)
ꢊꢚꢧ ꢟ ꢢꢜꢝꢞ
ꢱ
ꢡꢡꢡ
ꢄꢧꢊꢦ
ꢖ
Sufficient signal requirement is given by:
where VREF is 600 mV.
For example; for 1.2 V VOUT and 10 k R3, then R4 is
10 k. For 600 mV VOUT, R4 is left open. VFB is
trimmed to a value of 596 mV when VREF=600 mV, so
the final output voltage, including the effect of the output
ripple voltage, can be approximated by the equation:
ꢲꢤꢅꢆꢳ ꢟ ꢎ ꢲꢄꢦꢴꢡꢡꢡꢡ
(10)
ꢊꢚꢧ
where IIND is the inductor current ripple and VFB is
the ripple voltage on VFB, which should be ≥12 mV.
In certain applications, especially designs utilizing only
ceramic output capacitors, there may not be sufficient
ripple magnitude available on the feedback pin for
stable operation. In this case, an external circuit can be
added to inject ripple voltage into the FB pin.
ꢄ
ꢶ
ꢄꢜꢝꢞꢡ ꢁ ꢄꢦꢴꢡ ꢌ ꣂ ꣂ ꢕꢔ
ꢵ
(16)
ꢖ
Setting the Switching Frequency (fSW)
There are some specific considerations when selecting
the RCC ripple injector circuit. For typical applications,
the value of C4 can be selected as 0.1 µF and
approximate values for R2 and C5 can be determined
using the following equations.
fSW is programmed through external RFREQ as follows:
ꢄꢜꢝꢞ
ꢦꢧꢊꢨ
ꢁ
ꢡ
(17)
ꢖꢥ ꢢꢣꢜꢆ ꢙ
ꢚꢛ
where CtON=2.2 pF internal capacitor that generates
tON. For example; for fSW=500 kHz and VOUT=1.2 V,
select a standard resistor value for RFREQ=54.9 k.
R2 must be small enough to develop 12 mV of ripple:
ꢯ
ꢰ
ꢄ
ꢅꢆ ꢋ ꢄꢜꢝꢞ ꢟ ꢄꢜꢝꢞ
(11)
ꢖ ꢩ
ꢄꢅꢆ ꢟ ꢥꢬꢥꢌꢖꢄ ꢟ ꢢꢵ ꢟ ꢙ
ꢚꢛ
R2 must be selected such that the R2C4 time constant
enables stable operation:
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN23SV60 • Rev. 1.10
15
When calculating COUT
,
usually the dominant
Inductor Selection
requirement is the current load step transient. If the
unloading transient requirement (IOUT transitioning from
HIGH to LOW), is satisfied, then the load transient (IOUT
transitioning LOW to HIGH), is also usually satisfied.
The unloading COUT calculation, assuming COUT has
negligible parasitic resistance and inductance in the
circuit path, is given by:
The inductor is typically selected based on the ripple
current (IL), which is approximately 25% to 45% of the
maximum DC load. The inductor current rating should
be selected such that the saturation and heating current
ratings exceed the intended currents encountered in the
application over the expected temperature range of
operation. Regulators that require fast transient
response use smaller inductance and higher current
ripple; while regulators that require higher efficiency
keep ripple current on the low side.
ꢤꢮ ꣎ ꢋ ꢤꢮ ꢅꢆ
ꢢꢜꢝꢞ ꢁ ꢭ ꢟ
ꢡꢡꢡꢡꢡꢡꢡꢡ
(21)
ꢯꢄꢜꢝꢞ ꣂ ꢲꢄꢜꢝꢞꢰꢮ ꢋ ꢄꢜꢮꢝꢞ
where IMAX and IMIN are maximum and minimum load
steps, respectively and VOUT is the voltage
overshoot, usually specified at 3 to 5%.
The inductor value is given by:
ꢯꢄꢅꢆ ꢋ ꢄꢜꢝꢞꢰ ꢄꢜꢝꢞ
ꢭ ꢁ
ꢟ
ꢡ
(18)
ꢲꢤ ꢟ ꢙ
ꢄ
ꢅꢆ
ꢚꢛ
For example: for VI=19 V, VOUT=1.2 V, 6A IMAX, 2 A IMIN
,
fSW=500 kHz, LOUT=720 nH, and 3% VOUT deviation of
36 mV; the COUT value is calculated to be 263µF. This
capacitor requirement can be satisfied using six 47 µF,
6.3 V-rated X5R ceramic capacitors. This calculation
applies for load current slew rates that are faster than
the inductor current slew rate, which can be defined as
VOUT/L during the load current removal. For reduced-
load-current slew rates and/or reduced transient
requirements, the output capacitor value may be
reduced and comprised of low-cost 22 µF capacitors.
For example: for 19 V VIN, 1.2 V VOUT, 10 A load, 30%
IL, and 500 kHz fSW; L is 720 nH.
Input Capacitor Selection
Input capacitor CIN is selected based on voltage rating,
RMS current ICIN(RMS) rating, and capacitance. For
capacitors having DC voltage bias derating, such as
ceramic capacitors, higher rating is strongly
recommended. RMS current rating is given by:
(19)
ꢤꢒꢅꢆꢯꢧꢚꢰ ꢁ ꢤꢜꢳ꣎ ꢟ ꣏꣐ ꢟ ꢯꢌ ꢋ ꣐ꢰꢡꢡꢡꢡꢡꢡꢡ
Setting the Current Limit
where ILOAD-MAX is the maximum load current and D is
the duty cycle VOUT/VIN. The maximum ICIN(RMS) occurs
at 50% duty cycle.
Current limit is implemented by sensing the inductor
valley current across the LS MOSFET VDS during the LS
on-time. The current limit comparator prevents a new
on-time from being started until the valley current is less
than the current limit.
The capacitance is given by:
The set point is configured by connecting a resistor from
the ILIM pin to the SW pin. A trimmed current is output
onto the ILIM pin, which creates a voltage across the
resistor. When the voltage on ILIM goes negative, an
over-current condition is detected.
ꢤꢜꢳ꣎ ꢟ ꣐ ꢟ ꢯꢌ ꢋ ꣐ꢰ
ꢢꢅꢆ
ꢁ
ꢡꢡꢡꢡꢡꢡ
(20)
ꢙ
ꢚꢛ ꢟ ꢲꢄ
ꢅꢆ
where VIN is the input voltage ripple, normally 1% of
VIN.
For example; for VIN=19 V, VIN=120 mV, VOUT=1.2 V,
10 A load, and fSW=500 kHz; CIN is 9.8 F and ICIN(RMS) is
2.4 ARMS. Select a minimum of two 10 F 25 V-rated
ceramic capacitors with X7R or similar dielectric,
recognizing that the capacitor DC bias characteristic
indicates that the capacitance value falls approximately
60% at VIN=19 V. Also, each 10 µF can carry over
3 ARMS in the frequency range from 100 kHz to 1 MHz,
exceeding the input capacitor current rating
requirements. An additional 1 µF capacitor may be
needed to suppress noise generated by high frequency
switching transitions
RILIM is calculated by:
ꢅꢅ
ꢁ ꢌꢬꢥꢵ ꢟ ꣑ꢅꢅ ꢡꢤꢅꢅꢇ꣒ꢊ꣓
(22)
where KILIM is the current source scale factor, and
IVALLEY is the inductor valley current when the current
limit threshold is reached. The factor 1.04 accounts
for the temperature offset of the LS MOSFET
compared to the control circuit.
With the constant on-time architecture, HS is always
turned on for a fixed on-time; this determines the peak-
to-peak inductor current.
Current ripple I is given by:
Output Capacitor Selection
ꢯꢄꢅꢆ ꢋ ꢄꢜꢝꢞꢰ ꢡꢠꢜꢆ
Output capacitor COUT is also selected based on voltage
rating, RMS current ICIN (RMS) rating, and
capacitance. For capacitors having DC voltage bias
derating, such as ceramic capacitors, higher rating is
highly recommended.
ꢲꢤ ꢁ
ꢡꢡꢡꢡꢡꢡ
(23)
ꢭ
From the equation above, the worst-case ripple occurs
during an output short circuit (where VOUT is 0 V). This
should be taken into account when selecting the current
limit set point.
The FAN23SV60 uses valley-current sensing, the
current limit (IILIM) set point is the valley (IVALLEY).
ꢲꢤ
(24)
ꢤ꣒ꢊ꣓ ꢁ ꢤꢜꢳꢡꢯꢒꢰ
ꢋ
ꢡꢡ
ꢖ
The valley current level for calculating RILIM is given by:
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN23SV60 • Rev. 1.10
16
PGND). This inner PCB layer should have a separate
analog ground (AGND) under the P1 pad and the
associated analog components. AGND and PGND
should be connected together near the IC between
PGND pins 18-21 and AGND pin 23, which connects to
P1 thermal pad.
where ILOAD
current limit threshold is reached.
is the DC load current when the
(CL)
For example: In a converter designed for 10 A steady-
state operation and 3 A current ripple, the current-limit
threshold could be selected at 120% of ILOAD,(MAX) to
accommodate transient operation and inductor value
decrease under loading. As a result, ILOAD,(MAX) is 12 A,
IVALLEY=10.5 A, and RILIM is 1.62 k
The AGND thermal pad (P1) should be connected to
AGND plane on inner layer using four 0.25 mm vias
spread under the pad. No vias are included under PVIN
(P2) and SW (P3) to maintain the PGND plane under
the power circuitry intact.
Boot Resistor
In some applications, especially with higher input
voltage, the VSW ring voltage may exceed derating
Power circuit loops that carry high currents should be
arranged to minimize the loop area. Primary focus
should be to minimize the loop for current flow from the
input capacitor to PVIN, through the internal MOSFETs,
and returning to the input capacitor. The input capacitor
should be as close to the PVIN terminals as possible.
guidelines of 80% to 90% of the absolute rating for VSW
.
In this situation, a resistor can be connected in series
with a boot capacitor (C3 in Figure 1) to reduce the turn-
on speed of the high-side MOSFET to reduce the
amplitude of the VSW ring voltage. If necessary, a
resistor and capacitor snubber can be added from VSW
to PGND to reduce the magnitude of the ringing voltage.
Please contact Fairchild Customer Support for
assistance selecting a boot resistor or snubber circuit in
applications that operate above a 21 V typical input
voltage.
The current return path from PGND at the low-side
MOSFET source to the negative terminal of the input
capacitor can be routed under the inductor and also
through vias that connect the input capacitor and low-
side MOSFET source to the PGND region under the
power portion of the IC.
The SW node trace that connects the source of the
high-side MOSFET and the drain of the low-side
MOSFET to the inductor should be short and wide.
Printed Circuit Board (PCB) Layout
Guidelines
To control the voltage across the output capacitor, the
output voltage divider should be located close to the FB
pin, with the upper FB voltage divider resistor connected
to the positive side of the output capacitor and the
bottom resistor connected to the AGND portion of the
FAN23SV60 device.
The following points should be considered before
beginning a PCB layout using the FAN23SV60. A
sample PCB layout from the evaluation board is shown
in Figure 26 - Figure 29 following these layout
guidelines.
Power components (input capacitors, output capacitors,
inductor, and FAN23SV60 device) should be placed on
a common side of the PCB in close proximity to each
other and connected using surface copper.
When using ceramic capacitors with external ramp
injection circuitry (R2, C4, C5 in Figure 1), R2 and C4
should be connected near the inductor and coupling
capacitor C5 should be placed near FB pin to minimize
FB pin trace length.
Sensitive analog components including SS, FB, ILIM,
FREQ, and EN should be placed away from the high-
voltage switching circuits such as SW and BOOT and
connected to their respective pins with short traces.
Decoupling capacitors for PVCC and VCC should be
located close to their respective device pins.
SW node connections to BOOT, ILIM, and ripple
injection resistor R2 should be through separate traces.
The inner PCB layer closest to the FAN23SV60 device
should have power ground (PGND) under the power
processing portion of the device (PVIN, SW, and
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN23SV60 • Rev. 1.10
17
Figure 26. Evaluation Board Top Layer Copper
Figure 27. Evaluation Board Inner Layer 1 Copper
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN23SV60 • Rev. 1.10
18
Figure 28. Evaluation Board Inner Layer 2 Copper
Figure 29. Evaluation Board Bottom Layer Copper
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN23SV60 • Rev. 1.10
19
5.50±0.10
26
18
1.05±0.10
17
10
27
34
(30X)
0.25±0.05
5.00±0.10
0.25±0.05
0.025±0.025
1
9
SEATING
PLANE
PIN#1
INDICATOR
SEE
DETAIL 'A'
SCALE: 2:1
1.58±0.01
(0.43)
2.18±0.01
(0.35)
0.50±0.01
9
1
(0.25)
0.40±0.01 (30X)
(0.35) 34
10
0.68±0.01
(0.35)
3.50±0.01
2.58±0.01
(1.75)
17
(0.33)
(0.35)
(0.75)
27
0.43±0.01
18
26
(0.35)
(0.25)
(3X)
(0.28)
(0.24)
NOTES: UNLESS OTHERWISE SPECIFIED
A) NO INDUSTRY REGISTRATION APPLIES.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR
BURRS DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-2009.
1.75±0.01
E) DRAWING FILE NAME: MKT-PQFN34AREV2
F) FAIRCHILD SEMICONDUCTOR
5.70
2.18
2.10
1.58
(0.35)
0.55 (30X)
1.80
26
18
0.55
17
27
(1.75)
2.58
0.68
4.10 3.50
5.20
3.60
0.75
(1.85)
34
10
1
9
(0.30)
(0.35)
0.20
0.30 (30X)
0.50±0.05
0.43
(0.08)
4.10
LAND PATTERN
RECOMMENDATION
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