FAN3100TMPX [ONSEMI]

TTL 输入,单反向或非反向输出,峰值 3A 汲电流,3A 源电流,低侧门极驱动器;
FAN3100TMPX
型号: FAN3100TMPX
厂家: ONSEMI    ONSEMI
描述:

TTL 输入,单反向或非反向输出,峰值 3A 汲电流,3A 源电流,低侧门极驱动器

驱动 驱动器
文件: 总20页 (文件大小:19749K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
www.onsemi.cn  
ꢀꢁ 2ꢀA ꢂꢃꢄꢅꢆꢇꢂꢃ  
SOT235  
CASE 527AH  
WDFN6 2x2, 065P  
CASE 511CY  
FAN3100T, FAN3100C  
ꢈꢉ  
FAN3100 2 A ᧥ᥡ҈
ꢁꢂꢃꢄईʽრꢅꢆͥᖰꢇ  
ꢀἡΒ,ꢀ҈ၴ✈҈ŔꢆꢇꢈNꢈṿ੾ᄚꢈ  
MOSFET ҈ 
 
׏
 ÅTTL (FAN3100T) ᏶  
CMOS (FAN3100C) ͅꢃ。ͥ
׏
şϚƽꢀၓ⒖  
DŽАꢀ⁰ꢀիͅļ
®ᴀիൺѿ。  
FAN3100 ꢈMOSFETꢈ்,
׏
ꢇ⍡ѿ╧
ꢁꢂ  
ᣠଇႆऐᖰᜨ╧。  
FAN3100 ҈
ͥnঘᩣϚŔMillerDrivet ᦖᥤ。  
֬ᥡሇMOSFET
׏ר
MOSFET /ꢁӛŔMillerꢀ  
ꢀἡÅᣠଇႆऐί෱რ૧,
׬
៖  
А
ꢀիᘦဥ٬֭
ױ
ꢀἡѻ。  
PIN ASSIGNMENT  
IN+  
AGND  
VDD  
1
2
3
6
5
4
IN  
PGND  
OUT  
2 x 2 mm 6 ꢀꢁ MLP (ꢂꢃ)  
FAN3100
׏
፻ᰝਾŔ֬ꢃᬣᩣͅn
׬
Lj᏶֭Lj  
ᰁჯļ✄̡ൾឝꢆꢇşѿୢ᥼ꢆꢇꢉꢇͅ  
ֿधᤊϹͥúȯਾᩣֿͅÅƟϚֿᒩꢄ  
ꢀၓÅƽᓡѿ╧ MOSFET 。  
FAN3100 ✈ៀჵএ⑀∲2 × 2 mm 6 ෡ៀꢈ  
(MLP)Åᣠ෯ŔบෘᖰϚŔ⋍ሇ்,✈࿅᧧Φ5 ჵ  
SOT23 。  
1
2
3
5
VDD  
GND  
OUT  
IN+  
4
IN*  
Features  
SOT235 (ꢂꢃ)  
ꢄ  
3 A ∬ꢀἡ/⁰ꢀἡV =12 V  
DD  
4.5 А 18 V ļ
 
MARKING DIAGRAM  
2.5 A ∬ꢀἡ/1.8 A ⁰ꢀἡV  
= 6 V  
OUT  
֬ꢃᬣᬋᩡᩣ̡ͅᚈꢃꢄşѿ்ᰝਾ
׬
Lj᏶֭Lj  
ͅ៖ͥ₽ꢀ҈
 
100X M G  
1 nF ៯ᩍ͘५ԧ៖13 ns͘५9 ns  
׏
TTL CMOS ͅꢃ  
G
MillerDriveᑠᤏ  
ꢃꢄᩣͅ⛻ԧ͘५Āᚍზn20 ns  
6 2x2 mm MLP 5 SOT23 ᎕  
ൺ▏੣ꢁႆ40°C А 125°C  
These Devices are PbFree and Halogen Free  
Applications  
100X = Specific Device Code  
X = T or C  
M
= Date Code  
G
= PbFree Package  
(Note: Microdot may be in either location)  
ꢋ  
ꢀ⁰  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 17 of  
this data sheet.  
MOSFET ꢁ  
׬
ᵅ᝔ἡꢀᢿ  
DCDC
 
ꢀᤚᖇЖ  
© Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
October, 2022 Rev. 5  
FAN3100TCN/D  
FAN3100T, FAN3100C  
ꢌꢊ(ꢄꢅ 1)  
Q
JL  
Q
JT  
Q
JA  
Y
JB  
Y
JT  
(ꢈꢉ 2)  
(ꢈꢉ 3)  
(ꢈꢉ 4)  
(ꢈꢉ 5)  
(ꢈꢉ 6)  
ꢍ  
ꢀꢇ  
°C/W  
°C/W  
6 ꢀꢁ, 2x2 mm ꢆꢇꢈꢉꢊꢋ (MLP)  
SOT235  
2.7  
133  
99  
58  
2.8  
42  
5
56  
157  
51  
1. ꢁꢍꢎꢏꢆꢐꢑꢒ;ꢑℕꢂꢄꢅꢃꢑℕၴ✈。  
2. Theta_JL (Q ): Ԫij
ণ٬ᐠᣩꢀএ(
ӥÛĵᝃꢏ⋪ƨ)Ŕၵጸ∲+⃄Ŕꢏℋ,᪩{ꢀএ᫪ဘ⋪ᖅА PCB ⛺。  
JL  
3. Theta_JT (Q ): Ԫij
ণ٬ꢊꢋ
ጸ∲+⃄Ŕꢏℋ,ȧᚎꢊꢋ᫪᪗⍆ƇŔᝃꢏ␧ƽᓡईযꢓႆ。  
JT  
4. Theta_JA (Q ):
ণ٬▏੣
+⃄Ŕꢏℋ,ꢄꢅꢃ PCB ᚎꢌ
ᝃꢏ٬ᷴἡ
঩ൺ᫒✈ẁᣩᝃꢏ
Ŕꢎ⌖ෙἡ、ş2S2P ᥟ,ୢ  
JA  
JEDEC Φ JESD512, JESD515
٬
 JESD517 ᐠᫀᒔൺ(ୢ᫒✈)。  
5. Psi_JB (Y ): ⑙ሇ֢,ጸЊईꢄꢅ 4 )Ŕꢏ▏੣Ԫij✈ꢔᢿᥟ֢+ŔLj͓MLP6  
JB  
ꢊꢋ,ꢔᢿᥟ֢૓፻ൺ)ꢇ⛾ᝃꢏ⋪ƨLj᪮ᖅ、®ꢊꢋŔÛֿზĘϚŔPCB ᑖᾬSOT235 ꢊꢋ,ꢔᢿᥟ֢૓ൺ)ꢇ⛾ꢀꢁ  
2LjᮋŔ pcb ᑖᾬ。  
6. Psi_JT (Y ): ꢏ⑙ሇ֢ᝐ,ጸЊईꢄꢅ 4 )Ŕꢏ▏੣⛻Ԫijণꢓꢊꢋ⍆᮸+⃄ŔLj͓。  
JT  
ꢉꢊ  
SOT23  
ꢎꢏꢋ  
MLP  
ꢎꢏꢋ  
ꢐ  
VDD  
AGND  
GND  
IN+  
ꢎꢑꢒ  
1
3
2
ꢔ⁰ꢔիֿIC ŔŻꢔꢔ⁰。  
ꢆꢐऐ,✈ͅǁ
ח
¥MLP ꢊꢋ)᪮ᖅೃ IC ∲Ŕ PGND。  
(¥SOT23 ꢊꢋ) ͅ⛾ϚꢔᢿŔ֢͌͑૓ऐ。  
֭
ױ
ͅ。⛾ VDD ᪮ᖅ៖ş்ᩣϚ。  
2
3
4
5
1
6
IN−  
֭Ljᩣͅ。᪮ᖅೃ AGND ᏶ ,Åş்ᩣϚ。  
4
OUT  
P1  
᧥ᥡ╁҈ϚƽĮꢔꢕ,ꢖ∮ᐠꢗꢘŔᩣͅϚꢙ,V  
UVLO ꢂ。  
DD  
Pad  
5
ᝃꢏƨֿ(¥MLP ꢊꢋ)ꢊꢋၵ᮸ꢜꢝŔꢞꢟ,ꢔᷴ᪮ᖅೃꢀꢁ 5。  
ꢔ⁰ᖅऐ(¥MLP ꢊꢋ)Ϛ҈ꢔᢿ,ꢠꢡ͓ꢢꢣͅϦ。  
PGND  
ꢔꢕ  
IN+  
IN−  
OUT  
0 (ꢄꢅ 7)  
0
0
0
1
0
0 (ꢄꢅ 7)  
1 (ꢄꢅ 7)  
0
1
1
1 (ꢄꢅ 7)  
7. ୢꢤẁᣩꢥ᮸ᖅএ៖Ŕꢦꢧᩣͅǁ
ח
。  
www.onsemi.cn  
2
 
FAN3100T, FAN3100C  
ꢎ  
1
VDD  
UVLO  
V
DD_OK  
100 kW  
IN+  
3
5
OUT  
100 kW  
100 kW  
IN−  
4
2
GND  
 1. ꢗꢘꢖSOT23 ꢎᰝਾ)  
3
VDD  
UVLO  
V
DD_OK  
100 kW  
IN+  
1
4
OUT  
100 kW  
100 kW  
IN−  
6
2
AGND  
5
PGND  
0.4 W  
 2. ꢗꢘꢖMLP ꢎᰝਾ)  
www.onsemi.cn  
3
 
FAN3100T, FAN3100C  
׶
ꢋ  
ᝐ  
ꢐꢑ  
0.3  
ᝐ  
ꢀꢇ  
V
V
DD  
VDD GND  
20.0  
V
GND 0.3  
GND 0.3  
GND 2  
V
DD  
V
DD  
V
DD  
+ 0.3  
V
IN+
٬
 INto GND, AGND PGND ի  
OUT GND, AGND PGND ի  
IN  
V
OUT  
+ 0.3  
+ 0.3  
V
Ϛֿ(OUT) АꢈGNDAGNDꢈPGNDŔꢨꢩꢔիꢈ(T  
(ꢄꢅ 8)  
< 300 ns)  
V
PULSE  
T
ꢀꢁ⋪ᖅꢓႆ (10 )  
ণꢓ  
+260  
°C  
°C  
°C  
L
T
55  
65  
+150  
+150  
J
T
ʈꢓႆ  
STG  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
(֢૓ꢬꢭ)  
ୢꢤꢔիꢮ᪗ꢯꢰꢱൺꢆϷϚŔꢲꢳ,
Öꢴ்úꢵꢶୢꢤꢮ᪗Ûĵ{,ꢠꢈꢷƽ
Öѿ்,ꢴ்úොꢹ
Öꢵꢶ,ꢺꢻ  
ꢴꢼሇ。  
8. ꢽᝃꢏ℠Ж(< Max T )  
J
ᖈภꢒꢓꢔ  
׶
ꢋ  
ᝐ  
ꢐꢑ  
4.5  
ᝐ  
ꢀꢇ  
V
V
DD  
ꢔ⁰ꢔիꢲꢳ  
18.0  
0
V
V
V
ͅի IN+IN−  
ļ▏੣ꢓႆ  
DD  
IN  
T
40  
+125  
°C  
A
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond  
the Recommended Operating Ranges limits may affect device reliability.  
(֢૓ꢬꢭ)  
ꢿꣀꣁļꢲꢳጸꣂϷի៖,⛽ƽꢸ்ꣃ꣄ဘꣅ꣆꣇៖⃄ईꢿꣀꣁļꢲꢳጸꣂᒔൺꢲꢳÅꢥŔꢔի⛻ꣅ꣆,ꢴ்úꢺꢻ
ÖŔ  
ꢴꢼሇ。  
ꢙᷴꢊ(ꢖ∮꣈ᣩꢄꢅ,V = 12 V T = 405°C +125°Cꢔἡᾑ
Ö)ꢇ,ἡϚꢇꢂ。)  
DD  
J
׶
ꢋ  
ᝐ  
ꢒꢓꢔ  
ꢐꢑ ꢕꢖꢑ ꢗꢑ  
ꢀꢇ  
ꢙ⁰  
V
I
ļꢲꢳ  
4.5  
18.0  
0.35  
0.80  
4.3  
V
mA  
mA  
V
DD  
ꢔ⁰ꢔἡᩣֿͅ/EN ꣊᪮ᖅ  
FAN3100C (ꢄꢅ 9)  
0.20  
0.50  
3.9  
DD  
FAN3100T  
V
ON  
ො᫪ꢔի  
͓꣋ꢔի  
3.5  
3.3  
V
OFF  
3.7  
4.1  
V
(FAN3100T)  
V
IN+IN꣌꣍Įի,ꢯꢰꢂ  
0.8  
V
V
INL_T  
INH_T  
V
IN+IN꣌꣍ꢚꢔի,ꢯ꣎ꢂ  
꣏Ljᩣͅ  
2.0  
175  
1
I
IN ® 0 V  
IN ® 0 V  
1  
175  
0.2  
mA  
mA  
V
IN+  
DD  
I
֭
ױ
ͅ  
IN  
DD  
V
IN+IN꣌꣍꣐꣑ꢔի  
0.4  
0.8  
HYS  
(FAN3100C)  
V
IN+IN꣌꣍Įի  
IN+IN꣌꣍ꢚꢔի  
IN ꢔἡ,Įꢔꢕ  
30  
%V  
%V  
INL_C  
INH_C  
DD  
V
70  
175  
1
DD  
I
IN ® 0 V  
IN ® 0 V  
1  
mA  
mA  
%V  
INL  
DD  
I
IN ꢔἡ,ꢚꢔꢕ  
175  
INH  
DD  
V
IN+IN꣌꣍꣐꣑ꢔի  
17  
HYS_C  
DD  
www.onsemi.cn  
4
 
FAN3100T, FAN3100C  
ꢙᷴꢊ(ꢖ∮꣈ᣩꢄꢅ,V = 12 V T = 405°C +125°Cꢔἡᾑ
Ö)ꢇ,ἡϚꢇꢂ。)  
DD  
J
׶
ꢋ  
ᝐ  
ꢒꢓꢔ  
ꢐꢑ ꢕꢖꢑ ꢗꢑ  
ꢀꢇ  
ꢍ  
I
OUT ꢔἡ,ꢆի,꣒ꢔἡ (ꢄꢅ 10)  
OUT ꢔἡ,ꢆի,⁰ꢔἡ (ꢄꢅ 10)  
OUT at V /2, C  
= 0.1 mF,  
= 0.1 mF,  
2.5  
A
A
SINK  
DD  
LOAD  
f = 1 kHz  
I
OUT at V /2, C  
1.8  
SOURCE  
DD  
LOAD  
f = 1 kHz  
I
OUT ꢔἡ,꣓,꣒ꢔἡ (ꢄꢅ 10)  
OUT ꢔἡ,꣓,⁰ꢔἡ (ꢄꢅ 10)  
Ϛ⛺ԧ៖⃄ (ꢄꢅ 11)  
C
C
C
C
= 0.1 mF, f = 1kHz  
= 0.1 mF, f = 1 kHz  
= 1000 pF  
3
A
A
PK_SINK  
LOAD  
LOAD  
LOAD  
I
3  
PK_SOURCE  
t
13  
9
20  
14  
28  
30  
ns  
ns  
ns  
ns  
mA  
RISE  
t
Ϛ⛻꣔៖⃄ (ꢄꢅ 11)  
= 1000 pF  
FALL  
LOAD  
t
t
, t  
D1 D2  
Ϛū ზ꣖, CMOS ͅ(ꢄꢅ 11)  
Ϛū ზ꣖, TTL ͅ(ꢄꢅ 11)  
Ϛ֭
ױ
꣙ꢽꢔἡ (ꢄꢅ 10)  
012 V , 1 V/ns ի꣗꣘  
7
9
15  
16  
500  
IN  
, t  
D1 D2  
05 V , 1 V/ns ի꣗꣘  
IN  
I
RVS  
9. ꢔ⁰ꢔἡ꣚Į,꣛ꢇ TTL ꢔᢿ꣜ꢃñ꣝꣞꣟。  
10. ꣊꣠꣡‡꣢꣣。  
11. ֢꣥ꢃ 3
٬ꢃ
 4 Ŕ៖꣦ꢃ。  
90%  
90%  
Output  
Output  
10%  
10%  
V
INH  
V
INH  
Input  
Input  
V
INL  
V
INL  
t
D1  
t
D2  
t
D1  
t
D2  
t
t
FALL  
RISE  
t
t
RISE  
FALL  
 3. ꢙLj  
 4. ꢚLj  
www.onsemi.cn  
5
 
FAN3100T, FAN3100C  
ꢕꢖꢄ்ꢊꢛ  
(ꢖ∮꣈ᣩꢄꢅ,꣧͘⑙ሇ꣨Ö25°C V = 12 V )  
DD  
 5. IDD(∩ꢙ⁰ꢙիŔ͓
ߋ
 
 6. IDD (∩ꢙ⁰ꢙիŔ͓
ߋ
 
 8. IDD (ៀ៯ᩍ)⍡╧Ŕ͓
ߋ
 
 10. IDD (1 nF ៯ᩍ)⍡╧Ŕ͓
ߋ
 
 7. IDD (ៀ៯ᩍ)⍡╧Ŕ͓
ߋ
 
 9. IDD (1 nF ៯ᩍ)⍡╧Ŕ͓
ߋ
 
www.onsemi.cn  
6
 
FAN3100T, FAN3100C  
 12. IDD (∩Ŕ͓
ߋ
 
 11. IDD (∩Ŕ͓
ߋ
 
 13. ꢑꢝꢙ⁰ꢙիŔ͓
ߋ
 
 14. ꢑꢝꢙ⁰ꢙիŔ͓
ߋ
 
 15. % ꢙ⁰ꢙիŔ͓
ߋ
 
www.onsemi.cn  
7
 
FAN3100T, FAN3100C  
 17. TTL ꢑꢝŔ͓
ߋ
 
 16. CMOS ꢑꢝŔ͓
ߋ
 
 19. UVLO
Ŕ͓
ߋ
 
 18. UVLO ꢑꢝŔ͓
ߋ
 
 20. Āꢙ⁰ꢙի  
 21. Āꢙ⁰ꢙի  
www.onsemi.cn  
8
FAN3100T, FAN3100C  
 23. Āꢙ⁰ꢙի  
 22. Āꢙ⁰ꢙի  
 25. ĀŔ͓
ߋ
 
 24. ĀŔ͓
ߋ
 
 26. ĀŔ͓
ߋ
 
 27. ĀŔ͓
ߋ
 
www.onsemi.cn  
9
FAN3100T, FAN3100C  
 29. ⛺ԧ៖⃄ꢙ⁰ꢙիŔ͓
ߋ
 
 28. ĀŔ͓
ߋ
 
 30.
⛺ԧ٬⛻
ℝ៖⃄Ŕ͓
ߋ
 
 32. ⛺ԧ/⛻ℝỂ10 nF ៯ᩍ  
 31. ⛺ԧ/⛻ℝỂ1 nF ៯ᩍ  
www.onsemi.cn  
10  
FAN3100T, FAN3100C  
 34. VDD = 12 V ៖ŔΦꢜꢙꢛỂᅂ  
 33. VDD = 12 V ៖ŔΦ⁰ꢙꢛỂᅂ  
 36. VDD = 8 V ៖ŔΦꢜꢙꢛỂᅂ  
 35. VDD = 8 V ៖ŔΦ⁰ꢙꢛỂᅂ  
V
DD  
4.7 mF  
Ceramic  
470 mF  
Al. El.  
Current Probe  
LECROY AP015  
I
OUT  
IN  
1 kHz  
1 mF  
Ceramic  
V
OUT  
C
LOAD  
1 mF  
 37. ΦIOUT/VOUT ꢝꢞꢙꢟ  
www.onsemi.cn  
11  
FAN3100T, FAN3100C  
ꢞꢟ  
ꢑ  
V
DD  
FAN3100 ꢂꢈTTL CMOS ͅꢃ。ई  
FAN3100T ,ᩣͅ
ר׶
᧧ΦTTL ᬋᩡ⃘  
,ᚵ⃘ꢃ⛽ŽnꢈV ꢀի
׊
ᣩଇ0.4 VŔ  
DD  
ꢀի{ꢀၓ඙ᚈᩣֿͅ
ͅᬋᩡǁ  
ח
ꢀၓᐠ҈nꢈ2 VŔꢀիᐭ்፻̾ᬋᩡꢇ  
ꢀၓTTLͅŔ҈ǁ
ח
ၴᣩᇋ
ԧ٬
,  
իᘦ╧6 V/ms ᏶ᣔᇋ,᪩®ꢈ0А3.3 VŔԧ៖ꢅ  
ꢀꢈ550 ns᏶ᣔ෯
úො  
ೄꢀ҈ꢀիᡕꢄ
ꢀիၖͭᴁֱ҈
ͅ,  
ļ⛽ԃൺ。  
Input  
stage  
V
OUT  
FAN3100C ,ᬋᩡᩣͅꢃŽnꢈV ꢀၓ,  
DD  
V ꢈꢀꢈ12 V,ᬋᩡԧẟꢀꢈV Ŕꢈ  
DD  
DDꢈ  
55%,ᩣͅ⛻ꢀꢈV Ŕ38%CMOSͅ  
DD  
ᰝਾꢂfꢆꢇꢀꢈ17% V ଇ෯Ŕ₾
ꢀիୢ᥼  
DD  
 38. MillerDrivet ᩣϚণᥤ  
ߋ
যꢁꢂᅷАി
ר
٬ឡ
ᑠᤏ,்૿
 
ૐ̄यͅꢀի₾
է
׃
ϹCMOSͅ
׏
şፂ  
ŔDŽἡᨗฑ඙ᚈꢃꢄᛓ൒ĭnᖇЖ  
ǁ
ח
٬
҈
ꢈINꢈ+ŔꢆꢇꢈRCᢿ,
ގ
̾ꢁਾ  
ൺ៖ꢅꢆ҈
ꢈINꢈŔፂԧẟ෦ईᖇЖ  
ǁ
ח
٬
҈
Ϛჵ+ͅfꢆꢇზ៖。  
իꢉ  
FAN3100؏҈ᬋᩡটꢄøӶ
׏
Љ✈ᴀիꢈ  
(UVLO) ѿ்ꢀ҈֢⊙ᖅऐŔꢈNꢈṿMOSFETÅ  
̾ƽꢈICᣩၯऐ؏҈V n⛺ԧĦ᠏࿅  
DD  
ꢙ⁰ꢙꢛ  
ļꢀիꢄnꢈ3.9 VƽϚꢀꢄꢀၓַ  
ͅ⒖ᇡŔᅑ
ڭ
Ö↠Ἓ
׮
Öꢁ  
I (∩͘५ሇ
֢
5ꢈ-ꢈ
ꢈ6ꢈ
٬  
DD  
ꢈ11-ꢈ
ꢈ12Ểᅂᣒ᠏ईᐠᣩֿͅ὎ਾ(ᩣ  
+Эꢀ⁰ꢀիᆥ⍋ᢜ།0.2 VꢄꢈV ꢀ⁰ꢀի  
DD  
ѿ╧ϧᕂ‡
,ᚵ
ᣩЉnᵂᑶ҈。  
ϚꢀꢄꢀၓŔ᥁Ö⛻‡⛿Ŕ᠞Њfᚥᰝਾ∩  
I ꢀἡŔᣠ෯ꢃ。n͖¶⒖ᇡꢄᩣͅ
ֿ٬  
ҝᰝਾn҈ƇꢈPṿMOSFETꢈ⛽
 
DD  
Ϛֿ100 kŔҀꢀἡୢᨦ
ᐠЊ  
҈
ŔϚꢀիúV ꢄnꢈ3.9 V ៖ොP  
DD  
֢
1ꢈ-ꢈ
ꢈ2{እΕ,∩I ꢀἡ  
ṿMOSFET 。  
DD  
Ŕൾꢃꢀꢃ⛾Ҁꢀἡ+
٬
。  
VDD ꢢꢟꢙꢡ  
şIC ᪕᫯ꢀ⁰
ÖV
٬
GND  
+ꢅ᪮ꢆꢇŔꢇ⍡ꢀ඙C  
ESR
٬
ESL),͗ᣩᣠʽ࿣এ⁏ᵄꢀ඙᠏  
10 mFА47 mFଇ඙ꢀ඙
Ŕ̥n҈  
٬ᖇЖ
ȯ⛺。  
MillerDrivet ᧥ᥡ╁҈ᑠᤏ  
DD  
FAN3100ŔϚ͗ᣩୢ
ꢈ38ꢈꢅᐠЊŔMillerDrive  
ᦖᥤ,ণ
ר
f֬ᥡሇ
Ö
٬
MOS
Ö,்૿ईଇී  
ꢀ⁰ꢀի٬ꢁႆָӶ
ଇꢀἡϚꢈ  
͗ᣩꢄ  
BYP  
1/3
٬
2/3 V ꢈ+ᘦ҈៖֬ᥡሇ
Ö૿ᑟᩍᩓଇ  
DD  
ꢀἡMOSꢈ
ÖϚА᏶ᒩꢄ。  
C ꢈꢃŔ͘५᥁ÖƽV ꢀ⁰ŔỂ  
BYP  
DD  
MillerDriveŔ✈᠏Ҁ҈ļꢈ͖տ◦ई  
MOSFETŔ᧥ᥡ⃯ᥡꢀ඙̥ꢀ᏶᜞ꢀ៖ļꢀො  
/ꢁӛŔϦ),Miller
א
ᣠ  
ꢀἡnꢈMOSFETឍ᣿ꢅ⇐ᑑ⇆ꢀիϧ  
ᕂѿŔၴ✈૜ᓐ,Փş݃Ҳၓ
א
⛽úϚ▐,ꢀ҈
 
?૿ӛᖰ૿Ŕ໐ꢀἡҝ  
እΕဘဘϚ▐ई
׬
ᵅ᝔ἡ
Ŕၴ✈
ꢀijl
ٱ
 
ဘई MOSFET +Эฑ࿒。  
ꢀի5%᪩ꢃş20ꢈǭؙ៯ᩍꢀ඙ꢈC ꢈŔꢃ  
EQV  
ൾ▐ईᵄൺ)ꢀꢈQgate/V 0.1 mF Аꢈ  
DD  
1 mF ᏶ᣔଇŔ⛗ꢀ඙
Ì᠏ꢀ«៸(ūୢ  
X5R
٬
X7R),͗ᣩി
ଢ଼Ŕꢁႆ⑙ሇ٬
ꢇꢈΒꢀἡ்  
ѻ。  
ୢ᥼ꢀ
ૐᅑ
ڭ
fᵃဘ᪠ጜ,C ꢈꢃ
׏
ꢇೃꢈ  
BYP  
C Ŕ50100ꢈǭC Ϧꢀꢉꢇꢀ඙。͖  
EQV  
BYP  
ꢅꢆꢇଇŔnؙ៯ᩍꢀ඙),
׆
ꢆꢇ  
ŔϹ110 nF),ईҋVDD
٬
GNDꢈ  
ŔऐយÅꢀἡΒŔᣔꢇ⍡᮸Ϧ。  
www.onsemi.cn  
12  
 
FAN3100T, FAN3100C  
ꢥꢦꢣꢡ  
MOSFETŔ⁰ᥡ。ꢀfൾ▐ᇋ,ꢃᢿŔꢀℋ  
٬ꢀዿၴ
ᣠ෯Ӷ。  
FAN3100 
؋
ᣩᇋ֭ၴͅʽĀᚍზ᪯,Å  
֪૿ᖰꢀἡ໐nꢈ2 AŔϚॷ,ᣩЉnꢀի  
ᕂ៖®ꢄnꢈ10 nsАᡕꢄ100 nsᄚ⊨ᖈᫀ  
ᖅᓧԷ:  
V
DS  
V
DD  
şꢀἡ
Ϛ٬ꢀ⁰ᖅऐ
ᬋᩡᩣͅǁ
ח
٬
ǁ  
ח
ᖅऐᅤϦҋई૤◦TTLꢀၓᬋᩡ⃘៖⑙  
Ћ。  
C
BYP  
FAN3100  
ƽ҈
׏
∰᪡៯ᩍ,ÅşଇꢀἡොŔ  
ႆᣠ෯Ӷ
׏
ί෱ꢀዿꢇꢇ᫯ꢁ  
ѿ்,
׬
៖ί෱
ױ׏
҈
ͅ
٬
͖¶
ࣔو
ᢿ᩠  
EMI Ŕ▏ᢿ∲ҿ。  
PWM  
FAN3100 
׏
ҝ෡᎕,௪ᰝਾӝᣩ
׬
Ħ  
ŔሇLjĜ。6ꢈMLPꢈ2ͥ  
᮸᪮ೃᩣͅᰁᒿऐၖၴᚵꢃꢄꢈICꢈ⛻Ŕʽ  
ᅤDŽ᪮ೃꢀ⁰ᖅऐՓჵ55SOT23ꢈ  
ͥ
ᰁᒿ٬ꢀ⁰ऐ
ᖅ៖ꢃꢄϦრŔԵⓌŔ  
⋪ᖅএ᪮2Ŕļ
ꢀ⁰٬ᖇЖ
ǁ
ח
 
Ŕᡎᖅऐ⊙。  
 40. MOSFET ͓ꢧŔꢙꢛꢟꢤ  
ꢔꢕꢨꢪ  
FAN3100 ǯ᠞Њf֬ͅᰝਾŔ࿅ļ⒖ᇡ。  
׬
Lj҈
ᰝਾINᬋᩡꢀၓඵ  
INᬋᩡꢇꢀၓú
Öѿё✈,૜✄  
҈
ŔϚማ᠏ƽꢀၓַIN+⒖ᇡŔ  
ڭ
。  
ꢇ᫯ѿ╧ꢀᢿᯍ඙៳ַ
ૐŔᅑ
ڭ
೼  
಺᥻ᩣϚ᏶͖ൣ૶
׏
ೄᩣ  
Ϛֱͭୢ᥼ईᰁᒿᥟ᏶œ࿣ภ͗ᣩ  
⁏ᩣͅ、؏✈᏶Ϛჵএ)ᢿ,᪩{
ڭ
 
ú⑙Ћ᠞。ꢀfᅷᣠœᜨ᥼௪᪮এᡚʽᡚ  
DŽᖅ。  
1. FAN3100 ꢪ  
IN+  
0
IN−  
0
OUT  
ၴᣠ෯Ӷො
٬
ឍꢀἡÅ⛻ְ。  
ꢈ39ꢈ᠞ЊfꢈMOSFET៖ŔΒ᧥ᥡ҈ꢀἡ  
ꢃᢿ,ꢀ҈
᧥ᥡ̥
׏
MOSFETꢀἡ  
ꢂภꢀ඙C ꢈ‡টꢀ҈
АMOSFETꢈ  
BYP  
᧥ᥡͭАऐ。ꢀf
׏
ऐൾ▐ꢀἡ,ꢃᢿ  
0
0
1
0
0
1
1
0
1
1
Ŕꢀ
٬ꢀዿၴ
ᣠ෯Ӷꢀ඙C ई  
BYP  
҈
MOSFETŔļ✈᠏ؘ᜖ꢀἡΒ  
,ℂ͖ၒᑐ PWM ᖇЖ
Ŕᜯዿᰁᒿꢀ。  
ꢈ41ꢈꢅᐠЊŔ
׬
Lj҈
ᰝਾINऐLj  
᪮,IN+૶ᖅͅǁ
ח
(PWM)INᬋᩡ  
ꢀၓ៖,ꢀ҈
ё✈Ϛꢀၓַ  
IN+ ⒖ᇡŔᅑ
ڭ
。  
V
DD  
V
DS  
C
BYP  
VDD  
IN+  
FAN3100  
PWM  
OUT  
FAN 3100  
PWM  
IN−  
GND  
 39. MOSFET ꢀŔꢙꢛꢟꢤ  
 41. ꢥ்ŔꢂꢃLjᰝਾ  
ꢈ40ꢈ᠞ЊfꢈMOSFETꢈꢁឍ៖Ŕꢀἡꢃᢿ◦ዓ  
,ꢃꢄꢆꢇ෯Ŕ▏ᢿ,ꢀ҈
DŽᖅ෦ꢀἡϦἡА  
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13  
 
FAN3100T, FAN3100C  
ꢈ42ꢈꢅᐠЊŔ֭Lj҈
ၴ✈IN+ꢀ  
。ꢈIN+ꢈ⛾ꢈGNDLjϚꢀၓַIN௪  
⒖ᇡŔᅑ
ڭ
。  
Turnon Threshold  
V
DD  
IN−  
VDD  
IN+  
(V  
DD  
)
OUT  
IN+  
FAN3100  
PWM  
IN−  
GND  
OUT  
 42. ꢥ்ŔꢂꢃLjᰝਾ  
 44. ꢚLjꢧꢂᅂ  
ꢒꢓᅂ  
ꢌꢣꢡ  
ꢀ៖,ꢀ҈
ŔϚƽꢀၓDŽАV ꢀի  
DD  
᧥ᥡ҈
҈ꢇ⍡╧რꢁꢈMOSFET
٬
IGBT,  
ú‡⛿᠞Ŕѿईၴ✈ᲝᑑŔ᠏̾ൺ᧥ᥡꢀ  
҈
Ŕѿ֪͖Ŕ̾ƽ
Ö
׏
ᖅַŔꢁ  
ͥ࿅ļ。  
Аොꢃ⃘ꢃ。ϚΒꢀἡဥȐV Ŕԧ૜  
DD  
ԧDŽАV Аԃᇡ
43ꢈꢅūЊŔ
׬
Lj᪠ጜ  
DD  
fϚֿƽᓡईꢀၓDŽААUVLO,  
׮
Ϛͅ
׬
Lj。  
᧥ᥡ҈
Ŕማѿꢀꢉ̣ÖꢈP  
٬
P  
GATE  
DYNAMIC  
+
٬
:  
V
DD  
PTOTAL + PGATE ) PDYNAMIC  
(eq. 1)  
Turnon Threshold  
᧥ᥡ҈ᔿ૧:ֱ⛿ईᖰ᧥ᥡꢀἡᓩ⍇რ⍡  
҈៯ᩍMOSFETŔӛŔѿ҈  
MOSFETŔѿÅ⛻យჯ̾ൺꢈ͖ꢅ  
IN−  
MOSFETnᓧൺ᧥ᥡ-⁰ꢀիV ဆᣩ᧥ᥡꢀꢈ  
GS  
Q Å֪૤nf  
IN+  
G
SW  
PGATE + QG @ VGS @ fSW  
(eq. 2)  
҈ᇡ⍔ꢀ҈ꢈ/ꢈDŽꢀἡई҈ᇡ࿅ļÖ⛻ӥᓌ  
/⛻ᒩꢀℋ),nͥꢀἡὨŔѿ
׏
 
OUT  
ई͘५ሇ⑙ሇϦ®ꢈI ៯ᩍ)╧Ŕ
 
DD  
 43. ꢙLjꢧꢂᅂ  
ງ,®̾ൺൾļÖ⛻®ꢈV ᅷАŔꢀἡ  
DD  
I
DYNAMIC  
PDYNAMIC + IDYNAMIC @ VDD  
(eq. 3)  
n
 42 Ŕ֭Ljᰝਾ,؏҈Ểᅂୢ
 44 ᐠЊᄳ  
INꢌꢈ⛾ꢈVDDLj✄ꢈINꢈ⛾ͅǁ
ח
Lj,ᩣϚΒ  
֭ͅLj。⛺ꢀ៖֭LjϚֿƽꢀၓDŽА  
V
DD  
ꢀիАොꢃ⃘͖
׮
ͅƽᓡ֭Lj。  
www.onsemi.cn  
14  
 
FAN3100T, FAN3100C  
PDYNAMIC + 8mA @ 10V + 0.080W  
PTOTAL + 0.24W  
ំ̾ൺf҈
Ŕѿ૧,LjෙꢀᥟŔ҈
ণ  
Ŕꢁԧ
׏
ÅÅ⛻͌᪫ጜĐ
٧,᪩Ნ
ȧY  
᠏Ϛnꢆꢇ
݋
ĜŔ⋍ꢁꢂ(
ᝃ⋍٬ᷴἡ
)૜̾ൺ:  
(eq. 6)  
(eq. 7)  
JB  
5 SOT23 ͗ᣩꢆꢇАჵ⋍⑙ሇ֢ᝐ  
Y = 51°C/W。  
JB  
TJ + PTOTAL @ YJB ) TB  
(eq. 4)  
͖ꢅ:  
T
ꢆꢇ
ߋ
ၴ✈
Ö
ࣔو
Ŕภꢁႆַꢀᥟ  
٬
PCBᥤ֪͖ጸ∲ᷴἡŔᅑ
ڭ
。ꢀ̾ƽ
׏
∰᪠ጜ,  
⍋ℂ
ÖŔᣠଇᡕꢄ150°CŔᣠଇ;  
= ҈
ꢁ  
J
Y
JB  
Lj)  
= (psi)ꢀ⋍⑙ሇ֢ᝐ
ꢁԧ٬ማѿ
૧  
80%ℝ⍭T Жꢀꢈ120°CᲝਾយӛჯ4̾ൺᐠ  
J
ŔꢀᥟꢁႆÅƽꢄn 120°C:  
T
B
ᥟꢁႆ  
= ⋍⑙ᅡ)ጸ)Ŕĭ૤Ŕ  
TB,MAX + TJ * PTOTAL @ YJB  
(eq. 8)  
(eq. 9)  
TB,MAX + 120°C * 0.24W @ 51°CńW + 108°C  
48 V ͅŔ͘५ᵃ
ױ
ၴ✈ꢅ  
ļꢀᩓ,෦ЭūꢅŔ5SOT23ᣟᕂꢀꢈ  
ꢈ49ꢈᐠЊ),FDS2672ꢈꢀꢆꢇℼईŔMOSFETꢈ  
V =ꢈV =ꢈ10 V ͘५᧥ᥡꢀꢀꢈ32 nC。  
6 MLP᎕,Y = 2.8°C/W6 ꢈMLPꢈ
׏
 
JB  
GS  
DD  
119°C ŔPCBꢁႆ⛻ƽꢄnꢈ120°C᪩ጸ៮  
⑉◦บෘᣔ෯ŔMLP ᎕,͖ᝃ⋍⋪ƨꢂfᣔᣩ  
ᜨŔ⋍ĀÅὨᝃ҈
Ŕ⋍૓ꢉАईί෯ꢀᢿ  
ijบෘꢁᖰ
׏
+Ϛ。  
ᄳई500 kHz⛻şTTLͅ҈
᝔  
ijѿ
׏
ꢂ٧
:  
PGATE + 32nC @ 10V @ 500kHz + 0.160W  
(eq. 5)  
www.onsemi.cn  
15  
FAN3100T, FAN3100C  
ꢕꢖꢅꢋꢙꢟꢎ  
V
IN  
ENABLE  
Active LOW  
FAN3100  
IN−  
IN+  
AGND  
PWM  
VDD  
6
5
4
1
2
3
PGND  
OUT  
 45. ꢬꢭꢮꢯꢅꢆꢇMLP ꢰ)  
Q1  
V
IN  
T2  
T1  
D1  
V
DD  
V
SEC  
D2  
FAN3100  
PWM  
Q2  
CC  
0.1 μF  
 46. ꢦꢲꢫꢬꢭꢅꢆꢭիꢃŔꢇꢂꢃ  
V
IN  
Q1  
T1  
L
V
OUT  
D1  
Q5  
V
SEC  
PWM  
Control/  
Isolation  
D2  
Q2  
Q3  
SR  
V
DRV  
ISOLATION  
FAN3100  
 47. ꢳꢮꢴꢵꢛꢇꢂꢃ  
V
DD  
R
FAN3100C  
OUT  
IN  
C
Delay  
IN  
OUT  
 48. ꢶꢋ CMOS Ŕꢏꢷ៖  
www.onsemi.cn  
16  
FAN3100T, FAN3100C  
ꢸꢹꢞꢟ  
ꢍꢺꢻ  
ꢃꢔꢋ  
ꢑ  
ꢍ  
FAN3100CMPX  
FAN3100CSX  
FAN3100TMPX  
FAN3100TSX  
CMOS  
CMOS  
TTL  
6 ꢀꢁ, 2x2 mm MLP ꢊꢋ  
5 ꢀꢁ SOT23  
3,000 / Tape & Reel  
3,000 / Tape & Reel  
3,000 / Tape & Reel  
3,000 / Tape & Reel  
6 ꢀꢁ, 2x2 mm MLP ꢊꢋ  
5 ꢀꢁ SOT23  
TTL  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
2. Lj͓ꢰꢱ  
ꢅꢆꢇꢂ  
(ꢈꢉ 12)  
(Sink/Src)  
ꢃꢔꢋ  
FAN3100T  
FAN3100C  
ꢖ  
ꢑ  
TTL  
ꢔꢕ  
ꢘ/ꢀŔꢀꢁ  
ꢊꢋ  
2 A  
2 A  
+2.5 A/1.8 A  
+2.5 A/1.8A  
+2.4 A/1.6 A  
+2.4 A/1.6 A  
+2.4 A/1.6 A  
+2.4 A/1.6 A  
+2.4 A/1.6 A  
+2.4 A/1.6 A  
+2.4 A/1.6 A  
+2.4 A/1.6 A  
+4.3 A/2.8 A  
+4.3 A/2.8 A  
+4.3 A/2.8 A  
+4.3 A/2.8 A  
+4.3 A/2.8 A  
+4.3 A/2.8 A  
SOT235, MLP6  
SOT235, MLP6  
SOIC8, MLP8  
SOIC8, MLP8  
SOIC8, MLP8  
SOIC8, MLP8  
SOIC8, MLP8  
SOIC8, MLP8  
SOIC8, MLP8  
SOIC8, MLP8  
SOIC8, MLP8  
SOIC8, MLP8  
SOIC8, MLP8  
SOIC8, MLP8  
SOIC8, MLP8  
SOIC8, MLP8  
CMOS  
CMOS  
TTL  
ꢘ/ꢀŔꢀꢁ  
֭֬Lj᫪꣪ + ֬ş்  
FAN3226C ֬᫪꣪ 2 A  
FAN3226T ֬᫪꣪ 2 A  
FAN3227C ֬᫪꣪ 2 A  
FAN3227T ֬᫪꣪ 2 A  
FAN3228C ֬᫪꣪ 2 A  
FAN3228T ֬᫪꣪ 2 A  
FAN3229C ֬᫪꣪ 2 A  
FAN3229T ֬᫪꣪ 2 A  
֭֬Lj᫪꣪ + ֬ş்  
CMOS  
TTL  
֬꣏Lj᫪꣪ + ֬ş்  
֬꣏Lj᫪꣪ + ֬ş்  
CMOS  
TTL  
֬ͅ/ԵϚŔ֬꣫꣪,ꢀꢁ꣬꣭ 1  
֬ͅ/ԵϚŔ֬꣫꣪,ꢀꢁ꣬꣭ 1  
֬ͅ/ԵϚŔ֬꣫꣪,ꢀꢁ꣬꣭ 2  
֬ͅ/ԵϚŔ֬꣫꣪,ꢀꢁ꣬꣭ 2  
֭֬Lj᫪꣪ + ֬ş்  
CMOS  
TTL  
FAN3223C  
FAN3223T  
FAN3224C  
FAN3224T  
FAN3225C  
FAN3225T  
֬4 A  
֬4 A  
֬4 A  
֬4 A  
֬4 A  
֬4 A  
CMOS  
TTL  
֭֬Lj᫪꣪ + ֬ş்  
CMOS  
TTL  
֬꣏Lj᫪꣪ + ֬ş்  
֬꣏Lj᫪꣪ + ֬ş்  
CMOS  
TTL  
֬ͅ/ԵϚŔ֬᫪꣪  
֬ͅ/ԵϚŔ֬᫪꣪  
12. OUT = 6 V, V = 12 V ៖Ŕ꣧͘ꢔἡ。  
DD  
MillerDrive is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other  
countries.  
www.onsemi.cn  
17  
 
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
WDFN6 2x2, 0.65P  
CASE 511CY  
ISSUE O  
DATE 31 JUL 2016  
0.05  
C
2.0  
A
1.72  
1.68  
2X  
B
4
6
0.15  
2.0  
1.21  
0.90  
2.25  
0.52(6X)  
0.05  
C
1
3
PIN#1 IDENT  
TOP VIEW  
2X  
0.42(6X)  
0.65  
RECOMMENDED  
LAND PATTERN  
0.75 0.05  
0.10  
C
0.20 0.05  
NOTES:  
0.08  
C
SIDE VIEW  
C
0.025 0.025  
A. PACKAGE DOES NOT FULLY CONFORM  
TO JEDEC MO229 REGISTRATION  
SEATING  
PLANE  
B. DIMENSIONS ARE IN MILLIMETERS.  
2.00 0.05  
1.40 0.05  
C. DIMENSIONS AND TOLERANCES PER  
ASME Y14.5M, 2009.  
(0.70)  
D. LAND PATTERN RECOMMENDATION IS  
EXISTING INDUSTRY LAND PATTERN.  
PIN #1 IDENT  
(0.20)4X  
1
3
0.32 0.05  
(6X)  
(0.40)  
0.80 0.05  
(0.60)  
6
4
0.30 0.05  
(6X)  
C
0.65  
0.10  
0.05  
A
B
1.30  
C
BOTTOM VIEW  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13613G  
WDFN6 2X2, 0.65P  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SOT23, 5 Lead  
CASE 527AH  
ISSUE A  
DATE 09 JUN 2021  
q
q
q
q
q
q1  
q2  
GENERIC  
MARKING DIAGRAM*  
XXXM  
XXX = Specific Device Code  
M
= Date Code  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
PbFree indicator, “G” or microdot “G”, may  
or may not be present. Some products may  
not follow the Generic Marking.  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON34320E  
SOT23, 5 LEAD  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. onsemi reserves the right to make changes at any time to any  
products or information herein, without notice. The information herein is provided “asis” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the  
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use  
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products  
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information  
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may  
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