FAN3100TMPX [ONSEMI]
TTL 输入,单反向或非反向输出,峰值 3A 汲电流,3A 源电流,低侧门极驱动器;型号: | FAN3100TMPX |
厂家: | ONSEMI |
描述: | TTL 输入,单反向或非反向输出,峰值 3A 汲电流,3A 源电流,低侧门极驱动器 驱动 驱动器 |
文件: | 总20页 (文件大小:19749K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.cn
ꢀꢀꢁ 2ꢀA ꢂꢃꢁꢄꢅꢆꢇꢂꢃ
SOT23−5
CASE 527AH
WDFN6 2x2, 065P
CASE 511CY
FAN3100T, FAN3100C
ꢈꢉ
FAN3100 2 A ᧥ᥡꢀ҈
ࡈ
ꢁꢂꢀꢃꢄईʽრꢁꢅꢆͥᖰꢂꢇ ໐ꢃꢀἡꢈΒ,ꢀ҈ꢄ᪉რꢁၴ✈ꢀ҈ꢅŔꢆꢇꢈNꢈṿᬣᄚꢈ
MOSFET 。ᵄ ꢀ ҈
ࡈ
Åᖰ ꢂ TTL (FAN3100T) CMOS (FAN3100C) ᩣ⃘ͅꢃ。ͥ᮸ꢀᢿ
şᩣϚƽᓡꢄꢀၓ⒖ ᇡ,DŽАꢀ⁰ꢀի᪫ͅ࿅ļී
ࣔ
,®ᖰꢂᴀիῑൺѿ்。 FAN3100 ᖰꢂᇋꢈMOSFETꢈრꢁሇ்,
ईꢇ⍡ѿ╧ᨼᕂࡈ
ꢁꢂ ꢅᣠଇ℠ႆऐᖰꢇᜨ╧。
FAN3100 ꢀ҈
ࡈ
ͥਾ✈nᣠঘᩣϚॷŔꢈMillerDrivet ᦖᥤ。 ᪩ꢆ֬ᥡሇꢈMOSFET ঔ
ר
ईꢈMOSFET რ/ꢁꢄӛŔMillerꢀ चॷꢅᖰꢂꢇ໐ꢃꢀἡ,Åᣠଇ℠ႆऐίრꢁᔿ૧,
៖ ᖰꢂᨸАᨸ
ꢀիᘦဥ٬֭
ױ
ꢀἡ்ѻ。 PIN ASSIGNMENT
IN+
AGND
VDD
1
2
3
6
5
4
IN−
PGND
OUT
2 x 2 mm 6 ꢀꢁ MLP (ꢀꢂꢃ)
FAN3100 ᪨ᖰꢂ
፻ᰝਾŔ֬ꢃᬣᩣͅ,✈nई
Lj֭Lj ᰁჯ⛻࿅ļ,✄̡ᚈൾឝꢆꢇş்ѿ்。ୢꢆꢇꢉꢇᩣͅ
ֿधᤊᖅ,Ϲͥ᮸ꢀℋúȯਾᩣֿͅ,ÅƟ෦ᩣϚֿᒩೃꢄ
ꢀၓ,Åƽᓡѿ╧ MOSFET ꢁឍ。
FAN3100 Თ✈ៀჵএ⑀∲ꢈ2 × 2 mm 6 ჵএៀᾕ᎕ꢈ
(MLP),Åᣠ෯ŔบෘᖰꢂϚൂŔ⋍ሇ்,Თ✈࿅✊᧧Φꢈ5 ჵ
௪ SOT23 ᎕。
1
2
3
5
VDD
GND
OUT
IN+
4
IN*
Features
SOT23−5 (ꢀꢂꢃ)
ꢊꢄ
•ꢊ3 A ໐ꢃ∬ꢀἡ/⁰ꢀἡ,V =12 V
DD
•ꢊ4.5 А 18 V ࿅ļී
ࣔ
MARKING DIAGRAM
•ꢊ2.5 A ∬ꢀἡ/1.8 A ⁰ꢀἡ,V
= 6 V
OUT
•ꢊ֬ꢃᬣᬋᩡᩣ̡ͅᚈꢃꢄş்ѿ்ᰝਾꢀ
Lj֭Lj •ꢊៀᩣͅ៖ͥ᮸ꢀℋꢁ₽ꢀ҈
ࡈ
100X M G
•ꢊ1 nF ᩍ៖,͘५⛺ԧ៖ꢅꢀ13 ns,͘५⛻ℝ៖ꢅ ꢀ9 ns
•ꢊ
ᓉ TTL CMOS ᩣ⃘ͅꢃ G
•ꢊMillerDrive™ ᑠᤏ
•ꢊꢃꢄᩣͅ⛻ℝ⛺ԧ,͘५Āᚍზ៖ꢅꢄn20 ns
•ꢊ6 ჵ௪ 2x2 mm MLP 5 ჵ௪ SOT23 ᎕
•ꢊ⍭ൺ▏ꢁႆꢀ−40°C А 125°C
• These Devices are Pb−Free and Halogen Free
Applications
100X = Specific Device Code
X = T or C
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ꢅꢋ
•ꢊრꢁꢀ⁰
ORDERING INFORMATION
See detailed ordering and shipping information on page 17 of
this data sheet.
•ꢊꢇᜨ MOSFET რꢁ
•ꢊ
ᵅἡꢀᢿ •ꢊDC−DC ᨼᕂ
ࡈ
•ꢊꢀᤚᖇЖ
© Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
October, 2022 − Rev. 5
FAN3100TCN/D
FAN3100T, FAN3100C
ꢌꢊꢄ(ꢄꢅ 1)
Q
JL
Q
JT
Q
JA
Y
JB
Y
JT
(ꢈꢉ 2)
(ꢈꢉ 3)
(ꢈꢉ 4)
(ꢈꢉ 5)
(ꢈꢉ 6)
ꢆꢍ
ꢀꢇ
°C/W
°C/W
6 ꢀꢁ, 2x2 mm ꢆꢇꢈꢉꢊꢋ (MLP)
SOT23−5
2.7
133
99
58
2.8
42
5
56
157
51
1. ꢁꢌꢂꢍꢎꢃꢏꢆꢐꢑꢒ;ꢑℕꢂꢄꢅꢃꢑℕၴ✈。
2. Theta_JL (Q ): Ԫොij
ণ٬ᐠᣩꢀএ(
ӥᓌÛĵᝃꢏ⋪ƨ)Ŕၵጸ∲+Ŕꢏℋ,᪩{ꢀএဘ⋪ᖅА PCB ⛺。 JL
3. Theta_JT (Q ): Ԫොij
ণ٬ꢊꢋ
⛺ጸ∲+Ŕꢏℋ,ȧᚎꢊꢋ᪗⍆ƇŔᝃꢏƽᓡईয⛰ꢓႆ。 JT
4. Theta_JA (Q ):
ণ٬▏
+Ŕꢏℋ,ꢄꢅꢃ PCB ᚎꢌ、ᝃꢏ٬ᷴἡ
。ൺꢂ✈ꢃẁᣩᝃꢏࡈ
Ŕꢎ⌖ෙἡ、ş✈ 2S2P ᥟ,ୢ JA
JEDEC ᧧Φ JESD51−2, JESD51−5
٬
JESD51−7 ᐠᫀᒔൺ(ୢ✈)。 5. Psi_JB (Y ): ꢏሇ֢ᝐ,ጸЊईꢄꢅ 4 ꢆൺ)Ŕꢏ▏⛻Ԫොijণꢓ⛾ၴ✈ꢔᢿᥟ֢⊙+ŔLj͓ሇ。ෙꢃ MLP−6
JB
ꢊꢋ,ꢔᢿᥟ֢፻ൺ)ꢇ⛾ᝃꢏ⋪ƨLjᖅ、®ꢊꢋŔÛዯ⛰ֿზĘϚŔꢈPCB ᑖᾬ。ෙꢃ SOT23−5 ꢊꢋ,ꢔᢿᥟ֢ൺ)ꢇ⛾ꢀꢁ
2ꢈLjᮋŔ pcb ᑖᾬ。
6. Psi_JT (Y ): ꢏሇ֢ᝐ,ጸЊईꢄꢅ 4 ꢆൺ)Ŕꢏ▏⛻Ԫොijণꢓ⛾ꢊꢋ⍆᮸ꢆᆣ+ŔLj͓ሇ。
JT
ꢈꢎꢉꢊ
SOT23
ꢈꢎꢏꢋ
MLP
ꢈꢎꢏꢋ
ꢌꢐ
VDD
AGND
GND
IN+
ꢈꢎꢑꢒ
1
3
2
ꢔ⁰ꢔիֿ。IC ŔŻꢔꢔ⁰。
ꢆꢐऐ,✈ꢃᩣͅǁ
ח
(¥℠ꢃ MLP ꢊꢋ)。ᖅೃ IC ⛻∲Ŕ PGND。 ऐ (¥℠ꢃ SOT−23 ꢊꢋ) 。ᩣͅ⛾ᩣϚꢔᢿŔ֢͌͑ऐ。
∮֭
ױ
ᩣͅ。⛾ VDD ᖅ៖ş்ᩣϚ。 2
3
4
5
1
6
IN−
֭Ljᩣͅ。ᖅೃ AGND ,Åş்ᩣϚ。
4
OUT
P1
᧥ᥡ╁҈ᩣϚ:ƽᓡĮꢔꢕ,ꢖ∮ᐠꢗꢘŔᩣͅϚꢙ,✄ V
ꢚꢃ UVLO ꢛꢂ。
DD
Pad
5
ᝃꢏƨֿ(¥℠ꢃ MLP ꢊꢋ)。ꢊꢋၵ᮸ꢜꢝŔꢞꢟ,ꢔᷴᖅೃꢀꢁ 5。
ꢔ⁰ᖅऐ(¥℠ꢃ MLP ꢊꢋ)。ෙꢃᩣϚ╁҈ꢔᢿ,ꢠꢡ͓ꢢꢣ⛾ᩣͅϦꢡ。
PGND
ꢓꢍꢔꢕ
IN+
IN−
OUT
0 (ꢄꢅ 7)
0
0
0
1
0
0 (ꢄꢅ 7)
1 (ꢄꢅ 7)
0
1
1
1 (ꢄꢅ 7)
7. ୢꢤẁᣩꢥ᮸ᖅএ៖Ŕꢦꢧᩣͅǁ
ח
。 www.onsemi.cn
2
FAN3100T, FAN3100C
ꢖꢎ
1
VDD
UVLO
V
DD_OK
100 kW
IN+
3
5
OUT
100 kW
100 kW
IN−
4
2
GND
ࣞ
1. ꢗꢘꢖꢎ(SOT23 ꢈꢎᰝਾ) 3
VDD
UVLO
V
DD_OK
100 kW
IN+
1
4
OUT
100 kW
100 kW
IN−
6
2
AGND
5
PGND
0.4 W
ࣞ
2. ꢗꢘꢖꢎ(MLP ꢈꢎᰝਾ) www.onsemi.cn
3
FAN3100T, FAN3100C
ꢋ ꢏᝐ
ᣠꢐꢑ
−0.3
ꢏᝐ
ꢀꢇ
V
V
DD
VDD ೃ GND
20.0
V
GND −0.3
GND −0.3
GND −2
V
DD
V
DD
V
DD
+ 0.3
V
IN+
٬
IN− to GND, AGND PGND ꢔի OUT ೃ GND, AGND PGND ꢔի
IN
V
OUT
+ 0.3
+ 0.3
V
ᩣϚֿꢈ(OUT) АꢈGND、AGNDꢈꢈPGNDꢈŔꢨꢩꢔիꢈ(T
ꢈ(ꢄꢅ 8)
< 300 ns)
V
PULSE
T
ꢀꢁ⋪ᖅꢓႆ (10 ꢪ)
ণꢓ
+260
°C
°C
°C
L
T
−55
−65
+150
+150
J
T
ꢫʈꢓႆ
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
(֢ꢬꢭ)
ୢꢤꢔիꢮ᪗ꢯꢰꢱൺꢂጸꢆϷϚŔꢂꢲꢳ,
ࡈ
Öꢴ்úꢵꢶ。ୢꢤꢮ᪗Ûĵ᪩{℠ꢂ,ꢠꢈꢷƽꢸࡈ
Öѿ்,ꢴ்úොꢹࡈ
Öꢵꢶ,ꢺꢻ ꢴꢼሇ。
8. ꢽᝃꢏ℠Ж(< Max T )
J
ᖈภꢒꢓꢔ
ꢋ ꢏᝐ
ᣠꢐꢑ
4.5
ꢏᝐ
ꢀꢇ
V
V
DD
ꢔ⁰ꢔիꢲꢳ
18.0
0
V
V
V
ᩣͅꢔի IN+、IN−
ꢾļ▏ꢓႆ
DD
IN
T
−40
+125
°C
A
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
(֢ꢬꢭ)
ꢚꢃꢿꣀꣁļꢲꢳጸꣂꢆᐠϷꢔի៖,⛽ƽꢸ்ꣃ꣄ဘꣅ。៖ईꢿꣀꣁļꢲꢳጸꣂꢆᒔൺꢲꢳÅꢥŔꢔի⛻ꣅ,ꢴ்úꢺꢻ
ࡈ
ÖŔ ꢴꢼሇ。
ꢙᷴꢊꢄ(ꢖ∮ᣩꢄꢅ,V = 12 V ✄ T = −405°C ೃ +125°C。ꢔἡᾑ
ࡈ
Öൺ)ꢇ꣄ꢂ,ἡϚꢇꢂ。) DD
J
ꢋ ꢏᝐ
ꢒꢓꢔ
ᣠꢐꢑ ꢕꢖꢑ ᣠꢗꢑ
ꢀꢇ
ꢙ⁰
V
I
ꣁļꢲꢳ
4.5
18.0
0.35
0.80
4.3
V
mA
mA
V
DD
ꢔ⁰ꢔἡᩣֿͅ/EN ᖅ
FAN3100C (ꢄꢅ 9)
0.20
0.50
3.9
DD
FAN3100T
V
ON
ොꢔի
͓ꢔի
3.5
3.3
V
OFF
3.7
4.1
V
ꢓꢘ(FAN3100T)
V
IN+、IN− Įꢔի,ꢯꢰꢂ
0.8
V
V
INL_T
INH_T
V
IN+、IN− ꢚꢔի,ꢯ꣎ꢂ
꣏Ljᩣͅ
2.0
175
1
I
IN ® 0 ೃ V
IN ® 0 ೃ V
−1
−175
0.2
mA
mA
V
IN+
DD
I
֭
ױ
ᩣͅ IN−
DD
V
IN+、IN− ꣐꣑ꢔի
0.4
0.8
HYS
ꢓꢘ(FAN3100C)
V
IN+、IN− Įꢔի
IN+、IN− ꢚꢔի
IN ꢔἡ,Įꢔꢕ
30
%V
%V
INL_C
INH_C
DD
V
70
175
1
DD
I
IN ® 0 ೃ V
IN ® 0 ೃ V
−1
mA
mA
%V
INL
DD
I
IN ꢔἡ,ꢚꢔꢕ
−175
INH
DD
V
IN+、IN− ꣐꣑ꢔի
17
HYS_C
DD
www.onsemi.cn
4
FAN3100T, FAN3100C
ꢙᷴꢊꢄ(ꢖ∮ᣩꢄꢅ,V = 12 V ✄ T = −405°C ೃ +125°C。ꢔἡᾑ
ࡈ
Öൺ)ꢇ꣄ꢂ,ἡϚꢇꢂ。) DD
J
ꢋ ꢏᝐ
ꢒꢓꢔ
ᣠꢐꢑ ꢕꢖꢑ ᣠꢗꢑ
ꢀꢇ
ꢓꢍ
I
OUT ꢔἡ,ꢆի,꣒ꢔἡ (ꢄꢅ 10)
OUT ꢔἡ,ꢆի,⁰ꢔἡ (ꢄꢅ 10)
OUT at V /2, C
= 0.1 mF,
= 0.1 mF,
2.5
A
A
SINK
DD
LOAD
f = 1 kHz
I
OUT at V /2, C
−1.8
SOURCE
DD
LOAD
f = 1 kHz
I
OUT ꢔἡ,꣓ꢂ,꣒ꢔἡ (ꢄꢅ 10)
OUT ꢔἡ,꣓ꢂ,⁰ꢔἡ (ꢄꢅ 10)
ᩣϚ⛺ԧ៖ (ꢄꢅ 11)
C
C
C
C
= 0.1 mF, f = 1kHz
= 0.1 mF, f = 1 kHz
= 1000 pF
3
A
A
PK_SINK
LOAD
LOAD
LOAD
I
−3
PK_SOURCE
t
13
9
20
14
28
30
ns
ns
ns
ns
mA
RISE
t
ᩣϚ⛻꣔៖ (ꢄꢅ 11)
= 1000 pF
FALL
LOAD
t
t
, t
D1 D2
ᩣϚ꣕ū ზ꣖, CMOS ᩣͅ(ꢄꢅ 11)
ᩣϚ꣕ū ზ꣖, TTL ᩣͅ(ꢄꢅ 11)
ᩣϚ֭
ױ
꣙ꢽꢔἡ (ꢄꢅ 10) 0−12 V , 1 V/ns ի꣗꣘
7
9
15
16
500
IN
, t
D1 D2
0−5 V , 1 V/ns ի꣗꣘
IN
I
RVS
9. ꢔ⁰ꢔἡĮ,ꢇ TTL ꢔᢿꢃñ。
10. ꣠꣡꣢꣣。
11. ֢꣤꣥ꢃ 3
٬ꢃ
4 Ŕ៖꣦ꢃ。 90%
90%
Output
Output
10%
10%
V
INH
V
INH
Input
Input
V
INL
V
INL
t
D1
t
D2
t
D1
t
D2
t
t
FALL
RISE
t
t
RISE
FALL
ࣞ
3. ꢙLj ࣞ
4. ꢚLj www.onsemi.cn
5
FAN3100T, FAN3100C
ꢕꢖꢄ்ꢊꢛ
(ꢖ∮ᣩꢄꢅ,꣧͘ሇ꣨Ö꣩ 25°C ✄V = 12 V )
DD
ࣞ
5. IDD(∩ꢜ)ꢝꢙ⁰ꢙիŔ͓ߋ
ࣞ
6. IDD (∩ꢜ)ꢝꢙ⁰ꢙիŔ͓ߋ
ࣞ
8. IDD (ៀᩍ)ꢝ⍡╧Ŕ͓ߋ
ࣞ
10. IDD (1 nF ᩍ)ꢝ⍡╧Ŕ͓ߋ
ࣞ
7. IDD (ៀᩍ)ꢝ⍡╧Ŕ͓ߋ
ࣞ
9. IDD (1 nF ᩍ)ꢝ⍡╧Ŕ͓ߋ
www.onsemi.cn
6
FAN3100T, FAN3100C
ࣞ
12. IDD (∩ꢜ)ꢝꢚႆŔ͓ߋ
ࣞ
11. IDD (∩ꢜ)ꢝꢚႆŔ͓ߋ
ࣞ
13. ꢓꢘ⃘ꢑꢝꢙ⁰ꢙիŔ͓ߋ
ࣞ
14. ꢓꢘ⃘ꢑꢝꢙ⁰ꢙիŔ͓ߋ
ࣞ
15. ꢓꢘ⃘ꢑ % ꢝꢙ⁰ꢙիŔ͓ߋ
www.onsemi.cn
7
FAN3100T, FAN3100C
ࣞ
17. TTL ꢓꢘ⃘ꢑꢝꢚႆŔ͓ߋ
ࣞ
16. CMOS ꢓꢘ⃘ꢑꢝꢚႆŔ͓ߋ
ࣞ
19. UVLO ₾ࢾ
ꢝꢚႆŔ͓ߋ
ࣞ
18. UVLO ⃘ꢑꢝꢚႆŔ͓ߋ
ࣞ
20. Āᚍზꢝꢙ⁰ꢙի ࣞ
21. Āᚍზꢝꢙ⁰ꢙի www.onsemi.cn
8
FAN3100T, FAN3100C
ࣞ
23. Āᚍზꢝꢙ⁰ꢙի ࣞ
22. Āᚍზꢝꢙ⁰ꢙի ࣞ
25. ĀᚍზꢝꢚႆŔ͓ߋ
ࣞ
24. ĀᚍზꢝꢚႆŔ͓ߋ
ࣞ
26. ĀᚍზꢝꢚႆŔ͓ߋ
ࣞ
27. ĀᚍზꢝꢚႆŔ͓ߋ
www.onsemi.cn
9
FAN3100T, FAN3100C
ࣞ
29. ⛺ԧ៖ꢝꢙ⁰ꢙիŔ͓ߋ
ࣞ
28. ĀᚍზꢝꢚႆŔ͓ߋ
ࣞ
30. ⛺ԧ٬⛻
ℝ៖ꢝꢚႆŔ͓ߋ
ࣞ
32. ⛺ԧ/⛻ℝỂᅂ,10 nF ᩍ ࣞ
31. ⛺ԧ/⛻ℝỂᅂ,1 nF ᩍ www.onsemi.cn
10
FAN3100T, FAN3100C
ࣞ
34. VDD = 12 V ៖ŔΦ∩ꢜꢜꢙꢛỂᅂ ࣞ
33. VDD = 12 V ៖ŔΦ∩ꢜ⁰ꢙꢛỂᅂ ࣞ
36. VDD = 8 V ៖ŔΦ∩ꢜꢜꢙꢛỂᅂ ࣞ
35. VDD = 8 V ៖ŔΦ∩ꢜ⁰ꢙꢛỂᅂ V
DD
4.7 mF
Ceramic
470 mF
Al. El.
Current Probe
LECROY AP015
I
OUT
IN
1 kHz
1 mF
Ceramic
V
OUT
C
LOAD
1 mF
ࣞ
37. Φ∩ꢜ IOUT/VOUT ꢝꢞꢙꢟ www.onsemi.cn
11
FAN3100T, FAN3100C
ꢅꢋꢞꢟ
ꢓꢘ⃘ꢑ
V
DD
FAN3100 ᖰꢂꢈTTL ꢈCMOS ᩣ⃘ͅꢃ。ई
FAN3100T ꢅ,ᩣ⃘ͅꢃ
ר
࿅✊᧧ΦꢈTTL ᬋᩡ⃘ ꢃ,ᚵ⃘ꢃ⛽ŽᠦnꢈV ꢈꢀի,✄
ᣩଇॶꢈ0.4 VꢈŔ DD
₾
ࢾ
ꢀի。᪩{ꢀၓᚈᩣֿͅ፻ඝීࣔ
ᩣͅᬋᩡǁ ח
ꢀၓᐠꢀ҈,ଇnꢈ2 VꢈŔꢀիᐭ்፻̾ᙴꢀᬋᩡꢇ ꢀၓ。TTLꢈᩣͅŔꢀ҈ǁ
ח
ၴᣩᇋ⛺ԧ٬
⛻ℝẟ, իᘦ╧ꢈ6 V/ms ᣔᇋ,᪩ᨗ®ꢈ0ꢈАꢈ3.3 VꢈŔ⛺ԧ៖ꢅ
ၴꢀꢈ550 nsꢈᣔ෯。ᨼᕂ╧ᩓꢄ៖,ꢀᢿ
ࡊ
ૐúො ೄꢀ҈ꢀիᡕꢄ₾
ࢾ
ꢀի,ၖͭᴁᒶֱꢀ҈ࡈ
ᩣͅ, ჵᡇ࿅ļ⛽ԃൺ。
Input
stage
V
OUT
ईꢈFAN3100C ꢅ,ᬋᩡᩣ⃘ͅꢃŽᠦnꢈV ꢈꢀၓ,
DD
ၖ✄ᄳꢈV ꢈꢀꢈ12 Vꢈ៖,ᬋᩡ⛺ԧẟ⃘ꢃॶꢀꢈV Ŕꢈ
DD
DDꢈ
55%,ᩣͅ⛻ℝẟ⃘ꢃॶꢀꢈV ꢈŔꢈ38%。CMOSꢈᩣͅ
DD
ᰝਾᖰꢂfꢆꢇॶꢀꢈ17% V ꢈଇ෯Ŕ₾
ࢾ
ꢀի。ୢ DD
ࣞ
38. MillerDrivet ᩣϚণᥤ ई
ߋ
যꢁꢂꢅᅷАിଢ଼ר
٬ឡ
ᢿᑠᤏ,்૿ℂᵂࡊ
ૐ̄यᩣͅꢀի₾
ࢾ
է׃
,ϹꢈCMOSꢈᩣͅ
ş✈ᩓፂ Ŕ᪉ẟ(ᖅ᪡DŽἡ)。᪩ᨗฑᚈꢃꢄᛓĭnᖇЖ
ǁ
ח
٬
ꢀ҈ࡈ
ꢈINꢈჵ௪+ꢅŔꢆꢇꢈRCꢈꢀᢿ,ގ
̾ꢁਾ ൺ៖ꢅꢆ。ꢀ҈
ࡈ
ꢈINꢈჵ௪⛺Ŕፂ⛺ԧẟ෦ईᖇЖ ǁ
ח
٬
ꢀ҈ࡈ
ᩣϚჵ௪+ꢅ ჵͅfꢆꢇზ៖。 ꢠիꢡꢉ
FAN3100ꢈ؏҈ᬋᩡটꢄøӶ,
Љ✈ᴀիῑൺꢈ (UVLO) ѿ்ꢀ҈֢⊙ᖅऐŔꢈNꢈṿᬣꢈMOSFET,Å
̾ƽꢈICꢈᣩၯऐ؏҈。ᄳꢈV ꢈn⛺ԧ℆ᶕ,Ħ᠏࿅
DD
∩ꢜꢙ⁰ꢙꢛ
ļꢀիꢄnꢈ3.9 Vꢈ៖,ꢀᢿƽᓡᩣϚꢀꢄꢀၓ,⛽ַ
ᩣͅჵ௪⒖ᇡŔᅑ
ڭ
。ईᚵࡈ
Ö↠Ἓ
,ईᚵࡈ
Öꢁ ईꢈI (∩ᇡ)͘५ሇ்
ࣞ
ᅂ(֢ᒑࣞ
ꢈ5ꢈ-ꢈࣞ
ꢈ6ꢈ٬
DD
ࣞ
ꢈ11-ꢈࣞ
ꢈ12)ꢅ,Ểᅂᣒএ᠏ईᐠᣩᩣֿͅਾ(ᩣ ₽+Эꢀ⁰ꢀիᆥ⍋ᢜ།ꢈ0.2 V。ᄳꢄꢈV ꢈꢀ⁰ꢀի
DD
ࣀ
ѿ╧ϧᕂ⛿ࡊ
⋃៖,ᚵ₾ࢾ
ᣩЉnℂᵂᑶ҈。 Ϛꢀꢄꢀၓ)ŔÖ⛻⛿Ŕ,ЊfἫᚥᰝਾ⛻∩
ᇡꢈI ꢀἡŔᣠ෯ꢃ。ෙn͖¶⒖ᇡ,ἡꢄᩣͅ
ֿ٬
᪩ҝᰝਾෙnꢀ҈ꢇƇꢈPꢈṿᬣꢈMOSFETꢈ⛽✈,
ࣀ
DD
ᩣϚֿꢈ100 kWĂꢀℋŔ℔Ҁꢀἡୢᨦ
ࣞ
ᐠЊ ꢀꢀ҈
ࡈ
ŔꢄᩣϚꢀիúईꢈV ꢄnꢈ3.9 V ៖ොꢃꢈP DD
(֢ᒑ
ࣞ
ꢈ1ꢈ-ꢈࣞ
ꢈ2)。ई᪩{እΕ⛻,∩ᇡꢈI ꢀἡ ṿᬣꢈMOSFET 。
DD
Ŕൾℕꢃꢀᣒএꢃ⛾℔Ҁꢀἡ+
٬
。 VDD ꢢꢟꢙꢠꢣꢡ
ᑑşᵄꢈIC ᪕ොꢃꢀ⁰
ࡈ
Ö,ᆥ⍋ईꢈV ٬
ꢈGND ჵ௪+ꢅᖅꢆꢇภ᮸Ŕꢇ⍡ឡᢿꢀꢈC
ꢈESRꢈ
٬
ꢈESL),✄͗ᣩᣠʽএ⁏ႆ。ᵄꢀ᠏ 10 mFꢈАꢈ47 mFꢈଇᲟꢀᒳꢀ
ࡈ
Ŕጵ̥,ဘᒑnꢀ҈ ࡈ
٬ᖇЖ
ࡈ
ȯਾꢀᢿ⛺。 MillerDrivet ᧥ᥡ╁҈ᑠᤏ
DD
FAN3100ŔᩣϚॷ͗ᣩୢ
ࣞ
ꢈ38ꢈꢅᐠЊŔꢈMillerDrive ꢈᦖᥤ,ণ
ר
f֬ᥡሇࡈ
Ö٬
ꢈMOSꢈࡈ
Ö,்૿ईଇී ࣔ
ꢀ⁰ꢀի٬ꢁႆָӶ
⛻ᖰꢂଇꢀἡ。ᄳᩣϚॷईꢈ (͗ᣩꢄ
BYP
1/3ꢈ
٬
ꢈ2/3 V ꢈ+ꢅᘦ҈៖,֬ᥡሇࡈ
Ö்૿ᑟᩍᩓଇ DD
ꢀἡ,MOSꢈ
ࡈ
Ö෦ᩣϚᨸАᨸᒩꢇᒩꢄ。 ᓉꢈC ꢈꢃŔ͘५Ö᠏ƽᓡꢈV ꢈꢀ⁰⛺ŔউỂ
BYP
DD
MillerDriveꢈŔ✈᠏Ҁრꢁ҈ļ,ꢈ͖տ◦ꢀई
MOSFETꢈŔ᧥ᥡೃ⃯ᥡꢀ፻̥ꢀꢀ៖(ļꢀො
ꢃ/ꢁឍꢄӛŔꢆ᮸Ϧ),ईꢈMillerꢈၓ
א
ꢅᖰꢂᣠ ꢇꢀἡ。ෙnꢈMOSFETꢈොꢃꢁឍꢅ⇐ᑑ⇆ꢀիϧ
ᕂѿ்Ŕၴ✈ᓐ,Փş݃Ҳၓ
א
⛽úϚ▐,ꢀ҈ࡈ
?்૿ꢀᇋრꢁꢄӛᖰꢂᢃ૿ꢇŔ໐ꢃꢀἡ。᪩ҝ
እΕဘဘϚ▐ई
ᵅἡࡈ
Ŕၴ✈ꢅ,ࣀ
ꢀijlᥡٱ
ꢃဘई MOSFET ොꢃ+Эฑ࿒টොꢃ。
ꢀիꢈ≤5%。᪩ꢃဘş✈ꢈ≥20ꢈǭؙᜨᩍꢀꢈC ꢈŔꢃ
EQV
ൾ▐,ईᵄൺ)ꢀꢈQgate/V 。ꢃဘ✈ꢈ0.1 mF Аꢈ
DD
1 mF ᣔଇŔⅆ⛗ꢀ,
ࣀ
ꢀൣÌ᠏ꢀ«៸(ūୢ X5R
٬
ꢈX7R),͗ᣩിଢ଼Ŕꢁႆሇ٬
ꢇꢈΒꢀἡ் ѻ。
ୢꢀᢿ
ࡊ
ૐᅑڭ
fᵃဘ᪠ጜ,C ꢈꢃ
ᖰꢇೃꢈ BYP
C ꢈŔꢈ50−100ꢈǭ,ꢈC ꢈϦᒳꢀꢉꢇꢀ。͖
EQV
BYP
ꢅꢆꢇၴꢀᩓଇŔꢃ(nؙᜨᩍꢀ),
׆
ꢆꢇ ŔꢃϹᩓ෯(ୢꢈ1−10 nF),൩᎕ईҋꢈVDDꢈ
٬
ꢈGNDꢈ ჵ௪ᣠ᪡Ŕऐយ,ÅᑟᩍꢀἡꢈΒŔᣔꢇ⍡᮸Ϧ。
www.onsemi.cn
12
FAN3100T, FAN3100C
ꢢꢤꢝꢥꢦꢣꢡ
MOSFETꢈŔ⁰ᥡ。ꢀfൾ▐ᇋꢁឍ,ꢃᢿ⛺Ŕꢀℋ
٬ꢀዿၴ
ᚵᣠ෯Ӷ。 FAN3100
؋
ᣩᇋ֭ၴᩣͅꢀᢿ、ʽĀᚍზ,Å ்֪૿ᖰꢂꢀἡ໐ꢃꢇnꢈ2 AꢈŔᩣϚॷ,ᣩЉnꢀի
ᨼᕂ៖ꢅ®ꢄnꢈ10 nsꢈАᡕꢄꢈ100 ns。ᄚ⊨ᖈภ⛻ᫀ
এ⛾ᖅᓧԷ:
V
DS
V
DD
• şꢇꢀἡᩣ
Ϛ٬ꢀ⁰ᖅऐ
ᢿᅤ⛾ᬋᩡᩣͅǁח
٬
ǁ ח
ᖅऐᢿᅤϦҋ。᪩ई◦ꢈTTLꢈꢀၓᬋᩡ⃘ꢃ៖ Ћꢁ῾。
C
BYP
FAN3100
• ƽᓡꢀ҈
ࡈ
ฝ
்ऐ∰᪡ᩍ,ÅşଇꢀἡොএŔ ⁏ႆᣠ෯Ӷ。᪩ᨗ
ίꢋତꢀዿ,ᖰꢇꢇრꢁ ѿ்,
៖ίױ
ꢀ҈ࡈ
ᩣͅ٬
͖¶ࣔو
ꢀᢿ᩠ EMI Ŕ▏ᢿ∲ҿ。
PWM
• FAN3100
Თ✈ꢉҝ᎕,ჵ௪ᰝਾӝᣩ⛽
,Ħ ᖰꢂŔሇ்LjĜ。ईꢈ6ꢈჵ௪ꢈMLPꢈ᎕ꢅ,ჵ௪ꢈ2ꢈͥ
᮸ᖅೃᩣͅᰁᒿऐ,ၖၴᚵꢃꢄꢈICꢈ⛻∲Ŕᩓʽ
ᢿᅤDŽೃꢀ⁰ᖅऐ,Փჵ௪ꢈ5。ईꢈ5ꢈჵ௪ꢈSOT23ꢈ
ꢅ,ͥ᮸
ᰁᒿ٬ꢀ⁰ऐ
ᖅ៖ꢃꢄϦრŔ、ԵⓌŔ ⋪ᖅএᖅೃჵ௪ꢈ2ꢈŔ,ၴᚵ✈ļ
ꢀ⁰٬ᖇЖ
ǁח
Ŕᡎꢃᖅऐ⊙。
ࣞ
40. MOSFET ͓ꢧŔꢙꢛꢟꢤ ꢔꢕꢨꢓꢩꢑꢪ
FAN3100 ǯꢃጸЊf֬ᩣͅᰝਾ⛻Ŕ࿅ļ⒖ᇡ。
ई
Ljꢀ҈ࡈ
ᰝਾꢅ,IN−ꢈჵ௪ၴꢀᬋᩡꢄꢀၓ。ඵ IN−ꢈჵ௪ᖅᬋᩡꢇꢀၓ,úොೄ
ࡈ
Öѿ்ё✈,✄ ꢀ҈
ࡈ
ŔᩣϚማ᠏ƽᓡꢄꢀၓ,⛽ַꢈIN+ꢈჵ௪⒖ᇡŔ ᅑ
ڭ
。 • ᚈૺꢇѿ╧ꢀᢿᯍ៳ַ
ࡊ
ૐŔᅑڭ
,ࡊ
ૐꢆ ᥅n͖ᩣϚ͖ൣ᮸⁰,ᣩ
்ොೄᩣ Ϛͭᒶֱ。ୢईᰁᒿᥟ∮ᣠœꢀᢿภ(͗ᣩ
⁏ᩣͅ、؏✈ᩣϚჵএ)ꢅἫᚥꢀᢿ,᪩{ᅑ
ڭ
úЋ༧。ꢀfງᅷᣠœᜨ,ჵ௪এᡚʽᡚ
DŽᖅᡚଢ଼。
ጸ 1. FAN3100 ꢩꢑꢪ
IN+
0
IN−
0
OUT
• ၴᣠ෯Ӷොꢃ
٬
ꢁឍꢀἡᢿᅤ,ୢÅ⛻ְᐠᫀ。 ࣞ
ꢈ39ꢈЊfꢈMOSFETꢈොꢃ៖ŔꢈΒ᧥ᥡꢀ҈ꢀἡ ꢃᢿ,ꢀ҈
ࡈ
ꢀ᧥ᥡ̥ꢀ
ොꢃꢈMOSFET。᪩ꢇꢀἡ ꢂภ᮸ឡᢿꢀꢈC ꢈ⛿,ἡটꢀ҈
ࡈ
АꢈMOSFETꢈ BYP
᧥ᥡ,ͭАऐ。ꢀfฝ
்ऐൾ▐ꢇ໐ꢃꢀἡ,ꢃᢿ 0
0
1
0
0
1
1
0
1
1
⛺Ŕꢀℋ
٬ꢀዿၴ
ᚵᣠ෯Ӷ。᪩ꢇภ᮸ꢀꢈC ꢈई BYP
ꢀ҈
ࡈ
ꢈMOSFETꢈꢀᢿꢅŔļ✈᠏ؘꢇ໐ꢃꢀἡꢈΒ ,ℂᵂ͖ၒᑐ PWM ᖇЖ
ࡈ
Ŕᜯዿᰁᒿꢀᢿ。 ࣞ
ꢈ41ꢈꢅᐠЊŔ
Ljꢀ҈ࡈ
ᰝਾꢅ,IN−ꢈჵ௪⛾ऐLj ,ꢈIN+ꢈჵ௪ᖅᩣͅǁ
ח
ꢈ(PWM)。IN−ꢈჵ௪ᖅᬋᩡ ꢇꢀၓ៖,ꢀ҈
ࡈ
ё✈,ၖ✄ᩣϚৄᓡꢄꢀၓ,⛽ַ IN+ ჵ௪⒖ᇡŔᅑ
ڭ
。 V
DD
V
DS
C
BYP
VDD
IN+
FAN3100
PWM
OUT
FAN 3100
PWM
IN−
GND
ࣞ
39. MOSFET ꢣꢀŔꢙꢛꢟꢤ ࣞ
41. ꢥ்Ŕꢦꢓꢘꢇꢂꢃ,ꢙLjᰝਾ ࣞ
ꢈ40ꢈЊfꢈMOSFETꢈꢁឍ៖Ŕꢀἡꢃᢿ。◦ዓ ऐ,ꢃꢄꢆꢇᩓ෯Ŕ▏ᢿ,ꢀ҈
ࡈ
DŽᖅ෦ꢀἡϦἡА www.onsemi.cn
13
FAN3100T, FAN3100C
ࣞ
ꢈ42ꢈꢅᐠЊŔ֭Ljꢀ҈ࡈ
ၴ✈ꢅ,IN+ꢈჵ௪ꢀꢇꢀ ၓ。ꢈIN+ꢈ⛾ꢈGNDꢈLj៖ᩣϚꢄꢀၓ,⛽ַꢈIN−ꢈჵ௪
⒖ᇡŔᅑ
ڭ
。 Turn−on Threshold
V
DD
IN−
VDD
IN+
(V
DD
)
OUT
IN+
FAN3100
PWM
IN−
GND
OUT
ࣞ
42. ꢥ்Ŕꢦꢓꢘꢇꢂꢃ,ꢚLjᰝਾ ࣞ
44. ꢚLjꢧꢂỂᅂ ꢒꢓỂᅂ
ꢌꢣꢡ
⛺ꢀ៖,ꢀ҈
ࡈ
ŔᩣϚƽᓡꢄꢀၓ,DŽАꢈV ꢈꢀի DD
᧥ᥡꢀ҈
ࡈ
ꢀ҈ꢇ⍡╧რꢁꢈMOSFETꢈ٬
ꢈIGBTꢈ៖, ú⛿༧Ŕѿ૧。ईၴ✈ꢅᲝᑑŔ᠏,̾ൺ᧥ᥡꢀ
҈
ࡈ
Ŕѿ૧֪͖ჵᡇŔণꢁ,̾ƽࡈ
Öई
ᖅַŔꢁ ႆී
ࣔ
ͥ࿅ļ。 Аොꢃ⃘ꢃ。ᩣϚꢈΒꢀἡဥꢃ⅟ȐꢈV ꢈŔ⛺ԧ
DD
⛺ԧ,DŽАꢈV ꢈАԃᇡ。
ࣞ
ꢈ43ꢈꢅūЊŔ
Lj᪠ጜ DD
ᛄfᩣϚֿƽᓡईꢄꢀၓ,DŽААꢈUVLOꢈ⃘ꢃ,
⌖
ᩣϚ⛾ᩣͅ
Lj。 ᧥ᥡꢀ҈
ࡈ
Ŕማѿ૧ꢀꢉ̣ÖꢈP ꢈ
٬
ꢈP ꢈ
GATE
DYNAMIC
+
٬
: V
DD
PTOTAL + PGATE ) PDYNAMIC
(eq. 1)
Turn−on Threshold
᧥ᥡꢀ҈ᔿ૧:ֱ⛿ईᖰꢂ᧥ᥡꢀἡ、ᓩ⍇რꢁ⍡
╧ꢀ҈ᩍꢈMOSFETꢈŔꢄӛꢅᣠꢍᑑŔѿ૧。ꢂꢀ҈
MOSFETꢈොೄŔѿ૧ꢂÅ⛻យჯ̾ൺ,ꢈ͖ꢅ
IN−
MOSFETꢈnᓧൺ᧥ᥡ-⁰ꢀիꢈV ,ဆᣩ᧥ᥡꢀ็ꢈ
GS
Q ,Å֪nრꢁ⍡╧ f
:
IN+
G
SW
PGATE + QG @ VGS @ fSW
(eq. 2)
҈ᇡ⍔ꢀ҈ꢈ/ꢈDŽꢃꢀἡ:ई҈ᇡ࿅ļÖ⛻(ӥᓌ
ჵ௪⛺ᒩ/⛻ᒩꢀℋ),⁰nͥ᮸ꢀἡὨ૧Ŕѿ૧
OUT
ई͘५ሇ்ሇ᮸Ϧ®ꢈI (ៀᩍ)⛾⍡╧Ŕꢁ
ࣞ
DD
ࣞ
43. ꢙLjꢧꢂỂᅂ ꢅງ,®̾ൺൾℕ࿅ļÖ⛻®ꢈV ꢈᅷАŔꢀἡ
DD
I
:
DYNAMIC
PDYNAMIC + IDYNAMIC @ VDD
(eq. 3)
ෙn
ࣞ
42 Ŕ֭Ljᰝਾ,؏҈Ểᅂୢࣞ
44 ᐠЊ。ᄳ INꢌꢈ⛾ꢈVDDꢈLj✄ꢈIN−ꢈ⛾ᩣͅǁ
ח
Lj៖,ᩣϚꢈΒ ⛾ᩣ֭ͅLj。⛺ꢀ៖,֭LjᩣϚֿƽᓡꢄꢀၓ,DŽА
V
DD
ꢀիАොꢃ⃘ꢃ,͖
ൣ⛾ᩣͅƽᓡ֭Lj。 www.onsemi.cn
14
FAN3100T, FAN3100C
PDYNAMIC + 8mA @ 10V + 0.080W
PTOTAL + 0.24W
ꢆំ̾ൺfꢀ҈
ࡈ
Ŕѿ૧,LjෙꢀᢿᥟŔꢀ҈ࡈ
ণ Ŕꢁԧ
ÅᲗ✈Å⛻⋍͌ჯ᪫ጜĐ٧,᪩Ნ
ȧൺꢈY ᠏Ϛnꢆꢇ
ĜŔ⋍ꢁꢂ(ᝃ⋍٬ᷴἡ
)̾ൺ: (eq. 6)
(eq. 7)
JB
5 ჵ௪ SOT23 ᎕͗ᣩꢆꢇণАჵ௪⋍ሇ֢ᝐ
Y = 51°C/W。
JB
TJ + PTOTAL @ YJB ) TB
(eq. 4)
͖ꢅ:
T
ईꢆꢇ
ߋ
যၴ✈ꢅ,ࡈ
Öࣔو
Ŕภ᮸ꢁႆַꢀᢿᥟ ٬
ꢈPCBꢈণᥤ֪͖ጸ∲ᷴἡŔᅑڭ
。ꢀ̾ƽ
∰᪠ጜ, ᆥ⍋ℂᵂ
ࡈ
ÖŔᣠଇণꢁᡕꢄꢈ150°CꢈŔᣠଇ⍭ൺꢃ; = ꢀ҈
ࡈ
ণꢁ J
Y
JB
Ljꢁ)
= (psi)ꢀ⋍ሇ֢ᝐ(⛾
ꢁԧ٬ማѿ
૧ 80%ꢈℝ⍭៖,T ꢈ℠Жꢀꢈ120°C。Ოਾយӛჯꢈ4ꢈ̾ൺᐠ
J
⇐ŔꢀᢿᥟꢁႆÅƽᓡণꢁꢄn 120°C:
T
B
ᥟꢁႆ
= ई(⋍ᅡ)ጸꢅൺ)ŔĭਾŔ
TB,MAX + TJ * PTOTAL @ YJB
(eq. 8)
(eq. 9)
TB,MAX + 120°C * 0.24W @ 51°CńW + 108°C
ईᲗ✈ꢈ48 V ᩣͅŔ͘५ᵃ
ױ
ᨼᕂࡈ
ၴ✈ꢅ ļꢀᶴᩓ,෦ЭūꢅŔꢈ5ꢈჵ௪ꢈSOT23ꢈ᎕ᣟᕂꢀꢈ
(ୢ
ࣞ
ꢈ49ꢈᐠЊ),ꢈFDS2672ꢈꢀꢆꢇℼईŔꢈMOSFETꢈ ᓉ。V =ꢈV =ꢈ10 V ៖,͘५᧥ᥡꢀ็ꢀꢈ32 nC。
6 ჵ௪ꢈMLPꢈ᎕,Y ꢈ= 2.8°C/W。6 ჵ௪ꢈMLPꢈ᎕
JB
GS
DD
ईꢈ119°C ŔꢈPCBꢈꢁႆ⛻ƽᓡণꢁꢄnꢈ120°C。᪩ጸ
⑉◦บෘᣔ෯ŔꢈMLP ᎕,͖ᝃ⋍⋪ƨᖰꢂfᣔᣩ
ᜨŔ⋍ĀොÅὨᝃꢀ҈
ࡈ
Ŕ⋍Ჟ。ꢉАईί෯ꢀᢿ ማijบෘ⛾ℝꢄণꢁᖰꢇ
∰ሇ+ꢅꢎϚᤣꢊ。 ᄳईꢈ500 kHzꢈრꢁ⍡╧⛻ş✈ꢈTTLꢈᩣͅꢀ҈
ࡈ
៖, ijѿ૧
ꢂ٧
ୢ⛻: PGATE + 32nC @ 10V @ 500kHz + 0.160W
(eq. 5)
www.onsemi.cn
15
FAN3100T, FAN3100C
ꢕꢖꢅꢋꢙꢟꢎ
V
IN
ENABLE
Active LOW
FAN3100
IN−
IN+
AGND
PWM
VDD
6
5
4
1
2
3
PGND
OUT
ࣞ
45. ꢫꢨꢬꢭꢃ,ꢩꢮꢯꢅꢆꢇꢂ(ꢪ MLP ꢆꢍꢫꢰ) Q1
V
IN
T2
T1
D1
V
DD
V
SEC
D2
FAN3100
PWM
Q2
CC
0.1 μF
ࣞ
46. ꢦꢱꢬꢲꢫꢨꢬꢭꢃꢅꢆꢭիꢃŔꢇꢂꢃ V
IN
Q1
T1
L
V
OUT
D1
Q5
V
SEC
PWM
Control/
Isolation
D2
Q2
Q3
SR
V
DRV
ISOLATION
FAN3100
ࣞ
47. ꢳꢮꢙꢴꢵꢛꢇꢂꢃ V
DD
R
FAN3100C
OUT
IN
C
Delay
IN
OUT
ࣞ
48. ꢶꢋ CMOS ꢓꢘŔꢮꢏꢷზ៖ www.onsemi.cn
16
FAN3100T, FAN3100C
ꢸꢹꢞꢟ
†
ꢯꢍꢺꢻ
ꢃꢔꢏꢋ
ꢓꢘ⃘ꢑ
ꢆꢍ
FAN3100CMPX
FAN3100CSX
FAN3100TMPX
FAN3100TSX
CMOS
CMOS
TTL
6 ꢀꢁ, 2x2 mm MLP ꢊꢋ
5 ꢀꢁ SOT23
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
6 ꢀꢁ, 2x2 mm MLP ꢊꢋ
5 ꢀꢁ SOT23
TTL
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ጸ 2. Lj͓ꢰꢱ
ꢅꢆꢇꢂ
(ꢈꢉ 12)
(Sink/Src)
ꢃꢔꢏꢋ
FAN3100T
FAN3100C
ꢼꢖ
ꢓꢘ⃘ꢑ
TTL
ꢔꢕ
ꢦꢓꢘ/ꢀꢓꢍŔꢀꢀꢁ
ꢊꢋ
ꢀ2 A
ꢀ2 A
+2.5 A/−1.8 A
+2.5 A/−1.8A
+2.4 A/−1.6 A
+2.4 A/−1.6 A
+2.4 A/−1.6 A
+2.4 A/−1.6 A
+2.4 A/−1.6 A
+2.4 A/−1.6 A
+2.4 A/−1.6 A
+2.4 A/−1.6 A
+4.3 A/−2.8 A
+4.3 A/−2.8 A
+4.3 A/−2.8 A
+4.3 A/−2.8 A
+4.3 A/−2.8 A
+4.3 A/−2.8 A
SOT23−5, MLP6
SOT23−5, MLP6
SOIC8, MLP8
SOIC8, MLP8
SOIC8, MLP8
SOIC8, MLP8
SOIC8, MLP8
SOIC8, MLP8
SOIC8, MLP8
SOIC8, MLP8
SOIC8, MLP8
SOIC8, MLP8
SOIC8, MLP8
SOIC8, MLP8
SOIC8, MLP8
SOIC8, MLP8
CMOS
CMOS
TTL
ꢦꢓꢘ/ꢀꢓꢍŔꢀꢀꢁ
֭֬Lj꣪ + ֬ş்
FAN3226C ֬꣪ 2 A
FAN3226T ֬꣪ 2 A
FAN3227C ֬꣪ 2 A
FAN3227T ֬꣪ 2 A
FAN3228C ֬꣪ 2 A
FAN3228T ֬꣪ 2 A
FAN3229C ֬꣪ 2 A
FAN3229T ֬꣪ 2 A
֭֬Lj꣪ + ֬ş்
CMOS
TTL
֬꣏Lj꣪ + ֬ş்
֬꣏Lj꣪ + ֬ş்
CMOS
TTL
֬ᩣͅ/ԵᩣϚŔ֬꣫꣪,ꢀꢁ꣬꣭ 1
֬ᩣͅ/ԵᩣϚŔ֬꣫꣪,ꢀꢁ꣬꣭ 1
֬ᩣͅ/ԵᩣϚŔ֬꣫꣪,ꢀꢁ꣬꣭ 2
֬ᩣͅ/ԵᩣϚŔ֬꣫꣪,ꢀꢁ꣬꣭ 2
֭֬Lj꣪ + ֬ş்
CMOS
TTL
FAN3223C
FAN3223T
FAN3224C
FAN3224T
FAN3225C
FAN3225T
֬4 A
֬4 A
֬4 A
֬4 A
֬4 A
֬4 A
CMOS
TTL
֭֬Lj꣪ + ֬ş்
CMOS
TTL
֬꣏Lj꣪ + ֬ş்
֬꣏Lj꣪ + ֬ş்
CMOS
TTL
֬ᩣͅ/ԵᩣϚŔ֬꣪
֬ᩣͅ/ԵᩣϚŔ֬꣪
12. OUT = 6 V, V = 12 V ៖Ŕ꣧͘ꢔἡ。
DD
MillerDrive is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
www.onsemi.cn
17
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN6 2x2, 0.65P
CASE 511CY
ISSUE O
DATE 31 JUL 2016
0.05
C
2.0
A
1.72
1.68
2X
B
4
6
0.15
2.0
1.21
0.90
2.25
0.52(6X)
0.05
C
1
3
PIN#1 IDENT
TOP VIEW
2X
0.42(6X)
0.65
RECOMMENDED
LAND PATTERN
0.75 0.05
0.10
C
0.20 0.05
NOTES:
0.08
C
SIDE VIEW
C
0.025 0.025
A. PACKAGE DOES NOT FULLY CONFORM
TO JEDEC MO−229 REGISTRATION
SEATING
PLANE
B. DIMENSIONS ARE IN MILLIMETERS.
2.00 0.05
1.40 0.05
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 2009.
(0.70)
D. LAND PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
PIN #1 IDENT
(0.20)4X
1
3
0.32 0.05
(6X)
(0.40)
0.80 0.05
(0.60)
6
4
0.30 0.05
(6X)
C
0.65
0.10
0.05
A
B
1.30
C
BOTTOM VIEW
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13613G
WDFN6 2X2, 0.65P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23, 5 Lead
CASE 527AH
ISSUE A
DATE 09 JUN 2021
q
q
q
q
q
q1
q2
GENERIC
MARKING DIAGRAM*
XXXM
XXX = Specific Device Code
M
= Date Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON34320E
SOT−23, 5 LEAD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
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Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
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