FAN7527BN [ONSEMI]
CrCM PFC 控制器;
| 型号： | FAN7527BN |
| 厂家： | 
ONSEMI |
| 描述： | CrCM PFC 控制器 控制器 功率因数校正 光电二极管 |
| 文件： | 总12页 (文件大小：1054K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Power Factor Correction
Controller
FAN7527B
Description
PDIP8 9.42x6.38, 2.54P
CASE 646CM
SOIC8
CASE 751EB
The FAN7527B provides simple and high−performance active
Power Factor Correction (PFC). The FAN7527B is optimized for
electronic ballasts and low–power, high−density power supplies that
require minimum board size, reduced external components, and low
power dissipation. Because the R/C filter is included in the
current−sense block, an external R/C filter is not necessary. Special
circuitry prevents no−load runaway conditions. Regardless of the
supply voltage, the output drive clamping circuit limits the overshoot
of the power MOSFET gate drive, which improves system reliability.
MARKING DIAGRAM
$Y&Z&2&K
xxxx
$Y&Z&2&K
xxxx
Features
• Internal Startup Timer
$Y
&Z
&2
&K
xxxx
= onsemi Logo
= Assembly Plant Code
= 2−Digit Date Code
= Lot Run Traceability Code
= Specific Device Code
• Internal R/C Filter Eliminates the Need for External R/C Filter
• Precise Adjustable Output Over−Voltage Protection
• Zero Current Detector
• One Quadrant Multiplier
ORDERING INFORMATION
• Trimmed 1.5% Internal Band Gap Reference
• Under−Voltage Lockout with 3 V of Hysteresis
• Totem−Pole Output with High−State Clamp
• Low Startup and Operating Current
• 8−Pin SOP or 8−Pin DIP
†
Device
Package
Shipping
FAN7527BN
PDIP8
3000 / Tube
(Pb−Free)
FAN7527BMX
SOIC8
(Pb−Free)
2500 / Tape &
Reel
• These Devices are Pb−Free and are RoHS Compliant
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Applications
• Electronic Ballast
• SMPS
NOTE: Operating Temperature Range of both
devices is −25 to +125°C
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
February, 2022 − Rev. 2
FAN7527B/D
FAN7527B
BLOCK DIAGRAM
Figure 1. Block Diagram
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2
FAN7527B
PIN CONFIGURATION
Figure 2. Pin Configuration
PIN DEFINITIONS
Pin #
Name
Description
INV
1
Inverting input of the error amplifier. The output of the boost converter should be resistively divided
to 2.5 V and connected to this pin.
2
3
4
EA_OUT
MULT
CS
Output of the error amplifier. Feedback compensation network is placed between this pin and the
INV pin.
Input to the multiplier stage. The full−wave rectified AC voltage is divided to less than 2 V and is
connected to this pin.
Input of the PWM comparator. The MOSFET current is sensed by a resistor and the resulting
voltage is applied to this pin. An internal R/C filter is included to reject high−frequency noise
5
6
7
Idet
GND
OUT
Zero Current Detection (ZCD) input
Ground
Gate driver output. Push−pull output stage is able to drive the power MOSFET with a peak current
of 500 mA
V
CC
8
Supply voltage of driver and control circuits
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3
FAN7527B
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Min.
Max.
30
Unit
V
VCC
IOH, IOL
ICLAMP
IDET
Supply Voltage
Peak Drive Output Current
500
10
mA
mA
mA
V
Driver Output Clamping Diodes V > V or V < −0.3 V
O
CC
O
Detector Clamping Diodes
10
VIN
Error Amplifier Multiplier and Comparator Input Voltages
Operation Junction Temperature
−0.3
6.0
T
J
+150
+125
+150
0.8
°C
TOPR
TSTG
Operating Temperature Range
−25
−65
°C
Storage Temperature Range
°C
Power Dissipation
SOIC8
PDIP8
SOIC8
PDIP8
W
P
D
1.1
W
Thermal Resistance Junction−Ambient
150
110
°C/W
°C/W
ΘJA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
TEMPERATURE CHARACTERISTICS
(−25°C ≤ T ≤ 125°C)
A
Symbol
Parameter
Temperature Stability Reference Voltage (V
Min.
Typ.
20
Max.
Unit
mV
DVREF
DK/DT
)
REF
−0.2
Temperature Stability for Multiplier Gain (K)
% / °C
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4
FAN7527B
ELECTRICAL CHARACTERISTICS
(V = 14 V, −25°C ≤ T ≤ 125°C, unless otherwise stated.)
CC
A
Symbol
UNDER−VOLTAGE LOCKOUT
Parameter
Conditions
Min.
Typ.
Max.
Unit
Vth(st)
HY(st)
Start Threshold Voltage
UVLO Hysteresis
V
CC
Increasing
10.5
2
11.5
3
12.5
4
V
V
SUPPLY CURRENT SECTION
IST
ICC
Startup Supply Current
Operating Supply Current
VCC = Vth(st) −0.2 V
10
60
3
100
6
mA
mA
mA
mA
Output Not Switching
ICC(OVP)
IDCC
Operating Current at OVP
V
INV
= 3 V
1.7
4
4.0
8
Dynamic Operating Supply Current
50 kHz, C = 1 nF
I
ERROR AMPLIFIER SECTION
VREF
Voltage Feedback Input Threshold
V
I
= 0 mA, T = 25_C
2.465
2.440
2.500
2.500
2.535
2.560
REF
A
25°C ≤ T ≤ 125°C
A
ΔVFEF1
ΔVFEF3
Line Regulation
14 V ≤ V ≤ 25 V
0.1
20
10.0
mV
CC
Temperature Stability of V
(Note 1)
REF
−25°C ≤ T ≤ 125°C
mV
mA
A
Ib(ea)
ISOURCE
ISINK
Input Bias Current
−0.5
−2
2
0.5
Output Source Current
Output Sink Current
V
V
= 4 V
= 4 V
−4
4
mA
mA
V
M2
M2
VEAO(H)
VEAO(L)
Output Upper Clamp Voltage (Note 1)
Output Lower Clamp Voltage (Note 1)
Large Signal Open−Loop Gain (Note 1)
Power Supply Rejection Ratio (Note 1)
Unity Gain Bandwidth (Note 1)
I
= 0.1 mA
6
SOURCE
I
= 0.1 mA
2.25
80
80
1
V
SINK
G
60
60
dB
V
PSRR
GBW
SR
14 V ≤ V ≤ 25 V
dB
CC
MHz
V/ms
Slew Rate (Note 1)
0.6
MULTIPLIER SECTION
Ib(m)
Input Bias Current (Pin 3)
−0.5
0.5
3.8
mA
ΔV
M1 Input Voltage Range (Pin 3)
V
M1
ΔV
M2 Input Voltage Range (Pin 2)
Multiplier Gain (Note 1)
VREF
0.36
1.65
V
+2.5
V
1 / V
V
M2
REF
K
V
V
= 1 V, V = 3.5 V
0.44
1.80
0.52
M1
M2
VOMAX(m)
Maximum Multiplier Output Voltage
= 0 V, V = 4 V
1.95
INV
M1
ΔK/ΔT
Temperature Stability of K (Note 1)
−25°C ≤ T ≤ 125°C
−0.2
% / °C
A
CURRENT SENSE SECTION
VIO(CS)
Ib(CS)
Input Offset Voltage (Note 1)
V
= 0 V, V = 2.2 V
−10
3
10
1.0
500
mV
mA
ns
M1
M2
Input Bias Current
0 V ≤ V ≤ 1.7 V
−1.0
−0.1
200
CS
tD(CS)
Current Sense Delay to Output (Note 1)
ZERO CURRENT DETECT SECTION
VTH(DET)
HY(DET)
Input Voltage Threshold
Detect Hysteresis
V
Increasing
1.7
0.2
2.0
0.5
2.3
0.8
V
V
V
V
DET
VCLAMP(I)
VCLAMP(H)
Input Low Clamp Voltage
Input High Clamp Voltage
I
I
= −100 mA
0.45
6.5
0.75
7.2
1.00
7.9
DET
= 3 mA
DET
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5
FAN7527B
ELECTRICAL CHARACTERISTICS (continued)
(V = 14 V, −25°C ≤ T ≤ 125°C, unless otherwise stated.)
CC
A
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
ZERO CURRENT DETECT SECTION
Ib(DET)
Input Bias Current
1 V ≤ V
≤ 5 V
−1.0
−0.1
1.0
3
mA
DET
ICLAMP(D)
Input High/Low Clamp Diode Current (Note 1)
mA
OUTPUT SECTION
VOH
VOL
Output Voltage High
I
I
= −10 mA
10.5
12
11.0
0.8
130
50
V
V
O
Output Voltage Low
= 10 mA
1.0
200
120
16
O
t
R
Rising Time (Note 1)
C = 1 nF
ns
ns
V
L
t
F
Falling Time (Note 1)
C = 1 nF
L
VOMAX(O)
VOMIN(O)
Maximum Output Voltage
Output Voltage with UVLO Activated
V
V
= 20 V, I = 100 mA
14
CC
CC
O
= 5 V, I = 100 mA
1
V
O
RESTART TIMER SECTION
tD(RST)
Restart Time Delay
V
M1
= 1 V, V = 3.5 V
150
ms
M2
OVER−VOLTAGE PROTECTION SECTION
ISOVP
IDOVP
VOVP
Soft OVP Detecting Current
Dynamic OVP Detecting Current
Static OVP Threshold Voltage
25
35
30
40
35
45
mA
mA
V
V
INV
= 2.7 V
2.10
2.25
2.40
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. These parameters, although guaranteed, are not 100% tested in production.
Multiplier Gain:
Pin4_Threshold
K +
ǒ
Ǔ
VM1 VM2 * VREF
where V = V
, V = V
M2 PIN2
M1
PIN3
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6
FAN7527B
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 3. Error Amplifier Output Voltage
Figure 4. Multiplier Input Voltage vs.
Current Sensing Threshold
vs. Current Sensing Threshold
Figure 5. Supply Current vs. Supply Voltage
Figure 6. Reference Voltage vs. Temperature
Figure 7. Startup Threshold vs. Temperature
Figure 8. UVLO Hysteresis vs. Temperature
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7
FAN7527B
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Figure 9. Startup Supply Current vs. Temperature
Figure 10. Error Amplifier Source Current
Figure 11. Error Amplifier Sink Current vs.
Temperature
Figure 12. Error Amplifier Input Bias Current vs.
Temperature
Figure 13. Multiplier Gain vs. Temperature
Figure 14. IDET Threshold Voltage vs. Temperature
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8
FAN7527B
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Figure 15. IDET Input Hysteresis vs. Temperature
Figure 16. Restart Time vs. Temperature
Figure 17. Maximum Multiplier Output Voltage
vs. Temperature
Figure 18. Supply Current vs. Temperature
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9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP8 9.42x6.38, 2.54P
CASE 646CM
ISSUE O
DATE 31 JUL 2016
9.83
9.00
8
1
5
6.670
6.096
4
8.255
TOP VIEW
7.610
1.65
1.27
(0.56)
7.62
3.683
3.200
5.08 MAX
3.60
3.00
0.33 MIN
0.356
0.200
15
°
0.560
0.355
°
0
2.54
9.957
7.62
FRONT VIEW
7.870
SIDE VIEW
NOTES:
A. CONFORMS TO JEDEC MS−001, VARIATION BA
B. ALL DIMENSIONS ARE IN MILLIMETERS
C. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSIONS
D. DIMENSIONS AND TOLERANCES PER ASME
Y14.5M−2009
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13468G
PDIP8 9.42X6.38, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC8
CASE 751EB
ISSUE A
DATE 24 AUG 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13735G
SOIC8
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
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