FCA47N60 [ONSEMI]
功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，47 A，70 mΩ，TO-3P;
| 型号： | FCA47N60 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，47 A，70 mΩ，TO-3P 局域网 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：1448K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2017 年9 月
FCA47N60
®
N 沟道SuperFET MOSFET
600 V, 47 A, 70 mΩ
特性
•
描述
SuperFET®MOSFET 是飞兆半导体第一代利用电荷平衡技术实
现出色低导通电阻和更低栅极电荷性能的高压超级结
(SJ)MOSFET 系列产品。这项技术专用于最小化导通损耗并提供
卓越的开关性能、dv/dt 额定值和更高雪崩能量。因此，SuperFET
MOSFET 非常适用于开关电源应用，如功率因数校正(PFC)、服
务器/ 电信电源、平板电视电源、ATX 电源及工业电源应用等。
650 V @ TJ = 150°C
• 典型值RDS(on) = 58 mΩ
• 超低栅极电荷（典型值Qg= 210 nC)
• 低有效输出电容（典型值Coss(eff.)= 420 pF)
•
100% 经过雪崩测试
应用
• 太阳能逆变器
•
AC-DC 电源
D
G
TO-3PN
G
D
S
S
绝对最大额定值
FCA47N60
FCA47N60_F109
600
符号
参数
单位
VDSS
ID
V
漏极－源极电压
漏极电流
47
29.7
A
A
- 连续(TC = 25°C)
- 连续(TC = 100°C)
IDM
A
漏极电流
- 脉冲
（注1）
141
± 30
1800
47
VGSS
EAS
IAR
V
mJ
A
栅极至源极电压
单脉冲雪崩能量
雪崩电流
（注2）
（注1）
（注1）
（注3）
EAR
dv/dt
PD
41.7
4.5
mJ
V/ns
重复雪崩能量
二极管恢复dv/dt 峰值
功耗
(TC = 25°C)
417
W
3.33
W/°C
- 高于25°C 的功耗系数
T
J, TSTG
°C
°C
工作和存储温度范围
-55 至+150
TL
300
用于焊接的最大引脚温度，距离外壳1/8”，持续5 秒
热性能
符号
RθJC
参数
结至外壳热阻最大值
典型值
最大值
单位
--
--
0.3
°C/W
°C/W
RθJA
41.7
结至环境热阻最大值
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1
©2010 飞兆半导体公司
FCA47N60 / FCA47N60_F109 Rev. 1
封装标识与定购信息
器件标识
器件
封装
卷尺寸
带宽
数量
FCA47N60
FCA47N60
FCA47N60
TO-3PN
-
-
30
FCA47N60_F109
TO-3PN
-
-
30
电气特性TC = 25°C 除非另有说明。
符号
参数
测试条件
最小值 典型值 最大值
单位
关断特性
BVDSS
VGS = 0 V, ID = 250 μA, TJ = 25°C
VGS = 0 V, ID = 250 μA, TJ = 150°C
600
--
--
--
--
V
V
漏极－源极击穿电压
650
ΔBVDSS
/ ΔTJ
击穿电压温度系数
--
--
0.6
--
--
V/°C
V
I
D = 250 μA, 参考25°C 数值
BVDS
VGS = 0 V, ID = 47 A
漏极－源极雪崩击穿电压
零栅极电压漏极电流
700
IDSS
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
--
--
--
--
1
10
μA
μA
IGSSF
IGSSR
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
--
--
--
--
100
nA
nA
栅极- 体漏电流，正向
栅极- 体漏电流，反向
-100
导通特性
VGS(th)
V
DS = VGS, ID = 250 μA
3.0
--
--
5.0
栅极阈值电压
RDS(on)
漏极－源极
导通电阻
VGS = 10 V, ID = 23.5 A
0.058
0.07
gFS
VDS = 20 V, ID = 23.5 A
VDS = VGS, ID = 250 μA
--
40
--
--
正向跨导
VGS(th)
3.0
5.0
栅极阈值电压
动态特性
Ciss
V
DS = 25 V, VGS = 0 V,
--
--
--
--
--
5900
3200
250
8000
4200
--
pF
pF
pF
pF
pF
输入电容
f = 1.0 MHz
Coss
输出电容
Crss
反向传输电容
输出电容
Coss
VDS = 480 V, VGS = 0 V, f = 1.0 MHz
160
--
Coss eff.
420
--
有效输出电容
VDS = 0 V 至400 V, VGS = 0 V
开关特性
td(on)
tr
td(off)
tf
VDD = 300 V, ID = 47 A
RG = 25 Ω
--
--
--
--
--
--
--
185
210
520
75
430
450
1100
160
270
--
ns
ns
导通延迟时间
导通上升时间
关断延迟时间
关断下降时间
总栅极电荷
ns
（注4）
（注4）
ns
Qg
VDS = 480 V, ID = 47 A
VGS=10 V
210
38
nC
nC
nC
Qgs
Qgd
栅源极电荷
110
--
栅漏极电荷
漏极- 源极二极管特性
IS
--
--
--
--
--
--
--
47
141
1.4
--
A
A
漏源极二极管最大正向连续电流
漏源极二极管最大正向脉冲电流
漏极- 源极二极管正向电压
反向恢复时间
ISM
VSD
trr
VGS = 0 V, IS = 47 A
VGS = 0 V, IS = 47 A
dIF/dt =100 A/μs
--
V
590
25
ns
μC
（注4）
Qrr
--
反向恢复电荷
注：
1. 重复额定值：脉冲宽度受限于最大结温。
2. I = 18 A, R = 25 Ω, 开始于T = 25°C
AS
G
J
3. I ≤ 47 A, di/dt ≤ 200 A/μs, V = 380 V, 开始于T = 25°C
SD
DD
J
4. 典型特性本质上独立于工作温度。
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2
©2010 飞兆半导体公司
FCA47N60 / FCA47N60_F109 Rev. 1
典型特性
图1. 导通区域特性图
2. 传输特性
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
102
101
100
102
Bottom : 5.5 V
150∩
101
25∩
-55∩
∝ Notes :
1. 250レs Pulse Test
2. TC = 25∩
∝ Note
1. VDS = 40V
2. 250レs Pulse Test
100
10-1
100
101
2
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
图3. 导通电阻变化与漏极电流和栅极电压的关系
图4. 体二极管正向电压变化与源电流和温度的关系
0.20
102
101
0.15
VGS = 10V
0.10
VGS = 20V
150∩
25∩
0.05
∝ Notes :
1. VGS = 0V
2. 250レs Pulse Test
100
0.2
∝ Note : T = 25∩
J
0.00
0
20
40
60
80
100
120
140
160
180
200
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
图5. 电容特性
图6. 栅极电荷特性
30000
12
Ciss = Cgs + Cgd (Cds = shorted)
oss = Cds + Cgd
Crss = Cgd
VDS = 100V
VDS = 250V
VDS = 400V
C
25000
20000
15000
10000
5000
10
8
Coss
6
∝ Notes :
1. VGS = 0 V
2. f = 1 MHz
C
iss
4
Crss
2
∝ Note : ID = 47A
0
0
10-1
100
101
0
50
100
150
200
250
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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3
©2010 飞兆半导体公司
FCA47N60 / FCA47N60_F109 Rev. 1
典型特性 （接上页）
图7. 击穿电压变化与温度的关系
图8.导通电阻变化与温度的关系
3.0
1.2
2.5
2.0
1.5
1.0
0.5
0.0
1.1
1.0
0.9
0.8
∝ Notes :
1. VGS = 0 V
2. ID = 250 レA
∝ Notes :
1. VGS = 10 V
2. ID = 47 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
图9. 最大安全工作区与壳温的关系
图10. 最大漏极电流
50
Operation in This Area
is Limited by R DS(on)
102
101
100 us
1 ms
40
30
20
10
0
10 ms
DC
100
10-1
10-2
∝ Notes :
1. TC = 25 o
2. TJ = 150 o
3. Single Pulse
C
C
100
101
102
103
25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [∩ ]
图11. 瞬态热响应曲线
D = 0.5
1 0-1
∝
N otes
:
1. Z ヨ (t)
=
0.3
∩
/W M ax.
0.2
JC
2. D u ty F acto r, D = t1/t2
3. T JM T C P D M Z ヨ (t)
-
=
*
JC
0.1
PDM
0.05
0.02
t1
t2
1 0-2
0.01
single pulse
10 -3
10-5
1 0-4
10-2
10-1
100
10 1
t1, S q uare W ave P ulse D uration [sec]
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©2010 飞兆半导体公司
FCA47N60 / FCA47N60_F109 Rev. 1
图12. 栅极电荷测试电路与波形
图13. 阻性开关测试电路与波形
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
图14. 非箝位感性开关测试电路与波形
VGS
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5
©2010 飞兆半导体公司
FCA47N60 / FCA47N60_F109 Rev. 1
图15. 峰值二极管恢复dv/dt 测试电路与波形
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
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©2010 飞兆半导体公司
FCA47N60 / FCA47N60_F109 Rev. 1
机械尺寸
TO-3PN 3L
图16. TO3，3 引脚、塑料，EIAJ SC-65
封装图纸是作为一项服务提供给考虑飞兆半导体元件的客户的。图纸可能会在没有任何通知的情况下做出一些改动。请注意图纸上的版
本或日期，如有疑问，请联系飞兆半导体代表核实或获得最新版本。封装规格说明并不扩大飞兆半导体全球范围内的条款与条件，尤其
是其中涉及飞兆半导体产品保修的部分。
随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3P0-003
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©2010 飞兆半导体公司
FCA47N60 / FCA47N60_F109 Rev. 1
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intended to be an exhaustive list of all such trademarks.
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Sync-Lock™
®*
®
®
®
®
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GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
Gmax™
GTO™
TinyCalc™
®
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TINYOPTO™
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TranSiC™
TriFault Detect™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
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®
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Saving our world, 1mW/W/kW at a time™
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®
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Datasheet contains the design specifications for product development. Specifications
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Datasheet contains preliminary data; supplementary data will be published at a later
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Not In Production
Rev. I66
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©2010 飞兆半导体公司
FCA47N60 / FCA47N60_F109 Rev. 1
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