FCB110N65F [ONSEMI]
功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，650 V，35 A，110 mΩ，D2-PAK;
| 型号： | FCB110N65F |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，650 V，35 A，110 mΩ，D2-PAK |
| 文件： | 总10页 (文件大小：803K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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August 2016
FCB110N65F
N-Channel SuperFET II FRFET MOSFET
®
®
650 V, 35 A, 110 mΩ
Features
Description
•
•
•
•
•
•
700 V @TJ = 150°C
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance.
Typ. RDS(on) = 96 mΩ (Typ.)
Ultra Low Gate Charge (Typ. Qg = 98 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 464 pF)
100% Avalanche Tested
SuperFET® II FRFET® MOSFET combines a faster and more
rugged intrinsic body diode performance with fast switching,
aimed at achieving better reliability and efficiency especially in
resonant switching applications.
RoHS Compliant
SuperFET® II FRFET® is very suitable for the switching power
applications such as server/telecom power, Solar inverter, FPD
TV power, computing power, lighting and industrial power appli-
cations.
Applications
•
•
Telecom/Server Power Supplies • Solar Inverters
Computing Power Supplies
•
FPD TV Power/Lighting
D
D
G
G
D2-PAK
S
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
Parameter
FCB110N65F
Unit
Drain to Source Voltage
Gate to Source Voltage
650
±20
V
- DC
VGSS
ID
V
A
- AC
±30
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
35
Drain Current
24
IDM
EAS
IAR
Drain Current
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
105
A
mJ
A
Single Pulsed Avalanche Energy
Avalanche Current
809
8
EAR
Repetitive Avalanche Energy
MOSFET dv/dt
3.57
100
mJ
dv/dt
PD
V/ns
Peak Diode Recovery dv/dt
50
(TC = 25oC)
- Derate Above 25oC
357
W
W/oC
oC
Power Dissipation
2.86
-55 to +150
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
300
oC
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction to Case
Unit
FCB110N65F
RθJC
0.35
62.5
40
Thermal Resistance, Junction to Ambient (Mimimum Pad of 2-oz copper), Max.
Thermal Resistance, Junction to Ambient (1 in2 Pad of 2-oz copper), Max.
oC/W
RθJA
www.fairchildsemi.com
1
©2015 Fairchild Semiconductor Corporation
FCB110N65F Rev. 1.1
Package Marking and Ordering Information
Part Number
Top Mark
Package
D2-PAK
Packing Method
Reel Size
Tape Width
Tape Width
FCB110N65F
FCB110N65F
Tape and Reel
330 mm
24 mm
800 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
I
D = 10 mA, VGS = 0 V, TJ = 25°C
650
700
-
-
-
-
V
V
BVDSS
Drain to Source Breakdown Voltage
ID = 10 mA, VGS = 0 V, TJ = 150°C
ΔBVDSS / ΔTJ Breakdown Voltage Temperature
I
D = 10 mA, Referenced to 25oC
DS = 650 V, VGS = 0 V
-
0.72
-
V/oC
Coefficient
V
-
-
-
-
110
-
10
-
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μA
VDS = 520 V, VGS = 0 V, TC = 125oC
VGS = ±20 V, VDS = 0 V
±100
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 3.5 mA
VGS = 10 V, ID = 17.5 A
VDS = 20 V, ID = 17.5 A
3
-
-
5
110
-
V
mΩ
S
Static Drain to Source On Resistance
Forward Transconductance
96
30
-
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
-
3680
110
0.65
65
4895
pF
pF
pF
pF
pF
nC
nC
nC
Ω
VDS = 100 V, VGS = 0 V,
f = 1 MHz
Coss
Crss
Output Capacitance
145
Reverse Transfer Capacitance
Output Capacitance
-
Coss
Coss eff.
Qg(tot)
Qgs
VDS = 380 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 400 V, VGS = 0 V
-
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
464
98
-
145
V
V
DS = 380 V, ID = 17.5 A,
GS = 10 V
20
-
-
-
(Note 4)
Qgd
43
ESR
f = 1 MHz
0.7
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
31
21
89
5.7
72
52
ns
ns
ns
ns
VDD = 380 V, ID = 17.5 A,
V
GS = 10 V, Rg = 4.7 Ω
188
21
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
35
100
1.4
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, ISD = 17.5 A
-
V
133
0.67
ns
μC
V
GS = 0 V, ISD = 17.5 A,
dIF/dt = 100 A/μs
Qrr
Reverse Recovery Charge
-
Notes:
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. I = 8 A, R = 25 Ω, starting T = 25°C.
AS
G
J
3. I ≤ 17.5 A, di/dt ≤ 200 A/μs, V ≤ 380 V, starting T = 25°C.
SD
DD
J
4. Essentially independent of operating temperature typical characteristics.
©2015 Fairchild Semiconductor Corporation
FCB110N65F Rev. 1.1
www.fairchildsemi.com
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
200
200
VGS = 10.0V
*Notes:
1. VDS = 20V
8.0V
100
100
7.0V
6.5V
6.0V
5.5V
2. 250μs Pulse Test
150oC
10
10
25oC
-55oC
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
1
0.3
3
4
5
6
7
8
1
10
20
VGS, Gate-Source Voltage[V]
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
200
100
0.25
10
0.20
150oC
1
0.15
25oC
VGS = 10V
0.1
0.10
VGS = 20V
0.01
*Notes:
1. VGS = 0V
*Note: TC = 25oC
60 80
ID, Drain Current [A]
2. 250μs Pulse Test
0.001
0.05
0
20
40
100
0.0
0.3
0.6
0.9
1.2
1.5
1.8
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
100000
10
*Note: ID = 17.5A
VDS = 130V
10000
1000
100
10
Ciss
Coss
Crss
8
VDS = 325V
VDS = 520V
6
4
2
0
*Note:
1. VGS = 0V
2. f = 1MHz
C
C
C
= C + C (C = shorted)
gs gd ds
iss
1
= C + C
ds gd
oss
rss
= C
gd
0.1
0.1
1
10
100
660
0
20
40
60
80
100
VDS, Drain-Source Voltage [V]
Qg, Total Gate Charge [nC]
©2015 Fairchild Semiconductor Corporation
FCB110N65F Rev. 1.1
www.fairchildsemi.com
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2.5
1.15
*Notes:
1. VGS = 10V
*Notes:
1. VGS = 0V
2. ID = 17.5A
2.0
2. ID = 10mA
1.10
1.05
1.00
0.95
0.90
1.5
1.0
0.5
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
40
30
20
10
0
300
100
10μs
100μs
10
1ms
DC
Operation in This Area
is Limited by R DS(on)
1
*Notes:
1. TC = 25oC
2. TJ = 150oC
0.1
3. Single Pulse
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 11. Eoss vs. Drain to Source Voltage
Switching Capability
20
16
12
8
4
0
0
132
264
396
528
660
VDS, Drain to Source Voltage [V]
©2015 Fairchild Semiconductor Corporation
FCB110N65F Rev. 1.1
www.fairchildsemi.com
4
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
1
0.1
0.5
0.2
PDM
0.1
t1
0.05
t2
0.02
0.01
0.01
*Notes:
1. ZθJC(t) = 0.35oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.001
10-5
10-4
10-3
t1, Rectangular Pulse Duration [sec]
10-2
10-1
1
©2015 Fairchild Semiconductor Corporation
FCB110N65F Rev. 1.1
5
www.fairchildsemi.com
I
= const.
G
Figure 13. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 14. Resistive Switching Test Circuit & Waveforms
VGS
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
©2015 Fairchild Semiconductor Corporation
FCB110N65F Rev. 1.1
www.fairchildsemi.com
6
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2015 Fairchild Semiconductor Corporation
FCB110N65F Rev. 1.1
www.fairchildsemi.com
7
10.67
9.65
10.67
-A-
1.68
1.00
4
4
9.45
9.65
8.38
10.00
1.78 MAX
2
0.25 MAX
2
3.80
PLASTIC BODY
STUB
1
3
1
3
1.78
1.14
(2.12)
1.05
5.08
0.99
0.51
M
M
B A
0.25
LAND PATTERN RECOMMENDATION
UNLESS NOTED, ALL DIMS TYPICAL
5.08
FRONT VIEW - DIODE PRODUCTS VERSION
ALTERNATIVE SUPPLIER DETAIL
-B-
4.83
4.06
6.22 MIN
1.65
1.14
4
4
6.86 MIN
15.88
14.61
SEE
DETAIL A
2
2
3
1
3
1
BACK VIEW - DIODE PRODUCTS VERSION
ALTERNATIVE SUPPLIER DETAIL
NOTES: UNLESS OTHERWISE SPECIFIED
A) ALL DIMENSIONS ARE IN MILLIMETERS.
B) REFERENCE JEDEC, TO-263, VARIATION AB.
C) DIMENSIONING AND TOLERANCING PER
DIMENSIONING AND TOLERANCING PER
ASME Y14.5 - 2009.
D) LOCATION OF THE PIN HOLE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE).
GAGE PLANE
0.74
0.25
0.33
ꢄ
ꢃ
E) LANDPATTERN RECOMMENDATION PER IPC
TO254P1524X482-3N
0.10
B
F) FILENAME: TO263A02REV8
2.79
1.78
ꢄ
ꢃ
0.25 MAX
(5.38)
SEATING
PLANE
'(7$,/ꢀ$ꢁꢀ527$7('ꢀꢂꢃ
SCALE: 2X
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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