FCB20N60-F085 [ONSEMI]
600 V、20 A、173 mΩ、D2PAKN 沟道 SuperFET™;
| 型号： | FCB20N60-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 600 V、20 A、173 mΩ、D2PAKN 沟道 SuperFET™ 开关 晶体管 |
| 文件： | 总7页 (文件大小：515K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FCB20N60-F085
N-Channel MOSFET
600V, 20A, 198mΩ
D
D
Features
Typ r
= 173mΩ at V = 10V, I = 20A
GS D
DS(on)
Typ Q
= 72nC at V = 10V, I = 20A
GS D
g(tot)
G
UIS Capability
RoHS Compliant
Qualified to AEC Q101
G
S
S
Description
TM
SuperFET is ON Semiconductor’s proprietary new
generation of high voltage MOSFETs utilizing an advanced
charge balance mechanism for outstanding low on-resistance
and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is suitable for various automotive
DC/DC power conversion.
Applications
Automotive On Board Charger
Automotive DC/DC converter for HEV
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
VDSS
Parameter
Ratings
600
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
VGS
±30
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
TC = 25°C
TC = 25°C
20
ID
A
See Figure4
EAS
PD
Single Pulse Avalanche Energy
(Note 2)
(Note 3)
480
341
mJ
W
W/oC
oC
oC/W
oC/W
Power Dissipation
Derate above 25oC
2.3
TJ, TSTG Operating and Storage Temperature
-55 to + 150
0.44
RθJC
RθJA
Thermal Resistance Junction to Case
Maximum Thermal Resistance Junction to Ambient
43
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FCB20N60
FCB20N60-F085
TO-263AB
330mm
24mm
800 units
Notes:
1: Current is limited by bondwire configuration.
2: Starting T = 25°C, L = 15mH, I = 8A, V = 100V during inductor charging and V = 0V during time in avalanche
J
AS
DD
DD
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. RθJC is guaranteed by design while RθJAis determined by the user's board design. The maximum rating
2
presented here is based on mounting on a 1 in pad of 2oz copper.
©2013 Semiconductor Components Industries, LLC.
September-2017, Rev. 3
Publication Order Number:
FCB20N60-F085/D
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
IDSS
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
600
-
-
-
-
-
1
V
V
DS=600V, TJ = 25oC
-
-
-
μA
mA
nA
VGS = 0V
TJ = 150oC(Note 4)
1
IGSS
VGS = ±30V
±100
On Characteristics
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VGS = VDS, ID = 250μA
3.0
4.0
173
471
5.0
198
570
V
TJ = 25oC
-
-
mΩ
mΩ
ID = 20A,
TJ = 150oC(Note 4)
V
GS= 10V
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
2710
1350
86
3080
1665
150
-
pF
pF
pF
Ω
V
DS = 25V, VGS = 0V,
Coss
Crss
Rg
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz
1
Qg(ToT)
Qg(th)
Qgs
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
VGS = 0 to 10V
VGS = 0 to 2V
72
102
8.6
-
nC
nC
nC
nC
VDD = 300V
ID = 20A
5
15
Qgd
31
-
Switching Characteristics
ton
td(on)
tr
Turn-On Time
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
44
60
208
43
-
166
ns
ns
ns
ns
ns
ns
-
-
V
DD = 300V, ID = 20A,
VGS = 10V, RG = 25Ω
td(off)
tf
Turn-Off Delay Time
Fall Time
-
-
toff
Turn-Off Time
400
Drain-Source Diode Characteristics
VSD
Trr
Source to Drain Diode Voltage
Reverse Recovery Time
ISD = 20A, VGS = 0V
-
-
-
-
1.4
632
13
V
486
10
ns
μC
IF = 20A, dISD/dt = 100A/μs,
VDD=480V
Qrr
Reverse Recovery Charge
Notes:
4: The maximum value is specified by design at T = 150°C. Product is not tested to this condition in production.
J
www.onsemi.com
2
Typical Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0.0
30
25
20
15
10
5
CURRENT LIMITED
BY PACKAGE
CURRENT LIMITED
BY SILICON
VGS = 10V
0
0
25
50
75
100
125
150
25
50
75
100
125
150
TC, CASE TEMPERATURE(oC)
TC, CASE TEMPERATURE(oC)
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 1. Normalized Power Dissipation vs Case
Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
P
DM
0.10
0.05
0.02
0.01
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
PEAK T = P
x Z
x R
+ T
J
DM
θJA
θJA C
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
200
VGS = 10V
100
10
1
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
150 - TC
I = I2
125
SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
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3
Typical Characteristics
100
10
1
100
10
1
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VDD = 20V
100us
TJ = 150oC
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
TJ = -55oC
10ms
100ms
0.1
SINGLE PULSE
TJ = 25oC
T
J
= MAX RATED
o
T
C
= 25
C
0.01
4
6
8
10
1
10
100
1000
VGS, GATE TO SOURCE VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
Figure 6. Transfer Characteristics
100
100
VGS
15V Top
VGS = 0 V
10V
8V
7V
6.5V
6V
TJ = 150 o
C
5.5V Bottom
TJ = 25 o
C
10
10
5.5V
80μs PULSE WIDTH
TJ = 25 o
C
1
0.1
1
0.0
1
10
20
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VDS, DRAIN TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Forward Diode Characteristics
Figure 8. Saturation Characteristics
100
1000
800
600
400
200
0
ID = 20A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VGS
15V Top
10V
8V
7V
6.5V
6V
TJ = 150oC
5.5V Bottom
10
5.5V
TJ = 25oC
80μs PULSE WIDTH
TJ = 150 o
C
1
0.1
1
10
20
5
6
7
8
9
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
Figure 10. Rdson vs Gate Voltage
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4
Typical Characteristics
3.2
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VGS = VDS
= 250μA
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
2.8
2.4
2.0
1.6
1.2
0.8
0.4
I
D
ID = 20A
VGS = 10V
-80
-40
0
40
80
120
160
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
TJ, JUNCTION TEMPERATURE(oC)
Figure 11. Normalized Rdson vs Junction
Temperature
Figure 12. Normalized Gate Threshold Voltage vs
Temperature
1.2
10000
ID = 1mA
Ciss
1.1
1.0
0.9
0.8
1000
Coss
100
10
f = 1MHz
GS = 0V
Crss
V
1
0.1
-80
-40
0
40
80
120
160
1
10
100
TJ, JUNCTION TEMPERATURE (oC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 14. Capacitance vs Drain to Source
Voltage
10
ID = 20A
VDD = 240V
8
VDD = 300V
VDD = 360V
6
4
2
0
0
20
40
60
80
Qg, GATE CHARGE(nC)
Figure 15. Gate Charge vs Gate to Source Voltage
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5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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