FCB20N60TM [ONSEMI]

功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，20 A，190 mΩ，D2PAK;


型号：	FCB20N60TM
厂家：	ONSEMI
描述：	功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，20 A，190 mΩ，D2PAK 开关脉冲晶体管
文件：	总9页 (文件大小：440K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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October 2013

FCB20N60

N-Channel SuperFET MOSFET

600 V, 20 A, 190 mΩ

Features

Description

•

650 V @T_J= 150 °C

SuperFET^®MOSFET is Fairchild Semiconductor’s first genera-

tion of high voltage super-junction (SJ) MOSFET family that is

utilizing charge balance technology for outstanding low on-

resistance and lower gate charge performance. This technology

is tailored to minimize conduction loss, provide superior switch-

ing performance, dv/dt rate and higher avalanche energy. Con-

sequently, SuperFET MOSFET is very suitable for the switching

power applications such as PFC, server/telecom power, FPD

TV power, ATX power and industrial power applications.

Typ. R_DS(on)= 150 m

Ultra Low Gate Charge (Typ. Q_g= 75 nC)

Low Effective Output Capacitance (Typ. C_oss.eff = 165 pF)

100% Avalanche Tested

RoHS Compliant

Application

•

Lighting

•

AC-DC Power Supply

Solar Inverter

D²-PAK

MOSFET Maximum Ratings T_C= 25^oC unless otherwise noted

Symbol

V_DSS

Parameter

FCB20N60TM

Unit

Drain to Source Voltage

Drain Current

600

- Continuous (T_C= 25^oC)

- Continuous (T_C= 100^oC)

- Pulsed

I_D

12.5

60.0

±30

I_DM

Drain Current

(Note 1)

V_GSS

E_AS

I_AR

Gate to Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

(Note 2)

(Note 1)

(Note 3)

690

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

20.8

4.5

V/ns

W/^oC

^oC

(T_C= 25^oC)

- Derate above 25^oC

208

P_D

Power Dissipation

1.67

-55 to +150

T_J, T_STG

T_L

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

^oC

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction to Case, Max

FCB20N60TM

Unit

R_JC

0.6

62.5

Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.

Thermal Resistance, Junction to Ambient (1 in²pad of 2 oz copper), Max.

^oC/W

R_JA

www.fairchildsemi.com

FCB20N60 Rev. C1

Package Marking and Ordering Information

Device Marking

Device

Package

D²-PAK

Reel Size

Tape Width

Quantity

FCB20N60

FCB20N60TM

330mm

24m

800

Electrical Characteristics T_C= 25^oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Off Characteristics

_GS= 0 V,I_D= 250 A, T_C= 25^oC

V_GS= 0 V,I_D= 250 A, T_C= 150^oC

600

BV_DSS

Drain to Source Breakdown Voltage

650

BV_DSS

/ T_J

BV_DS

Breakdown Voltage Temperature

Coefficient

_D= 250 A, Referenced to 25^oC

0.6

V/^oC

Drain-Source Avalanche Breakdown

Voltage

_GS= 0 V, I_D= 20 A

700

_DS= 600 V, V_GS= 0 V

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate to Body Leakage Current

A

V_DS= 480 V, V_GS= 0 V, T_C= 125^oC

V_GS= ±30 V, V_DS= 0 V

±100

On Characteristics

V_GS(th)

R_DS(on)

g_FS

Gate Threshold Voltage

V_GS= V_DS, I_D= 250 A

3.0

5.0

0.19



Static Drain to Source On Resistance

Forward Transconductance

V_GS= 10 V, I_D= 10 A

0.15

_DS= 40 V, I_D= 10 A

Dynamic Characteristics

C_iss

Input Capacitance

2370

1280

3080

V_DS= 25 V, V_GS= 0 V

f = 1.0 MHz

C_oss

C_rss

Output Capacitance

1665

Reverse Transfer Capacitance

Output Capacitance

C_oss

C_osseff.

V_DS= 480 V, V_GS= 0 V, f = 1.0 MHz

V_DS= 0 V to 400 V, V_GS= 0 V

Effective Output Capacitance

165

Switching Characteristics

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

140

230

135

290

470

140

V_DD= 300 V, I_D= 20 A

Turn-On Rise Time

_G= 25 

Turn-Off Delay Time

Turn-Off Fall Time

(Note 4)

Q_g(tot)

Q_gs

Q_gd

Total Gate Charge at 10V

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

_DS= 480 V, I_D= 20 A,

_GS= 10 V

13.5

Drain-Source Diode Characteristics

I_S

Maximum Continuous Drain to Source Diode Forward Current

Maximum Pulsed Drain to Source Diode Forward Current

1.4

I_SM

V_SD

t_rr

Drain to Source Diode Forward Voltage

Reverse Recovery Time

V_GS= 0 V, I_SD= 20 A

530

10.5

C

_GS= 0 V, I_SD= 20 A

dI_F/dt = 100 A/s

Q_rr

Reverse Recovery Charge

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. I = 10 A, V = 50 V, R = 25 , Starting T = 25C

3. I  20 A, di/dt  200 A/s, V  BV

, Starting T = 25C

DSS

4. Essentially Independent of Operating Temperature Typical Characteristics

www.fairchildsemi.com

FCB20N60 Rev. C1

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

10²

V_GS

10²

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

10¹Bottom : 5.5 V

150C

10¹

25C

-55C

10⁰

Note

1. V_DS= 40V

Notes :

1. 250s Pulse Test

2. T_C= 25C

2. 250s Pulse Test

10^-1

10⁰

10¹

V_GS, Gate-Source Voltage [V]

V_DS, Drain-Source Voltage [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperatue

10²

0.4

0.3

V_GS= 10V

10¹

0.2

V_GS= 20V

150C

25C

10⁰

0.1

Notes :

1. V_GS= 0V

2. 250s Pulse Test

Note : T_J= 25C

0.0

10 15 20 25 30 35 40 45 50 55 60 65 70

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

V_SD, Source-Drain Voltage [V]

I_D, Drain Current [A]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

10000

C_iss= C_gs+ C_gd(C_ds= shorted)

V_DS= 100V

C_oss= C_ds+ C_gd

C_rss= C_gd

9000

8000

7000

6000

5000

4000

3000

2000

1000

V_DS= 250V

V_DS= 400V

C_oss

Notes :

1. V_GS= 0 V

C_iss

2. f = 1 MHz

C_rss

Note : I_D= 20A

10^-1

10⁰

10¹

Q_G, Total Gate Charge [nC]

V_DS, Drain-Source Voltage [V]

www.fairchildsemi.com

FCB20N60 Rev. C1

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

3.0

2.5

2.0

1.5

1.0

0.5

0.0

1.2

1.1

1.0

Notes :

1. V_GS= 0 V

0.9

0.8

Notes :

1. V_GS= 10 V

2. I_D= 250A

2. I_D= 20 A

-100

-50

100

150

200

-100

-50

100

150

200

T_J, Junction Temperature [C]

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs. Case Temperature

Operation in This Area

is Limited by R _DS(on)

10²

100 us

10¹

1 ms

10 ms

10⁰

Notes :

1. T_C= 25C

10^-1

2. T_J= 150C

3. Single Pulse

10^-2

10⁰

10¹

10²

10³

100

125

150

V_DS, Drain-Source Voltage [V]

T_C, Case Temperature [C]

Figure 11. Transient Thermal Response Curve

10⁰

10^-1

10^-2

D =0.5

N otes

0.2

1. Z_{ JC}(t) = 0.6 C /W M ax.

2. D uty Factor, D =t₁/t₂

0.1

3. T_JM- T_C

= P_DM* Z_JC(t)

0.05

P_DM

0.02

0.01

t₁

t₂

single pulse

10^-3

10^-5

10^-4

10^-2

10^-1

10⁰

10¹

t₁, Square W ave Pulse Duration [sec]

www.fairchildsemi.com

FCB20N60 Rev. C1

Figure 12. Gate Charge Test Circuit & Waveform

V_GS

Same Type

50KΩ

as DUT

Q_g

12V

200nF

10V

300nF

V_DS

V_GS

Q_gs

Q_gd

DUT

= const.

3mA

Charge

Figure 13. Resistive Switching Test Circuit & Waveforms

R_L

V_DS

90%

V_DS

V_DD

V_GS

R_G

10%

V_GS

DUT

10V

t_d(on)

t_r

t_d(off)

t_f

t _on

t _off

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

BV_DSS

--------------------

BV_DSS- V_DD

----

E_AS

L I_AS

V_DS

I _D

BV_DSS

I_AS

R_G

V_DD

I_D(t)

V_DS(t)

V_DD

DUT

1_G0V_S

t _p

Time

www.fairchildsemi.com

FCB20N60 Rev. C1

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

V_DS

I _SD

Driver

R_G

Same Type

as DUT

V_DD

V_GS

• dv/dt controlled by R_G

• I_SDcontrolled by pulse period

Gate Pulse Width

--------------------------

V_GS

D =

Gate Pulse Period

10V

( Driver )

I_FM, Body Diode Forward Current

I _SD

di/dt

( DUT )

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_SD

V_DS

( DUT )

V_DD

Body Diode

Forward Voltage Drop

www.fairchildsemi.com

FCB20N60 Rev. C1

Mechanical Dimensions

TO-263 2L (D²PAK)

Figure 16. 2LD,TO263, Surface Mount

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or

obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-

ically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002

Dimension in Millimeters

www.fairchildsemi.com

FCB20N60 Rev. C1

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

AccuPower™

AX-CAP *

BitSiC™

Build it Now™

CorePLUS™

CorePOWER™

CROSSVOLT™

CTL™

F-PFS™

FRFET

Sync-Lock™

®*

Global Power Resource^SM

GreenBridge™

Green FPS™

PowerTrench

PowerXS™

Programmable Active Droop™

QFET

QS™

Quiet Series™

RapidConfigure™

™

TinyBoost

TinyBuck

Green FPS™ e-Series™

Gmax™

GTO™

TinyCalc™

TinyLogic

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

TranSiC™

TriFault Detect™

Current Transfer Logic™

IntelliMAX™

DEUXPEED

ISOPLANAR™

Marking Small Speakers Sound Louder

and Better™

MegaBuck™

MICROCOUPLER™

MicroFET™

MicroPak™

MicroPak2™

MillerDrive™

MotionMax™

Dual Cool™

EcoSPARK

Saving our world, 1mW/W/kW at a time™

SignalWise™

SmartMax™

EfficentMax™

ESBC™

TRUECURRENT *

SerDes™

SMART START™

Solutions for Your Success™

SPM

Fairchild

STEALTH™

SuperFET

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

Fairchild Semiconductor

FACT Quiet Series™

UHC

Ultra FRFET™

UniFET™

VCX™

VisualMax™

VoltagePlus™

XS™

mWSaver

OptoHiT™

OPTOLOGIC

OPTOPLANAR

FACT

FAST

FastvCore™

FETBench™

FPS™

SupreMOS

SyncFET™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.

Advance Information

Formative / In Design

Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without

notice to improve design.

Preliminary

First Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.

No Identification Needed

Obsolete

Full Production

Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.

Not In Production

Rev. I66

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FCB20N60 Rev. C1

FCB20N60TM [ONSEMI]

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