FCD360N65S3R0 [ONSEMI]
功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，10 A，360 mΩ，DPAK;
| 型号： | FCD360N65S3R0 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，10 A，360 mΩ，DPAK |
| 文件： | 总10页 (文件大小：460K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FCD360N65S3R0
MOSFET – Power, N-Channel,
SUPERFET III, Easy Drive
650 V, 10 A, 360 mW
Description
www.onsemi.com
SUPERFETIII MOSFET is ON Semiconductor’s brand−new high
voltage super- junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
360 mW @ 10 V
10 A
Consequently, SUPERFET III MOSFET Easy drive series helps
manage EMI issues and allows for easier design implementation.
D
Features
• 700 V @ T = 150_C
J
G
• Typ. R
= 310 mW
DS(on)
• Ultra Low Gate Charge (Typ. Q = 18 nC)
g
• Low Effective Output Capacitance (Typ. C
• 100% Avalanche Tested
= 173 pF)
oss(eff.)
S
D
• These Devices are Pb−Free and are RoHS Compliant
Applications
G
• Computing / Display Power Supplies
• Telecom / Server Power Supplies
• Industrial Power Supplies
S
D−PAK
TO−252
CASE 369AS
• Lighting / Charger / Adapter
MARKING DIAGRAM
$Y&Z&3&K
FCD360
N65S3R0
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
FCD360N65S3R0 = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2
of this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
August, 2019 − Rev. 5
FCD360N65S3R0/D
FCD360N65S3R0
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
C
Symbol
Parameter
Value
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
650
− DC
30
V
− AC (f > 1 Hz)
30
V
I
D
Drain Current:
− Continuous (T = 25°C)
10
A
C
− Continuous (T = 100°C)
6
25
C
I
Drain Current:
− Pulsed (Note 1)
A
mJ
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
40
AS
AS
I
2.1
E
0.83
100
mJ
V/ns
AR
dv/dt
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
20
P
(T = 25°C)
83
W
W/°C
°C
D
C
Derate Above 25°C
0.67
−55 to +150
300
T , T
Operating and Storage Temperature Range
J
STG
T
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I = 2.1 A, R = 25 W, starting T = 25 _C.
AS
G
J
3. I ≤ 5 A, di/dt ≤ 200 A/mS, V ≤ 400 V, starting T = 25 _C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
1.5
Unit
R
R
Thermal Resistance, Junction to Case, Max.
_C/W
q
JC
JA
Thermal Resistance, Junction to Ambient, Max. Note 4)
52
q
2
4. Device on 1 in pad 2 oz copper pad on 1.5 x 1.5 in. board of FR−4 material.
PACKAGE MARKING AND ORDERING INFORMATION
†
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
16 mm
Quantity
FCD360N65S3R0 FCD360N65S3R0
TO−252
Tape and Reel
330 mm
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
FCD360N65S3R0
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
650
700
−
−
−
−
−
−
V
V
V
V
I
= 0 V, I = 1 mA, T = 25_C
DSS
GS
D
J
= 0 V, I = 1 mA, T = 150_C
GS
D
J
DBV
/DT
Breakdown Voltage Temperature
Coefficient
= 1 mA, Referenced to 25_C
0.68
V/_C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 650 V, V = 0 V
−
−
−
−
0.58
−
1
mA
DSS
GS
= 520 V, T = 125_C
−
C
I
Gate to Body Leakage Current
=
30 V, V = 0 V
100
nA
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V , I = 0.2 mA
2.5
−
−
310
6
4.5
360
−
V
mW
S
GS(th)
DS(on)
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
= 10 V, I = 5 A
D
g
FS
= 20 V, I = 5 A
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400 V, V = 0 V, f = 1 MHz
−
−
−
−
−
−
−
−
730
15
−
−
−
−
−
−
−
−
pF
pF
pF
pF
nC
nC
nC
W
iss
DS
GS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V
DS
V
DS
V
DS
= 0 V to 400 V, V = 0 V
173
26
oss(eff.)
GS
C
= 0 V to 400 V, V = 0 V
GS
oss(er.)
Q
= 400 V, I = 5 A, V = 10 V
18
g(tot)
D
GS
(Note 5)
Q
4.3
7.6
1
gs
Q
gd
ESR
f = 1 MHz
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
V
= 400 V, I = 5 A,
−
−
−
−
12
11
34
10
−
−
−
−
ns
ns
ns
ns
d(on)
DD
GS
D
= 10 V, R = 4.7 W
g
t
r
(Note 5)
t
d(off)
t
f
SOURCE-DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
−
−
−
−
−
−
10
25
A
A
V
S
I
SM
V
SD
Source to Drain Diode Forward
Voltage
V
GS
= 0 V, I = 5 A
1.2
SD
t
Reverse Recovery Time
V
= 0 V, I = 5 A,
−
−
241
2.4
−
−
ns
rr
GS
F
SD
dI /dt = 100 A/ms
Q
Reverse Recovery Charge
mC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Essentially independent of operating temperature typical characteristics.
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3
FCD360N65S3R0
TYPICAL PERFORMANCE CHARACTERISTICS
50
10
50
VGS
=
10.0V
*Notes:
1. V = 20V
8.0V
7.0V
6.5V
6.0V
5.5V
DS
2. 250 s Pulse Test
m
10
1
150oC
25oC
1
o
−55 C
*Notes:
1. 250 ms Pulse Test
2. TC = 25oC
0.1
0.1
0.2
1
10
20
2
3
4
5
6
7
8
9
VDS, Drain−Source Voltage[V]
VGS, Gate−Source Voltage[V]
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.6
0.5
0.4
0.3
0.2
0.1
100
10
*Note: TC = 25oC
*Notes:
1. VGS
= 0V
m
s Pulse Test
2. 250
150oC
1
VGS = 10V
25oC
VGS = 20V
0.1
o
−55 C
0.01
0.001
0.0
0.5
1.0
1.5
0
5
10
15
20
25
ID, Drain Current [A]
VSD, Body Diode Forward Voltage [V]
Figure 4. Body Diode Forward Voltage Variation
vs. Source Current and Temperature
Figure 3. On−Resistance Variation vs
Drain Current and Gate Voltage
10
100000
10000
1000
100
*Note: ID = 5A
8
VDS = 130V
Ciss
VDS = 400V
6
4
2
0
Coss
*Note:
1. V = 0V
GS
10
2. f = 1MHz
C
C
C
= C
+ C (C = shorted)
gs gd ds
iss
Crss
1
= C
+ C
oss
rss
ds
gd
gd
= C
0.1
0.1
0
5
10
15
20
1
10
100
1000
Qg, Total Gate Charge [nC]
VDS, Drain−Source Voltage [V]
Figure 6. Gate Charge Characteristics
Figure 5. Capacitance Characteristics
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4
FCD360N65S3R0
TYPICAL PERFORMANCE CHARACTERISTICS(Continued)
3.0
1.2
1.1
1.0
0.9
0.8
*Notes:
1. V = 10V
*Notes:
1. V = 0V
GS
GS
2.5
2.0
1.5
1.0
0.5
0.0
2. ID = 5A
2. ID = 10mA
−50
0
50
100
150
−50
0
50
100
150
TJ, Junction Temperature [ oC]
TJ, Junction Temperature [ oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On−Resistance Variation
vs. Temperature
12
10
8
100
10
ms
10
100 ms
1ms
10ms
DC
6
1
Operation in This Area
is Limited by R
DS(on)
4
*Notes:
1. TC = 25oC
0.1
0.01
2
2. T = 150o
J
C
3. Single Pulse
0
1
10
100
1000
25
50
75
100
125
150
TC, Case Temperature [ oC]
VDS, Drain−Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 9. Maximum Safe Operating Area
5
4
3
2
1
0
0
130
260
390
520
650
VDS, Drain to Source Voltage [V]
Figure 11. Eoss vs. Drain to Source Voltage
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5
FCD360N65S3R0
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.1
0.01
0.05
0.02
0.01
t 1
t
2
NOTES:
Z
(t) = r (t) x R
q
JC
q
JC
R
= 1.5 5C/W
q
JC
Peak T = P
x Z
(t) + T
JC C
SINGLE PULSE
q
J
DM
Duty Cycle, D = t / t
1
2
0.001
−3
−2
10−5
10−4
10
10
t, RECTANGULAR PULSE DURATION (sec)
10−1
100
101
102
Figure 12. Transient Thermal Response Curve
www.onsemi.com
6
FCD360N65S3R0
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
r
t
f
t
t
d(off)
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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7
FCD360N65S3R0
+
DUT
V
SD
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
www.onsemi.com
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK3 (TO−252 3 LD)
CASE 369AS
ISSUE A
DATE 28 SEP 2022
GENERIC
MARKING DIAGRAM*
XXXXXX
XXXXXX
AYWWZZ
XXXX = Specific Device Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON13810G
DPAK3 (TO−252 3 LD)
PAGE 1 OF 1
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© Semiconductor Components Industries, LLC, 2019
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