FCD5N60TM-WS [ONSEMI]
功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，4.6 A，950 mΩ，DPAK;
| 型号： | FCD5N60TM-WS |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，4.6 A，950 mΩ，DPAK |
| 文件： | 总10页 (文件大小：615K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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2014 年2 月
FCD5N60
N 沟道SuperFET MOSFET
600 V, 4.6 A, 950 m
®
特性
•
说明
SuperFET® MOSFET 是飞兆半导体第一代利用电荷平衡技术实
现出色低导通电阻和更低栅极电荷性能的高压超级结（SJ）
MOSFET 系列产品。这项技术专用于最小化导通损耗并提供卓
越的开关性能、dv/dt 额定值和更高雪崩能量。因此，SuperFET
MOSFET 非常适合开关电源应用，如功率因数校正(PFC)、服务
器/ 电信电源、平板电视电源、ATX 电源及工业电源应用。
650 V @ TJ = 150°C
•
Typ.RDS(on) = 810 m
• 超低栅极电荷（典型值Qg = 16 nC)
• 低有效输出电容（典型值Coss(eff.)= 32 pF)
•
100% 经过雪崩测试
• 符合RoHS 标准
应用
•
LCD/LED 电视和显示器
• 照明
• 光伏逆变器
•
AC-DC 电源
D
D
G
G
S
D-PAK
S
MOSFET 最大额定值TC =25°C 除非另有说明。
FCD5N60TM /
FCD5N60TM_WS
符号
VDSS
参数
单位
600
4.6
V
A
漏极－源极电压
漏极电流
- 连续(TC=25°C)
- 连续(TC=100°C)
- 脉冲
ID
2.9
IDM
13.8
±30
159
4.6
A
V
漏极电流
（说明1）
VGSS
EAS
IAR
栅极－源极电压
单脉冲雪崩能量
雪崩电流
mJ
A
（说明2）
（说明1）
（说明1）
（说明3）
EAR
dv/dt
5.4
mJ
V/ns
W
重复雪崩能量
二极管恢复dv/dt 峰值
4.5
(TC = 25°C)
54
PD
功耗
0.43
W/°C
°C
- 降低至25°C 以上
TJ, TSTG
TL
工作和存储温度范围
-55 至+150
300
°C
用于焊接的最大引线温度，距离外壳1/8"，持续5 秒
热性能
FCD5N60TM /
FCD5N60TM_WS
符号
参数
单位
RJC
RJA
2.3
83
结至外壳热阻最大值
结至环境热阻最大值
°C/W
www.fairchildsemi.com
©2008 飞兆半导体公司
1
FCD5N60 Rev. C1
封装标识与定购信息
器件编号
顶标
封装
包装方法
卷带
卷尺寸
带宽
数量
FCD5N60TM
FCD5N60
D-PAK
330 mm
16 mm
2500 个
2500 个
FCD5N60TM_WS
FCD5N60
D-PAK
330 mm
16 mm
卷带
电气特性TC =25°C 除非另有说明。
符号
关断特性
BVDSS
参数
测试条件
最小值 典型值 最大值
单位
VGS = 0 V, ID = 250 μA, TC = 25°C
VGS = 0 V, ID = 250 μA, TC = 150°C
600
-
-
-
-
V
V
漏极－源极击穿电压
650
BVDSS
/ TJ
BVDS
IDSS
IGSS
ID = 250 μA，参考温度为25°C
-
0.6
-
V/°C
V
击穿电压温度系数
VGS = 0 V, ID = 4.6 A
-
-
-
-
700
-
1
漏源极雪崩击穿电压
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = ±30 V, VDS = 0 V
-
-
-
A
零栅极电压漏极电流
10
±100
nA
栅极- 体漏电流
导通特性
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250 A
VGS = 10 V, ID = 2.3 A
VDS = 40 V, ID = 2.3 A
3.0
-
5.0
0.95
-
V
S
栅极阈值电压
-
-
0.81
3.8
漏极至源极静态导通电阻
正向跨导
动态特性
Ciss
-
-
-
-
-
470
250
22
600
pF
pF
pF
pF
pF
输入电容
VDS = 25 V, VGS = 0 V,
f = 1 MHz
Coss
320
输出电容
Crss
-
-
-
反向传输电容
输出电容
Coss
VDS = 480 V, VGS = 0 V, f = 1 MHz
12
Coss(eff.)
VDS = 0 V 至400 V, VGS = 0 V
32
有效输出电容
开关特性
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
12
40
47
22
16
2.8
7
30
90
95
55
-
ns
ns
导通延迟时间
VDD = 300 V, ID = 4.6 A,
开通上升时间
V
GS = 10 V, RG = 25
ns
关断延迟时间
（说明4）
（说明4）
ns
关断下降时间
Qg(tot)
Qgs
Qgd
nC
nC
nC
10 V 的栅极电荷总量
栅极- 源极栅极电荷
栅极- 漏极“ 米勒” 电荷
V
V
DS = 480 V, ID = 4.6 A,
GS = 10 V
-
-
漏极- 源极二极管特性
IS
-
-
-
-
-
-
-
4.6
13.8
1.4
-
A
A
漏极- 源极二极管最大正向连续电流
漏极- 源极二极管最大正向脉冲电流
漏极- 源极二极管正向电压
反向恢复时间
ISM
VSD
trr
VGS = 0 V, ISD = 4.6 A
-
V
295
2.7
ns
C
VGS = 0 V, ISD = 4.6 A
dIF/dt = 100 A/s
Qrr
-
反向恢复电荷
注意：
1. 重复额定值：脉冲宽度受限于最大结温。
2. I =2.3 A，V =50 V，R =25 ，开始T =25°C。
AS
DD
G
J
3. I 4.6 A，di/dt 200 A/s，V BV
，开始T =25°C。
J
SD
DD
DSS
4. 本质上独立于工作温度的典型特性。
www.fairchildsemi.com
©2008 飞兆半导体公司
2
FCD5N60 Rev. C1
典型性能特征
图1. 导通区域特性
图2. 传输特性
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
101
101
100
10-1
Bottom : 5.5 V
150oC
25oC
100
-55oC
* Notes :
1. 250s Pulse Test
* Note
1. VDS = 40V
o
2. TC = 25 C
2. 250s Pulse Test
10-1
10-1
100
101
2
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
图3. 导通电阻变化与漏极电流和栅极电压的关系
图4. 体二极管正向电压变化与源极电流和温度的关系
3.0
2.5
101
VGS = 10V
2.0
1.5
1.0
0.5
150oC
25oC
100
-55oC
VGS = 20V
* Note
1. VDS = 40V
o
2. 250s Pulse Test
* Note : TJ = 25 C
10-1
0.0
2.5
5.0
7.5
10.0
12.5
15.0
2
4
6
8
10
ID, Drain Current [A]
VGS , Gate-Source Voltage [V]
图5. 电容特性
图6. 栅极电荷特性
1500
12
Ciss = Cgs + Cgd (Cds = shorted)
VDS = 100V
VDS = 250V
VDS = 400V
C
oss = Cds + Cgd
Crss = Cgd
10
8
* Notes :
1. VGS = 0 V
1000
500
2. f = 1 MHz
Coss
6
Ciss
4
2
Crss
* Note : ID = 4.6A
15
0
0
100
101
0
5
10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
www.fairchildsemi.com
©2008 飞兆半导体公司
3
FCD5N60 Rev. C1
典型性能特性（接上页）
图7. 击穿电压变化与温度的关系图
8. 导通电阻变化与温度的关系
3.0
1.2
2.5
2.0
1.5
1.0
0.5
0.0
1.1
1.0
0.9
0.8
* Notes :
1. VGS = 0 V
* Notes :
1. VGS = 10 V
2. ID = 250 A
2. ID = 2.3 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
图9. 最大安全工作区图
10. 最大漏极电流与壳温的关系
5
102
101
100
10-1
10-2
Operation in This Area
is Limited by R DS(on)
4
3
2
1
0
10 us
100 us
1 ms
10 ms
100 ms
DC
* Notes :
1. TC = 25 o
C
2. TJ = 150 o
C
3. Single Pulse
100
101
102
103
25
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
图11. 瞬态热响应曲线
D=0.5
0.2
100
10-1
10-2
* N otes
:
1. Z JC (t) = 2.3 oC /W M ax.
0.1
2. D uty Factor, D =t1/t2
0.05
3. TJM - TC
= PDM * ZJC(t)
0.02
0.01
PDM
t1
t2
single pulse
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square W ave Pulse D uration [sec]
www.fairchildsemi.com
©2008 飞兆半导体公司
4
FCD5N60 Rev. C1
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I = 常量
G
Charge
图12. 栅极电荷测试电路与波形
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
图13. 阻性开关测试电路与波形
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
图14. 非箝位感性开关测试电路与波形
www.fairchildsemi.com
©2008 飞兆半导体公司
5
FCD5N60 Rev. C1
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
图15. 峰值二极管恢复dv/dt 测试电路与波形
www.fairchildsemi.com
©2008 飞兆半导体公司
6
FCD5N60 Rev. C1
机械尺寸
图16. TO252 (D-PAK)，模塑，3 引脚，选项AA&AB
封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 /
或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件，尤其是其中涉及飞兆公司
产品保修的部分。
随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003
www.fairchildsemi.com
©2008 飞兆半导体公司
7
FCD5N60 Rev. C1
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AccuPower™
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CorePOWER™
CROSSVOLT™
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F-PFS™
FRFET
Sync-Lock™
®*
®
®
®
®
Global Power ResourceSM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
Gmax™
GTO™
TinyCalc™
®
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IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
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®
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®
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Datasheet contains the design specifications for product development. Specifications
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Rev. I66
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©2008 飞兆半导体公司
FCD5N60 Rev. C1
8
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