FCD620N60ZF [ONSEMI]
功率 MOSFET,N 沟道,SUPERFET® II,FRFET®,600 V,7.3 A,620 mΩ,DPAK;型号: | FCD620N60ZF |
厂家: | ONSEMI |
描述: | 功率 MOSFET,N 沟道,SUPERFET® II,FRFET®,600 V,7.3 A,620 mΩ,DPAK 开关 脉冲 晶体管 |
文件: | 总11页 (文件大小:555K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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2014 年 2 月
FCD620N60ZF
N 沟道 SuperFET II FRFET MOSFET
600 V、 7.3 A、 620 m
®
®
特性
说明
SuperFET® II MOSFET 是飞兆半导体新一代利用电荷平衡技术
实现出色低导通电阻和更低栅极电荷性能的高压超级结 (SJ)
MOSFET 系列产品。这项技术专用于最小化导通损耗并提供卓越
的开关性能、 dv/dt 额定值和更高雪崩能量。因此, SuperFET
MOSFET 非常适合开关电源应用,如功率因数校正 (PFC)、服务
器 / 电信电源、平板电视电源、 ATX 电源及工业电源应用。
SuperFET II FRFET® MOSFET 优化体二极管的反向恢复性能可
去除额外元件并提高系统可靠性。
•
•
•
•
•
•
•
650 V @ TJ = 150°C
典型值 RDS(on) = 528 m
超低栅极电荷 (典型值 Qg = 20 nC)
低有效输出电容 (典型值 Coss(eff.)= 71 pF)
100% 经过雪崩测试
提高静电放电保护能力
符合 RoHS 标准
应用
•
•
LCD / LED / PDP 电视和显示器照明
太阳能逆变器 / AC-DC 电源
D
D
G
G
S
D-PAK
S
绝对最大额定值 TC = 25°C 除非另有说明
FCD620N60ZF
符号
参数
- DC
单位
VDSS
VGSS
600
±20
±30
7.3
V
漏极-源极电压
栅极-源极电压
V
A
- AC
(f > 1 Hz)
- 连续 (TC = 25°C)
- 连续 (TC = 100°C)
- 脉冲
ID
漏极电流
4.6
IDM
EAS
IAR
21.9
135
1.5
A
mJ
A
漏极电流
(说明 1)
(说明 2)
(说明 1)
(说明 1)
单脉冲雪崩能量
雪崩电流
EAR
0.89
100
20
mJ
重复雪崩能量
MOSFET dv/dt
dv/dt
PD
V/ns
二极管恢复 dv/dt 峰值
(说明 3)
(TC = 25°C)
89
W
W/°C
°C
功耗
0.71
- 降低至 25°C 以上
TJ, TSTG
TL
工作和存储温度范围
-55 至 +150
300
°C
用于焊接的最大引线温度,距离外壳 1/8",持续 5 秒
热性能
FCD620N60ZF
符号
RJC
参数
结至外壳热阻最大值
单位
1.4
°C/W
RJA
100
结至环境热阻最大值
www.fairchildsemi.com
© 2013 飞兆半导体公司
1
FCD620N60ZF Rev. C3
封装标识与定购信息
器件编号
顶标
FCD620N60ZF
封装
包装方法
卷带
卷尺寸
带宽
数量
FCD620N60ZF
DPAK
330 mm
16 mm
2500 个
电气特性 TC = 25°C 除非另有说明
符号
参数
测试条件
最小值 典型值 最大值 单位
关断特性
V
GS = 0 V, ID = 10 mA, TJ = 25°C
600
650
-
-
-
-
BVDSS
V
漏极-源极击穿电压
VGS = 0 V, ID = 10 mA, TJ = 150°C
ID=10 mA,参考温度为 25°C
VGS = 0 V, ID = 7.3 A
BVDSS
/ TJ
BVDS
IDSS
IGSS
击穿电压温度系数
漏源极雪崩击穿电压
零栅极电压漏极电流
栅极 - 体漏电流
-
0.6
-
V/°C
V
-
-
-
-
700
-
5
V
DS = 480 V, VGS = 0 V
-
-
-
A
A
VDS = 480 V, TC = 125°C
VGS = ±20 V, VDS = 0 V
20
±10
导通特性
VGS(th)
RDS(on)
VGS = VDS, ID = 250 A
3
-
-
5
V
栅极阈值电压
VGS = 10 V, ID = 3.6 A
0.528
0.62
漏极至源极静态导通电阻
动态特性
Ciss
-
-
-
-
-
-
-
-
-
855
625
30
1135
pF
pF
pF
pF
pF
nC
nC
nC
输入电容
VDS = 25 V, VGS = 0 V,
f = 1 MHz
Coss
Crss
830
输出电容
45
-
反向传输电容
输出电容
Coss
Coss(eff.)
Qg(tot)
Qgs
VDS = 380 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
16
71
-
有效输出电容
10 V 的栅极电荷总量
栅极 - 源极栅极电荷
栅极 - 漏极 “ 米勒 ” 电荷
等效串联电阻
20
36
-
V
V
DS = 380 V, ID = 3.6 A,
GS = 10 V
4.5
7.7
2.7
(说明 4)
Qgd
-
ESR
f = 1 MHz
-
开关特性
td(on)
tr
td(off)
tf
-
-
-
-
15
7
40
24
80
30
ns
ns
ns
ns
导通延迟时间
开通上升时间
关断延迟时间
关断下降时间
V
V
DD = 380 V, ID = 3.6 A,
GS = 10 V, Rg = 4.7
35
10
(说明 4)
漏极 - 源极二极管特性
IS
-
-
-
-
-
-
7.3
21.9
1.2
-
A
A
漏极 - 源极二极管最大正向连续电流
漏极 - 源极二极管最大正向脉冲电流
漏极 - 源极二极管正向电压
反向恢复时间
ISM
VSD
trr
-
-
VGS = 0 V, ISD = 3.6 A
V
84
ns
C
VGS = 0 V, ISD = 3.6 A,
dIF/dt = 100 A/s
Qrr
0.325
-
反向恢复电荷
注意:
1. 重复额定值:脉冲宽度受限于最大结温。
2. I = 1.5 A, V = 50 V, R = 25 ,启动 T = 25°C。
AS
DD
G
J
3. I 3.6 A, di/dt 200 A/s, V BV
,启动 T = 25°C。
SD
DD
DSS
J
4. 本质上独立于工作温度的典型特性。
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© 2013 飞兆半导体公司
2
FCD620N60ZF Rev. C3
典型性能特征
图 1. 通态区域特性
图 2. 传输特性
20
25
VGS = 15.0V
*Notes:
10.0V
8.0V
7.0V
6.5V
6.0V
1. VDS = 20V
2. 250s Pulse Test
10
10
150oC
25oC
-55oC
*Notes:
1. 250s Pulse Test
2. TC = 25oC
1
0.4
1
1
10
20
4
5
6
7
8
VGS, Gate to Source Voltage[V]
VDS, Drain to Source Voltage[V]
图 3. 导通电阻变化与漏极电流和栅极电压
图 4. 体二极管正向电压变化与源极电流和温度
1.2
40
*Note: TC = 25oC
*Notes:
1. VGS = 0V
2. 250s Pulse Test
10
1.0
150oC
0.8
25oC
VGS = 10V
1
0.6
VGS = 20V
0.4
0.1
0.2
0
4
8
12
16
20
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD, Body Diode Forward Voltage [V]
图 5. 电容特性
图 6. 栅极电荷特性
10000
10
*Note: ID = 3.6A
Ciss
1000
100
10
8
VDS = 120V
VDS = 300V
VDS = 480V
6
4
2
0
Coss
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
1
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds gd
= C
gd
oss
rss
0.1
0.1
1
10
100
600
0
4
8
12
16
20
24
VDS, Drain to Source Voltage [V]
Qg, Total Gate Charge [nC]
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© 2013 飞兆半导体公司
3
FCD620N60ZF Rev. C3
典型性能特征 (接上页)
图 7. 击穿电压变化与温度
图 8. 导通电阻变化与温度
1.15
2.5
*Notes:
1. VGS = 10V
*Notes:
1. VGS = 0V
1.10
2. ID = 3.6A
2.0
2. ID = 10mA
1.05
1.00
0.95
0.90
0.85
1.5
1.0
0.5
0.0
-75
-50
0
50
100
150
200
-75
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
图 9. 最大安全工作区
图 10. 最大漏极电流与外壳温度
8
50
6
4
2
0
10
10s
100s
1ms
Operation in This Area
is Limited by R DS(on)
*Notes:
1. TC = 25oC
1
10ms
DC
2. TJ = 150oC
3. Single Pulse
0.1
0.1
25
50
75
100
125
150
1
10
100
1000
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
图 11. Eoss 与漏极 - 源极电压的关系
4.0
3.2
2.4
1.6
0.8
0
0
122
244
366
488
600
VDS, Drain to Source Voltage [V]
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© 2013 飞兆半导体公司
4
FCD620N60ZF Rev. C3
典型性能特征 (接上页)
图 12. 瞬态热响应曲线
2
1
0.5
0.2
PDM
t1
t2
0.1
*Notes:
0.05
1. ZJC(t) = 1.4oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
0.02
0.01
Single pulse
0.1
10-5
10-4
10-3
10-2
10-1
100
t1, Rectangular Pulse Duration [sec]
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© 2013 飞兆半导体公司
5
FCD620N60ZF Rev. C3
I
= 常量
G
图 13. 栅极电荷测试电路与波形
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
图 14. 阻性开关测试电路与波形
VGS
图 15. 非箝位电感开关测试电路与波形
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© 2013 飞兆半导体公司
6
FCD620N60ZF Rev. C3
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
图 16. 二极管恢复 dv/dt 峰值测试电路与波形
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© 2013 飞兆半导体公司
7
FCD620N60ZF Rev. C3
机械尺寸
图 17. TO252 (D-PAK),模塑, 3 引脚,选项 AA&AB
封装图纸作为一项服务,提供给考虑飞兆半导体元件的客户。具体参数可能会有变化,且不会做出相应通知。请注意图纸上的版本和 /
或日期,并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件,尤其是其中涉及飞兆公司
产品保修的部分。
随时访问飞兆半导体在线封装网页,可以获取最新的封装图纸:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003
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© 2013 飞兆半导体公司
8
FCD620N60ZF Rev. C3
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
F-PFS™
FRFET
Sync-Lock™
®*
®
®
®
®
Global Power ResourceSM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
Gmax™
GTO™
TinyCalc™
®
TinyLogic
TINYOPTO™
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Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
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®
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Saving our world, 1mW/W/kW at a time™
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®
TRUECURRENT *
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SMART START™
®
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®
®
SPM
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SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
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®
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UHC
®
Ultra FRFET™
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OPTOLOGIC
OPTOPLANAR
FACT
FAST
®
®
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Rev. I66
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FCD620N60ZF Rev. C3
9
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