FCH041N65EFLN4 [ONSEMI]
功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，650 V，76 A，41 mΩ，TO-247 窄体 4L;
| 型号： | FCH041N65EFLN4 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，650 V，76 A，41 mΩ，TO-247 窄体 4L 局域网 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：529K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET – Power, N-Channel,
SUPERFET) II, FRFET)
650 V, 76 A, 41 mW
FCH041N65EFLN4
Description
www.onsemi.com
SUPERFET II MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provides superior switching performance, and
withstand extreme dv/dt rate.
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
41 mW @ 10 V
76 A
Consequently, SUPERFET II MOSFET is very suitable for the
various power system for miniaturization and higher efficiency.
SUPERFET II FRFET MOSFET’s optimized reverse recovery
performance of body diode can remove additional component and
improve system reliability.
D
G
S1: Driver Source
S2: Power Source
Features
S1
S2
• 700 V @ T = 150°C
J
POWER MOSFET
• Typ. R
= 36 mW
DS(on)
• Ultra Low Gate Charge (Typ. Q = 229 nC)
g
• Low Effective Output Capacitance (Typ. C
= 631 pF)
oss(eff.)
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
Applications
D
S2
S1
• Telecom / Server Power Supplies
• Industrial Power Supplies
• EV Charger
G
TO−247−4LD
CASE 340CW
• UPS / Solar
MARKING DIAGRAM
$Y&Z&3&K
FCH041
N65EFLN4
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
FCH041N65EFLN4 = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
November, 2019 − Rev. 1
FCH041N65EFLN4/D
FCH041N65EFLN4
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
C
Symbol
Parameter
Value
650
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
− DC
20
V
− AC (f > 1 Hz)
30
I
D
Drain Current
− Continuous (T = 25°C)
76
A
C
− Continuous (T = 100°C)
48.1
228
C
I
Drain Current
− Pulsed (Note 1)
A
mJ
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
2025
15
AS
AS
I
E
5.95
100
mJ
V/ns
AR
dv/dt
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
50
P
(T = 25°C)
595
W
W/°C
°C
D
C
− Derate Above 25°C
4.76
−55 to +150
300
T , T
Operating and Storage Temperature Range
J
STG
T
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. I = 15 A, R = 25 W, starting T = 25°C.
AS
G
J
3. I ≤ 38 A, di/dt ≤ 200 A/ms, V ≤ 380 V, starting T = 25°C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.21
40
Unit
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
_C/W
q
JC
JA
R
q
PACKAGE MARKING AND ORDERING INFORMATION
Packing
Method
Part Number
Top Marking
Package
Reel Size
Tape Width
Quantity
FCH041N65EFLN4
FCH041N65EFLN4
TO−247 L4
Narrow Lead
Tube
N/A
N/A
30 Units
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
650
−
−
−
−
−
V
V
V
V
I
= 0 V, I = 10 mA, T = 25_C
DSS
GS
D
J
= 0 V, I = 10 mA, T = 150_C
700
GS
D
J
DBV
/ DT
Breakdown Voltage Temperature
Coefficient
= 10 mA, Referenced to 25_C
−
0.72
V/_C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 650 V, V = 0 V
−
−
−
−
145
−
10
−
mA
DSS
GS
= 520 V, T = 125_C
C
I
Gate to Body Leakage Current
=
20 V, V = 0 V
100
nA
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
V
= V , I = 7.6 mA
3.0
−
5.0
41
V
GS(th)
DS(on)
GS
DS
D
R
Static Drain to Source On Resistance
= 10 V, I = 38 A
−
36
mW
GS
D
www.onsemi.com
2
FCH041N65EFLN4
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ON CHARACTERISTICS
g
Forward Transconductance
V
V
= 20 V, I = 38 A
−
71.7
−
S
FS
DS
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
= 100 V, V = 0 V, f = 1 MHz
−
−
−
−
−
−
−
−
−
9446
366
35
12560
pF
pF
pF
pF
pF
nC
nC
nC
W
iss
DS
GS
C
Output Capacitance
490
−
oss
C
Reverse Transfer Capacitance
Output Capacitance
rss
C
V
DS
V
DS
V
DS
= 380 V, V = 0 V, f = 1 MHz
197
631
229
50
−
oss
GS
C
Effective Output Capacitance
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
= 0 V to 400 V, V = 0 V
−
oss(eff.)
GS
Q
= 380 V, I = 38 A, V = 10 V
298
−
g(tot)
D
GS
(Note 4)
Q
gs
Q
90
−
gd
ESR
f = 1 MHz
0.6
−
SWITCHING CHARACTERISTICS
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
V
= 380 V, I = 38 A,
−
−
−
−
55
25
120
60
ns
ns
ns
ns
d(on)
DD
GS
D
= 10 V, R = 2 W
g
t
r
(Note 4)
169
18
348
46
d(off)
t
f
SOURCE-DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
−
−
−
−
−
−
−
76
228
1.2
−
A
A
S
I
SM
V
SD
Drain to Source Diode Forward Voltage
Reverse Recovery Time
V
V
= 0 V, I = 38 A
−
V
GS
SD
t
rr
= 0 V, I = 38 A,
207
1.5
ns
mC
GS
SD
dI /dt = 100 A/ms
F
Q
Reverse Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
TYPICAL PERFORMANCE CHARACTERISTICS
500
100
200
100
V
GS
=20.0 V
10.0 V
8.0 V
7.0 V
6.5 V
150°C
6.0 V
5.5 V
25°C
−55°C
10
1
10
1
250 ms Pulse Test
= 25°C
V
DS
= 20 V
T
C
250 ms Pulse Test
3
4
GS
5
6
7
8
0.1
1
10
V
, Gate−Source Voltage (V)
V
DS
, Drain−Source Voltage (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
www.onsemi.com
3
FCH041N65EFLN4
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
1000
0.06
0.05
0.04
0.03
100
150oC
10
VGS = 10V
1
25oC
0.1
VGS = 20V
*Notes:
0.01
1. VGS = 0V
*Note: TC = 25oC
160 200 240
ID, Drain Current [A]
2. 250ms Pulse Test
0.001
0.0
0.5
1.0
1.5
2.0
0
40
80
120
VSD, Body Diode Forward Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
Figure 3. On−Resistance Variation
vs.Drain Current and Gate Voltage
10
8
100000
10000
1000
100
VDS = 130V
Ciss
VDS = 325V
VDS = 520V
6
Coss
4
*Note:
1. VGS = 0V
Crss
2. f = 1MHz
10
2
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
oss
rss
ds
gd
= C
gd
*Note: ID = 38A
150 200 250
1
0
0.1
1
10
100
1000
0
50
100
VDS, Drain−Source Voltage [V]
Qg, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
1.15
1.10
1.05
1.00
0.95
0.90
2.5
2.0
1.5
1.0
0.5
0.0
*Notes:
1. VGS = 0V
2. ID = 10mA
*Notes:
1. VGS = 10V
2. I D = 38A
−75 −50 −25
0
25 50 75 100 125 150
−75 −50 −25
0
25 50 75 100 125 150
TJ, Junction Temperature [ oC]
TJ, Junction Temperature [ oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On−Resistance Variation
vs. Temperature
www.onsemi.com
4
FCH041N65EFLN4
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
80
500
100
10ms
100ms
60
1ms
DC
10
1
Operation in This Area
is Limited by R
40
DS(on)
*Notes:
1. TC = 25oC
20
0.1
0.01
2. T = 150oC
3. Single Pulse
J
0
25
50
75
100
125
150
1
10
100
1000
TC, Case Temperature [ oC]
VDS, Drain−Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
52.0
41.6
31.2
20.8
10.4
0
0
100 200 300 400 500 600 700
VDS, Drain to Source Voltage [V]
Figure 11. EOSS vs. Drain to Source Voltage
0.5
0.5
0.1
0.2
PDM
0.1
0.05
t1
0.01
t2
0.02
*Notes:
0.01
1. ZqJC(t) = 0.21oC/W Max.
2. Duty Factor, D= t 1/t2
Single pulse
3. TJM − T = PDM * ZqJC(t)
C
0.001
10−5
10−4
10−3
10−2
10−1
100
101
t1, Rectangular Pulse Duration [sec]
Figure 12. Transient Thermal Response Curve
www.onsemi.com
5
FCH041N65EFLN4
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
t
d(off)
t
r
t
f
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
www.onsemi.com
6
FCH041N65EFLN4
+
DUT
V
DS
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET and FRFET are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries.
www.onsemi.com
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247 4−LEAD, THIN LEADS
CASE 340CW
ISSUE A
DATE 16 SEP 2019
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON80893G
TO−247 4−LEAD, THIN LEADS
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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