FCH077N65F-F155 [ONSEMI]
功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，650 V，54 A，77 mΩ，TO-247;
| 型号： | FCH077N65F-F155 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，650 V，54 A，77 mΩ，TO-247 局域网 开关 脉冲 晶体管 |
| 文件： | 总11页 (文件大小：649K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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2014 年 10 月
FCH077N65F
®
®
N 沟道 SuperFET II FRFET MOSFET
650 V, 54 A, 77 m
特性
描述
SuperFET® II MOSFET 是飞兆半导体利用电荷平衡技术实现出
色 的 低 导 通 电 阻 和 更 低 栅 极 电 荷 性 能 的 全 新 高 压 超 级 结
(SJ)MOSFET 系列产品。这项技术专用于最小化导通损耗并提供
卓越的开关性能、dv/dt 额定值和更高雪崩能量。因此，SuperFET
II MOSFET 非常适合开关电源应用，如功率因数校正 (PFC)、服
务器 / 电信电源、平板电视电源、 ATX 电源及工业电源应用。
SuperFET II FRFET® MOSFET 优化体二极管的反向恢复性能可
去除额外元件，提高系统可靠性。
•
•
•
•
•
•
700 V @ TJ = 150°C
典型值 RDS(on) = 68 m
超低栅极电荷 （典型值 Qg=126 nC）
低有效输出电容 （典型值 Coss(eff.)= 458 pF）
100% 经过雪崩测试
符合 RoHS 标准
应用
•
•
LCD / LED / PDP TV
•
•
通信 / 服务器电源
AC-DC 电源
太阳能逆变器
D
G
G
TO-247
长引脚
D
S
S
绝对最大额定值 TC = 25°C 除非另有说明。
FCH077N65F_F155
符号
参数
单位
VDSS
VGSS
650
±20
±30
54
V
漏极－源极电压
栅极－源极电压
- DC
V
A
- AC
(f > 1 Hz)
- 连续 (TC = 25°C)
- 连续 (TC = 100°C)
- 脉冲
ID
漏极电流
32
IDM
EAS
IAR
162
1128
11
A
mJ
A
漏极电流
（注 1）
（注 2）
（注 1）
（注 1）
单脉冲雪崩能量
雪崩电流
EAR
4.81
100
50
mJ
重复雪崩能量
MOSFET dv/dt
dv/dt
PD
V/ns
二极管恢复 dv/dt 峰值
（注 3）
(TC = 25°C)
481
3.85
W
W/°C
°C
功耗
- 高于 25°C 的功耗系数
TJ, TSTG
TL
工作和存储温度范围
-55 至 +150
300
°C
用于焊接的最高引脚温度，距离外壳 1/8”，持续 5 秒
热性能
FCH077N65F_F155
符号
RθJC
参数
结至外壳热阻最大值
单位
0.26
40
°C/W
RθJA
结至环境热阻最大值
www.fairchildsemi.com
1
© 2014 飞兆半导体公司
FCH077N65F Rev. C0
封装标识与定购信息
器件编号
顶标
FCH077N65F
封装
包装方法
塑料管
卷尺寸
带宽
数量
FCH077N65F_F155
TO-247 G03
N/A
N/A
30 颗
电气特性 TC = 25°C 除非另有说明。
符号
关断特性
BVDSS
参数
测试条件
最小值 典型值 最大值
单位
VGS = 0 V, ID = 1 mA, TJ = 25°C
VGS = 0 V, ID = 1 mA, TJ = 150°C
650
700
-
-
-
-
V
V
漏极－源极击穿电压
∆BVDSS
/ ∆TJ
击穿电压温度系数
-
0.79
-
V/°C
ID = 1 mA，参考 25°C 数值
VDS = 650 V, VGS = 0 V
-
-
-
-
144
-
10
-
IDSS
IGSS
μA
零栅极电压漏极电流
栅极－体漏电流
VDS = 520 V, VGS = 0 V, TC = 125 °C
VGS = ±20 V, VDS = 0 V
±100
nA
导通特性
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 5.4 mA
VGS = 10 V, ID = 27 A
VDS = 20 V, ID = 27 A
3
-
-
5
77
-
V
m
S
栅极阈值电压
68
42
漏极至源极静态导通电阻
正向跨导
-
动态特性
Ciss
-
-
-
-
-
-
-
-
-
5345
165
0.8
97
7109
pF
pF
pF
pF
pF
nC
nC
nC
输入电容
VDS = 100 V, VGS = 0 V,
f = 1 MHz
Coss
220
输出电容
Crss
-
反向传输电容
输出电容
Coss
VDS = 380 V, VGS = 0 V, f = 1 MHz
VDS = 0 V 至 400 V, VGS = 0 V
VDS = 380 V, ID = 27 A,
-
Coss(eff.)
Qg(tot)
Qgs
693
126
28
-
有效输出电容
10 V 的栅极电荷总量
栅极－源极栅极电荷
栅极－漏极 “ 米勒 ” 电荷
等效串联电阻
164
-
-
-
V
GS = 10 V
（注 4）
Qgd
53
ESR
f = 1 MHz
0.7
开关特性
td(on)
tr
td(off)
tf
-
-
-
-
40
35
113
5
90
80
ns
ns
ns
ns
导通延迟时间
导通上升时间
关断延迟时间
关断下降时间
VDD = 380 V, ID = 27 A,
V
GS = 10 V, Rg = 4.7
236
20
（注 4）
漏极 - 源极二极管特性
IS
-
-
-
-
-
-
-
54
162
1.2
-
A
A
漏极－源极二极管最大正向连续电流
ISM
VSD
trr
漏极－源极二极管最大正向脉冲电流
漏极－源极二极管正向电压
反向恢复时间
VGS = 0 V, ISD = 27 A
-
V
163
0.9
ns
μC
VGS = 0 V, ISD = 27 A,
dIF/dt = 100 A/μs
Qrr
注：
-
反向恢复电荷
1. 重复额定值：脉冲宽度受限于最大结温。
2. I = 11 A, R = 25 , 开始于 T = 25°C。
AS
G
J
3. I 27 A, di/dt 200 A/s, V 380 V, 开始于 T = 25°C。
SD
DD
J
4. 典型特性本质上独立于工作温度。
© 2014 飞兆半导体公司
FCH077N65F Rev. C0
www.fairchildsemi.com
2
典型性能特征
图 1. 导通区域特性
图 2. 传输特性
200
1000
*Notes:
VGS = 10.0V
1. VDS = 20V
8.0V
7.0V
6.5V
6.0V
100
10
1
2. 250s Pulse Test
100
5.5V
150oC
25oC
10
-55oC
*Notes:
1. 250s Pulse Test
2. TC = 25oC
1
0.1
3
4
5
6
7
8
1
10
20
VGS, Gate-Source Voltage[V]
VDS, Drain-Source Voltage[V]
图 3. 导通电阻变化与漏极电流和栅极电压的关系
图 4. 体二极管正向电压变化与源极电流和温度的关系
0.14
1000
*Note: TC = 25oC
*Notes:
1. VGS = 0V
100
10
2. 250s Pulse Test
0.12
0.10
150oC
1
25oC
VGS = 10V
0.1
0.08
0.01
VGS = 20V
0.06
0.001
0
32
64
96
128
160
0.0
0.4
0.8
1.2
1.6
2.0
ID, Drain Current [A]
VSD, Body Diode Forward Voltage [V]
图 5. 电容特性
图 6. 栅极电荷特性
100000
10
*Note: ID = 27A
VDS = 130V
10000
1000
8
6
4
2
0
VDS = 325V
Ciss
VDS = 520V
100
Coss
*Note:
1. VGS = 0V
10
1
2. f = 1MHz
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds gd
Crss
oss
rss
= C
gd
0.1
0.1
1
10
100
700
0
26
52
78
104
130
VDS, Drain-Source Voltage [V]
Qg, Total Gate Charge [nC]
© 2014 飞兆半导体公司
FCH077N65F Rev. C0
www.fairchildsemi.com
3
典型性能特性 （接上页）
图 7. 击穿电压变化与温度的关系
图 8. 导通电阻变化与温度的关系
2.5
1.2
*Notes:
1. VGS = 10V
*Notes:
1. VGS = 0V
2. ID = 27A
2.0
2. ID = 10mA
1.1
1.5
1.0
0.5
1.0
0.9
0.8
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
图 9. 最大安全工作区
图 10. 最大漏极电流与壳温的关系
60
200
100
10s
100s
48
36
24
12
0
10
1ms
DC
Operation in This Area
is Limited by R DS(on)
1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.1
25
50
75
100
125
150
1
10
100
1000
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
图 11. Eoss 与漏源极电压的关系
30
24
18
12
6
0
0
130
260
390
520
650
VDS, Drain to Source Voltage [V]
© 2014 飞兆半导体公司
FCH077N65F Rev. C0
www.fairchildsemi.com
4
典型性能特性 （接上页）
图 12. 瞬态热响应曲线
1
0.5
0.1
0.01
0.2
0.1
PDM
t1
0.05
t2
0.02
0.01
*Notes:
1. ZJC(t) = 0.26oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
Single pulse
0.001
10-5
10-4
10-3
t1, Rectangular Pulse Duration [sec]
10-2
10-1
1
© 2014 飞兆半导体公司
FCH077N65F Rev. C0
5
www.fairchildsemi.com
I
= 常量
G
图 13. 栅极电荷测试电路与波形
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
图 14. 阻性开关测试电路与波形
VGS
图 15. 非箝位电感开关测试电路与波形
© 2014 飞兆半导体公司
FCH077N65F Rev. C0
www.fairchildsemi.com
6
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
图 16. 二极管恢复 dv/dt 峰值测试电路与波形
© 2014 飞兆半导体公司
FCH077N65F Rev. C0
www.fairchildsemi.com
7
机械尺寸
图 17. TO-247，模塑， 3 引脚， JEDEC AB 长引脚
封装图纸是作为一项服务提供给考虑飞兆半导体元件的客户的。图纸可能会在没有任何通知的情况下做出一些改动。请注意图纸上的版
本或日期，如有疑问，请联系飞兆半导体代表核实或获得最新版本。封装规格说明并不扩大飞兆半导体全球范围内的条款与条件，尤其
是其中涉及飞兆半导体产品保修的部分。
随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-0A3
© 2014 飞兆半导体公司
FCH077N65F Rev. C0
www.fairchildsemi.com
8
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®
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Rev. I68
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© 2014 飞兆半导体公司
FCH077N65F Rev. C0
ON Semiconductor and
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N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
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