FCH150N65F-F155_技术文档

MOSFET – N ṿᬣ,

SUPERFET II, FRFET

600 V, 24 A, 150 mW

FCH150N65F

ᛄꢀ

www.onsemi.cn

®

SUPERFET ꢀIIꢀMOSFETꢀꢀꢁꢁꢂꢂꢃꢄꢃꢅꢆꢇꢄꢈꢅꢉ

ꢊ ꢆꢇꢋ ꢃ ꢌ ꢈꢍ ꢆꢎ ꢏ ꢃ ꢄ ꢉꢐ ꢊ ꢊꢑ ꢒ ꢋꢓ ꢔ ꢕ ꢀ

(SJ)ꢀMOSFET ꢖꢌꢍꢎ。ꢗꢘꢆꢇ✃ꢂnꢙ෯Ӷꢇꢋꢚꢛၖꢜ

ŻԳꢝꢊრ͓ꢉꢐ、dv/dt ꢞൺȜꢈꢍꢒꢟ༉ꢐꢠ。

ࣀ

ꢡ，

S U P E R F E T M O S F E T ꢀ ꢢ ꢀ ဘ ꢣ

ר

რ ͓ ꢃ ꢤ ၴ ꢂ ，

ୢѿꢥ

ࣀ

ꢦꢧꢨꢀ(PFC)、ꢩҁ

ࡈ

/ꢀꢃǁꢃꢀꢤ、ꢃꢪꢃꢫꢃꢤ、

ATXꢀꢃꢤ֪࿅✊ꢃꢤၴꢂ。SUPERFETꢀIIꢀFRFET MOSFETꢀ

øӶĳlꢏꢬꢊ֭

ױ

ቂ૭ꢉꢐ

׏

֛ꢭꢞ૶̣Ö，ꢜꢒꢖꢮ

׏

ꢯ

ꢉ。

V

R

MAX

I MAX

D

DS

DS(ON)

650 V

150 mꢀ @ 10 V

24 A

®

ꢀ

D

⑙ꢁ

•ꢏ700 V @ T = 150°C

J

G

•ꢏ͘५ȜR

= 133 mꢀ

DS(on)

•ꢏꢓꢆꢎꢏꢃꢄ (͘५ȜQ = 72 nC)

g

S

•ꢏꢆꢰꢱꢲꢅꢃ඙(͘५ȜC

= 361 pF)

oss(eff.)

•ꢏ100% ꢳꢴꢟ༉ꢵꢶ

•ꢏꢷ

ר

RoHS ꢸΦ

S

D

• This is a Pb−Free Device

G

ꢂ✈

•ꢏ̩ïꢹָ

ࡈ

•ꢏꢋǁ / ꢩҁ

ࡈ

ꢃꢤ

•ꢏଊꢺꢐָꢻ

ࡈ

•ꢏAC-DC ꢃꢤ

TO−247−3LD

CASE 340CH

MARKING DIAGRAM

$Y&Z&3&K

FCH

150N65F

$Y

&Z

&3

&K

= ON Semiconductor Logo

= Assembly Plant Code

= Numeric Date Code

= Lot Code

FCH150N65F

= Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

1

Publication Order Number:

April, 2021 − Rev. 4

FCH150N65FCN/D

FCH150N65F

MOSFET ꢃꢄ⍭ꢅꢆ(T = 25°C ꢀꢁꢀꢂꢃꢄ)

C

׶

ꢇ

ꢈꢉ

FCH150N65F−F155

ꢊꢋ

V

ꢅꢆ－⁰ꢆꢇꢁ

᧥ꢆ－⁰ꢆꢇꢁ

650

20

DSS

V

- DC

- AC

GSS

30

I

D

ꢅꢆꢇἡ

24

A

᪮ঽ (T = 25°C)

C

᪮ঽ (T = 100°C)

14.9

72

C

I

ꢅꢆꢇἡ

௙ꢂ(ꢃꢄ 1)

A

mJ

A

DM

E

ꢃ௙ꢂ↺༉்Ჟ (ꢃꢄ 2)

↺༉ꢇἡ (ꢃꢄ ꢄ1)

Ოꢅ↺༉்Ჟ (ꢃꢄ 1)

MOSFET dv/dt

663

AS

AR

I

4.7

E

2.98

100

mJ

V/ns

AR

dv/dt

ꢆꢆ

ٱ

ቂꢅ dv/dt ໐ꢇ(ꢃꢄ 3)

ꢈ૧

50

P

298

W

W/°C

°C

(T = 25°C)

C

D

▨ꢉ25°C Ŕꢈ૧

ߋ

ᝐ

2.38

−55 ೃ + 150

300

T , T

࿅ꢊꢋꢌꢍꢈႆීꢎ

J

STG

T

✈ꢉ⋪ᖅŔᣠ▨ჵ௪ꢈႆ，᢭ҋꢏꢐ1/8”，ᓡঽ 5 Ң

°C

L

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

(ꢑ૓ᚡᝧ)

ꢒ᥼ꢇꢁᡕ᪗ᣠꢓ⍭ꢔꢇጸꢕꢖꢗŔꢇීꢎ，ꢘꢙꢚ்ꢛᔿꢜ。ꢒ᥼ᡕ᪗Ûĵ᪩{℠ꢇ，෦ៀẵƽᚑꢘꢙꢈ்，ꢚ்ꢛොೄꢘꢙᔿꢜ，ᅑ

ڭ

ꢚ∰ሇ。

1. Ოꢅ⍭ꢔꢇ：௙ꢂඝႆַ℠ꢉᣠꢓꢉꢈ。

2. I = 4.7 A，R = 25 ꢀ，ꢊ஫T = 25°C。

AS

G

J

3. I ≤ 12 A，di/dt ≤ 200 A/ꢁ s，V ≤ 380 V，ꢊ஫T = 25°C。

SD

DD

J

ꢌ᎕᧧ᚖꢍꢅ៽ꢎꢏ

ꢐꢑ০ꢇ

⍆᧧

ꢌ᎕

TO−247−3LD

ꢒ᎕ꢓẵ

਱ꢋ

ٱ

ꢔꢕꢖ

ꢗꢘ

ꢉᲟ

FCH150N65F−F155

FCH150N65F

N/A

30 ꢌ

⋍ꢁ்

׶

ꢇ

ꢈꢉ

FCH150N65F−F155

ꢊꢋ

R

ꢉೃꢏꢐꢍꢎᣠꢓꢇ

0.42

40

°C/W

ꢂ

JC

ꢂ

JA

www.onsemi.cn

2

FCH150N65F

ꢀᷴ⑙ꢁ(T = 25°C ꢀꢁꢀꢂꢃꢄ)

C

׶

ꢇ

ꢈꢉ

Ἣᚥꢙꢑ

ꢃꢚꢆ ꢛꢜꢆ ꢃꢄꢆ

ꢊꢋ

ꢝꢞ⑙ꢁ

BV

ꢅꢆ－⁰ꢆϛꢏꢇꢁ

V

I

= 0 V, I = 10 mA, T = 25°C

650

700

−

V

DSS

GS

D

C

= 0 V, I = 10 mA, T = 150°C

GS

D

C

ꢃ BV

ϛꢏꢇꢁꢈႆ

ߋ

ᝐ

= 10 mA, ꢈႆꢑ૓ 25°C

0.72

V/°C

ꢁ A

DSS

J

D

/

ꢃ T

I

ꢐ᧥ꢆꢇꢁꢅꢆꢇἡ

V

DS

V

DS

V

GS

= 650 V, V = 0 V

−

86

−

10

−

DSS

GS

= 520 V, V = 0 V, T = 125 °C

GS

C

I

᧥ꢆ -ĳꢅꢇἡ

=

20 V, V = 0 V

100

nA

V

GSS

DS

ꢟ᫪⑙ꢁ

V

GS(th)

᧥ꢆꢑꢇꢇꢁ

V

GS

V

GS

V

DS

= V , I = 2.4 mA

3

−

5

150

−

DS

D

R

ꢅꢆೃ⁰ꢆꢒꢓොꢔꢇꢎ

ꢕ

ױ

ꢖො

= 10 V, I = 12 A

133

22

mꢀ

DS(on)

D

g

FS

= 20 V, I = 12 A

S

D

ꢠꢡ⑙ꢁ

C

ꢗͅꢇ඙

V

= 100 V, V = 0 V, f = 1 MHz

−

2810

91

3737

121

−

pF

nC

ꢀ

iss

oss

rss

oss

DS

GS

C

ꢗꢗꢇ඙

֭

ױ

Āꢗꢇ඙

0.77

54

ꢗꢗꢇ඙

V

= 380 V, V = 0 V, f = 1 MHz

−

DS

GS

C

ꢂꢘꢗꢗꢇ඙

= 0 V ೃ 400 V, V = 0 V

361

72

−

oss(eff.)

DS

GS

Q

10 V Ŕ᧥ꢆꢇꢙꢚᲟ

᧥ꢆ -⁰ꢆ᧥ꢆꢇꢙ

᧥ꢆ -ꢅꢆ“ꢛҲ”ꢇꢙ

ꢜꢘꢝꢝꢇꢎ

V

DS

V

GS

= 380 V, I = 12 A

,

94

−

g(tot)

D

= 10 V, R = 4.7 ꢀ (ꢃꢄ 4)

G

Q

15

gs

Q

31

−

gd

ESR

ꢢꢝ⑙ꢁ

f = 1 MHz

0.69

−

t

ොꢔꢞꢟꢠꢡ

ꢊꢔ⛺ԧꢠꢡ

͓ꢢꢞꢟꢠꢡ

͓ꢢ⛻ꢣꢠꢡ

V

= 380 V, I = 12 A,

−

28

15

73

6

66

40

ns

d(on)

DD

GS

D

= 10 V, R = 4.7

ꢀ

G

t

r

(ꢃꢄ 4)

t

156

22

d(off)

t

f

⃯ꢣ-⁰ꢣꢤꢣ

ٱ

⑙ꢁ

I

ꢅꢆ -⁰ꢆꢆꢆ

ٱ

ᣠꢓꢕ

ױ

᪮ঽꢇἡ

ꢅꢆ -⁰ꢆꢆꢆ

ٱ

ᣠꢓꢕ

ױ

௙ꢂꢇἡ

ꢅꢆ -⁰ꢆꢆꢆ

ٱ

ꢕ

ױ

ꢇꢁ

֭

ױ

ቂꢅꢠꢡ

−

24

72

1.2

−

A

S

I

SM

V

SD

V

= 0 V, I = 10 A

−

V

GS

SD

t

rr

= 0 V, I = 12 A,

123

597

ns

ꢁ C

GS

F

SD

dI /dt = 100 A/ꢁ s

Q

֭

ױ

ቂꢅꢇꢙ

−

rr

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

(ꢑ૓ᚡᝧ)

ꢀꢁꢀꢂꢃꢄ，“ꢇꢤꢥሇ”ጸꢦꢕꢖꢗŔꢧꢨꢖꢩꢪꢫꢙ⛻Ŕ

ڡ

ሇ்ꢑᝐ。ꢒ᥼ई⛽

׬

ꢫꢙ⛻ꢬꢭ，

ڡ

ሇ்ꢚ்⛾“ꢇꢤꢥሇ”ጸꢦ

ꢕꢨꢖሇ்ꢑᝐ⛽⛰ೄ。

4. ꢮ͖ꢧꢯꢰꢉ࿅ꢊꢈႆ。

www.onsemi.cn

3

FCH150N65F

100

10

1

100

10

1

*Notes:

V

= 10.0 V

8.0 V

GS

1. V = 20 V

DS

2. 250 ꢁ s Pulse Test

7.0 V

6.5 V

150°C

6.0 V

5.5 V

25°C

−55°C

*Notes:

1. 250 ꢁ s Pulse Test

2. T = 25°C

C

3

4

5

6

7

8

1

10 20

0.1

V

DS

, Drain−Source Voltage (V)

V

GS

, Gate−Source Voltage (V)

ࣞ

2. Āᩣ⑙ꢁ

ࣞ

1. ꢟ᫪Ԛি⑙ꢁ

0.30

0.25

0.20

0.15

0.10

100

10

1

150°C

25°C

0.1

V

= 10 V

= 20 V

GS

0.01

*Notes:

1. V = 0 V

2. 250 ꢁ s Pulse Test

V

GS

*Note: T = 25°C

C

0.001

80

1.6

0

20

40

60

0.0

0.4

0.8

1.2

I , Drain Current (A)

D

V

SD

, Body Diode Forward Voltage (V)

ࣞ

4. ĳꢤꢣ

ٱ

ᵃ

ױ

ꢀիָӶꢍ⁰ꢀἡ

٬

ꢁႆŔꢝ

ߋ

ࣞ

3. ꢟ᫪ꢀℋָӶꢍ⃯ꢣꢀἡ

٬᧥ꢣ

ꢀիŔꢝ

ߋ

10

100000

10000

V

= 130 V

= 325 V

= 520 V

DS

C

V

8

iss

DS

V

1000

6

4

C

oss

rss

100

10

*Note:

1. V = 0 V

GS

2. f = 1 MHz

2

0

C

= C + C (C = Shorted)

gs gd ds

iss

oss

rss

1

= C + C

ds

gd

= C

*Note: I = 12 A

D

0.1

805

1

10

100

1000

0

16

32

48

64

Q , Total Gate Charge (nC)

g

V

DS

, Drain−Source Voltage (V)

ࣞ

6. ᧥ꢣꢀ็⑙ꢁ

ࣞ

5. ꢀ඙⑙ꢁ

www.onsemi.cn

4

FCH150N65F

1.15

1.10

1.05

1.00

0.95

0.90

2.5

2.0

1.5

1.0

0.5

*Notes:

1. V = 0 V

1. V = 10 V

GS

2. I = 10 mA

2. I = 12 A

D

−100 −50

0

50

100

150

200

−100 −50

0

50

100

150

200

T , Junction Temperature (°C)

J

T , Junction Temperature (°C)

J

ࣞ

7. ϛՏꢀիָӶꢍꢁႆŔꢝ

ߋ

ࣞ

8. ꢟ᫪ꢀℋָӶꢍꢁႆŔꢝ

ߋ

100

10

25

20

15

10

5

10 ꢁ s

100 ꢁ s

1 ms

DC

1

Operation in This Area

is Limited by R

DS(on)

*Notes:

1. T = 25°C

2. T = 150°C

0.1

0.01

C

J

3. Single Pulse

0

150

25

50

75

100

125

0.1

1

10

100

1000

T , Case Temperature (°C)

C

V

DS

, Drain−Source Voltage (V)

ࣞ

9. ꢃꢄ൩͈࿅ļԚ

ࣞ

10. ꢃꢄ⃯ꢣꢀἡꢍꢥꢁŔꢝ

ߋ

15

12

9

6

3

0

110

V

220

330

440

550 660

, Drain to Source Voltage (V)

DS

ࣞ

11. Eoss ꢍ⃯⁰ꢣꢀիŔꢝ

ߋ

www.onsemi.cn

5

FCH150N65F

1

0.1

0.5

0.2

P

DM

0.1

0.05

t

1

0.02

t

2

0.01

0.001

0.01

*Notes:

1. Z (t) = 0.42°C/W Max.

Single Pulse

ꢂ

JC

2. Duty Factor, D = t /t

1

2

3. T − T = P

* Z (t)

ꢂ

JC

JM

C

DM

−5

−4

−3

−2

−1

10

1

Rectangular Pulse Duration (sec)

ࣞ

12. ɼꢡ⋍ꢦꢂꢧএ

www.onsemi.cn

6

FCH150N65F

V

GS

R

Q

g

L

V

DS

Q

gd

gs

V

GS

DUT

I

G

= ꢱᲟ

Charge

ࣞ

13. ᧥ꢣꢀ็ἫᚥꢀᢿꢍỂꢨ

R

L

V

DS

GS

90%

V

DS

V

DD

V

GS

R

G

10%

V

DUT

V

GS

t

r

t

f

t

d(off)

d(on)

t

on

t

off

ࣞ

14. ℋꢁꢢꢝἫᚥꢀᢿꢍỂꢨ

L

2

1

2

E_AS

+

LI_AS

V

DS

BV

DSS

I

D

I

AS

R

G

V

DD

I (t)

D

DUT

V

DD

V

GS

V

DS

(t)

t

p

Time

t

p

ࣞ

15. ∮

٭

ꢋꢀꢩꢢꢝἫᚥꢀᢿꢍỂꢨ

www.onsemi.cn

7

FCH150N65F

+

DUT

V

DS

−

I

SD

L

Driver

R

G

Same Type

as DUT

V

DD

V

GS

− dv/dt controlled by R

G

− I controlled by pulse period

SD

Gate Pulse Width

D +

Gate Pulse Period

V

GS

10 V

(Driver)

I

, Body Diode Forward Current

FM

I

di/dt

SD

(DUT)

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

DS

V

DD

V

SD

(DUT)

Body Diode

Forward Voltage Drop

ࣞ

16. ꢤꢣ

ٱ

ꢪꢫdv/dt ꢬꢆἫᚥꢀᢿꢍỂꢨ

SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or

other countries.

FRFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other

countries.

www.onsemi.cn

8

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

TO−247−3LD

CASE 340CH

ISSUE A

DATE 09 OCT 2019

GENERIC

MARKING DIAGRAM*

XXXXXXXXX

AYWWG

XXXX = Specific Device Code

A

Y

= Assembly Location

= Year

WW = Work Week

G

= Pb−Free Package

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may

or may not be present. Some products may

not follow the Generic Marking.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON13853G

TO−247−3LD

PAGE 1 OF 1

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

www.onsemi.com

onsemi,

, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates

and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any

products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use

of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products

and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information

provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may

vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license

under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems

or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should

Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

ADDITIONAL INFORMATION

TECHNICAL PUBLICATIONS:

Technical Library: www.onsemi.com/design/resources/technical−documentation

onsemi Website: www.onsemi.com

ONLINE SUPPORT: www.onsemi.com/support

For additional information, please contact your local Sales Representative at

www.onsemi.com/support/sales




型号：	FCH150N65F-F155
厂家：	ONSEMI
描述：	N 沟道 SuperFET® II FRFET® MOSFET
文件：	总10页 (文件大小：516K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FCH150N65F-F155 [ONSEMI]

相关型号：

FCH165N60E

FCH165N65S3R0-F155

FCH170N60

FCH190N65F-F085

FCH190N65F-F155

FCH20A03L

FCH20A04

FCH20A06

FCH20A09

FCH20A10

FCH20A15

FCH20A18