FCH47N60F-F133 [ONSEMI]
功率 MOSFET，N 沟道，SUPERFET®，FRFET®， 600 V，47 A，73 mΩ，TO-247;
| 型号： | FCH47N60F-F133 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPERFET®，FRFET®， 600 V，47 A，73 mΩ，TO-247 |
| 文件： | 总9页 (文件大小：412K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET – N-Channel,
SUPERFET), FRFET)
600 V, 47 A, 73 mW
FCH47N60F
Description
SUPERFET MOSFET is ON Semiconductor’s first generation of
high voltage super−junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on−resistance
and lower gate charge performance. This technology is tailored to
minimize conduction loss, provide superior switching
performance,dv/dt rate and higher avalanche energy. Consequently,
SUPERFET MOSFET is very suitable for the switching power
applications such as PFC, server / telecom power, FPD TV power,
ATX power and industrial power applications. SUPERFET FRFET
MOSFET’s optimized body diode reverse recovery performance can
remove additional component and improve system reliability.
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V
R
MAX
I MAX
D
DS
DS(ON)
600 V
73 mW @ 10 V
47 A
D
G
Features
S
• 650 V @ T = 150°C
J
• Typ. R
= 58 mW
DS(on)
N-CHANNEL MOSFET
• Ultra Low Gate Charge (Typ. Q = 210 nC)
g
• Low Effective Output Capacitance (Typ. C eff. = 420 pF)
oss
S
D
• 100% Avalanche Tested
G
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Solar Inventer
• AC−DC Power Supply
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FCH
47N60F
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FCH47N60F
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
December, 2019 − Rev. 4
FCH47N60F/D
FCH47N60F
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
FCH47N60F−F133
Unit
V
DSS
Drain to Source Voltage
600
V
I
D
Drain Current −
−Continuous (T = 25°C)
47
29.7
A
A
C
−Continuous (T = 100°C)
C
I
Drain Current
−Pulsed (Note 1)
141
30
A
V
DM
V
GSS
Gate−Source Voltage
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
1800
47
mJ
A
AS
AR
I
E
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
41.7
50
mJ
V/ns
AR
dv/dt
P
(T = 25°C)
C
417
W
D
−Derate Above 25°C
3.33
W/°C
T , T
Operating and Storage Temperature Range
−55 to + 150
°C
°C
J
STG
T
L
Maximum Lead Temperature for Soldering Purpose, ⅛ from Case for 5 second
300
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. I = 18 A, V = 50 V, R = 25 W, Starting T = 25 °C
AS
DD
G
J
3. I ≤ 47 A, di/dt ≤ 1200 A/ms, V ≤ BV
, Starting T = 25 °C.
J
SD
DD
DSS
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FCH47N60F
FCH47N60F−F133
TO−247−3
−
−
30 Units
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
Thermal Resistance, Junction to Case, Max.
0.3
°C/W
R
q
JC
JA
R
Thermal Resistance, Junction to Ambient, Max. (Note 34)
41.7
q
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2
FCH47N60F
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
600
−
−
−
−
−
V
V
I
I
= 250 mA, V = 0 V, T = 25°C
DSS
D
GS
J
= 250 mA, V = 0 V, T = 150°C
650
0.6
D
GS
J
DBV
BV
I
Breakdown Voltage Temperature
Coefficient
I
D
= 250 mA, Referenced to 25°C
−
V/°C
DSS
J
/ DT
Drain−Source Avalanche Breakdown
Voltage
I
D
= 47 A, V = 0 V
−
700
−
V
DS
GS
Zero Gate Voltage Drain Current
V
V
V
V
= 600 V, V = 0 V
−
−
−
−
−
−
−
−
10
100
100
−100
mA
mA
nA
nA
DSS
DS
GS
= 480 V, T = 125°C
DS
GS
GS
C
I
Gate−Body Leakage Current, Forward
Gate−Body Leakage Current, Reverse
= 30 V, V = 0 V
DS
GSSF
I
= −30 V, V = 0 V
DS
GSSR
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
DS
V
GS
V
DS
= V , I = 250 mA
3
−
−
−
0.062
40
5
0.073
−
V
W
S
GS(th)
DS(on)
GS
D
R
Static Drain−Source On−Resistance
Forward Transconductance
= 10 V, I = 23.5 A
D
g
FS
= 40 V, I = 23.5 A
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 25 V, V = 0 V,
−
−
−
−
5900
3200
250
8000
4200
−
pF
pF
pF
pF
iss
oss
rss
oss
DS
GS
f = 1 MHz
C
C
C
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
V
DS
= 480 V, V = 0 V,
160
−
GS
f = 1 MHz
C
eff.
Effective Output Capacitance
V
DS
= 0 V to 400 V, V = 0 V
−
420
−
pF
oss
GS
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn−On Rise Time
Turn-Off Delay Time
Turn−Off Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
V
= 300 V, I = 47 A,
−
−
−
−
−
−
−
185
210
520
75
430
450
1100
160
270
−
ns
ns
d(on)
DD
G
D
R
= 25 W
t
r
(Note 4)
t
ns
d(off)
t
f
ns
Q
V
DS
V
GS
= 480 V, I = 47 A
210
38
nC
nC
nC
g
D
,
= 10 V
Q
Q
gs
gd
(Note 4)
110
−
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
Maximum Continuous Drain−Source Diode Forward Current
Maximum Pulsed Drain−Source Diode Forward Current
−
−
−
−
−
−
−
47
141
1.4
−
A
A
S
I
SM
V
SD
Source to Drain Diode Voltage
Reverse Recovery Time
V
V
= 0 V, I = 47 A
−
V
GS
S
t
= 0 V, I = 47 A,
240
2.04
ns
mC
rr
GS
S
dI /dt = 100 A/ms
F
Q
Reverse Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially Independent of Operating Temperature Typical Characteristics.
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3
FCH47N60F
TYPICAL CHARACTERISTICS
VGS
Top:
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
2
1
10
2
10
150°C
Bottom: 5.5 V
10
25°C
1
10
−55°C
*Notes:
*Notes:
1. 250 ms Pulse Test
1. V = 40 V
DS
2. T = 25°C
0
C
10
2. 250 ms Pulse Test
0
10
−1
0
1
2
4
6
8
10
10
10
10
V
GS
, Gate−Source Voltage [V]
V
DS
, Drain−Source Voltage [V]
Figure 2. Transfer Characteristics
Figure 1. On−Region Characteristics
0.25
0.20
102
V
GS
= 10 V
0.15
0.10
1
10
150°C
25°C
V
GS
= 20 V
*Notes:
1. V = 0 V
GS
0.05
0.00
2. 250 ms Pulse Test
*Note: T = 25°C
J
0
10
0
20 40 60 80 100 120 140 160 180 200
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
SD
, Source−Drain Voltage [V]
I , Drain Current [A]
D
Figure 4. Body Diode Forward Voltage Variation
vs. Source Current and Temperature
Figure 3. On−Resistance Variation vs. Drain Current
and Gate voltage
25000
12
C
C
C
= C + C (C = shorted)
iss
oss
rss
gs
gd
ds
V
DS
= 100 V
= C + C
ds
gd
10
8
V
DS
= 250 V
= C
gd
20000
V
DS
= 400 V
C
oss
15000
10000
5000
0
*Notes:
6
4
1. V = 0 V
GS
C
iss
2. f = 1 MHz
C
rss
2
0
*Note: I = 47 A
D
1
0
−1
50
0
100
150
200
250
10
10
10
Q , Total Charge [nC]
G
V
DS
, Drain−Source Voltage [V]
Figure 6. Gate Charge Characteristics
Figure 5. Capacitance Characteristics
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4
FCH47N60F
TYPICAL CHARACTERISTICS
3.0
2.5
2.0
1.5
1.2
1.1
1.0
1.0
0.5
*Notes:
1. V = 0 V
D
0.9
0.8
GS
*Notes:
1. V = 10 V
D
2. I = 250 mA
GS
2. I = 23.5 A
0.0
−100
−50
0
50
100
150
200
200
−100
−50
0
50
100
150
T , Junction Temperature [°C]
J
T , Junction Temperature [°C]
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On−Resistance Variation
vs. Temperature
50
40
30
20
Operation in This Area
is Limited by R
DS(on)
2
10
100 ms
1 ms
10 ms
DC
1
0
10
*Notes:
10
1. T = 25°C
C
2. T = 150°C
10
J
3. Single Pulse
−1
10
0
3
0
1
2
150
10
25
50
75
100
125
10
10
10
V
DS
, Drain−Source Voltage [V]
T , Case Temperature [°C]
C
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 9. Safe Operating Area
D = 0.5
*Notes:
1. Z (t) = 0.3°C/W Max
−1
10
q
JC
0.2
0.1
2. Duty Factor, D = t /t
1
2
3. T − T = P
* Z (t)
q
JC
JM
C
DM
P
DM
0.05
0.02
0.01
t1
−2
10
t2
Single Pulse
−3
−4
−2
−1
0
1
−5
10
10
10
10
10
10
10
t , Square Wave Pulse Duration [sec]
1
Figure 11. Transient Thermal Response Curve
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5
FCH47N60F
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 12. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
r
t
f
t
t
d(off)
d(on)
t
on
t
off
Figure 13. Resistive Switching Test Circuit & Waveforms
L
BVDSS
BVDSS * VDD
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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6
FCH47N60F
+
DUT
V
SD
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
FRFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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相关型号：
FCH47N60_F085
Power Field-Effect Transistor, 47A I(D), 600V, 0.079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3
FAIRCHILD
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