FCMT250N65S3 [ONSEMI]
功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，12 A，250 mΩ，Power88;
| 型号： | FCMT250N65S3 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，12 A，250 mΩ，Power88 |
| 文件： | 总10页 (文件大小：471K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET – Power, N-Channel,
SUPERFET III, Easy Drive
650 V, 12 A, 250 mW
FCMT250N65S3
Description
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
www.onsemi.com
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
250 mꢀ @ 10 V
12 A
Consequently, SUPERFET III MOSFET Easy−drive series helps
manage EMI issues and allows for easier design implementation.
The Power88 package is an ultra−slim surface−mount package (1
D
2
mm high) with a low profile and small footprint (8x8 mm ).
SUPERFET III MOSFET in a Power88 package offers excellent
switching performance due to lower parasitic source inductance and
separated power and drive sources. Power88 offers Moisture
Sensitivity Level 1 (MSL 1).
G
S1: Driver Source
S2: Power Source
S1
S2
POWER MOSFET
Features
• 700 V @ T = 150 °C
J
• Typ R
= 210 mꢀ
DS(on)
• Ultra Low Gate Charge (Typ. Q = 24 nC)
g
• Low Effective Output Capacitance (Typ. C
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
= 248 pF)
S2
oss(eff.)
S2
S1
G
PQFN4 8X8 2P
CASE 483AP
Applications
• Telecom / Server Power Supplies
• Industrial Power Supplies
• UPS / Solar
MARKING DIAGRAM
• Lighting / Charger / Adapter
$Y&Z&3&K
FCMT
250N65S3
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot Code
FCMT250N65S3 = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
February, 2020 − Rev. 5
FCMT250N65S3/D
FCMT250N65S3
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)
C
Symbol
Parameter
Value
650
30
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
DC
V
AC (f > 1 Hz)
30
V
I
D
Drain Current
Continuous (T = 25°C)
12
A
C
Continuous (T = 100°C)
7.6
C
I
Drain Current
Pulsed (Note 1)
30
A
mJ
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
57
AS
AS
I
2.3
E
0.9
mJ
V/ns
AR
dv/dt
100
20
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
P
(T = 25°C)
C
90
W
W/°C
°C
D
Derate Above 25°C
0.72
−55 to +150
300
T , T
Operating and Storage Temperature Range
J
STG
T
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I = 2.3 A, RG = 25 ꢀ starting T = 25°C
AS
J
3. I ≤ 6 A, di/dt ≤ 200 A/ꢁ s, V ≤ 400 V, starting T = 25°C
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
1.39
45
Unit
Thermal Resistance, Junction to Case, Max.
°C/W
R
R
ꢂ
JC
JA
Thermal Resistance, Junction to Ambient, Max. (Note 4)
ꢂ
2
4. Device on 1 in pad 2 oz copper pad on 1.5 x 1.5 in. board of FR−4 material.
ORDERING INFORMATION
†
Part Number
Top Marking
Package
Reel Size
Tape Width
13.3 mm
Shipping
FCMT250N65S3
FCMT250N65S3
PQFN8
13”
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
FCMT250N65S3
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
V
V
= 0 V, I = 1 mA, T = 25°C
650
700
V
V
DSS
GS
D
J
= 0 V, I = 1 mA, T = 150°C
GS
D
J
ꢃ
B
V
Breakdown Voltage Temperature
Coefficient
I
= 1mA, referenced to 25°C
0.67
0.77
V/°C
DSS
J
D
/
ꢃ T
I
Zero Gate Voltage Drain Current
V
V
V
= 650 V, V = 0 V
10
ꢁ A
nA
V
DSS
DS
DS
GS
GS
= 520 V, T = 125 °C
C
I
Gate to Source Leakage Current
=
30 V, V = 0 V
100
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
V
V
= V , I = 0.29 mA
2.5
4.5
GS(th)
DS(on)
GS
GS
DS
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
= 10 V, I = 6 A
210
7.4
250
mꢀ
D
g
FS
= 20 V, I = 6 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400 V, V = 0 V, f = 1 MHz
1010
25
pF
pF
pF
pF
nC
nC
nC
ꢀ
iss
DS
GS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V
DS
V
DS
V
DS
= 0 V to 400 V, V = 0 V
248
33
oss(eff.)
GS
C
= 0 V to 400 V, V = 0 V
GS
oss(er.)
Q
= 400 V, I = 6 A, V = 10 V,
24
g(tot)
D
GS
(Note 5)
Q
6.1
9.7
1.1
gs
Q
gd
ESR
f = 1 MHz
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn−On Rise Time
Turn-Off Delay Time
Turn−On Fall Time
V
= 400 V, I = 6 A, V = 10 V,
GEN
15
13
40
7.2
ns
ns
ns
ns
d(on)
DD
D
GS
R
= 4.7 ꢀ
t
r
(Note 5)
t
d(off)
t
f
SOURCE−DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
12
30
A
A
S
I
SM
V
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
V
= 0 V, I = 6 A
1.2
V
SD
GS
SD
t
= 400 V, I = 6 A,
251
3.4
ns
ꢁ C
rr
DD
F
SD
di /dt = 100 A/ꢁ s
Q
Reverse Recovery Charge
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Essentially independent of operating temperature typical characteristics.
www.onsemi.com
3
FCMT250N65S3
TYPICAL PERFORMANCE CHARACTERISTICS
30
40
10
V
GS
=10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
= 20 V
DS
250 ꢁ s Pulse Test
10
150°C
1
25°C
−55°C
250 ꢁ s Pulse Test
= 25°C
T
C
1
0.1
0.2
1
10
20
3
4
V
5
6
7
8
9
V
DS
, Drain−Source Voltage (V)
, Gate−Source Voltage (V)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.5
0.4
0.3
0.2
0.1
0.0
100
10
1
V = 0 V
GS
250 ꢁ s Pulse Test
T
C
= 25°C
150°C
V
= 10 V
25°C
GS
V
GS
= 20 V
0.1
−55°C
0.01
0.001
0.0
0.5
1.0
1.5
0
5
10
15
20
25
V
SD
, Body Diode Forward Voltage (V)
I , Drain Current (A)
D
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
Figure 3. On−Resistance Variation vs.
Drain Current and Gate Voltage
105
104
103
102
101
10
8
I
D
= 6 A
V
DS
= 130 V
C
iss
V
DS
= 400 V
6
C
oss
4
V
= 0 V
GS
f = 1 MHz
2
C
C
C
= C + C (C = shorted)
100
C
iss
gs
gd
ds
rss
= C + C
oss
rss
ds
gd
= C
gd
100
10−1
0
10−1
101
102
103
0
6
12
18
24
30
Q , Total Gate Charge (nC)
V
DS
, Drain−Source Voltage (V)
g
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
www.onsemi.com
4
FCMT250N65S3
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
1.2
1.1
1.0
0.9
0.8
3.0
V
I
= 10 V
= 6 A
V
I
= 0 V
= 10 mA
GS
GS
D
D
2.5
2.0
1.5
1.0
0.5
0.0
−50
50
100
150
0
−50
0
50
100
150
T , Junction Temperature (5C)
J
T , Junction Temperature (5C)
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On−Resistance Variation
vs. Temperature
15
10
5
100
10
1
30 ꢁ s
100 ꢁ s
1 ms
10 ms
DC
Operation in this Area
is Limited by R
DS(on)
0.1
T
C
= 25°C
T = 150°C
J
Single Pulse
0
0.01
150
1
10
100
1000
25
50
75
100
125
T , Case Temperature (5C)
V
, Drain−Source Voltage (V)
C
DS
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
6
4
2
0
0
130
DS
260
390
520
650
V
, Drain to Source Voltage (V)
Figure 11. EOSS vs. Drain to Source Voltage
www.onsemi.com
5
FCMT250N65S3
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
2
1
DUTY CYCLE − DESCENDING ORDER
D = 0.5
0.2
0.1
P
0.05
0.02
0.01
DM
0.1
0.01
t
1
t
2
Z
R
(t) = r(t) x R
ꢂ
JC
= 1.39°C/W
ꢂ
JC
SINGLE PULSE
10−4
ꢂ
JC
Peak T = P
x Z (t) + T
ꢂ
JC C
J
DM
Duty Cycle, D = t / t
1
2
0.001
10−5
10−3
10−2
10−1
100
t, Rectangular Pulse Duration (sec)
Figure 12. Transient Thermal Response Curve
www.onsemi.com
6
FCMT250N65S3
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
t
d(off)
t
r
t
f
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
www.onsemi.com
7
FCMT250N65S3
+
DUT
V
DS
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
www.onsemi.com
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN4 8X8, 2P
CASE 483AP
ISSUE A
DATE 06 JUL 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13664G
PQFN4 8X8, 2P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
FCN-054P102-G/K-HN
Board Connector, 2 Contact(s), 1 Row(s), Male, Straight, 0.1 inch Pitch, Solder Terminal, Black Insulator, Receptacle
FUJITSU
FCN-054P103-G/K
Board Connector, 3 Contact(s), 1 Row(s), Male, Straight, Solder Terminal, Plug
FUJITSU
FCN-054P103-G/K-HN
HEADER CONNECTOR,PCB MNT,RECEPT,3 CONTACTS,PIN,0.1 PITCH,PC TAIL TERMINAL,BLACK
FUJITSU
FCN-054P108-G/K
Board Connector, 8 Contact(s), 1 Row(s), Male, Straight, Solder Terminal, Plug
FUJITSU
FCN-054P108-G/K-HN
Board Connector, 8 Contact(s), 1 Row(s), Male, Straight, 0.1 inch Pitch, Solder Terminal, Black Insulator, Receptacle
FUJITSU
FCN-054P124-G/K
Board Connector, 24 Contact(s), 1 Row(s), Male, Straight, 0.1 inch Pitch, Solder Terminal, Black Insulator, Receptacle
FUJITSU
FCN-054P124-G/K-HN
Board Connector, 24 Contact(s), 1 Row(s), Male, Straight, 0.1 inch Pitch, Solder Terminal, Black Insulator, Receptacle
FUJITSU
FCN-054P212-G/K
Board Connector, 12 Contact(s), 2 Row(s), Male, Straight, Solder Terminal, Plug
FUJITSU
FCN-054P214-G/K
Board Connector, 14 Contact(s), 2 Row(s), Male, Straight, Solder Terminal, Plug
FUJITSU
©2020 ICPDF网 联系我们和版权申明