FCP104N60F [ONSEMI]
功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，600 V，37 A，104 mΩ，TO-220;
| 型号： | FCP104N60F |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，600 V，37 A，104 mΩ，TO-220 局域网 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：729K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
December 2014
FCP104N60F
N-Channel SuperFET ll FRFET MOSFET
600 V, 37 A, 104 mΩ
®
®
Features
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy.
Consequently, SuperFET II MOSFET is very suitable for the
switching power applications such as PFC, server/telecom
power, FPD TV power, ATX power and industrial power
applications. SuperFET® II FRFET® MOSFET’s optimized body
diode reverse recovery performance can remove additional
component and improve system reliability.
•
•
•
•
•
650 V @ TJ = 150°C
Typ. RDS(on) = 91 mΩ
Ultra Low Gate Charge (Typ. Qg = 110 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 313 pF)
100% Avalanche Tested
Applications
•
Lighting
•
•
Solar Inverter
AC-DC Power Supply
D
G
G
D
S
TO-220
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
Parameter
FCP104N60F
Unit
V
Drain to Source Voltage
Gate to Source Voltage
600
±20
- DC
V
VGSS
ID
- AC
(f > 1Hz)
±30
V
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
37
Drain Current
A
24
IDM
EAS
IAR
Drain Current
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
114
A
mJ
A
Single Pulsed Avalanche Energy
Avalanche Current
809
6.8
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt
3.57
50
mJ
dv/dt
PD
V/ns
100
(TC = 25oC)
- Derate Above 25oC
357
W
W/oC
oC
Power Dissipation
2.85
-55 to +150
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
300
oC
Thermal Characteristics
Symbol
Parameter
FCP104N60F
0.35
Unit
RθJC
RθJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient ,Max.
oC/W
62.5
www.fairchildsemi.com
©2013 Fairchild Semiconductor Corporation
FCP104N60F Rev. C3
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FCP104N60F
FCP104N60F
TO220
Tube
N/A
N/A
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
V
GS = 0 V, ID = 10 mA, TJ = 25oC
VGS = 0 V, ID = 10 mA, TJ = 150oC
600
650
-
-
-
-
BVDSS
Drain to Source Breakdown Voltage
V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 10 mA, Referenced to 25oC
-
-
0.67
700
-
-
V/oC
V
Drain-Source Avlanche Breakdown Volt-
age
BVDS
V
V
GS = 0 V, ID = 18.5 A
DS = 600V, VGS = 0 V
-
-
-
-
16
-
10
-
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μA
VDS = 480 V, TC = 125oC
VGS = ±20 V, VDS = 0 V
±100
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 18.5 A
VDS = 20 V, ID = 18.5 A
3
-
-
5
104
-
V
mΩ
S
Static Drain to Source On Resistance
Forward Transconductance
91
33
-
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
4610
3255
155
74
6130
pF
pF
pF
pF
pF
nC
nC
VDS = 25 V, VGS = 0 V
f = 1 MHz
Coss
Output Capacitance
4330
Crss
Reverse Transfer Capacitance
Output Capacitance
235
Coss
VDS = 380 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
-
Coss eff.
Qg(tot)
Qgs
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
313
110
24
-
145
-
VDS = 380 V, ID = 18.5 A
V
GS = 10 V
Qgd
Gate to Drain “Miller” Charge
Equivalent Series Resistance
-
44
-
nC
(Note 4)
ESR
Drain open
0.9
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
34
20
78
50
ns
ns
ns
ns
VDD = 380 V, ID = 18.5 A
V
GS = 10 V, RGEN = 4.7 Ω
102
5.7
214
21.4
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
37
114
1.2
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, ISD = 18.5 A
-
V
144
0.91
ns
μC
V
GS = 0 V, ISD = 18.5 A
dIF/dt = 100 A/μs
Qrr
Reverse Recovery Charge
-
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I = 6.8 A, V = 50 V, R = 25 Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 18.5 A, di/dt ≤ 200 A/μs, V ≤ BV
, Starting T = 25°C
SD
DD
DSS
J
4. Essentially Independent of Operating Temperature Typical Characteristics
www.fairchildsemi.com
©2013 Fairchild Semiconductor Corporation
FCP104N60F Rev. C3
2
Typical Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
100
100
*Notes:
1. VDS = 20V
VGS = 20.0V
15.0V
10.0V
8.0V
7.0V
6.5V
5.5V
2. 250μs Pulse Test
10
10
150oC
25oC
*Notes:
1. 250μs Pulse Test
-55oC
2. TC = 25oC
1
1
0.1
2
4
6
8
1
10
VGS, Gate-Source Voltage[V]
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
0.2
100
10
150oC
VGS = 10V
1
25oC
0.1
VGS = 20V
0.1
-55oC
0.01
*Notes:
1. VGS = 0V
*Note: TC = 25oC
66 88 110
2. 250μs Pulse Test
0.0
0.001
0
22
44
ID, Drain Current [A]
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
100000
10
VDS = 120V
10000
1000
100
10
VDS = 300V
DS = 480V
8
V
Ciss
Coss
Crss
6
4
2
0
*Note:
1. VGS = 0V
2. f = 1MHz
C
C
C
= C + C (C = shorted)
gs gd ds
iss
1
= C + C
ds gd
oss
rss
= C
gd
*Note: ID = 18.5A
80 100 120
0.1
0.1
1
10
100
600
0
20
40
60
VDS, Drain-Source Voltage [V]
Qg, Total Gate Charge [nC]
www.fairchildsemi.com
©2013 Fairchild Semiconductor Corporation
FCP104N60F Rev. C3
3
Typical Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
2.5
2.0
1.5
0.9
1.0
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
2. ID = 10mA
2. ID = 18.5A
0.8
-75 -50 -25
0.5
-75 -50 -25
0
25 50 75 100 125 150
0
25 50 75 100 125 150
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
40
30
20
10
0
1000
10μs
100
100μs
10
1ms
10ms
1
0.1
Operation in This Area
is Limited by R DS(on)
DC
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.01
25
50
75
100
125
150
0.1
1
10
100
1000
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
1
0.1
0.5
0.2
0.1
PDM
t1
t2
0.05
0.02
0.01
0.01
0.001
*Notes:
1. ZθJC(t) = 0.35oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
10-5
10-4
10-3
10-2
10-1
1
10
Rectangular Pulse Duration [sec]
www.fairchildsemi.com
©2013 Fairchild Semiconductor Corporation
FCP104N60F Rev. C3
4
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
www.fairchildsemi.com
©2013 Fairchild Semiconductor Corporation
FCP104N60F Rev. C3
5
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
www.fairchildsemi.com
©2013 Fairchild Semiconductor Corporation
FCP104N60F Rev. C3
6
3.89
3.60
0.36
10.360
10.109
A
M
B A
C
8.89
6.86
B
2.860
2.660
1.41
1.17
6.477
6.121
7°
3°
12.878
12.190
15.215
14.757
15.97
15.89
8.787
8.587
5°
3°
5°
3°
3
1
1
3
2.755
2.555
13.894
12.941
1.650
1.250
3.962
3.505
(SEE NOTE E)
1.91
0.889
0.787
M
0.36
C B
0.457
0.357
2.640
2.440
5.180
4.980
NOTES:
5°
3°
5°
3°
A. PACKAGE REFERENCE: JEDEC TO220
VARIATION AB
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-2009.
4.672
4.472
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. MAX WIDTH FOR F102 DEVICE = 1.35mm.
F. DRAWING FILE NAME: TO220T03REV4.
G. FAIRCHILD SEMICONDUCTOR.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
相关型号：
FCP10SGBK
Board Connector, 10 Contact(s), 2 Row(s), Male, 0.1 inch Pitch, IDC Terminal, Locking, Black Insulator
ADAM-TECH
©2020 ICPDF网 联系我们和版权申明