FCP13N60N [ONSEMI]
功率 MOSFET，N 沟道，SUPREMOS®，FAST，600 V，13 A，258 mΩ，TO-220;
| 型号： | FCP13N60N |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPREMOS®，FAST，600 V，13 A，258 mΩ，TO-220 局域网 开关 脉冲 晶体管 |
| 文件： | 总12页 (文件大小：527K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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2014 年 1 月
FCP13N60N / FCPF13N60NT
®
N 沟道 SupreMOS MOSFET
600 V， 13 A， 258 mΩ
特性
说明
•
•
•
•
•
RDS(on) = 220 mΩ (Typ.) @ VGS = 10 V, ID = 6.5 A
超低栅极电荷 （典型值 Qg = 30.4 nC）
低有效输出电容 （典型值 Coss(eff.)= 145 pF）
100% 经过雪崩测试
SupreMOS® MOSFET 是飞兆半导体的下一代高压超级结（SJ）
技术，该技术采用区别于传统 SJ MOSFET 产品的深沟槽填充工
艺。这项先进技术和精密的工艺控制提供了最低的 Rsp on-
resistance （导 通 电 阻 规 格） ，卓 越 的 开 关 性 能 和 耐 用 性。
SupreMOS MOSFET 技术适用于高频开关电源转换器应用，如
功率因数校正 (PFC)、服务器 / 电信电源、平板电视电源、 ATX
电源及工业电源应用。
符合 RoHS 标准
应用
•
•
•
•
LCD/LED/PDP 电视
照明
太阳能逆变器
AC-DC 电源
D
G
G
G
D
S
D
TO-220F
TO-220
S
S
MOSFET 最大额定值针对 TC = 25°C 除非另有说明。
FCP13N60N FCPF13N60NT
符号
VDSS
VGSS
参数
单位
600
±30
V
漏极－源极电压
栅极－源极电压
V
- 连续 (TC = 25°C)
- 连续 (TC = 100°C)
- 脉冲
13
8.2
3 9
13*
8.2*
3 9
ID
A
漏极电流
IDM
EAS
IAR
（注 1）
（注 2）
（注 1）
（注 1）
A
mJ
A
漏极电流
单脉冲雪崩能量
雪崩电流
235
4.3
EAR
重复雪崩能量
MOSFET dv/dt
二极管恢复 dv/dt 峰值
1.16
100
20
mJ
V/ns
V/ns
W
dv/dt
PD
（注 3）
(TC = 25°C)
116
33.8
0.27
功耗
- 超过 25°C 时降额
0.93
W/°C
°C
TJ, TSTG
TL
-55 至 +150
工作和存储温度范围
用于焊接的最大引脚温度，距离外壳 1/8”，持续 5 秒
300
°C
* 漏极电流受限于最大结温。
热性能
FCP13N60N FCPF13N60NT
符号
参数
单位
RθJC
RθJA
热阻，结至外壳，最大值
结至环境热阻最大值
1.07
62.5
3.7
°C/W
62.5
www.fairchildsemi.com
©2009 飞兆半导体公司
1
FCP13N60N / FCPF13N60NT Rev. C2
封装标识与定购信息
器件编号
顶标
封装
包装方法
塑料管
卷尺寸
不适用
不适用
带宽
数量
FCP13N60N
FCP13N60N
TO-220
50 单元
不适用
不适用
FCPF13N60NT
FCPF13N60NT
TO-220F
50 单元
塑料管
电气特性TC = 25°C 除非另有说明。
符号
参数
测试条件
最小值 典型值 最大值
单位
关断特性
BVDSS
ID = 1 mA, VGS = 0 V, TC = 25°C
600
-
-
-
-
V
漏极－源极击穿电压
ΔBVDSS
/ ΔTJ
击穿电压温度系数
ID = 1 mA，参考 25°C
0.73
V/°C
VDS = 480 V, VGS = 0 V
-
-
-
-
-
-
10
IDSS
IGSS
μA
零栅极电压漏极电流
VDS = 480 V, VGS = 0 V, TC = 125°C
VGS = ±30 V, VDS = 0 V
100
±100
nA
栅极 - 体漏电流
导通特性
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 6.5 A
VDS = 40 V, ID = 6.5 A
2.0
-
4.0
0.258
-
V
Ω
S
栅极阈值电压
-
-
0.220
16.3
漏极至源极静态导通电阻
正向跨导
动态特性
Ciss
-
-
-
-
-
-
-
-
-
1325
50
1765
pF
pF
pF
pF
pF
nC
nC
nC
Ω
输入电容
VDS = 100 V, VGS = 0 V,
f = 1 MHz
Coss
Crss
65
输出电容
3
5
反向传输电容
输出电容
Coss
Coss(eff.)
Qg(tot)
Qgs
VDS = 380 V, VGS = 0 V, f = 1 MHz
30
-
VDS = 0 V 至 480 V, VGS = 0 V
145
30.4
6.0
9.5
2.8
-
有效输出电容
10 V 的栅极电荷总量
39.5
V
V
DS = 380 V,ID = 6.5 A,
GS = 10 V
-
-
-
栅极 - 源极栅极电荷
栅极 - 漏极 “ 密勒 ” 电荷
等效串联电阻 (G-S)
（说明 4）
Qgd
ESR
f = 1 MHz
开关特性
td(on)
tr
td(off)
tf
-
-
-
-
14.5
10.6
45
39
ns
ns
ns
ns
导通延迟时间
开通上升时间
关断延迟时间
关断下降时间
VDD = 380 V, ID = 6.5 A,
31.2
100
29.6
V
GS = 10 V, RG = 4.7 Ω
9.8
（说明 4）
漏极 - 源极二极管特性
IS
-
-
-
-
-
-
-
13*
39
1.2
-
A
A
漏极 - 源极二极管最大正向连续电流
漏极 - 源极二极管最大正向脉冲电流
漏极 - 源极二极管正向电压
ISM
VSD
trr
VGS = 0 V, ISD = 6.5 A
-
V
287
3.5
ns
μC
反向恢复时间
反向恢复电荷
VGS = 0 V, ISD = 6.5 A,
dIF/dt = 100 A/μs
Qrr
-
注意：
1. 重复额定值：脉冲宽度受限于最大结温。
2. I = 4.3 A， R = 25 Ω，启动 T = 25°C。
AS
G
J
3. I ≤ 13 A， di/dt ≤ 200 A/μs， V ≤ BV
，启动 T = 25°C。
J
SD
DD
DSS
4. 本质上独立于工作温度的典型特性。
www.fairchildsemi.com
©2009 飞兆半导体公司
2
FCP13N60N / FCPF13N60NT Rev. C2
典型性能特征
图 1. 导通区域特性
图 2. 传输特性
60
40
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
10
5.5 V
5.0 V
-55oC
25oC
150oC
10
1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
0.2
3
0.6
2
4
6
8
1
10
20
VGS, Gate-Source Voltage[V]
VDS, Drain-Source Voltage[V]
图 3. 导通电阻变化与漏极电流和栅极电压
图 4. 体二极管正向电压变化与源极电流和温度
100
0.8
0.6
150oC
25oC
10
0.4
VGS = 10V
VGS = 20V
0.2
*Notes:
1. VGS = 0V
*Notes: TC = 25oC
30
2. 250μs Pulse Test
1
0.4
0.0
0.8
1.2
1.6
0
10
20
40
VSD, Body Diode Forward Voltage [V]
ID, Drain Current [A]
图 5. 电容特性
图 6. 栅极电荷
10
50000
C
C
C
= C + C (C = shorted)
gs gd ds
iss
VDS = 120V
VDS = 380V
= C + C
ds gd
= C
gd
oss
rss
10000
1000
100
10
8
6
4
2
0
VDS = 480V
Ciss
Coss
*Notes:
Crss
1. VGS = 0V
*Notes: ID = 6.5A
30
2. f = 1MHz
1
0.1
0
10
20
40
1
10
100
600
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
www.fairchildsemi.com
©2009 飞兆半导体公司
FCP13N60N / FCPF13N60NT Rev. C2
3
典型性能特征 （接上页）
图 7. 击穿电压变化与温度
图 8. 导通电阻变化与温度
3.0
1.2
2.5
2.0
1.5
1.0
0.5
0.0
1.1
1.0
0.9
0.8
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
2. ID = 1mA
2. ID = 6.5A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
图 9. 最大安全工作区 - FCP13N60N
图 10. 最大安全操作区 - FCPF13N60NT
100
100
10μs
10μs
100μs
10
100μs
10
1ms
1ms
10ms
10ms
1
1
DC
Operation in This Area
is Limited by R DS(on)
Operation in This Area
is Limited by R DS(on)
DC
*Notes:
0.1
*Notes:
0.1
1. TC = 25oC
2. TJ = 150oC
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.01
3. Single Pulse
0.01
0.1
1
10
100
1000
0.1
1
10
100
1000
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
图 11. 最大漏极电流与壳体温度
15
12
9
6
3
0
25
50
75
100
125
150
o
TC, Case Temperature [ C]
www.fairchildsemi.com
©2009 飞兆半导体公司
4
FCP13N60N / FCPF13N60NT Rev. C2
典型性能特征 （接上页）
图 12. 瞬态热响应曲线 - FCP13N60N
2
1
0.5
0.2
0.1
PDM
0.1
t1
0.05
*Notes:
t2
0.02
0.01
1. ZθJC(t) = 1.07oC/W Max.
2. Duty Factor, D= t1/t2
Single pulse
3. TJM - TC = PDM * ZθJC(t)
0.01
10-5
10-4
10-3
10-2
10-1
t
1，矩形脉冲持续时间 [ 秒 ]
图 13. 瞬态热响应曲线 - FCPF13N60NT
5
1
0.5
0.2
0.1
PDM
0.05
t1
t2
0.1
0.02
0.01
*Notes:
1. ZθJC(t) = 3.7oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.01
10-5
10-4
10-3
10-2
10-1
100
101
102
t1，矩形脉冲持续时间 [ 秒 ]
www.fairchildsemi.com
©2009 飞兆半导体公司
FCP13N60N / FCPF13N60NT Rev. C2
5
I
= 常量
G
图 14. 栅极电荷测试电路与波形
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
图 15. 阻性开关测试电路与波形
VGS
图 16. 非箝位感性开关测试电路与波形
www.fairchildsemi.com
©2009 飞兆半导体公司
6
FCP13N60N / FCPF13N60NT Rev. C2
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
图 17. 二极管恢复 dv/dt 峰值测试电路与波形
www.fairchildsemi.com
©2009 飞兆半导体公司
FCP13N60N / FCPF13N60NT Rev. C2
7
机械尺寸
SUPPLIER "B" PACKAGE
SHAPE
Ø4.00
3.50
10.67
9.65
SUPPLIER "A" PACKAGE
SHAPE
E
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
E
16.51
15.42
9.40
8.13
E
1
2
3
4.10
2.70
[2.46]
C
14.04
12.70
2.13
2.06
FRONT VIEWS
H
4.70
4.00
1.62
1.42
1.62
1.10
2.67
2.40
"A1"
8.65
7.59
1.00
0.55
SEE NOTE "F"
5°
3°
5°
3°
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
3
2
1
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV8
H) PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
J) FAIRCHILD SEMICONDUCTOR
0.60
0.36
2.85
2.10
BACK VIEW
SIDE VIEW
图 18. TO-220，模塑， 3 引脚， Jedec 变体 AB
封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 /
或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不超出飞兆公司全球范围内的条款与条件，尤其指保修，保修涵盖
飞兆半导体的全部产品。
随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003
www.fairchildsemi.com
©2009 飞兆半导体公司
8
FCP13N60N / FCPF13N60NT Rev. C2
机械尺寸
图 19. TO220，模塑， 3 引脚，全封装， EIAJ SC91，直引脚
封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 /
或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不超出飞兆公司全球范围内的条款与条件，尤其指保修，保修涵盖
飞兆半导体的全部产品。
随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003
www.fairchildsemi.com
©2009 飞兆半导体公司
9
FCP13N60N / FCPF13N60NT Rev. C2
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
F-PFS™
FRFET
Sync-Lock™
®*
®
®
®
®
Global Power ResourceSM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
Gmax™
GTO™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Dual Cool™
®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
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ESBC™
®
TRUECURRENT *
μSerDes™
SMART START™
®
Solutions for Your Success™
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SPM
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STEALTH™
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SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
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OptoHiT™
OPTOLOGIC
OPTOPLANAR
FACT
FAST
®
®
FastvCore™
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SupreMOS
SyncFET™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
www.fairchildsemi.com
©2009 飞兆半导体公司
FCP13N60N / FCPF13N60NT Rev. C2
10
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ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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