FCP165N65S3 [ONSEMI]
功率 MOSFET,N 沟道,SUPERFET® III,Easy Drive,650 V,19 A,165 mΩ,TO-220;型号: | FCP165N65S3 |
厂家: | ONSEMI |
描述: | 功率 MOSFET,N 沟道,SUPERFET® III,Easy Drive,650 V,19 A,165 mΩ,TO-220 |
文件: | 总10页 (文件大小:383K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
FCP165N65S3
MOSFET – Power, N-Channel,
SUPERFET III, Easy-Drive
650 V, 19 A, 165 mW
www.onsemi.com
Description
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provides superior switching performance, and
withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET
Easy−drive series helps manage EMI issues and allows for easier
design implementation.
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
165 mW @ 10 V
19 A
D
Features
• 700 V @ T = 150°C
G
J
• Typ. R
= 140 mW
DS(on)
• Ultra Low Gate Charge (Typ. Q = 39 nC)
g
S
• Low Effective Output Capacitance (Typ. C
• 100% Avalanche Tested
= 341 pF)
oss(eff.)
POWER MOSFET
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Computing / Display Power Supplies
• Telecom / Server Power Supplies
• Industrial Power Supplies
G
D
S
TO−220
CASE 340AT
• Lighting / Charger / Adapter
MARKING DIAGRAM
$Y&Z&3&K
FCP
165N65S3
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
FCP165N65S3
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
August, 2019 − Rev. 4
FCP165N65S3/D
FCP165N65S3
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
C
Symbol
Parameter
Value
650
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
− DC
30
V
− AC (f > 1 Hz)
30
I
D
Drain Current
− Continuous (T = 25°C)
19
A
C
− Continuous (T = 100°C)
12.3
47.5
87
C
I
Drain Current
− Pulsed (Note 1)
A
mJ
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
AS
AS
I
2.7
E
1.54
100
mJ
V/ns
AR
dv/dt
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
20
P
(T = 25°C)
154
W
W/°C
°C
D
C
− Derate Above 25°C
1.23
−55 to +150
300
T , T
Operating and Storage Temperature Range
J
STG
T
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I = 2.7 A, R = 25 W, starting T = 25°C.
AS
G
J
3. I ≤ 9.5 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.81
Unit
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
_C/W
q
JC
JA
R
62.5
q
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
N/A
Quantity
FCP165N65S3
FCP165N65S3
TO−220
Tube
N/A
50 Units
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2
FCP165N65S3
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
650
700
V
V
V
V
I
= 0 V, I = 1 mA, T = 25_C
DSS
GS
D
J
= 0 V, I = 1 mA, T = 150_C
GS
D
J
DBV
/ DT
Breakdown Voltage Temperature
Coefficient
= 1 mA, Referenced to 25_C
0.64
0.85
V/_C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 650 V, V = 0 V
1
mA
DSS
GS
= 520 V, T = 125_C
C
I
Gate to Body Leakage Current
=
30 V, V = 0 V
100
nA
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V , I = 0.44 mA
2.5
4.5
V
mW
S
GS(th)
DS(on)
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
= 10 V, I = 9.5 A
140
12
165
D
g
FS
= 20 V, I = 9.5 A
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400 V, V = 0 V, f = 1 MHz
1500
35
pF
pF
pF
pF
nC
nC
nC
W
iss
DS
GS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V
DS
V
DS
V
DS
= 0 V to 400 V, V = 0 V
341
49
oss(eff.)
GS
C
= 0 V to 400 V, V = 0 V
GS
oss(er.)
Q
= 400 V, I = 9.5 A, V = 10 V
39
g(tot)
D
GS
(Note 4)
Q
11
gs
Q
16
gd
ESR
f = 1 MHz
4.6
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
= 400 V, I = 9.5 A, V = 10 V,
21
22
53
13
ns
ns
ns
ns
d(on)
DD
g
D
GS
R = 4.7 W
t
r
(Note 4)
t
d(off)
t
f
SOURCE-DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
19
47.5
1.2
A
A
S
I
SM
V
SD
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
V
= 0 V, I = 9.5 A
V
GS
SD
t
rr
= 400 V, I = 9.5 A,
339
5.8
ns
mC
DD
SD
dI /dt = 100 A/ms
F
Q
Reverse Recovery Charge
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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3
FCP165N65S3
TYPICAL PERFORMANCE CHARACTERISTICS
50
50
10
V
= 20 V
V
GS
=10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
DS
250 ms Pulse Test
10
150°C
25°C
−55°C
250 ms Pulse Test
= 25°C
T
C
1
0.2
1
1
10
20
3
4
V
5
6
7
8
9
V
DS
, Drain−Source Voltage (V)
, Gate−Source Voltage (V)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
100
10
0.6
0.4
0.2
0.0
V = 0 V
GS
250 ms Pulse Test
T
C
= 25°C
150°C
1
25°C
0.1
V
= 10 V
GS
V
GS
= 20 V
40
−55°C
0.01
1E−3
0.0
0.5
1.0
1.5
0
10
20
30
50
V
SD
, Body Diode Forward Voltage (V)
I , Drain Current (A)
D
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
Figure 3. On−Resistance Variation vs.
Drain Current and Gate Voltage
100000
10000
1000
100
10
8
I
D
= 9.5 A
V
DS
= 130 V
C
iss
V
DS
= 400 V
6
C
oss
4
V
GS
= 0 V
10
f = 1 MHz
2
C
C
C
C
= C + C (C = shorted)
rss
iss
gs
gd
ds
1
= C + C
oss
rss
ds
gd
= C
gd
0.1
0
0.1
1
10
100
1000
0
10
g
20
30
40
Q , Total Gate Charge (nC)
V
DS
, Drain−Source Voltage (V)
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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4
FCP165N65S3
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
3.0
1.2
1.1
1.0
0.9
0.8
V
I
= 0 V
= 10 mA
V
I
= 10 V
= 9.5 A
GS
GS
D
D
2.5
2.0
1.5
1.0
0.5
0.0
−50
50
100
150
0
−50
0
50
100
150
T , Junction Temperature (5C)
J
T , Junction Temperature (5C)
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On−Resistance Variation
vs. Temperature
20
15
10
5
100
10
1
30 ms
100 ms
1 ms
10 ms
DC
Operation in this Area
is Limited by R
DS(on)
0.1
T
C
= 25°C
T = 150°C
J
Single Pulse
0
0.01
150
1
10
100
1000
25
50
75
100
125
T , Case Temperature (5C)
V
, Drain−Source Voltage (V)
C
DS
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
8
6
4
2
0
0
130
DS
260
390
520
650
V
, Drain to Source Voltage (V)
Figure 11. EOSS vs. Drain to Source Voltage
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5
FCP165N65S3
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
2
1
DUTY CYCLE − DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
0.01
t
1
t
2
Z
q
(t) = r(t) x R
q
JC
JC
R
= 0.81°C/W
q
JC
Peak T = P
x Z (t) + T
q
JC C
J
DM
SINGLE PULSE
10−4
Duty Cycle, D = t / t
1
2
0.001
10−5
10−3
10−2
10−1
100
101
t, Rectangular Pulse Duration (sec)
Figure 12. Transient Thermal Response Curve
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6
FCP165N65S3
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
t
d(off)
t
r
t
f
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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7
FCP165N65S3
+
DUT
V
DS
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220−3LD
CASE 340AT
ISSUE A
DATE 03 OCT 2017
Scale 1:1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13818G
TO−220−3LD
PAGE 1 OF 1
ON Semiconductor and
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© Semiconductor Components Industries, LLC, 2019
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相关型号:
FCP165N65S3R0
Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 19 A, 165 mΩ, TO-220
ONSEMI
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