FCPF11N60F [ONSEMI]
功率 MOSFET,N 沟道,SUPERFET®,FRFET®, 600 V,11 A,380 mΩ,TO-220F;型号: | FCPF11N60F |
厂家: | ONSEMI |
描述: | 功率 MOSFET,N 沟道,SUPERFET®,FRFET®, 600 V,11 A,380 mΩ,TO-220F 局域网 开关 脉冲 晶体管 |
文件: | 总10页 (文件大小:484K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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November 2013
FCPF11N60F
N-Channel SuperFET FRFET MOSFET
®
®
600 V, 11 A, 380 mΩ
Features
Description
•
•
•
•
•
•
•
600 V @ TJ = 150°C
SuperFET® MOSFET is Fairchild Semiconductor’s first genera-
tion of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-
resistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switch-
ing performance, dv/dt rate and higher avalanche energy. Con-
sequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications. Super-
FET FRFET® MOSFET’s optimized body diode reverse recov-
ery performance can remove additional component and
improve system reliability.
Typ. RDS(on) = 320 mΩ
Fast Recovery Type (trr = 120 ns)
Ultra Low Gate Charge (Typ. Qg = 40 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 95 pF)
100% Avalanche Tested
RoHS compliant
Applications
•
•
LCD/LED/PDP TV
Lighting
•
•
Solar Inverter
AC-DC Power Supply
D
G
G
D
S
TO-220F
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
FCPF11N60F
Unit
VDSS
Drain to Source Voltage
Drain Current
600
11*
V
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
ID
A
7*
IDM
Drain Current
(Note 1)
33*
A
V
VGSS
EAS
IAR
Gate to Source Voltage
±30
Single Pulsed Avalanche Energy
Avalanche Current
(Note 2)
(Note 1)
(Note 1)
(Note 3)
340
mJ
A
11
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
12.5
4.5
mJ
V/ns
W
W/oC
oC
(TC = 25oC)
- Derate Above 25oC
36
PD
Power Dissipation
0.29
-55 to +150
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
300
oC
* Drain current limited by maximum junction termperature.
Thermal Characteristics
Symbol
Parameter
Unit
oC/W
oC/W
FCPF11N60F
RθJC
RθJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
3.5
62.5
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FCPF11N60F Rev. C1
1
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FCPF11N60F
FCPF11N60F
TO-220F
-
-
50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
V
GS = 0 V, ID = 250 μA, TC = 25oC
VGS = 0 V, ID = 250 μA, TC = 150oC
600
-
-
-
-
V
V
BVDSS
Drain to Source Breakdown Voltage
650
ΔBVDSS
/ ΔTJ
BVDS
Breakdown Voltage Temperature
Coefficient
I
D = 250 μA, Referenced to 25oC
-
-
0.6
-
-
V/oC
Drain-Source Avalanche Breakdown
Voltage
V
V
GS = 0 V, ID = 11 A
700
V
DS = 600 V, VGS = 0 V
-
-
-
-
-
-
1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μA
VDS = 480 V, TC = 125oC
10
VGS = ±30 V, VDS = 0 V
±100
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 5.5 A
VDS = 40 V, ID = 5.5 A
3.0
-
0.32
6
5.0
0.38
-
V
Ω
S
Static Drain to Source On Resistance
Forward Transconductance
-
-
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
1148
671
63
1490
pF
pF
pF
pF
pF
nC
nC
nC
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Coss
Crss
Output Capacitance
870
Reverse Transfer Capacitance
Output Capacitance
82
-
Coss
Coss(eff.)
Qg(tot)
Qgs
VDS = 480 V, VGS = 0 V, f = 1.0 MHz
VDS = 0 V to 400 V, VGS = 0 V
35
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
95
-
40
52
-
V
V
DS = 480 V, ID = 11 A,
GS = 10 V
7.2
21
(Note 4)
Qgd
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
34
98
80
ns
ns
ns
ns
VDD = 300 V, ID = 11 A,
G = 25 Ω
205
250
120
R
119
56
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
11
33
1.4
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, ISD = 11 A
-
V
120
0.8
ns
μC
V
GS = 0 V, ISD = 11 A,
dIF/dt = 100 A/μs
Qrr
Reverse Recovery Charge
-
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. I = 5.5 A, V = 50 V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
3. I ≤ 11 A, di/dt ≤ 200 A/μs, V ≤ BV starting T = 25°C.
DSS, J
SD
DD
4. Essentially independent of operating temperature.
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FCPF11N60F Rev. C1
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
102
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
101
101
100
10-1
Bottom : 5.5 V
150oC
25oC
-55oC
100
* Notes :
* Note
1. VDS = 40V
2. 250 μs Pulse Test
1. 250 μs Pulse Test
2. TC = 25oC
-1
10
-1
10
100
101
2
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
1.0
0.8
101
100
VGS = 10V
0.6
0.4
0.2
0.0
VGS = 20V
150 oC
25 oC
* Notes :
1. VGS = 0V
2. 250 μs Pulse Test
* Note : TJ = 25oC
-1
10
0
5
10
15
20
25
30
35
40
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
6000
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
VDS = 100V
C
VDS = 250V
VDS = 400V
10
8
5000
4000
3000
2000
1000
0
Coss
6
* Notes :
1. VGS = 0 V
2. f = 1 MHz
C
4
iss
C
2
rss
* Note : ID = 11A
0
10-1
100
101
0
5
10
15
20
25
30
35
40
45
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FCPF11N60F Rev. C1
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.2
1.1
1.0
1.0
* Notes :
0.9
0.8
1. VGS = 0 V
2. ID = 250 μA
* Notes :
1. VGS = 10 V
2. ID = 5.5 A
0.5
0.0
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
T, Junction Temperature [oC]
TJ, Junction Temperature [oC]
J
Figure 9. Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
12.5
102
Operation in This Area
is Limited by R DS(on)
10.0
7.5
5.0
2.5
0.0
101
100 us
1 ms
10 ms
100 ms
DC
100
* Notes :
10-1
10-2
1. TC = 25 o
C
2. TJ = 150 o
3. Single Pulse
C
100
101
102
103
25
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
D =0.5
100
10-1
10-2
0.2
0.1
*
N otes
1. Z θ JC (t)
2. D uty F actor, D = t1/t2
:
=
3.5 oC /W M ax.
0.05
3. T JM
-
T C
=
P D M * Z θ JC (t)
0.02
0.01
PDM
t1
single pulse
t2
10-5
10-4
10-3
10-2
10-1
100
101
t1, S q uare W ave P ulse D uration [sec]
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FCPF11N60F Rev. C1
4
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
Charge
Figure 12. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FCPF11N60F Rev. C1
5
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FCPF11N60F Rev. C1
6
Mechanical Dimensions
Figure 16. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FCPF11N60F Rev. C1
7
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intended to be an exhaustive list of all such trademarks.
AccuPower™
F-PFS™
Sync-Lock™
®*
AX-CAP®*
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®
tm
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Global Power ResourceSM
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Green FPS™
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IntelliMAX™
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
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CTL™
Current Transfer Logic™
DEUXPEED®
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ESBC™
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Programmable Active Droop™
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QFET®
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™
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Saving our world, 1mW/W/kW at a time™
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TRUECURRENT®*
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®
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FAST®
OptoHiT™
OPTOLOGIC®
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*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
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First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FCPF11N60F Rev. C1
8
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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