FCPF11N60T [ONSEMI]
功率 MOSFET，N 沟道，SUPERFET®, Easy Drive，600 V，11 A，380 mΩ，TO-220F;
| 型号： | FCPF11N60T |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPERFET®, Easy Drive，600 V，11 A，380 mΩ，TO-220F 局域网 开关 脉冲 晶体管 |
| 文件： | 总11页 (文件大小：868K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
March 2014
FCP11N60/FCPF11N60
General Description
Features
SuperFET® MOSFET is Fairchild Semiconductor’s first
genera-tion of high voltage super-junction (SJ) MOSFET
family that is utilizing charge balance technology for
outstanding low on-resistance and lower gate charge
performance. This technology is tailored to minimize
conduction loss, provide superior switch-ing performance,
dv/dt rate and higher avalanche energy. Con-sequently,
SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power,
FPD TV power, ATX power and industrial power
applications.
•
•
•
•
•
650V @T = 150°C
Typ. Rds(on)=0.32Ω
Ultra low gate charge (typ. Qg=40nC)
Low effective output capacitance (typ. Coss.eff=95pF)
100% avalanche tested
j
•
RoHS Compliant
D
G
G
G
D
S
D
TO-220F
TO-220
S
S
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Parameter
FCP11N60
FCPF11N60
Units
A
I
- Continuous (T = 25°C)
Drain Current
11
7
11*
7*
D
C
- Continuous (T = 100°C)
A
C
I
(Note 1)
Drain Current
- Pulsed
33
33*
A
DM
V
E
I
Gate-Source Voltage
± 30
V
GSS
AS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
340
11
mJ
A
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
12.5
4.5
mJ
V/ns
W
AR
dv/dt
P
Power Dissipation (T = 25°C)
125
1.0
36
D
C
- Derate above 25°C
Operating and Storage Temperature Range
0.29
W/°C
°C
T , T
-55 to +150
J
STG
Maximum lead temperature for soldering purposes,
T
300
°C
L
1/8" from case for 5 seconds
* Drain current limited by maximum junction termperature
Thermal Characteristics
Symbol
Parameter
FCP11N60
1.0
FCPF11N60
Units
°C/W
°C/W
°C/W
R
R
R
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
3.5
--
θJC
0.5
θCS
θJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
©2008 Fairchild Semiconductor Corporation
FCP11N60/FCPF11N60 Rev. C0
1
www.fairchildsemi.com
Package Marking and Ordering Information
Part Number
FCP11N60
Top Mark
FCP11N60
FCPF11N60
FCPF11N60T
Package
TO-220
Packing Method
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
50 units
50 units
Tube
Tube
Tube
FCPF11N60
FCPF11N60T
TO-220F
TO-220F
N/A
N/A
N/A
N/A
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
V
V
= 0 V, I = 250 µA, T = 25°C
D J
600
--
--
--
--
V
V
GS
GS
BV
Drain-Source Breakdown Voltage
DSS
= 0 V, I = 250 µA, T = 150°C
650
D
J
∆BV
Breakdown Voltage Temperature Coef-
ficient
DSS
I
= 250 µA, Referenced to 25°C
--
--
0.6
--
--
V/°C
V
D
/
∆T
J
Drain-Source Avalanche Breakdown
Voltage
BV
I
V
= 0 V, I = 11 A
700
DS
GS
D
V
V
V
V
= 600 V, V = 0 V
--
--
--
--
--
--
--
--
1
µA
µA
nA
nA
DSS
DS
DS
GS
GS
GS
Zero Gate Voltage Drain Current
= 480 V, T = 125°C
10
C
I
I
= 30 V, V = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
100
-100
GSSF
DS
= -30 V, V = 0 V
GSSR
DS
On Characteristics
V
V
V
V
= V , I = 250 µA
Gate Threshold Voltage
3.0
--
--
5.0
0.38
--
V
Ω
S
GS(th)
DS
GS
DS
GS
D
R
Static Drain-Source
On-Resistance
DS(on)
= 10 V, I = 5.5 A
0.32
9.7
D
g
= 40 V, I = 5.5 A
(Note 4)
Forward Transconductance
--
FS
D
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
1148 1490
pF
pF
pF
iss
V
= 25 V, V = 0 V,
GS
DS
Output Capacitance
671
63
870
82
oss
rss
f = 1.0 MHz
Reverse Transfer Capacitance
V
= 480 V, V = 0 V,
DS
GS
C
C
Output Capacitance
--
--
35
95
--
--
pF
pF
oss
oss
f = 1.0 MHz
eff.
V
= 0V to 480 V, V = 0 V
GS
Effective Output Capacitance
DS
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
34
98
80
205
250
120
52
ns
ns
d(on)
V
= 300 V, I = 11 A,
DD
D
r
R
= 25 Ω
G
119
56
ns
d(off)
f
(Note 4, 5)
(Note 4, 5)
ns
Q
Q
Q
40
nC
nC
nC
g
V
V
= 480 V, I = 11 A,
DS
GS
D
7.2
21
--
= 10 V
gs
gd
--
Drain-Source Diode Characteristics and Maximum Ratings
I
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
11
33
1.4
--
A
A
S
I
Maximum Pulsed Drain-Source Diode Forward Current
SM
V
t
V
V
= 0 V, I = 11 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
SD
GS
GS
S
= 0 V, I = 11 A,
390
5.7
ns
µC
rr
S
dI / dt = 100 A/µs
(Note 4)
Q
Reverse Recovery Charge
--
F
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. I = 5.5A, V = 50V, R = 25 Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 11A, di/dt ≤ 200A/µs, V ≤ BV
Starting T = 25°C
SD
DD
DSS,
J
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2008 Fairchild Semiconductor Corporation
FCP11N60/FCPF11N60 Rev. C0
2
www.fairchildsemi.com
Typical Characteristics
102
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
101
101
100
Bottom : 5.5 V
150oC
25oC
-55oC
100
* Notes :
* Note
1. VDS = 40V
2. 250 µs Pulse Test
1. 250 µs Pulse Test
2. TC = 25oC
-1
10
-1
10
-1
10
100
101
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.0
0.8
0.6
0.4
0.2
0.0
101
VGS = 10V
VGS = 20V
100
150 oC
25 oC
* Notes :
1. VGS = 0V
2. 250 µs Pulse Test
* Note : TJ = 25oC
-1
10
0
5
10
15
20
25
30
35
40
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
8
6000
C
iss = Cgs + Cgd (Cds = shorted)
oss = Cds + Cgd
Crss = Cgd
VDS = 100V
VDS = 250V
C
5000
4000
3000
2000
1000
0
VDS = 400V
Coss
6
* Notes :
1. VGS = 0 V
2. f = 1 MHz
C
4
iss
Crss
2
* Note : ID = 11A
0
10-1
100
101
0
5
10
15
20
25
30
35
40
45
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2008 Fairchild Semiconductor Corporation
FCP11N60/FCPF11N60 Rev. C0
3
www.fairchildsemi.com
Typical Characteristics (Continued)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
* Notes :
1. VGS = 0 V
2. ID = 250 µA
0.9
* Notes :
1. VGS = 10 V
2. ID = 5.5 A
0.8
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
102
101
100
102
Operation in This Area
is Limited by R DS(on)
Operation in This Area
is Limited by R DS(on)
100 us
100 us
1 ms
101
100
1 ms
10 ms
10 ms
DC
100 ms
DC
* Notes :
* Notes :
-1
10
1. TC = 25 o
C
-1
10
1. TC = 25 o
C
2. TJ = 150 o
C
2. TJ = 150 o
3. Single Pulse
C
3. Single Pulse
-2
-2
10
10
100
101
102
103
100
101
102
103
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for FCP11N60
Figure 9-2. Maximum Safe Operating Area
for FCPF11N60
12.5
10.0
7.5
5.0
2.5
0.0
25
50
75
100
125
150
TC, Case Temperature [oC]
Figure 10. Maximum Drain Current
vs. Case Temperature
©2008 Fairchild Semiconductor Corporation
FCP11N60/FCPF11N60 Rev. C0
4
www.fairchildsemi.com
Typical Characteristics (Continued)
100
D =0.5
0.2
*
N otes
1. JC (t)
2. D uty F actor, D =t1/t2
:
Z
=
1.0 oC /W M ax.
0.1
10-1
θ
0.05
3. TJM
-
TC
=
P D M * Z JC(t)
θ
0.02
0.01
PDM
t1
t2
single pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t1 , S quare W ave P ulse D uration [sec]
Figure 11-1. Transient Thermal Response Curve for FCP11N60
D=0.5
100
0.2
0.1
*
N otes
1. JC(t)
2. D uty Factor, D =t1/t2
:
Z
=
3.5 oC /W M ax.
θ
0.05
3. TJM
-
TC
=
PD M * Z JC(t)
θ
10-1
0.02
0.01
PDM
t1
t2
single pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square W ave Pulse Duration [sec]
Figure 11-2. Transient Thermal Response Curve for FCPF11N60
©2008 Fairchild Semiconductor Corporation
FCP11N60/FCPF11N60 Rev. C0
5
www.fairchildsemi.com
Figure 12. Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
Qg
12V
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Figure 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
10V
td(on)
tr
td(off)
tf
t on
t off
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
VDD
VDS (t)
DUT
10V
t p
t p
Time
©2008 Fairchild Semiconductor Corporation
FCP11N60/FCPF11N60 Rev. C0
6
www.fairchildsemi.com
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
©2008 Fairchild Semiconductor Corporation
FCP11N60/FCPF11N60 Rev. C0
7
www.fairchildsemi.com
SUPPLIER "B" PACKAGE
SHAPE
ꢀꢁꢂꢂ
3.50
10.67
9.65
SUPPLIER "A" PACKAGE
SHAPE
E
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
E
16.51
15.42
9.40
8.13
E
1
2
3
4.10
2.70
[2.46]
C
14.04
12.70
2.13
2.06
FRONT VIEWS
H
4.70
4.00
1.62
1.42
1.62
1.10
2.67
2.40
"A1"
8.65
7.59
1.00
0.55
SEE NOTE "F"
ꢃ
ꢄ
ꢃ
ꢄ
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
3
2
1
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H
PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
0.60
0.36
2.85
2.10
BACK VIEW
SIDE VIEW
10.36
9.96
2.66
2.42
B
A
B
3.28
3.08
7.00
3.40
3.20
0.70
SEE NOTE "F"
SEE NOTE "F"
6.88
6.48
1 X 45°
16.07
15.67
B
16.00
15.60
B
(3.23)
3
1
1.47
1.24
2.96
2.56
2.14
0.90
0.70
0.50
10.05
9.45
M
A
30°
0.45
0.25
0.60
0.45
B
2.54
2.54
4.90
4.50
B
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B
DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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