FCPF16N60 [ONSEMI]
Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 16 A, 260 mΩ, TO-220F;
| 型号： | FCPF16N60 |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 16 A, 260 mΩ, TO-220F 局域网 开关 脉冲 晶体管 |
| 文件： | 总11页 (文件大小：672K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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August 2014
FCP16N60 / FCPF16N60
®
N-Channel SuperFET MOSFET
600 V, 16 A, 260 mΩ
Features
Description
SuperFET® MOSFET is Fairchild Semiconductor’s first genera-
tion of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-
resistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switch-
ing performance, dv/dt rate and higher avalanche energy. Con-
sequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications.
•
•
•
•
•
650V @ TJ = 150°C
Typ. RDS(on) = 220 mΩ
Ultra Low Gate Charge (Typ. Qg = 55 nC )
Low Effective Output Capacitance (Typ. Coss(eff.) = 110 pF )
100% Avalanche Tested
Applications
•
•
Solar Inverter
AC-DC Power Supply
D
G
G
D
S
G
D
TO-220F
TO-220
S
S
Absolute Maximum Ratings
Symbol
Parameter
FCP16N60 FCPF16N60
Unit
VDSS
Drain-Source Voltage
Drain Current
600
V
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
16
10.1
16*
10.1*
A
A
(Note 1)
IDM
Drain Current
- Pulsed
A
48
48*
VGSS
EAS
IAR
Gate-Source Voltage
30
450
16
V
mJ
A
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
20.8
4.5
mJ
V/ns
Power Dissipation
(TC = 25°C)
- Derate Above 25°C
167
1.33
37.9
0.3
W
W/°C
T
J, TSTG
Operating and Storage Temperature Range
-55 to +150
300
°C
TL
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
°C
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
FCP16N60 FCPF16N60
Unit
°C/W
°C/W
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
0.75
62.5
3.3
62.5
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FCP16N60 / FCPF16N60 Rev. C0
1
Package Marking and Ordering Information
Part Number
FCP16N60
Top Mark
FCP16N60
FCPF16N60
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
50 units
FCPF16N60
TO-220F
Tube
N/A
N/A
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
I
D = 250 μA, VGS = 0 V, TJ = 25oC
ID = 250 μA, VGS = 0 V, TJ = 150oC
600
-
-
-
-
V
V
BVDSS
Drain to Source Breakdown Voltage
650
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 250 μA, Referenced to 25oC
-
-
0.6
-
-
V/oC
Drain-Source Avalanche Breakdown
Voltage
BVDS
V
GS = 0 V, ID = 16 A
700
V
V
DS = 600 V, VGS = 0 V
-
-
-
-
-
-
1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μA
VDS = 480 V, TC = 125oC
10
VGS = ±30 V, VDS = 0 V
±100
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 8 A
VDS = 40 V, ID = 8 A
3.0
-
5.0
0.26
-
V
Ω
S
Static Drain to Source On Resistance
Forward Transconductance
-
-
0.55
11.5
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
-
1730
960
85
2250
pF
pF
pF
pF
pF
nC
nC
nC
Ω
VDS = 25 V, VGS = 0 V,
f = 1 MHz
Coss
Crss
Coss
Coss(eff.)
Qg
Output Capacitance
1150
Reverse Transfer Capacitance
Output Capacitance
-
60
-
VDS = 480 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 400 V, VGS = 0 V
45
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
110
55
70
13
-
V
V
DS = 480 V, ID = 16 A,
GS = 10 V
Qgs
10.5
28
(Note 4)
Qgd
ESR
f = 1 MHz
1.7
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
42
130
165
90
85
ns
ns
ns
ns
270
340
190
VDD = 300 V, ID = 16 A,
V
GS = 10 V, RG = 25 Ω
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
16
48
1.4
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, ISD = 16 A
-
V
435
7.0
ns
μC
V
GS = 0 V, ISD = 16 A,
dIF/dt = 100 A/μs
Qrr
Reverse Recovery Charge
-
Notes:
1: Repetitive rating: pulse-width limited by maximum junction temperature.
2:
3:
I
I
= 8 A, V = 50 V, R = 25 Ω, starting T = 25°C.
AS
SD
DD
G
J
≤ 16 A, di/dt ≤ 200 A/μs, V ≤ BV
, starting T = 25°C.
DD
DSS J
4: Essentially independent of operating temperature typical characteristics.
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FCP16N60 / FCPF16N60 Rev. C0
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
102
101
100
102
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
101
150°C
Bottom : 5.5 V
25°C
-55°C
100
♦Note
♦ Notes :
1. VDS = 40V
1. 250μS Pulse Test
2. TC = 25°C
2. 250μs Pulse Test
10-1
100
101
2
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
102
101
100
0.6
0.5
VGS = 10V
0.4
0.3
0.2
0.1
0.0
VGS = 20V
150°C
25°C
♦ Notes :
1. VGS = 0V
2. 250 μs Pulse Test
♦ Note : TJ = 25 °Cٛ
0
5
10
15
20
25
30
35
40
45
50
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
7000
12
10
8
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
VDS = 100V
VDS = 250V
6000
Crss = Cgd
5000
VDS = 480V
Coss
4000
6
♦ Notes :
3000
1. VGS = 0 V
Ciss
2. f = 1 MHz
4
2000
Crss
2
1000
♦ Note : ID = 16A
0
0
10-1
100
101
0
10
20
30
40
50
60
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FCP16N60 / FCPF16N60 Rev. C0
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
1.2
1.1
1.0
0.9
0.8
2.5
2.0
1.5
1.0
0.5
0.0
♦ Notes :
1. VGS = 0 V
♦ Notes :
1. VGS = 10 V
2. ID = 250 μA
2. ID = 8 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9-1. Maximum Safe Operating Area
for FCP16N60
Figure 9-2. Maximum Safe Operating Area
for FCPF16N60
Operation in This Area
is Limited by R DS(on)
Operation in This Area
is Limited by R DS(on)
102
102
101
100
10-1
10-2
10 us
100 us
10 us
101
100
10-1
10-2
1 ms
100 us
1 ms
DC
10 ms
100 ms
DC
?
Notes :
?
Notes :
1. TC = 25 o
C
1. TC = 25 o
C
2. TJ = 150 o
C
2. TJ = 150 o
C
3. Single Pulse
3. Single Pulse
100
101
102
103
100
101
102
103
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current vs. Case Temperature
20
15
10
5
0
25
50
75
100
125
150
TC, Case Temperature [°C]
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FCP16N60 / FCPF16N60 Rev. C0
4
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FCP16N60
100
D =0.5
?
N otes
1. Z? JC(t)
:
0.2
= 0.75 ? /W M ax.
2. D uty Factor, D =t1/t2
10-1
0.1
3. TJM - TC
=
PDM * Z? JC(t)
0.05
0.02
0.01
PDM
t1
10-2
single pulse
10-3
t2
10-5
10-4
10-2
10-1
100
101
t1, Rectangular Pulse Duration [sec]
Figure 11-2. Transient Thermal Response Curve for FCPF16N60
101
D =0.5
100
0.2
?
N otes
1. Z?JC(t)
2. D uty Factor, D =t1/t2
:
=
3.3 ? /W M ax.
0.1
10-1
3. TJM
-
TC = PD M * Z?JC(t)
0.05
0.02
0.01
PDM
t1
single pulse
10-3
10-2
10-5
t2
10-4
10-2
10-1
100
101
t , Rectangular Pulse Duration [sec]
1
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FCP16N60 / FCPF16N60 Rev. C0
5
IG = const.
Figure 12. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FCP16N60 / FCPF16N60 Rev. C0
6
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FCP16N60 / FCPF16N60 Rev. C0
7
SUPPLIER "B" PACKAGE
SHAPE
ꢀꢁꢂꢂ
3.50
10.67
9.65
SUPPLIER "A" PACKAGE
SHAPE
E
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
E
16.51
15.42
9.40
8.13
E
1
2
3
4.10
2.70
[2.46]
C
14.04
12.70
2.13
2.06
FRONT VIEWS
H
4.70
4.00
1.62
1.42
1.62
1.10
2.67
2.40
"A1"
8.65
7.59
1.00
0.55
SEE NOTE "F"
ꢃ
ꢄ
ꢃ
ꢄ
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
3
2
1
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H
PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
0.60
0.36
2.85
2.10
BACK VIEW
SIDE VIEW
10.36
9.96
2.66
2.42
B
A
B
3.28
3.08
7.00
3.40
3.20
0.70
SEE NOTE "F"
SEE NOTE "F"
6.88
6.48
1 X 45°
16.07
15.67
B
16.00
15.60
B
(3.23)
3
1
1.47
1.24
2.96
2.56
2.14
0.90
0.70
0.50
10.05
9.45
M
A
30°
0.45
0.25
0.60
0.45
B
2.54
2.54
4.90
4.50
B
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B
DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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