FCPF190N60-F154 [ONSEMI]
Power MOSFET, N-Channel, SUPERFET® II, FAST, 600V, 20.2A, 199mΩ, TO-220F Ultra narrow lead;
| 型号： | FCPF190N60-F154 |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, N-Channel, SUPERFET® II, FAST, 600V, 20.2A, 199mΩ, TO-220F Ultra narrow lead |
| 文件： | 总9页 (文件大小：155K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – N-Channel,
SUPERFET) II
600 V, 20.2 A, 199 mW
V
R
MAX
I MAX
D
DSS
DS(ON)
600 V
199 mW @ 10 V
20.2 A
D
FCPF190N60-F154
Description
SUPERFET II MOSFET is onsemi’s brand−new high voltage
super−junction (SJ) MOSFET family that is utilizing charge balance
technology for outstanding low on−resistance and lower gate charge
performance. This technology is tailored to minimize conduction loss,
provide superior switching performance, and withstand extreme dv/dt
rate and higher avalanche energy. Consequently, SUPERFET II FAST
MOSFET series helps minimize various power systems and improve
system efficiency.
G
S
MOSFET
Features
• 650 V @ T = 150°C
J
• Typ. R
= 170 mW
DS(on)
G
D
S
• Ultra Low Gate Charge (Typ. Q = 57 nC)
g
• Low Effective Output Capacitance (Typ. C .eff = 160 pF)
TO−220F Ultra Narrow Lead
CASE 221BN
oss
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
MARKING DIAGRAM
Applications
• Computing / Display Power Supplies
• Telecom / Server Power Supplies
• Industrial Power Supplies
$Y&Z&3&K
FCPF
190N60
• Lighting / Charger / Adapter
$Y
&Z
&3
&K
= onsemi Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
FCPF190N60
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
August, 2021 − Rev. 1
FCPF190N60−F154/D
FCPF190N60−F154
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
C
Symbol
Parameter
Value
600
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
− DC
20
V
− AC (f > 1 Hz)
30
I
Drain Current
− Continuous (T = 25°C)
20.2*
12.7*
60.6*
400
A
D
C
− Continuous (T = 100°C)
C
I
Drain Current
− Pulsed (Note 1)
A
mJ
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
MOSFET dv/dt
AS
AS
I
4.0
E
AR
2.1
mJ
V/ns
dv/dt
20
100
P
Power Dissipation
(T = 25°C)
39
W
W/°C
°C
D
C
− Derate Above 25°C
0.31
−55 to +150
300
T , T
Operating and Storage Temperature Range
J
STG
T
Maximum Lead Temperature for Soldering Purpose,
1/8″ from Case for 5 Seconds
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*Drain current limited by maximum junction temperature.
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. I = 4 A, V = 50 V, R = 25 W, starting T = 25°C.
AS
DD
G
J
3. I ≤ 10 A, di/dt ≤ 200 A/ms, V ≤ BV
, starting T = 25°C.
SD
DD
DSS
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
3.2
Unit
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
_C/W
_C/W
q
JC
JA
R
62.5
q
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Shipping
50 Units / Tube
FCPF190N60−F154
FCPF190N60
TO−220F
(Pb−Free)
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2
FCPF190N60−F154
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
600
650
−
−
−
−
−
−
V
V
V
V
I
= 0 V, I = 10 mA, T = 25_C
DSS
GS
D
J
= 0 V, I = 10 mA, T = 150_C
GS
D
J
DBV
/ DT
Breakdown Voltage Temperature
Coefficient
= 10 mA, Referenced to 25_C
0.67
V/_C
DSS
J
D
BV
Drain−Source Avalanche Breakdown
Voltage
V
GS
= 0 V, I = 20 A
−
700
−
V
DS
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 480 V, V = 0 V
−
−
−
−
−
−
10
mA
DSS
GS
= 480 V, T = 125_C
10
C
I
Gate to Body Leakage Current
=
20 V, V = 0 V
100
nA
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V , I = 250 mA
2.5
−
−
3.5
0.199
−
V
W
S
GS(th)
DS(on)
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
= 10 V, I = 10 A
0.17
21
D
g
FS
= 20 V, I = 10 A
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 25 V, V = 0 V, f = 1 MHz
−
−
−
−
−
−
−
−
−
2220
1630
85
2950
2165
128
−
pF
pF
pF
pF
pF
nC
nC
nC
W
iss
DS
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
Output Capacitance
rss
C
V
DS
V
DS
V
DS
= 380 V, V = 0 V, f = 1 MHz
42
oss
GS
C
Effective Output Capacitance
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
= 0 V to 480 V, V = 0 V
160
57
−
oss (eff.)
GS
Q
= 380 V, I = 10 A, V = 10 V
74
−
g(tot)
D
GS
(Note 4)
Q
9
gs
gd
Q
21
−
ESR
f = 1 MHz
1
−
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
= 380 V, I = 10 A, V = 10 V,
−
−
−
−
20
10
64
5
50
30
ns
ns
ns
ns
d(on)
DD
D
GS
R = 4.7 W
(Note 4)
g
t
r
t
138
20
d(off)
t
f
SOURCE−DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
−
−
−
−
−
−
−
20.2
60.6
1.2
−
A
A
S
I
SM
V
SD
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
V
= 0 V, I = 10 A
−
V
GS
SD
t
rr
= 400 V, I = 10 A,
280
3.8
ns
mC
DD
SD
dI /dt = 100 A/ms
F
Q
Reverse Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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3
FCPF190N60−F154
TYPICAL PERFORMANCE CHARACTERISTICS
50
10
100
V
GS
=15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
= 20 V
DS
250 ms Pulse Test
150°C
10
25°C
1
−55°C
250 ms Pulse Test
= 25°C
T
C
1
0.3
0.1
1
10
2
3
4
5
6
7
8
V
DS
, Drain−Source Voltage (V)
V
GS
, Gate−Source Voltage (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
100
10
1
0.5
0.4
0.3
0.2
0.1
V
= 0 V
T
C
= 25°C
GS
250 ms Pulse Test
150°C
25°C
V
GS
= 10 V
V
= 20 V
40
GS
0
10
20
30
50
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I , Drain Current (A)
D
V
SD
, Body Diode Forward Voltage (V)
Figure 3. On−Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
10
10000
C
iss
V
DS
V
DS
V
DS
= 120 V
= 300 V
= 480 V
8
6
4
2
0
1000
100
10
C
oss
C
rss
V
= 0 V
GS
f = 1 MHz
C
C
C
= C + C (C = shorted)
gs gd ds
= C + C
ds
= C
gd
iss
oss
rss
gd
1
0.5
0.1
I
D
= 10 A
48
1
10
100
600
0
12
24
36
60
Q , Total Gate Charge (nC)
g
V
DS
, Drain−Source Voltage (V)
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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4
FCPF190N60−F154
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
1.2
1.1
1.0
0.9
0.8
3.0
V
= 0 V
= 10 mA
V
= 10 V
GS
GS
I
D
I = 10 A
D
2.5
2.0
1.5
1.0
0.5
0.0
−80
−40
40
80
120
160
0
−80
−40
40
80
120
160
0
T , Junction Temperature (°C)
J
T , Junction Temperature (°C)
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On−Resistance Variation
vs. Temperature
100
25
20
15
10
5
10 ms
10
1
100 ms
1 ms
Operation in this Area
is Limited by R
10 ms
DS(on)
0.1
DC
T
C
= 25°C
T = 150°C
J
Single Pulse
0
25
0.01
150
0.1
1
10
100
1000
50
75
100
125
V
DS
, Drain−Source Voltage (V)
T , Case Temperature (°C)
C
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
10
8
6
4
2
0
0
100
200
300
400
500
600
V
DS
, Drain to Source Voltage (V)
Figure 11. EOSS vs. Drain−to−Source Voltage
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5
FCPF190N60−F154
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
5
1
0.5
0.2
0.1
0.05
0.02
PDM
t1
0.1
t2
0.01
Z
(t) = 3.2°C/W Max.
q
JC
Duty Factor, D = t / t
1
2
T
JM
− T = P
x Z (t)
Single Pulse
10−4
q
C
DM
JC
0.01
10−5
10−3
10−2
10−1
1
10
100
t, Rectangular Pulse Duration (s)
Figure 12. Transient Thermal Response Curve
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6
FCPF190N60−F154
V
GS
R
Q
g
L
10 V
V
DS
Q
Q
gd
gs
V
GS
DUT
1 mA
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
10 V
t
t
d(off)
t
r
t
f
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I
D
(t)
DUT
V
DD
10 V
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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7
FCPF190N60−F154
+
DUT
V
DS
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by R
G
• I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
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8
FCPF190N60−F154
PACKAGE DIMENSIONS
TO−220 FULLPACK, 3−LEAD
CASE 221BN
ISSUE O
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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◊
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