FCPF4300N80Z [ONSEMI]
N 沟道 SuperFET® II MOSFET 800 V, 1.6 A, 4.3 Ω;
| 型号： | FCPF4300N80Z |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 SuperFET® II MOSFET 800 V, 1.6 A, 4.3 Ω |
| 文件： | 总10页 (文件大小：687K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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August 2015
FCPF4300N80Z
N-Channel SuperFET II MOSFET
®
800 V, 2.2 A, 4.3 Ω
Features
Description
•
•
•
•
•
•
•
RDS(on) = 3.4 Ω (Typ.)
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy. Conse-
quently, SuperFET II MOSFET is very suitable for the switching
power applications such as Audio, Laptop adapter, Lighting,
ATX power and industrial power applications.
Ultra Low Gate Charge (Typ. Qg = 6.8 nC)
Low Eoss (Typ. 0.8 uJ @ 400V)
Low Effective Output Capacitance (Typ. Coss(eff.) = 36 pF)
100% Avalanche Tested
RoHS Compliant
ESD Improved Capability
Applications
•
•
AC - DC Power Supply
LED Lighting
D
G
G
D
S
TO-220F
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
Parameter
FCPF4300N80Z
Unit
Drain to Source Voltage
Gate to Source Voltage
800
±20
V
- DC
VGSS
ID
V
A
- AC
(f > 1 Hz)
±30
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
2.2*
Drain Current
1.4*
IDM
EAS
IAR
Drain Current
(Note 1)
(Note 2)
(Note 1)
(Note 1)
3.2*
A
mJ
A
Single Pulsed Avalanche Energy
Avalanche Current
8.2
0.32
0.19
100
EAR
Repetitive Avalanche Energy
MOSFET dv/dt
mJ
dv/dt
PD
V/ns
Peak Diode Recovery dv/dt
(Note 3)
20
(TC = 25oC)
- Derate Above 25oC
19.2
0.15
-55 to +150
300
W
W/oC
oC
Power Dissipation
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
oC
*Drain current limited by maximum junction temperature, with heatsink.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Unit
FCPF4300N80Z
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
6.5
oC/W
62.5
www.fairchildsemi.com
©2014 Fairchild Semiconductor Corporation
FCPF4300N80Z Rev. 1.1
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FCPF4300N80Z
FCPF4300N80Z
TO-220F
Tube
N/A
N/A
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
VGS = 0 V, ID = 1 mA, TJ = 25°C
D = 1 mA, Referenced to 25oC
DS = 800 V, VGS = 0 V
800
-
-
-
-
V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
I
0.85
V/oC
V
-
-
-
-
-
-
25
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μA
μA
VDS = 640 V, VGS = 0 V, TC = 125oC
250
±10
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 0.16 mA
VGS = 10 V, ID = 0.8 A
VDS = 20 V, ID = 0.8 A
2.5
-
4.5
4.3
-
V
Ω
S
Static Drain to Source On Resistance
Forward Transconductance
-
-
3.4
0.52
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
-
267
12
355
pF
pF
pF
pF
pF
nC
nC
nC
Ω
VDS = 100 V, VGS = 0 V,
f = 1 MHz
Coss
Crss
Output Capacitance
16
Reverse Transfer Capacitance
Output Capacitance
0.78
6.2
36
-
Coss
Coss(eff.)
Qg(tot)
Qgs
VDS = 480 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
-
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
-
6.8
1.38
3.0
2.9
8.8
V
V
DS = 640 V, ID = 1.6 A,
GS = 10 V
-
-
-
(Note 4)
Qgd
ESR
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
10
6.5
21
16
30
23
52
42
ns
ns
ns
ns
VDD = 400 V, ID = 1.6 A,
VGS = 10 V, Rg = 4.7 Ω
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 1.6 A
-
-
-
-
-
-
-
2.2
3.2
1.2
-
A
A
ISM
VSD
trr
-
V
Reverse Recovery Time
209
1.2
ns
μC
V
GS = 0 V, ISD = 1.6 A,
dIF/dt = 100 A/μs
Qrr
Reverse Recovery Charge
-
Notes:
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. I = 0.32 A, R = 25 Ω, starting T = 25°C
AS
G
J
3. I ≤ 2.2 A, di/dt ≤ 200 A/μs, V ≤ BV
, starting T = 25°C
J
SD
DD
DSS
4. Essentially independent of operating temperature typical characteristic.
www.fairchildsemi.com
©2014 Fairchild Semiconductor Corporation
FCPF4300N80Z Rev. 1.1
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
4
10
VGS = 10.0V
*Notes:
1. VDS = 20V
8.0V
7.0V
6.5V
6.0V
2. 250μs Pulse Test
5.5V
5.0V
1
1
150oC
25oC
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
-55oC
0.1
0.3
0.1
1
10
20
2
3
4
5
6
7
VDS, Drain-Source Voltage[V]
VGS, Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
20
8
*Note: TC = 25oC
*Notes:
1. VGS = 0V
10
7
6
2. 250μs Pulse Test
1
150oC
5
0.1
VGS = 10V
25oC
4
0.01
VGS = 20V
3
0.001
2
0.0
0.3
0.6
0.9
1.2
1.5
0
1
2
3
4
VSD, Body Diode Forward Voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
10000
*Note: ID = 1.6A
VDS = 160V
8
1000
100
10
VDS = 400V
Ciss
VDS = 640V
6
Coss
4
2
0
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
1
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds gd
oss
rss
= C
gd
0.1
0.1
0
2
4
6
8
1
10
100
1000
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
www.fairchildsemi.com
©2014 Fairchild Semiconductor Corporation
FCPF4300N80Z Rev. 1.1
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2.8
1.2
*Notes:
1. VGS = 10V
*Notes:
1. VGS = 0V
2.4
2.0
1.6
1.2
0.8
0.4
2. ID = 0.8A
2. ID = 1mA
1.1
1.0
0.9
0.8
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
2.5
2.0
1.5
1.0
0.5
0.0
10
10μs
100μs
1
1ms
Operation in This Area
is Limited by R DS(on)
10ms
DC
0.1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.01
1
10
100
1000
25
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 11. Eoss vs. Drain to Source Voltage
2.4
1.8
1.2
0.6
0
0
160
320
480
640
800
VDS, Drain to Source Voltage [V]
www.fairchildsemi.com
©2014 Fairchild Semiconductor Corporation
FCPF4300N80Z Rev. 1.1
4
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
10
0.5
0.2
0.1
1
PDM
0.05
t1
0.02
0.01
t2
0.1
0.01
*Notes:
1. ZθJC(t) = 6.5oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
10-5
10-4
10-3
t1, Rectangular Pulse Duration [sec]
10-2
10-1
1
10
100
www.fairchildsemi.com
©2014 Fairchild Semiconductor Corporation
FCPF4300N80Z Rev. 1.1
5
I
= const.
G
Figure 13. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 14. Resistive Switching Test Circuit & Waveforms
VGS
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
©2014 Fairchild Semiconductor Corporation
FCPF4300N80Z Rev. 1.1
6
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.fairchildsemi.com
©2014 Fairchild Semiconductor Corporation
FCPF4300N80Z Rev. 1.1
7
10.36
9.96
2.66
2.42
B
A
B
3.28
3.08
7.00
3.40
3.20
0.70
SEE NOTE "F"
SEE NOTE "F"
6.88
6.48
1 X 45°
16.07
15.67
B
16.00
15.60
B
(3.23)
3
1
1.47
1.24
2.96
2.56
2.14
0.90
0.70
0.50
10.05
9.45
M
A
30°
0.45
0.25
0.60
0.45
B
2.54
2.54
4.90
4.50
B
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B
DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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