FDA8440 [ONSEMI]

N 沟道，PowerTrench® MOSFET，逻辑电平，40 V，10 A，2.1 mΩ;


型号：	FDA8440
厂家：	ONSEMI
描述：	N 沟道，PowerTrench® MOSFET，逻辑电平，40 V，10 A，2.1 mΩ 局域网开关脉冲晶体管
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April 2014

FDA8440

N-Channel Logic Level PowerTrench MOSFET

40 V, 100 A, 2.1 mΩ

Features

Application

•

R_DS(on)= 1.46 mΩ (Typ.) @ V_GS= 10 V, I_D= 80 A

Q_G(tot)= 345 nC (Typ.) @ V_GS= 10 V

Low Miller Charge

•

Power tools

Motor drives and Uninterruptible Power Supplies

Synchronous Rectification

Low Q_rrBody Diode

Battery Protection Circuit

UIS Capability (Single Pulse and Repetitive Pulse)

160 A Guarantee for 2 sec

RoHS Compliant

TO-3PN

= 25 C unless otherwise noted.

MOSFET Maximum Ratings

Symbol

Parameter

FDA8440

Unit

V_DSS

V_GSS

Drain to Source Voltage

Gate to Source Voltage

Drain Current

±20

100

- Continuous (T_C= 155^oC)

I_D

- Continuous (T_A= 25^oC, V_GS= 10 V, R_θJA= 40^oC/W )

- Pulsed

500

E_AS

P_D

Single Pulsed Avalanche Energy

Power dissipation

Derate above 25^oC

(Note 1)

1682

306

2.04

W/^oC

^oC

T_J,T_STG

Operating and Storage Temperature

-55 to +175

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case, Max.

Thermal Resistance, Junction to Ambient, Max.

0.49

^oC/W

(Note 2)

FDA8440 Rev. C1

www.fairchildsemi.com

Package Marking and Ordering Information

Part Number

Top Mark

Package

Packing Method

Reel Size

Tape Width

Quantity

FDA8440

TO-3PN

Tube

N/A

30 units

Electrical Characteristics

T = 25°C unless otherwise noted

Symbol

Parameter

Conditions

Min. Typ. Max. Unit

Off Characteristics

BV_DSS

Drain to Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Body Leakage Current

V_GS= 0 V, I_D= 250 μA

V_DS= 32 V

V_GS= 0 V

μA

I_DSS

_C= 150^oC

250

μA

I_GSS

V_GS= ±20 V

±100

On Characteristics

V_GS(th)Gate to Source Threshold Voltage

V_DS= V_GS, I_D= 250 μA

V_GS= 4.5 V, I_D= 80 A

1.56

1.46

2.2

2.1

R_DS(on)

Static Drain-Source On-Resistance

_GS= 10 V, I_D= 80 A

V_GS= 10 V, I_D= 80 A,

_C= 175^oC

mΩ

2.82

4.1

Dynamic Characteristics

C_iss

Input Capacitance

18600 24740

_DS= 25 V, V_GS= 0 V,

C_oss

C_rss

R_G

Output Capacitance

1840

1400

1.1

2450

2100

f = 1 MHz

Reverse Transfer Capacitance

Gate Resistance

V_GS= 0.5 V, f = 1 MHz

V_GS= 0 V to 10 V

V_GS= 0 V to 2 V

Q_g(tot)

Q_g(2)

Q_gs

Total Gate Charge at 10V

Threshold Gate Charge

345

32.5

450

V_DD= 20 V

I_D= 80 A

Gate to Source Gate Charge

Gate Charge Threshold to Plateau

Gate to Drain “Miller” Charge

I_g= 1.0 mA

Q_gs2

Q_gd

16.5

Switching Characteristics

t_ON

t_d(on)

t_r

Turn-On Time

Turn-On Delay Time

Rise Time

175

360

V_DD= 20 V,I_D= 80 A

130

435

290

730

275

875

590

1470

_GS= 10 V, R_GEN= 7 Ω

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

t_OFF

Turn-Off Time

Drain-Source Diode Characteristics and Maximum Ratings

_SD= 80 A

_SD= 40 A

1.25

1.0

V_SD

Source to Drain Diode Voltage

t_rr

Reverse Recovery Time

I_SD= 75 A, dI_SD/dt = 100 A/μs

Q_RR

Reverse Recovery Charge

NOTES:

1: Starting T = 25°C, L = 1 mH, I = 58 A, V = 36 V, V = 10 V.

2: Pulse width = 100 s.

FDA8440 Rev. C1

www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

400

100

V_GS= 10.0 V

7.0 V

150^oC

-55^oC

5.0 V

3.5 V

3.0 V

2.5 V

25^oC

* Notes :

1. 250μs Pulse Test

2. T_C= 25^oC

* Notes :

1. V_DS= 20V

2. 250μs Pulse Test

0.4

0.04

0.1

V_DS,Drain-Source Voltage[V]

V_GS,Gate-Source Voltage[V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperatue

1.60

1000

V_GS= 4.5V

1.55

100

150^oC

25^oC

1.50

V_GS= 10V

Notes:

1. V_GS= 0V

* Note : T_J= 25^oC

1.45

2. 250μs Pulse Test

100

150

200

250

0.3

0.6

0.9

1.2

I_D, Drain Current [A]

V_SD, Body Diode Forward Voltage [V]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

30000

24000

18000

12000

6000

= C + C (C = shorted)

gs gd ds

iss

V_DS= 25V

V_DS= 20V

V_DS= 15V

= C + C

ds gd

= C

oss

rss

C_iss

* Note:

1. V_GS= 0V

2. f = 1MHz

C_oss

C_rss

* Note : I_D= 80A

300

10^-1

10⁰

V_DS, Drain-Source Voltage [V]

10¹

100

200

400

Q_g, Total Gate Charge [nC]

FDA8440 Rev. C1

www.fairchildsemi.com

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

1.2

1.1

1.0

2.5

2.0

1.5

1.0

0.9

0.5

* Notes :

1. V_GS= 0V

* Notes :

1. V_GS= 10V

2. I_D= 250μA

2. I_D= 80A

0.8

-100

0.0

-100

-50

100

150

200

-50

100

150

200

T_J, Junction Temperature [ C]

Figure 10. Safe Operating Area

Figure 9. Unclamped Inductive Switching

Capability

200

100

5000

1000

100μs

T_J= 25^oC

100

T_J= 150^oC

Operation in This Area

is Limited by R _DS(on)

1ms

10ms

* Notes :

1. T_C= 25^oC

2. T_J= 175^oC

100ms

3. Single Pulse

0.1

0.01

0.1

100

1000 10000

V_DS, Drain-Source Voltage [V]

t_AV, TIME IN AVALANCHE(ms)

Figure 11. Transient Thermal Response Curve

0.1

0.5

0.2

0.1

P_DM

0.05

t₁

t₂

0.02

0.01

* Notes :

1. Z_θJC(t) = 0.49^oC/W Max.

Single pulse

2. Duty Factor, D=t₁/t₂

3. T_JM- T_C= P_DM* Z_θJC(t)

0.001

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

Rectangular Pulse Duration [sec]

FDA8440 Rev. C1

www.fairchildsemi.com

Figure 12. Gate Charge Test Circuit & Waveform

Figure 13. Resistive Switching Test Circuit & Waveforms

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

www.fairchildsemi.com

FDA8440 Rev. C1

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

www.fairchildsemi.com

FDA8440 Rev. C1

Mechanical Dimensions

Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65

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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

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FDA8440 Rev. C1

www.fairchildsemi.com

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intended to be an exhaustive list of all such trademarks.

AccuPower™

AX-CAP *

BitSiC™

Build it Now™

CorePLUS™

CorePOWER™

CROSSVOLT™

CTL™

F-PFS™

FRFET

®*

Global Power Resource^SM

GreenBridge™

Green FPS™

PowerTrench

PowerXS™

Programmable Active Droop™

QFET

QS™

Quiet Series™

RapidConfigure™

™

TinyBoost

TinyBuck

TinyCalc™

Green FPS™ e-Series™

Gmax™

GTO™

TinyLogic

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

Current Transfer Logic™

IntelliMAX™

DEUXPEED

ISOPLANAR™

Marking Small Speakers Sound Louder

and Better™

MegaBuck™

MICROCOUPLER™

MicroFET™

MicroPak™

MicroPak2™

MillerDrive™

MotionMax™

Dual Cool™

TranSiC™

EcoSPARK

Saving our world, 1mW/W/kW at a time™

SignalWise™

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TriFault Detect™

TRUECURRENT *

EfficentMax™

ESBC™

μSerDes™

SMART START™

Solutions for Your Success™

SPM

Fairchild

STEALTH™

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SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SupreMOS

SyncFET™

Sync-Lock™

UHC

Fairchild Semiconductor

FACT Quiet Series™

Ultra FRFET™

UniFET™

VCX™

VisualMax™

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FAST

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Datasheet contains specifications on a product that is discontinued by Fairchild

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Rev. I68

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FDA8440 Rev. C1

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application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

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FDA8440 [ONSEMI]

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