FDB016N04AL7 [ONSEMI]
N 沟道，PowerTrench® MOSFET，40V，306A，1.6mΩ;
| 型号： | FDB016N04AL7 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，40V，306A，1.6mΩ 开关 脉冲 晶体管 |
| 文件： | 总11页 (文件大小：1062K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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June 2014
FDB016N04AL7
®
N-Channel PowerTrench MOSFET
40 V, 306 A, 1.6 mW
Description
Features
This N-Channel MOSFET is produced using Fairchild
•
•
•
•
RDS(on) = 1.16 mW (Typ.) @ VGS = 10 V, ID = 80 A
Semiconductor’s advance PowerTrench® process that has
been tailored to minimize the on-state resistance while maintain-
ing superior switching performance.
Fast Switching Speed
Low Gate Charge
High Performance Trench Technology for Extremely Low
RDS(on)
Applications
•
•
•
High Power and Current Handling Capability
RoHS Compliant
Synchronous Rectification for ATX / Server / Telecom PSU
•
•
•
Battery Protection Circuit
Motor drives and Uninterruptible Power Supplies
D(Pin4, tab)
1. Gate
4
2. Source
3. Source
4. Drain
5. Source
6. Source
7. Source
G
(Pin1)
1
2
3
5
D2-PAK
(TO-263)
6
7
S(Pin2,3,5,6,7)
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
Parameter
FDB016N04AL7
Unit
V
Drain to Source Voltage
Gate to Source Voltage
40
±20
V
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Continuous (TC = 25oC, Package Limited)
306*
ID
DrainCurrent
216*
A
160
IDM
DrainCurrent
- Pulsed
(Note 1)
(Note 2)
(Note 3)
1224
1350
6.0
A
mJ
EAS
dv/dt
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
V/ns
(TC = 25oC)
- Derate Above 25oC
283
W
PD
Power Dissipation
1.89
W/oC
oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
-55 to +175
300
oC
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 160 A.
Thermal Characteristics
Symbol
Parameter
FDB016N04AL7
Unit
RqJC
RqJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.53
62.5
oC/W
©2010 Fairchild Semiconductor Corporation
FDB016N04AL7 Rev. C1
1
www.fairchildsemi.com
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FDB016N04A
D2PAK-7L
Tape and Reel
330 mm
24 mm
800 units
FDB016N04AL7
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
ID = 250 mA, VGS = 0 V, TC = 25oC
ID = 250 mA, Referenced to 25oC
BVDSS
Drain to Source Breakdown Voltage
40
-
-
-
-
V
DBVDSS
DTJ
Breakdown Voltage Temperature
Coefficient
0.03
V/oC
VDS = 32 V, VGS = 0 V
VDS = 32 V, TC = 150oC
VGS = ±20 V, VDS = 0 V
-
-
-
-
-
-
10
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
mA
500
±100
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
1.0
-
3.0
1.6
-
V
mW
S
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 80 A
VDS = 10 V, ID = 80 A
Static Drain to Source On Resistance
Forward Transconductance
-
-
1.16
381
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
8715
2035
230
129
28
11600
pF
pF
pF
nC
nC
nC
nC
VDS = 25 V, VGS = 0 V,
f = 1 MHz
Coss
Crss
Qg(tot)
Qgs
Output Capacitance
2710
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
-
167
-
-
-
VDS = 32 V, ID = 80 A,
VGS = 10 V
Qgs2
Qgd
12
(Note 4)
17
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
-
-
-
-
-
21
14
52
38
246
76
-
ns
ns
ns
ns
W
VDD = 20 V, ID = 80 A,
RG = 4.7 W, VGS = 10 V
Turn-On Rise Time
Turn-Off Delay Time
118
33
Turn-Off Fall Time
(Note 4)
ESR
Equivalent Series Resistance (G-S)
1.25
f = 1 MHz
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
306
1224
1.3
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, ISD = 80 A
VGS = 0 V, ISD = 80 A,
dIF/dt = 100 A/ms
-
V
68
84
ns
nC
Qrr
Reverse Recovery Charge
-
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2.
3.
L = 3 mH, I = 30 A, V = 25 V, R = 25 W, starting T = 25°C.
AS
DD
G
J
I
£ 80 A, di/dt £ 200 A/ms, V £ BV
, starting T = 25°C.
SD
DD
DSS
J
4. Essentially independent of operating temperature typical characteristics.
©2010 Fairchild Semiconductor Corporation
FDB016N04AL7 Rev. C1
www.fairchildsemi.com
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1000
500
*Notes:
1. VDS = 20V
VGS = 10.0 V
8.0 V
7.0 V
2. 250ms Pulse Test
6.0 V
5.0 V
4.5 V
100
100
4.0 V
3.5 V
3.0 V
175oC
25oC
10
-55oC
*Notes:
1. 250ms Pulse Test
2. TC = 25oC
10
0.01
1
0.1
1
10
1
2
3
4
VDS,Drain-Source Voltage[V]
VGS,Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Drain Current and Gate Voltage
300
1.4
1.3
1.2
1.1
1.0
100
175oC
VGS = 10V
25oC
10
VGS = 20V
*Notes:
1. VGS = 0V
*Notes: TC = 25oC
2. 250ms Pulse Test
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
50
100 150 200 250 300 350
ID, Drain Current [A]
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
20000
10
10000
VDS = 8V
Ciss
8
6
4
2
0
VDS = 20V
VDS = 32V
Coss
1000
*Note:
1. VGS = 0V
Crss
100
2. f = 1MHz
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds
oss
rss
gd
= C
gd
*Notes: ID = 80A
90 120
10
0.1
1
10
40
0
30
60
150
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
©2010 Fairchild Semiconductor Corporation
FDB016N04AL7 Rev. C1
www.fairchildsemi.com
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation vs.
Temperature
vs. Temperature
1.2
2.00
1.75
1.50
1.25
1.1
1.0
1.00
0.9
*Notes:
*Notes:
1. VGS = 10V
1. VGS = 0V
0.75
2. ID = 1mA
2. ID = 80A
0.8
-100
0.50
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs.
Case Temperature
3000
1000
350
300
250
200
150
100
100ms
Operation in This Area
is Limited by R DS(on)
10
1ms
*Notes:
1. TC = 25oC
2. TJ = 175oC
100
50
0
Limited bypackage
10ms
1
100ms
DC
3. Single Pulse
0.1
0.1
1
10
100 200
25
50
75
100
125
150
175
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 11. Unclamped Inductive
Switching Capability
1000
If R = 0
t
= (L)(I )/(1.3*RATED BV
- V
)
AV
If R ¹
= (L/R)ln[(I *R)/(1.3*RATED BV
AS
DSS
DD
t
AV
- V ) +1]
DD
AS
DSS
STARTING TJ = 25oC
100
10
1
STARTING TJ = 150oC
0.0001
0.01
1
100
10000
t
, TIME IN AVALANCHE(ms)
©2010 Fairchild Semiconductor Corporation
FDB016N04AL7 Rev. C1
www.fairchildsemi.com
4
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
1
0.1
0.5
0.2
0.1
PDM
0.05
0.02
0.01
t1
t2
Single pulse
0.01
0.001
*Notes:
1. ZqJC(t) = 0.53oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZqJC(t)
10-5
10-4
10-3
10-2
10-1
1
10
t1, Rectangular Pulse Duration [sec]
©2010 Fairchild Semiconductor Corporation
FDB016N04AL7 Rev. C1
5
www.fairchildsemi.com
Figure 13. Gate Charge Test Circuit & Waveform
Figure 14. Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
VGS
td(on)
tr
td(off)
tf
t on
t off
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDB016N04AL7 Rev. C1
6
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDB016N04AL7 Rev. C1
7
Mechanical Dimensions
2
Figure 17. TO263 (D PAK), Molded, 7-Lead, Surface Mount
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO263-0R7
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDB016N04AL7 Rev. C1
8
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®*
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®
tm
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®
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Definition of Terms
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Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I68
9
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDB016N04AL7 Rev. C1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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