FDB031N08 [ONSEMI]
N 沟道 PowerTrench® MOSFET 75V，235A，3.1mΩ;
| 型号： | FDB031N08 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 PowerTrench® MOSFET 75V，235A，3.1mΩ PC 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：839K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
2014 年2 月
FDB031N08
N 沟道PowerTrench MOSFET
75 V，235 A，3.1 mΩ
®
特性
•
说明
此N 沟道MOSFET 采用飞兆半导体先进的PowerTrench® 工艺
生产，这一先进工艺是专为最大限度地降低导通电阻并保持卓越
开关性能而定制的。
RDS(on) = 2.4 mΩ (Typ.)@VGS = 10 V, ID = 75 A
• 快速开关速度
• 低栅极电荷
应用
• 用于ATX/ 服务器/ 电信PSU 的同步整流
• 高性能沟道技术可实现极低的RDS(on)
• 高功率和高电流处理能力
• 符合RoHS 标准
• 电池保护电路
• 电机驱动和不间断电源
D
D
G
G
S
D2-PAK
S
MOSFET 最大额定值TC = 25°C 除非另有说明。
FDB031N08
75
符号
VDSS
VGSS
参数
单位
V
漏极－源极电压
栅极－源极电压
±20
V
A
235
漏极电流
- 连续（TC=25°C，硅片受限）
- 连续（TC=100°C，硅片受限）
- 连续（TC=25°C，封装受限）
ID
165
A
120
A
IDM
940
A
漏极电流
- 脉冲
（说明1）
（说明2）
（说明3）
EAS
dv/dt
1995
5.5
mJ
V/ns
W
单脉冲雪崩能量
二极管恢复dv/dt 峰值
(TC = 25°C)
375
PD
功耗
2.5
W/°C
°C
°C
- 降低至25°C 以上
TJ, TSTG
TL
-55 至+175
300
工作和存储温度范围
用于焊接的最大引线温度，距离外壳1/8"，持续5 秒
热性能
FDB031N08
0.4
符号
RθJC
参数
结至外壳热阻最大值。
单位
°C/W
RθJA
62.5
结至环境热阻最大值。
www.fairchildsemi.com
©2008 飞兆半导体公司
1
FDB031N08 Rev. C4
封装标识与定购信息
器件编号
顶标
封装
D2-PAK
包装方法
卷带
卷尺寸
带宽
数量
FDB031N08
FDB031N08
330 mm
24 mm
800 个
电气特性TC = 25°C 除非另有说明。
符号
参数
测试条件
最小值 典型值 最大值
单位
关断特性
BVDSS
ID = 250 μA, VGS = 0 V, TC = 25°C
D = 250 μA，温度参考25°C
75
-
-
-
-
V
漏极－源极击穿电压
ΔBVDSS
/ ΔTJ
击穿电压温度系数
I
0.05
V/°C
VDS = 75 V, VGS = 0 V
VDS = 75 V, TC = 150°C
VGS = ±20 V, VDS = 0 V
-
-
-
-
-
-
1
IDSS
IGSS
μA
零栅极电压漏极电流
500
±100
nA
栅极- 体漏电流
导通特性
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 75 A
VDS = 10 V, ID = 75 A
2.5
3.5
2.4
180
4.5
3.1
-
V
mΩ
S
栅极阈值电压
-
-
漏极至源极静态导通电阻
正向跨导
动态特性
Ciss
-
-
-
-
-
-
11400
1360
595
169
60
15160
1810
800
220
-
pF
pF
pF
nC
nC
nC
输入电容
VDS = 25 V, VGS = 0 V,
f = 1 MHz
Coss
输出电容
Crss
反向传输电容
Qg(tot)
Qgs
10 V 的栅极电荷总量
栅极- 源极栅极电荷
栅极- 漏极“ 米勒” 电荷
VDS = 60 V, ID = 75 A,
V
GS = 10 V
（说明4）
Qgd
47
-
开关特性
td(on)
tr
td(off)
tf
-
-
-
-
230
191
335
121
470
392
680
252
ns
ns
ns
ns
导通延迟时间
开通上升时间
关断延迟时间
关断下降时间
VDD = 37.5 V, ID = 75 A,
G = 25 Ω, VGS = 10 V
R
（说明4）
漏极- 源极二极管特性
IS
-
-
-
-
-
-
-
235
940
1.3
-
A
A
漏极- 源极二极管最大正向连续电流
漏极- 源极二极管最大正向脉冲电流
漏极- 源极二极管正向电压
反向恢复时间
ISM
VSD
trr
VGS = 0 V, ISD = 75 A
-
V
53
77
ns
nC
VGS = 0 V, ISD = 75 A,
dIF/dt = 100 A/μs
Qrr
-
反向恢复电荷
注意：
1. 重复额定值：脉冲宽度受限于最大结温。
2. L = 0.71 mH，I = 75 A，V = 50 V，R = 25 Ω，启动T = 25°C。
AS
DD
G
J
3. I ≤ 75 A，di/dt ≤ 200 A/μs，V ≤ BV
，开始T = 25°C。
J
SD
DD
DSS
4. 本质上独立于工作温度的典型特性。
www.fairchildsemi.com
©2008 飞兆半导体公司
2
FDB031N08 Rev. C4
典型性能特征
图1. 导通区域特性
图2. 传输特性
3000
500
VGS = 15.0 V
10.0 V
8.0 V
1000
7.0 V
6.5 V
100
100
10
1
6.0 V
5.5 V
5.0 V
175oC
-55oC
25oC
10
1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
0.1
0.01
0.1
VDS,Drain-Source Voltage[V]
1
2
4
6
8
VGS,Gate-Source Voltage[V]
图3. 导通电阻变化vs. 漏极电流和栅极电压
图4. 体二极管正向电压变化vs. 源极电流和温度
0.0030
400
100
VGS = 10V
175oC
25oC
0.0025
VGS = 20V
10
*Notes:
1. VGS = 0V
*Note: TC = 25oC
300 400
2. 250μs Pulse Test
0.0020
1
0.0
0
100
200
0.5
1.0
1.5
ID, Drain Current [A]
VSD, Body Diode Forward Voltage [V]
图5. 电容特性
图6. 栅极电荷特性
100000
10
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds gd
oss
rss
VDS = 15V
= C
gd
VDS = 37.5V
VDS = 60V
8
6
4
2
0
Ciss
10000
1000
*Note:
1. VGS = 0V
2. f = 1MHz
Coss
Crss
*Note: ID = 75A
150
100
0.1
80
1
10
0
50
100
200
VDS, Drain-Source Voltage [V]
Qg, Total Gate Charge [nC]
www.fairchildsemi.com
©2008 飞兆半导体公司
3
FDB031N08 Rev. C4
典型性能特征（接上页）
图7. 击穿电压变化与温度的关系
图8. 导通电阻变化与温度的关系
3.0
1.2
2.5
2.0
1.5
1.0
1.1
1.0
0.9
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
0.5
2. ID = 10mA
2. ID = 75A
0.0
-100
0.8
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [C]
TJ, Junction Temperature [C]
图9. 最大安全工作区
图10. 最大漏极电流vs. 外壳温度
1000
250
100μs
200
100
150
1ms
Limited by package
Operation in This Area
is Limited by R DS(on)
10
1
10ms
100
50
0
100ms
DC
SINGLE PULSE
TC = 25oC
TJ = 175oC
RθJC = 0.4oC/W
0.1
0.1
1
10
100
25
50
75
100
125
150
175
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
图11. 瞬态热响应曲线
0.5
0.5
0.1
0.2
0.1
PDM
0.05
t1
t2
0.02
0.01
0.01
*Notes:
1. ZθJC(t) = 0.4oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.001
10-5
10-4
10-3
10-2
10-1
100
101
t1，矩形脉冲持续时间[ 秒]
www.fairchildsemi.com
©2008 飞兆半导体公司
4
FDB031N08 Rev. C4
I
= 常量
G
图12. 栅极电荷测试电路与波形
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
图13. 阻性开关测试电路与波形
VGS
图14. 非箝位感性开关测试电路与波形
www.fairchildsemi.com
©2008 飞兆半导体公司
5
FDB031N08 Rev. C4
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
图15. 峰值二极管恢复dv/dt 测试电路与波形
www.fairchildsemi.com
©2008 飞兆半导体公司
6
FDB031N08 Rev. C4
机械尺寸
2
图16. TO263 (D PAK)，模塑，2 引脚，表面贴装
封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 /
或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件，尤其是其中涉及飞兆公司
产品保修的部分。
随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-0R2
www.fairchildsemi.com
©2008 飞兆半导体公司
7
FDB031N08 Rev. C4
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
F-PFS™
FRFET
Sync-Lock™
®*
®
®
®
®
Global Power ResourceSM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
Gmax™
GTO™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Dual Cool™
®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
EfficentMax™
ESBC™
®
TRUECURRENT *
μSerDes™
SMART START™
®
Solutions for Your Success™
®
®
SPM
Fairchild
®
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
Fairchild Semiconductor
FACT Quiet Series™
®
®
UHC
®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
mWSaver
OptoHiT™
OPTOLOGIC
OPTOPLANAR
FACT
FAST
®
®
FastvCore™
FETBench™
FPS™
®
®
SupreMOS
SyncFET™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
www.fairchildsemi.com
©2008 飞兆半导体公司
FDB031N08 Rev. C4
8
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
相关型号：
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明