FDB082N15A [ONSEMI]
N 沟道，PowerTrench® MOSFET，150V，105A，8.2mΩ;
| 型号： | FDB082N15A |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，150V，105A，8.2mΩ 开关 脉冲 晶体管 |
| 文件： | 总11页 (文件大小：874K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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2015 年5 月
FDB082N15A
N 沟道PowerTrench MOSFET
150 V，117 A，8.2 mΩ
®
特性
•
说明
RDS(on) = 6.7 mΩ （典型值）@VGS = 10 V, ID = 75 A
此 N 沟道 MOSFET 采用飞兆半导体先进的 Power Trench® 工
艺生产，这一先进工艺是专为最大限度地降低导通电阻并保持卓
越开关性能而定制的。
• 快速开关速度
• 低栅极电荷，QG = 64.5 nC （典型值）
• 高性能沟道技术可实现极低的RDS(on)
• 高功率和高电流处理能力
• 符合RoHS 标准
应用
• 用于ATX/ 服务器/ 电信PSU 的同步整流
• 电池保护电路
• 电机驱动和不间断电源
• 微型太阳能逆变器
D
D
G
G
S
D2-PAK
S
MOSFET 最大额定值TC = 25°C 除非另有说明。
FDB082N15A
符号
VDSS
参数
单位
150
±20
V
漏极－源极电压
栅极－源极电压
- DC
VGSS
ID
V
A
- AC
(f > 1 Hz)
±30
117
- 连续（TC = 25°C，硅限制）
- 连续（TC = 100°C，硅限制）
- 脉冲
漏极电流
83
IDM
468
A
mJ
漏极电流
（说明1）
（说明2）
（说明3）
EAS
dv/dt
542
单脉冲雪崩能量
二极管恢复dv/dt 峰值
6
V/ns
W
(TC = 25°C)
294
PD
功耗
1.96
-55 至+175
300
W/°C
°C
- 降低至25°C 以上
TJ，TSTG
工作和存储温度范围
TL
°C
用于焊接的最大引线温度，距离外壳1/8"，持续5 秒
热性能
FDB082N15A
0.51
符号
RθJC
参数
结至外壳热阻最大值
单位
°C/W
RθJA
结至环境热阻最大值
62.5
www.fairchildsemi.com
©2011 飞兆半导体公司
1
FDB082N15A Rev. 1.8
封装标识与定购信息
器件编号
顶标
FDB082N15A
封装
D2-PAK
包装方法
卷带
卷尺寸
带宽
数量
FDB082N15A
330 mm
24 mm
800 个
电气特性TC = 25°C 除非另有说明。
符号
参数
测试条件
最小值 典型值 最大值
单位
关断特性
BVDSS
ID = 250 μA, VGS = 0 V, TC = 25°C
ID = 250 μA，推荐选用25°C
150
-
-
-
-
V
漏极－源极击穿电压
ΔBVDSS
/ ΔTJ
0.08
V/°C
击穿电压温度系数
VDS = 120 V, VGS = 0 V
VDS = 120 V, TC = 150°C
VGS = ±20 V, VDS = 0 V
-
-
-
-
-
-
1
IDSS
IGSS
μA
零栅极电压漏极电流
500
±100
nA
栅极- 体漏电流
导通特性
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 75 A
VDS = 10 V, ID = 75 A
2.0
-
4.0
8.20
-
V
mΩ
S
栅极阈值电压
-
-
6.7
139
漏极至源极静态导通电阻
正向跨导
动态特性
Ciss
-
-
-
-
-
-
-
-
-
-
-
4645
1445
100
4570
460
20
6040
pF
pF
pF
pF
pF
pF
nC
nC
nC
nC
Ω
输入电容
VDS = 25 V, VGS = 0 V,
f = 1 MHz
Coss
Crss
Ciss
1880
输出电容
-
反向传输电容
6040
输入电容
VDS = 75 V, VGS = 0 V,
f = 1 MHz
Coss
Crss
Qg(tot)
Qgs
1880
输出电容
-
84
-
反向传输电容
64.5
19.1
8.7
10 V 的栅极电荷总量
栅极- 源极栅极电荷
栅极平台电荷阈值
栅极- 漏极“ 米勒” 电荷
等效串联电阻(G-S)
VDS = 120 V, ID = 75 A,
V
GS = 10 V
Qgs2
Qgd
-
13.5
2.5
-
（说明4）
ESR
f = 1 MHz
-
开关特性
td(on)
tr
td(off)
tf
-
-
-
-
22
58
61
26
54
126
132
62
ns
ns
ns
ns
导通延迟时间
开通上升时间
关断延迟时间
关断下降时间
VDD = 75 V, ID = 75 A,
V
GS = 10 V, RG = 4.7 Ω
（说明4）
漏极- 源极二极管特性
IS
-
-
-
-
-
-
-
117
468
1.25
-
A
A
漏极- 源极二极管最大正向连续电流
漏极- 源极二极管最大正向脉冲电流
漏极- 源极二极管正向电压
反向恢复时间
ISM
VSD
trr
VGS = 0 V, ISD = 75 A
-
V
96
268
ns
nC
VGS = 0 V, ISD = 75 A,
dIF/dt = 100 A/μs
Qrr
-
反向恢复电荷
注意：
1. 重复额定值：脉冲宽度受限于最大结温。
2. 开始T = 25°C，L = 3 mH，I = 19 A。
J
SD
3. I ≤ 75 A，di/dt ≤ 200 A/μs，V ≤ BV
，开始T = 25°C。
J
SD
DD
DSS
4. 本质上独立于工作温度的典型特性。
www.fairchildsemi.com
©2011 飞兆半导体公司
2
FDB082N15A Rev. 1.8
典型性能特征
图1. 导通区域特性
图2. 传输特性
500
300
VGS = 10.0V
8.0V
6.5V
6.0V
5.5V
5.0V
100
175oC
100
25oC
-55oC
10
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
*Notes:
1. VDS = 10V
2. 250μs Pulse Test
10
0.1
1
1
10
2
3
4
5
6
VDS, Drain-Source Voltage[V]
VGS, Gate-Source Voltage[V]
图3. 导通电阻变化与漏极电流和栅极电压
图4. 体二极管正向电压变化与源极电
流和温度
14
500
12
10
100
175oC
25oC
VGS = 10V
8
10
VGS = 20V
6
*Notes:
1. VGS = 0V
*Note: TC = 25oC
300 400
2. 250μs Pulse Test
4
1
0.0
0
100
200
0.5
1.0
1.5
ID, Drain Current [A]
VSD, Body Diode Forward Voltage [V]
图5. 电容特性
图6. 栅极电荷
10
10000
Ciss
VDS = 30V
DS = 75V
DS = 120V
8
6
4
2
0
Coss
V
V
1000
Crss
*Note:
1. VGS = 0V
2. f = 1MHz
C
C
C
= C + C (C = shorted)
gs gd ds
iss
100
50
= C + C
ds
= C
gd
oss
rss
gd
*Note: ID = 75A
56
0
14
28
42
70
0.1
1
10
30
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
www.fairchildsemi.com
©2011 飞兆半导体公司
3
FDB082N15A Rev. 1.8
典型性能特征（接上页）
图7. 击穿电压变化与温度
图8. 导通电阻变化与温度
1.10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.05
1.00
0.95
0.90
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
2. ID = 250μA
2. ID = 75A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
图9. 最大安全工作区
图10. 最大漏极电流与外壳温度
120
1000
100
10μs
100
80
100μs
10
VGS = 10V
60
1ms
Operation in This Area
is Limited by R DS(on)
1
0.1
10ms
DC
40
20
SINGLE PULSE
TC = 25oC
TJ = 175oC
RθJC = 0.51oC/W
R
θJC= 0.51oC/W
0
25
0.01
50
75
100
125
150
175
0.1
1
10
100 300
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
图11. 非箝位电感开关能力
300
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD)
If R = 0
tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1]
100
10
1
STARTING TJ = 25oC
STARTING TJ = 150oC
0.001 0.01
0.1
1
10
100
1000
tAV, TIME IN AVALANCHE (ms)
www.fairchildsemi.com
©2011 飞兆半导体公司
4
FDB082N15A Rev. 1.8
典型性能特征
图12. 瞬态热响应曲线
1
0.1
0.5
0.2
0.1
PDM
0.05
0.02
0.01
t1
t2
0.01
1E-3
*Notes:
Single pulse
1. ZθJC(t) = 0.51oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-5
10-4
10-3
10-2
10-1
100
t
，矩形脉冲持续时间
[
秒]
1
www.fairchildsemi.com
©2011 飞兆半导体公司
5
FDB082N15A Rev. 1.8
I
= 常量
G
图13. 栅极电荷测试电路与波形
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
图14. 阻性开关测试电路与波形
VGS
图15. 非箝位电感开关测试电路与波形
www.fairchildsemi.com
©2011 飞兆半导体公司
6
FDB082N15A Rev. 1.8
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
图16. 二极管恢复dv/dt 峰值测试电路与波形
www.fairchildsemi.com
©2011 飞兆半导体公司
7
FDB082N15A Rev. 1.8
机械尺寸
2
图17. TO263 (D PAK) 模塑2 引线表面贴装
封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 /
或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不超出飞兆公司全球范围内的条款与条件，尤其指保修，保修涵盖飞
兆半导体的全部产品。
随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002
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©2011 飞兆半导体公司
8
FDB082N15A Rev. 1.8
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
®
AccuPower™
F-PFS™
FRFET
OPTOPLANAR
®*
®
AttitudeEngine™
®
®
Global Power ResourceSM
GreenBridge™
Green FPS™
tm
Awinda
®
TinyBoost
TinyBuck
®
AX-CAP *
Power Supply WebDesigner™
®
®
BitSiC™
PowerTrench
TinyCalc™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
PowerXS™
®
TinyLogic
Programmable Active Droop™
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
®
QFET
QS™
Quiet Series™
Current Transfer Logic™
Marking Small Speakers Sound Louder RapidConfigure™
TranSiC™
®
DEUXPEED
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
™
TriFault Detect™
TRUECURRENT *
Dual Cool™
®
®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
μSerDes™
EfficentMax™
ESBC™
MicroPak™
SmartMax™
MicroPak2™
MillerDrive™
MotionMax™
SMART START™
®
®
Solutions for Your Success™
UHC
®
®
SPM
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
Fairchild
®
®
MotionGrid
STEALTH™
Fairchild Semiconductor
FACT Quiet Series™
®
®
MTi
SuperFET
®
®
MTx
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
FACT
FAST
®
®
MVN
®
mWSaver
FastvCore™
FETBench™
FPS™
®
OptoHiT™
OPTOLOGIC
SupreMOS
Xsens™
仙童™
®
SyncFET™
Sync-Lock™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Not In Production
Rev. I74
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©2011 飞兆半导体公司
FDB082N15A Rev. 1.8
9
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
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