FDB1D7N10CL7 [ONSEMI]
功率 MOSFET，N 沟道，Standard Gate，100 V，268 A，1.7 mΩ;
| 型号： | FDB1D7N10CL7 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，Standard Gate，100 V，268 A，1.7 mΩ 栅 |
| 文件： | 总8页 (文件大小：356K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FDB1D7N10CL7
N-Channel Shielded Gate
POWERTRENCH) MOSFET
100 V, 268 A, 1.7 mW
Description
www.onsemi.com
This N−Channel MOSFET is produced using ON Semiconductor’s
advanced POWERTRENCH process that incorporates Shielded Gate
technology. This process has been optimized to minimize on−state
resistance and yet maintain superior switching performance with best
in class soft body diode.
V
I
D
MAX
r
MAX
DS(on)
DS
100 V
268 A
1.7 mΩ
Features
D (Pin4, tab)
• Max R
• Max R
• Max R
• Max R
= 1.75 mΩ at V = 10 V, I = 100 A
DS(on)
DS(on)
DS(on)
DS(on)
GS
D
= 1.7 mΩ at V
= 12 V, I = 100 A
GS
D
= 1.65 mΩ at V
= 4.4 mΩ at V
= 15 V, I = 100 A
GS
D
= 6 V, I = 63 A
GS
D
G (Pin1)
• 50% Lower Qrr than Other MOSFET Suppliers
• Lowers Switching Noise/EMI
• MSL1 Robust Package Design
• 100% UIL Tested
S (Pin2, 3, 5, 6, 7)
N−Channel MOSFET
Applications
• Industrial Motor Drive
• Industrial Power Supply
• Industrial Automation
• Battery Operated Tools
• Battery Protection
• Solar Inverters
1. Gate
4
2. Source
3. Source
4. Drain
5. Source
6. Source
7. Source
1
2
3
5
6
7
D2PAK7 (TO−263 7 LD)
• UPS and Energy Inverters
• Energy Storage
CASE 418AY
• Load Switch
MARKING DIAGRAM
MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)
C
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Ratings
100
Unit
V
$Y&Z&3&K
FDB
1D7N10CL7
V
DS
V
GS
20
V
I
D
268
A
Continuous (T = 25°C) (Note 5)
C
190
Continuous (T = 100°C) (Note 5)
C
$Y
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
1390
595
Pulsed (Note 4)
&Z
&3
&K
E
AS
Single Pulsed Avalanche Energy
(Note 3)
mJ
W
FDB1D7N10CL7 = Specific Device Code
P
D
Power Dissipation
250
3.8
T
C
= 25°C
T = 25°C (Note 1a)
A
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
T , T
Operating and Storage Temperature −55 to +175
Range
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
April, 2018 − Rev. 2
FDB1D7N10CL7/D
FDB1D7N10CL7
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
0.6
Unit
R
Thermal Resistance, Junction to Case (Note 1)
_C/W
q
JC
JA
R
Thermal Resistance, Junction to Ambient (Note 1a)
40
q
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
100
−
−
−
V
DSS
DBV
/DT
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25°C
−
57
mV/_C
DSS
J
I
Zero Gate Voltage Drain Current Zero
VDS = 80 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
−
−
−
−
1
mA
DSS
Gate Voltage Drain Current
I
Gate to Source Leakage Current
100
nA
GSS
ON CHARACTERISTICS
V
GS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 700 μA
2.0
3.1
4.0
V
V
GS(th)
/DT
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 700 μA, referenced to 25°C
−
−9
−
mV/_C
J
R
Static Drain to Source On Resistance
VGS = 10 V, ID = 100 A
VGS = 12 V, ID = 100 A
VGS = 15 V, ID = 100 A
VGS = 6 V, ID = 63 A
−
−
−
−
−
−
1.5
1.4
1.75
1.7
1.65
4.4
3.1
−
mW
DS(on)
1.33
2.2
VGS = 10 V, ID = 100 A, TJ= 150°C
VDS = 5 V, ID = 100 A
2.65
237
g
FS
Forward Transconductance
S
DYNAMIC CHARACTERISTICS
C
Input Capacitance
VDS = 50 V, VGS = 0 V, f = 1 MHz
−
−
8285
5025
50
11600
7035
80
pF
pF
pF
Ω
iss
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
−
rss
R
0.1
0.8
1.6
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
V
= 50 V, I = 100 A,
−
−
−
−
−
−
−
−
−
39
33
63
53
136
58
163
104
−
ns
ns
d(on)
DD
GS
D
= 10 V, R
= 6 Ω
GEN
t
r
t
Turn−Off Delay Time
Fall Time
85
ns
d(off)
t
f
36
ns
Q
Q
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Output Charge
V
V
= 0 V to 10 V
= 0 V to 6 V
116
74
nC
nC
nC
nC
nC
g
g
GS
VDD = 50 V,
ID = 100 A
GS
Q
37
gs
gd
Q
24
−
Q
VDD = 50 V, VGS = 0 V
333
−
oss
SOURCE-DRAIN DIODE CHARACTERISTICS
Continuous Drain to Source Diode Forward Current
Pulsed Drain to Source Diode Forward Current
I
−
−
−
−
−
268
1390
1.2
A
A
V
S
I
SM
V
SD
Source to Drain Diode Forward
Voltage
VGS = 0 V, IS = 100 A (Note 2)
0.9
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2
FDB1D7N10CL7
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
IF = 50 A, di/dt = 300 A/μs
IF = 50 A, di/dt = 1000 A/μs
Min
Typ
Max
Unit
SOURCE-DRAIN DIODE CHARACTERISTICS
t
rr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
−
−
−
−
63
186
82
101
298
ns
nC
ns
Q
rr
t
rr
132
Q
869
1390
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
θ
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
θ
θ
JC
CA
a) 40°C/W when mounted on a 1 in2 pad of 2 oz copper.
b) 62.5°C/W when mounted on a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. E of 595 mJ is based on starting T = 25 °C, L = 0.3 mH, I = 63 A, V = 90 V, V = 10 V. 100% test at L = 0.1 mH, I = 91 A.
AS
J
AS
DD
GS
AS
4. Pulsed Id please refer to Figure “Forward Bias Safe Operating Area” for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal &
electro−mechanical application board design.
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDB1D7N10CL7
FDB1D7N10CL7
D2−PAK−7L
330 mm
24 mm
800 Units
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3
FDB1D7N10CL7
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
320
280
240
200
160
120
80
9
8
7
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 10 V
VGS = 6.5 V
VGS = 6 V
V
GS = 5 V
6
5
4
3
2
1
0
VGS = 5.5 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 6 V
VGS = 5.5 V
40
V
GS = 5 V
VGS = 10 V
120 160 200 240 280 320
VGS = 6.5 V
0
0
1
2
3
4
5
0
40
80
V , Drain-Source Voltage (V)
DS
I , Drain Current (A)
D
Figure 1. On-Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
ID = 100 A
VGS = 10 V
8
ID = 100 A
6
4
TJ = 150 o
C
2
0
TJ = 25 o
C
3
6
9
12
15
−75 −50 −25
0
25 50 75 100 125 150 175
T , Junction Temperature (5C)
J
V , Gate to Source Voltage (V)
GS
Figure 3. Normalized On−Resistance
Figure 4. On−Resistance vs. Gate to Source Voltage
vs. Junction Temperature
320
320
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VDS = 5 V
VGS = 0 V
100
280
240
200
160
120
80
10
TJ = 175 o
C
TJ = 175 o
C
1
TJ = 25 o
C
TJ = 25 o
C
0.1
TJ = −55oC
TJ = −55 oC
0.01
40
0.001
0
2
3
4
5
6
7
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V , Gate to Source Voltage (V)
GS
V
SD
, Body Diode Forward Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
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4
FDB1D7N10CL7
TYPICAL CHARACTERISTICS (Continued)
(T = 25°C unless otherwise noted)
J
100000
10000
1000
10
8
ID = 100 A
VDD = 50 V
Ciss
Coss
VDD = 25 V
6
VDD = 75 V
100
10
1
4
Crss
2
f = 1 MHz
GS = 0 V
V
0
0.1
1
10
, Drain to Source Voltage (V)
DS
100
0
30
60
90
120
Q , Gate Characteristics
V
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain
to Source Voltage
200
100
300
250
200
150
100
50
R
qJC = 0.6 oC/W
VGS = 10 V
TJ = 25 o
C
10
VGS = 6 V
TJ = 150 o
C
1
0
0.001 0.01
0.1
1
10
100
1000
25
50
75
100
125
150
175
t , Time in Avalanche (ms)
AV
T , Case Temperature (5C)
C
Figure 9. Unclamped Inductive Switching Capability
Figure 10. Maximum Continuous Drain Current
vs. Case Temperature
20000
10000
100000
SINGLE PULSE
qJC = 0.6 oC/W
TC = 25 oC
R
1 ms
1000
100
10
5 ms
10 ms
10000
1000
100
THIS AREA IS
LIMITED BY rDS(on)
100 ms
SINGLE PULSE
1 ms
TJ = MAX RATED
10 ms
100 ms
1
R
qJC = 0.6 oC/W
CURVE BENT TO
MEASURED DATA
TC = 25 oC
0.1
10−5
10−4
10−3
t, Pulse Width (sec)
10−2
10−1
0.1
1
10
100
400
1
V , Drain to Source Voltage [V]
DS
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
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5
FDB1D7N10CL7
TYPICAL CHARACTERISTICS (Continued)
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
P
DM
0.1
0.05
0.02
0.01
0.1
t
1
t
2
Notes:
SINGLE PULSE
Z
R
(t) = r(t) × R
q
JC
0.01
q
JC
= 0.6°C/W
q
JC
Peak T = P
× Z (t) + T
JC
q
J
DM
C
Duty Cycle, D = t / t
1
2
0.001
−5
−4
−3
−2
−1
0
10
10
10
10
10
10
t, Rectangular Pulse Duration (s)
Figure 13. Normalized Max Junction to Case Transient Thermal Response Curve
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK7 (TO−263 7 LD)
CASE 418AY
ISSUE C
DATE 15 JUL 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13798G
D2PAK7 (TO−263 7 LD)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
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© Semiconductor Components Industries, LLC, 2018
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