FDB20N50F [ONSEMI]
功率 MOSFET，N 沟道，UniFETTM，FRFET®，500 V，20 A，260 mΩ，D2PAK;
| 型号： | FDB20N50F |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，UniFETTM，FRFET®，500 V，20 A，260 mΩ，D2PAK 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：677K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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December 2013
FDB20N50F
N-Channel UniFET FRFET MOSFET
500 V, 20 A, 260 mΩ
TM
®
Features
Description
•
•
•
•
•
•
•
RDS(on) = 220 mΩ (Typ.) @ VGS = 10 V, ID = 10 A
Low Gate Charge (Typ. 50 nC)
Low Crss (Typ. 27 pF)
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. The body diode’s reverse recovery perfor-
mance of UniFET FRFET® MOSFET has been enhanced by
lifetime control. Its trr is less than 100nsec and the reverse dv/dt
immunity is 15V/ns while normal planar MOSFETs have over
200nsec and 4.5V/nsec respectively. Therefore, it can remove
additional component and improve system reliability in certain
applications in which the performance of MOSFET’s body diode
is significant. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
100% Avalanche Tested
Improve dv/dt Capability
RoHS Compliant
Qualified according to JEDEC Standards JESD22-A113F and
IPC/JEDEC J-STD-020D.1
Applications
•
•
•
•
LCD/LED/PDP TV
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
D
D
G
G
D2-PAK
S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
Parameter
FDB20N50F
Unit
V
Drain to Source Voltage
Gate to Source Voltage
500
±30
V
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pu ls ed
20
ID
D r a in C u r r e n t
A
12.9
80
IDM
Dr ain Cur rent
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
A
mJ
A
EAS
IAR
Single Pulsed Avalanche Energy
Avalanche Current
1110
20
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
25
mJ
V/ns
W
W/oC
oC
10
(TC = 25oC)
- Derate Above 25oC
250
PD
Power Dissipation
2.0
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
oC
Thermal Characteristics
Symbol
Parameter
FDB20N50F
Unit
RθJC
RθCS
RθJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Case to Sink, Typ.
0.5
0.5
oC/W
Thermal Resistance, Junction to Ambient, Max.
62.5
www.fairchildsemi.com
©2012 Fairchild Semiconductor Corporation
FDB20N50F Rev. C3
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
D2-PAK
Packing Method
Reel Size
Tape Width
Quantity
FDB20N50F
FDB20N50F
Tape and Reel
330 mm
24 mm
800 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 500 uA, VGS = 0 V, TJ = 25oC
D = 250 μA, Referenced to 25oC
DS = 500 V, VGS = 0 V
500
-
-
-
-
V
ΔBVDSS
Breakdown Voltage Temperature
Coefficient
I
0.7
V/oC
/
ΔTJ
V
-
-
-
-
-
-
200
500
IDSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μA
VDS = 400 V, TC = 125oC
IGSS
VGS = ±30 V, VDS = 0 V
±100
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 10 A
VDS = 20 V, ID = 10 A
3.0
-
5.0
0.26
-
V
Ω
S
Static Drain to Source On Resistance
Forward Transconductance
-
-
0.22
25
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
2550
350
27
3390
465
40
65
-
pF
pF
pF
nC
nC
nC
VDS = 25 V, VGS = 0 V,
f = 1 MHz
Coss
Crss
Qg(tot)
Qgs
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
50
V
V
DS = 400 V, ID = 20 A,
GS = 10 V
14
(Note 4)
Qgd
20
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
45
120
100
60
100
250
210
130
ns
ns
ns
ns
VDD = 250 V, ID = 20 A,
GS = 10 V, RG = 25 Ω
V
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
20
80
1.5
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, ISD = 20 A
-
V
154
0.5
ns
μC
VGS = 0 V, ISD = 20 A,
dIF/dt = 100 A/μs
Qrr
Reverse Recovery Charge
-
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 5 mH, I = 20 A, V = 50 V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
3. I ≤ 20 A, di/dt ≤ 200 A/μs, V ≤ BV
, starting T = 25°C.
SD
DD
DSS
J
4. Essentially independent of operating temperature typical characteristics.
www.fairchildsemi.com
©2012 Fairchild Semiconductor Corporation
FDB20N50F Rev. C3
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
100
80
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
150oC
10
5.5 V
25oC
10
1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
0.3
0.1
1
4
5
6
7
8
1
10
20
VGS,Gate-Source Voltage[V]
VDS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
0.5
400
100
0.4
150oC
25oC
10
VGS = 10V
0.3
VGS = 20V
0.2
*Notes:
1. VGS = 0V
*Note: TJ = 25oC
50
ID, Drain Current [A]
2. 250μs Pulse Test
1
0.0
0.1
0.5
1.0
1.5
2.0
2.5
0
25
75
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
6000
4500
3000
1500
0
10
C
C
C
= C + C (C = shorted)
gs gd ds
iss
VDS = 100V
= C + C
ds gd
= C
gd
oss
rss
VDS = 250V
Coss
VDS = 400V
8
6
4
2
0
*Note:
1. VGS = 0V
2. f = 1MHz
Ciss
Crss
*Note: ID = 20A
40 50
0.1
1
10
50
0
10
20
30
60
VDS, Drain-Source Voltage [V]
Qg, Total Gate Charge [nC]
www.fairchildsemi.com
©2012 Fairchild Semiconductor Corporation
FDB20N50F Rev. C3
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. Maximum Safe Operating Area
200
1.2
1.1
1.0
100
10 μs
100 μs
1 ms
10
1
10 ms
100 ms
Operation in This Area
is Limited by R DS(on)
DC
*Notes:
1. TC = 25oC
2. TJ = 150oC
0.9
0.1
0.01
*Notes:
1. VGS = 0V
2. ID = 1mA
3. Single Pulse
0.8
-100
1
10
100
800
-50
0
50
100
150
200
o
VDS, Drain-Source Voltage [V]
TJ, Junction Temperature [ C]
Figure 9. Maximum Drain Current
vs. Case Temperature
Figure 10. Unclemped Inductive
Switching Capability
100
25
20
15
10
5
TJ = 25 oC
10
1
0
25
0.001
0.01
0.1
1
10
100
50
75
100
125
150
o
tAV, TIME IN AVALANCHE (ms)
TC, Case Temperature [ C]
Figure 11. Transient Thermal Response Curve
1
0.5
0.2
0.1
0.1
PDM
0.05
t1
t2
0.02
0.01
*Notes:
0.01
1. ZθJC(t) = 0.5oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
single pulse
0.002
10-5
10-4
10-3
10-2
10-1
100
101
t , Rectangular Pulse Duration [sec]
1
www.fairchildsemi.com
©2012 Fairchild Semiconductor Corporation
FDB20N50F Rev. C3
4
I
= const.
G
Figure 12. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
VGS
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
©2012 Fairchild Semiconductor Corporation
FDB20N50F Rev. C3
5
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.fairchildsemi.com
©2012 Fairchild Semiconductor Corporation
FDB20N50F Rev. C3
6
Mechanical Dimensions
2
Figure 16. TO263 (D PAK), Molded, 2-Lead, Surface Mount
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-0R2
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©2012 Fairchild Semiconductor Corporation
FDB20N50F Rev. C3
7
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intended to be an exhaustive list of all such trademarks.
AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
F-PFS™
FRFET
Sync-Lock™
®*
®
®
®
tm
®
Global Power ResourceSM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
Gmax™
GTO™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Dual Cool™
®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
EfficentMax™
ESBC™
®
TRUECURRENT *
μSerDes™
SMART START™
®
Solutions for Your Success™
®
®
SPM
Fairchild
®
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
Fairchild Semiconductor
FACT Quiet Series™
®
®
UHC
®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
mWSaver
OptoHiT™
OPTOLOGIC
OPTOPLANAR
FACT
FAST
®
®
FastvCore™
FETBench™
FPS™
®
®
SupreMOS
SyncFET™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
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First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
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©2012 Fairchild Semiconductor Corporation
FDB20N50F Rev. C3
8
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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