FDB2532-F085 [ONSEMI]
N 沟道，PowerTrench® MOSFET，150V，79A，16mΩ;
| 型号： | FDB2532-F085 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，150V，79A，16mΩ 开关 晶体管 |
| 文件： | 总15页 (文件大小：1016K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
D
MOSFET – N-Channel,
POWERTRENCH)
G
150 V, 79 A, 16 mW
S
FDB2532-F085
Features
DRAIN
(FLANGE)
• R
= 14 mW (Typ.), V = 10 V, I = 33 A
GS D
DS(ON)
• Q (tot) = 82 nC (Typ.), V = 10 V
g
GS
• Low Miller Charge
• Low Q Body Diode
GATE
SOURCE
RR
• UIS Capability (Single Pulse and Repetitive Pulse)
• AEC−Q101 Qualified and PPAP Capable
D2PAK−3
CASE 418AJ
• These Devices are Pb−Free and are RoHS Compliant
Applications
MARKING DIAGRAM
• DC/DC converters and Off−Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24 V and 48 V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42 V Automotive Load Control
• Electronic Valve Train Systems
• Synchronous Rectification
&Z&3&K
FDB2532
&Z
= Assembly Plant Code
&3
&K
= Data Code (Year & Week)
= Lot
FDB2532
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
April, 2023 − Rev. 3
FDB2532−F085/D
FDB2532−F085
MOSFET MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
C
Symbol
Parameter
Value
150
20
Unit
V
V
DSS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
V
GS
V
I
D
− Continuous (T = 25°C, V = 10 V)
79
A
C
GS
− Continuous (T = 100°C, V = 10 V)
56
C
GS
− Continuous (T
= 25°C, V = 10 V,
8
A
amb
GS
R
q
= 43°C/W)
JA
I
Drain Current
− Pulsed
Figure 4
400
A
mJ
W
D
E
AS
Single Pulse Avalanche Energy (Note 1)
Power Dissipation
(T = 25°C)
P
310
D
C
− Derate Above 25°C
Operating and Storage Temperature
2.07
W/°C
°C
T , T
−55 to +175
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Starting T = 25°C, L = 0.5 mH, I = 40 A
J
AS
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.48
43
Unit
R
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient, 1in Copper Pad Area
_C/W
_C/W
q
JC
JA
2
R
q
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Reel Size
Tape Width
24 mm
Quantity
800 Units
2
FDB2532
FDB2532−F085
TO−263 (D −PAK−3)
330 mm
www.onsemi.com
2
FDB2532−F085
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
B
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
I
= 250 mA, V = 0 V
150
V
VDSS
D
GS
I
V
V
V
= 120 V, V = 0 V
1
mA
DSS
DS
DS
GS
GS
= 120 V, V = 0 V, T = 150_C
250
100
GS
C
I
Gate to Source Leakage Current
=
20 V
nA
GSS
ON CHARACTERISTICS
V
GS(TH)
R
DS(ON)
Gate to Source Threshold Voltage
Drain to Source On Resistance
V
= V , I = 250 mA
2.0
4.0
V
GS
DS
D
I
D
I
D
I
D
= 33 A, V = 10 V
0.014
0.016
0.040
0.016
0.024
0.048
W
GS
= 16 A, V = 6 V
GS
= 33 A, V = 10 V, T = 175 °C
GS
C
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 25 V, V = 0 V, f = 1 MHz
5870
615
135
82
pF
pF
pF
nC
iss
DS
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
Total Gate Charge at 10 V
rss
Q
V
GS
V
DD
= 0 V to 10 V,
107
14
g(tot)
= 75 V, I = 33 A, I = 1.0 mA
D
g
Q
Threshold Gate Charge
V
GS
V
DD
= 0 V to 2 V,
11
nC
g(th)
= 75 V, I = 33 A, I = 1.0 mA
D
g
Q
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DD
= 75 V, I = 33 A, I = 1.0 mA
23
13
19
nC
nC
nC
gs
D
g
Q
gs2
Q
gd
RESISTIVE SWITCHING CHARACTERISTICS (V = 10 V)
GS
t
Turn-On Time
Turn-On Delay Time
Rise Time
V
DD
V
GS
= 75 V, I = 33 A,
69
84
ns
ns
ns
ns
ns
ns
ON
D
= 10 V, R = 3.6 W
GS
t
16
30
39
17
d(ON)
t
r
t
Turn-Off Delay Time
Fall Time
d(OFF)
t
f
t
Turn-Off Time
OFF
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Voltage
I
I
I
I
= 33 A
= 16 A
1.25
1
V
V
SD
SD
SD
SD
SD
t
Reverse Recovery Time
= 33 A, dl /dt = 100 A/ms
105
327
ns
nC
rr
SD
Q
Reverse Recovery Charge
= 33 A, dl /dt = 100 A/ms
SD
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Width = 100 s
www.onsemi.com
3
FDB2532−F085
TYPICAL CHARACTERISTICS
T
C
= 25°C UNLESS OTHERWISE NOTED
1.2
1.0
0.8
0.6
0.4
0.2
0
125
V
= 10V
GS
100
75
50
25
0
150
0
25
50
75
100
175
125
o
25
50
75
T , CASE TEMPERATURE ( C)
C
100
125
150
175
o
T
, CASE TEMPERATURE ( C)
C
Figure 1. Normalized Power
Figure 2. Maximum Continuous
Dissipation vs. Ambient Temperature
Drain Current vs Case Temperature
2.0
DUTY CYCLE − DESCENDING ORDER
0.5
0.2
0.1
1.0
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR : D = t /t
SINGLE PULSE
1
2
PEAK T = P
x Z
Q
x R
Q
+ T
JC C
J
DM
JC
0.01
−5
−4
−3
−2
0
1
10
10
10
10
10−1
10
10
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
2000
1000
o
T
= 25 C
C
FOR TEMPERATURES
o
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
ABOVE 25 C DERATE PEAK
CURRENT AS FOLLOWS:
175 − T
C
I = I
25
150
V
= 10V
GS
100
50
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
www.onsemi.com
4
FDB2532−F085
TYPICAL CHARACTERISTICS (CONTINUED)
T
C
= 25°C UNLESS OTHERWISE NOTED
NOTE: Refer to onsemi Application Notes AN−7515 and
AN−7517
1000
100
10
200
10 ms
o
STARTING T = 25 C
J
100
100 ms
o
OPERATION IN THIS
AREA MAY BE
1ms
STARTING T = 150 C
J
10
LIMITED BY r
DS(ON)
10ms
DC
1
If R = 0
= (L)(I )/(1.3*RATED BV
If R p ꢀ
SINGLE PULSE
t
AV
− V
DD
)
AS
DSS
T
= MAX RATED
J
o
T
= 25 C
t
= (L/R)ln[(I *R)/(1.3*RATED BV
− V ) +1]
DD
DSS
C
AV
AS
0.1
1
1
10
, DRAIN TO SOURCE VOLTAGE (V)
100
300
0.001
0.01
0.1
1
V
t
DS
, TIME IN AVALANCHE (ms)
AV
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
180
180
150
120
90
PULSE DURATION = 80 ms
V
= 7V
GS
V
= 10V
GS
DUTY CYCLE = 0.5% MAX
V
150
120
90
60
30
0
= 15V
DD
V
= 6V
GS
o
T
= 175 C
J
o
T
= 25 C
C
60
V
= 5V
GS
o
o
T
J
= 25 C
T
= −55 C
J
30
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
V
, GATE TO SOURCE VOLTAGE (V)
GS
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
18
17
16
15
14
13
3.0
2.5
2.0
1.5
1.0
0.5
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
= 6V
GS
V
= 10V
GS
V
= 10V, I =33A
D
GS
0
20
40
60
80
−80
−40
0
40
80
120
o
160
200
I , DRAIN CURRENT (A)
D
T , JUNCTION TEMPERATURE ( C)
J
Figure 9. Drain to Source On Resistance
vs Drain Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
www.onsemi.com
5
FDB2532−F085
TYPICAL CHARACTERISTICS (CONTINUED)
T
C
= 25°C UNLESS OTHERWISE NOTED
1.2
1.4
1.2
1.0
0.8
0.6
0.4
I
= 250 mA
V
= V , I = 250 mA
DS D
D
GS
1.1
1.0
0.9
−80
−40
0
40
80
120
160
200
−80
−40
0
40
80
120
160
200
o
o
T , JUNCTION TEMPERATURE ( C)
T , JUNCTION TEMPERATURE ( C)
J
J
Figure 11. Normalized Gate Threshold Voltage
vs. Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
10
8
V
= 75V
DD
C
ꢀ
C
+ C
GS GD
ISS
C
@
C
+ C
OSS
DS GD
6
1000
C
ꢀ C
GD
RSS
4
WAVEFORMS IN
DESCENDING ORDER:
2
I
I
= 33A
= 16A
100
50
D
D
V
= 0V, f = 1MHz
1
GS
0
0.1
10
150
0
20
40
60
80
100
V
, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
DS
g
Figure 13. Capacitance vs. Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for
Constant Gate Currents
www.onsemi.com
6
FDB2532−F085
TEST CIRCUITS WAVEFORMS
V
DS
L
VARY tp TO OBTAIN
REQUIRED PEAK I
AS
R
G
+
V
DD
DUT
−
V
GS
tp
0 V
I
AS
0.01 W
Figure 15. Unclamped Energy
Test Circuit
Figure 16. Unclamped Energy
Waveforms
V
DS
L
V
GS
+
−
V
DD
DUT
I
g(REF)
Figure 17. Gate Charge Test Circuit
Figure 18. Gate Charge Waveforms
V
DS
R
L
+
−
V
GS
V
DD
DUT
R
GS
V
GS
Figure 19. Switching Time Test Circuit
Figure 20. Switching Time Waveforms
www.onsemi.com
7
FDB2532−F085
THERMAL RESISTANCE VS. MOUNTING PAD
AREA
onsemi provides thermal information to assist the
designer’s preliminary application evaluation. Figure 21
The maximum rated junction temperature, T , and the
defines the R
for the device as a function of the top copper
JM
JA
q
thermal resistance of the heat dissipating path determines
(component side) area. This is for a horizontally positioned
FR−4 board with 1oz copper after 1 000 seconds of steady
state power with no air flow. This graph provides the
necessary information for calculation of the steady state
junction temperature or power dissipation. Pulse
applications can be evaluated using the onsemi device Spice
thermal model or manually utilizing the normalized
maximum transient thermal impedance curve.
Thermal resistances corresponding to other copper areas
can be obtained from Figure 21 or by calculation using
Equation 2 or 3. Equation 2 is used for copper area defined
in inches square and equation 3 is for area in centimeter
square. The area, in square inches or square centimeters is
the top copper area including the gate and source pads.
the maximum allowable device power dissipation, P , in
DM
an application. Therefore the application’s ambient
temperature, T (°C), and thermal resistance R
(°C/W)
qJA
A
must be reviewed to ensure that T is never exceeded.
JM
Equation 1 mathematically represents the relationship and
serves as the basis for establishing the rating of the part.
(TJM * TA)
+
(eq. 1)
PDM
RQJA
In using surface mount devices such as the TO−263
2
(D −PAK−3) package, the environment in which it is applied
will have a significant influence on the part’s current and
maximum power dissipation ratings. Precise determination
of P
is complex and influenced by many factors:
DM
19.84
(0.262 ) Area)
1. Mounting pad area onto which the device is
attached and whether there is copper on one side
or both sides of the board.
2. The number of copper layers and the thickness of
the board.
RQJA + 26.51 )
Area in Inches Squared.
RQJA + 26.51 )
(eq. 2)
128
(1.69 ) Area)
(eq. 3)
Area in Centimeters Squared.
3. The use of external heat sinks.
4. The use of thermal vias.
5. Air flow and board orientation.
6. For non steady state applications, the pulse width,
the duty cycle and the transient thermal response
of the part, the board and the environment they
are in.
80
60
40
R
= 26.51+ 19.84/(0.262+Area) EQ.2
QJA
R
= 26.51+ 128/(1.69+Area) EQ.3
QJA
20
0.1
1
10
(0.645)
(6.45)
(64.5)
2
2
AREA, TOP COPPER AREA in (cm )
Figure 21. Thermal Resistance vs. Mounting Pad Area
www.onsemi.com
8
FDB2532−F085
PSPICE ELECTRICAL MODEL
.SUBCKT FDB2532 2 1 3 ; rev April 2002
CA 12 8 1.4e−9
CB 15 14 1.6e−9
CIN 6 8 5.61e−9
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
Ebreak 11 7 17 18 159
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
It 8 17 1
Lgate 1 9 9.56e−9
Ldrain 2 5 1.0e−9
Lsource 3 7 7.71e−9
RLgate 1 9 95.6
RLdrain 2 5 10
RLsource 3 7 77.1
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 9.6e−3
Rgate 9 20 1.01
RSLC1 5 51 RSLCMOD 1.0e−6
RSLC2 5 50 1.0e3
Rsource 8 7 RsourceMOD 3.0e−3
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e−6*190),3))}
.MODEL DbodyMOD D (IS=6.0E−11 N=1.09 RS=2.3e−3 TRS1=3.0e−3 TRS2=1.0e−6
+ CJO=3.9e−9 M=0.65 TT=4.8e−8 XTI=4.2)
.MODEL DbreakMOD D (RS=0.17 TRS1=3.0e−3 TRS2=−8.9e−6)
.MODEL DplcapMOD D (CJO=1.0e−9 IS=1.0e−30 N=10 M=0.6)
.MODEL MmedMOD NMOS (VTO=3.55 KP=10 IS=1e−30 N=10 TOX=1 L=1u W=1u RG=1.01)
.MODEL MstroMOD NMOS (VTO=4.2 KP=145 IS=1e−30 N=10 TOX=1 L=1u W=1u)
.MODEL MweakMOD NMOS (VTO=2.9 KP=0.05 IS=1e−30 N=10 TOX=1 L=1u W=1u RG=10.1 RS=0.1)
.MODEL RbreakMOD RES (TC1=1.1e−3 TC2=−9.0e−7)
.MODEL RdrainMOD RES (TC1=9.0e−3 TC2=3.5e−5)
.MODEL RSLCMOD RES (TC1=3.4e−3 TC2=1.5e−6)
www.onsemi.com
9
FDB2532−F085
.MODEL RsourceMOD RES (TC1=4.0e−3 TC2=1.0e−6)
.MODEL RvthresMOD RES (TC1=−4.1e−3 TC2=−1.4e−5)
.MODEL RvtempMOD RES (TC1=−4.0e−3 TC2=3.5e−6)
.MODEL S1AMOD VSWITCH (RON=1e−5 ROFF=0.1 VON=−6.0 VOFF=−4.0)
.MODEL S1BMOD VSWITCH (RON=1e−5 ROFF=0.1 VON=−4.0 VOFF=−6.0)
.MODEL S2AMOD VSWITCH (RON=1e−5 ROFF=0.1 VON=−1.4 VOFF=1.0)
.MODEL S2BMOD VSWITCH (RON=1e−5 ROFF=0.1 VON=1.0 VOFF=−1.4)
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub−Circuit for the Power MOSFET
Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by
William J. Hepp and C. Frank Wheatley.
Figure 22. PSPICE Electrical Model
www.onsemi.com
10
FDB2532−F085
SABER ELECTRICAL MODEL
REV April 2002
ttemplate FDB2532 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl=6.0e−11,nl=1.09,rs=2.3e−3,trs1=3.0e−3,trs2=1.0e−6,cjo=3.9e−9,m=0.65,tt=4.8e−8,xti=4.2)
dp..model dbreakmod = (rs=0.17,trs1=3.0e−3,trs2=−8.9e−6)
dp..model dplcapmod = (cjo=1.0e−9,isl=10.0e−30,nl=10,m=0.6)
m..model mmedmod = (type=_n,vto=3.55,kp=10,is=1e−30, tox=1)
m..model mstrongmod = (type=_n,vto=4.2,kp=145,is=1e−30, tox=1)
m..model mweakmod = (type=_n,vto=2.9,kp=0.05,is=1e−30, tox=1,rs=0.1)
sw_vcsp..model s1amod = (ron=1e−5,roff=0.1,von=−6.0,voff=−4.0)
sw_vcsp..model s1bmod = (ron=1e−5,roff=0.1,von=−4.0,voff=−6.0)
sw_vcsp..model s2amod = (ron=1e−5,roff=0.1,von=−1.4,voff=1.0)
sw_vcsp..model s2bmod = (ron=1e−5,roff=0.1,von=1.0,voff=−1.4)
c.ca n12 n8 = 1.4e−9
c.cb n15 n14 = 1.6e−9
c.cin n6 n8 = 5.61e−9
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
spe.ebreak n11 n7 n17 n18 = 159
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evthres n6 n21 n19 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
i.it n8 n17 = 1
l.lgate n1 n9 = 9.56e−9
l.ldrain n2 n5 = 1.0e−9
l.lsource n3 n7 = 7.71e−9
res.rlgate n1 n9 = 95.6
res.rldrain n2 n5 = 10
res.rlsource n3 n7 = 77.1
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1=1.1e−3,tc2=−9.0e−7
res.rdrain n50 n16 = 9.6e−3, tc1=9.0e−3,tc2=3.5e−5
res.rgate n9 n20 = 1.01
res.rslc1 n5 n51 = 1.0e−6, tc1=3.4e−3,tc2=1.5e−6
res.rslc2 n5 n50 = 1.0e3
res.rsource n8 n7 = 3.0e−3, tc1=4.0e−3,tc2=1.0e−6
res.rvthres n22 n8 = 1, tc1=−4.1e−3,tc2=−1.4e−5
res.rvtemp n18 n19 = 1, tc1=−4.0e−3,tc2=3.5e−6
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
www.onsemi.com
11
FDB2532−F085
v.vbat n22 n19 = dc=1
equations {
i (n51−>n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e−9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/190))** 3))
}
}
Figure 23. SABER Electrical Model
www.onsemi.com
12
FDB2532−F085
SPICE THERMAL MODEL
th
JUNCTION
REV 26 February 2002
FDB2532
CTHERM1 TH 6 7.5e−3
CTHERM2 6 5 8.0e−3
CTHERM3 5 4 9.0e−3
CTHERM4 4 3 2.4e−2
CTHERM5 3 2 3.4e−2
CTHERM6 2 TL 6.5e−2
CTHERM1
RTHERM1
6
RTHERM1 TH 6 3.1e−4
RTHERM2 6 5 2.5e−3
RTHERM3 5 4 2.0e−2
RTHERM4 4 3 8.0e−2
RTHERM5 3 2 1.2e−1
RTHERM6 2 TL 1.3e−1
CTHERM2
CTHERM3
CTHERM4
RTHERM2
5
SABER THERMAL MODEL
SABER thermal model FDB2532
template thermal_model th tl
thermal_c th, tl
RTHERM3
{
4
3
2
ctherm.ctherm1 th 6 =7.5e−3
ctherm.ctherm2 6 5 =8.0e−3
ctherm.ctherm3 5 4 =9.0e−3
ctherm.ctherm4 4 3 =2.4e−2
ctherm.ctherm5 3 2 =3.4e−2
ctherm.ctherm6 2 tl =6.5e−2
RTHERM4
rrtherm.rtherm1 th 6 =3.1e−4
rtherm.rtherm2 6 5 =2.5e−3
rtherm.rtherm3 5 4 =2.0e−2
rtherm.rtherm4 4 3 =8.0e−2
rtherm.rtherm5 3 2 =1.2e−1
rtherm.rtherm6 2 tl =1.3e−1
}
CTHERM5
RTHERM5
CTHERM6
RTHERM6
tl
CASE
Figure 24. Thermal Model
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
www.onsemi.com
13
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE F
DATE 11 MAR 2021
SCALE 1:1
XXXXXX = Specific Device Code
A
= Assembly Location
WL
Y
= Wafer Lot
= Year
GENERIC MARKING DIAGRAMS*
WW
W
M
G
AKA
= Work Week
= Week Code (SSG)
= Month Code (SSG)
= Pb−Free Package
= Polarity Indicator
XX
AYWW
XXXXXXXXG
AKA
XXXXXXXXG
AYWW
XXXXXX
XXYMW
XXXXXXXXX
AWLYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
IC
Standard
Rectifier
SSG
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON56370E
D2PAK−3 (TO−263, 3−LEAD)
PAGE 1 OF 1
DESCRIPTION:
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明