FDB3502 [ONSEMI]
75V N沟道PowerTrench® MOSFET;
| 型号： | FDB3502 |
| 厂家： | 
ONSEMI |
| 描述： | 75V N沟道PowerTrench® MOSFET 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：394K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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May 2008
FDB3502
tm
N-Channel Power Trench® MOSFET
75V, 14A, 47mΩ
Features
General Description
Max rDS(on) = 47mΩ at VGS = 10V, ID = 6A
100% UIL Tested
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
RoHS Compliant
Application
Synchronous rectifier
D
D
G
G
S
TO-263AB
FDB Series
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
75
V
V
±20
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
TC = 25°C
C = 25°C
14
T
22
ID
A
TA = 25°C
(Note 1a)
(Note 3)
6
-Pulsed
40
EAS
Single Pulse Avalanche Energy
Power Dissipation
54
41
mJ
W
TC = 25°C
TA = 25°C
PD
Power Dissipation
(Note 1a)
3.1
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
3
°C/W
(Note 1a)
40
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
330 mm
Tape Width
24 mm
Quantity
FDB3502
FDB3502
TO-263AB
800 units
1
©2008 Fairchild Semiconductor Corporation
FDB3502 Rev.C2
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
75
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to 25°C
70
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VGS = 0V, VDS = 60V,
VGS = ±20V, VDS = 0V
1
µA
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
2.5
3.8
-10
4.5
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to 25°C
mV/°C
VGS = 10V, ID = 6A
37
63
13
47
80
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
mΩ
VGS = 10V, ID = 6A, TJ = 125°C
VDD = 10V, ID = 6A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
615
75
815
105
40
pF
pF
pF
Ω
VDS = 40V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
35
f = 1MHz
1.5
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
9
3
17
10
22
10
15
ns
ns
VDD = 40V, ID = 6A,
VGS = 10V, RGEN = 6Ω
Turn-Off Delay Time
Fall Time
13
3
ns
ns
Qg
Total Gate Charge at 10V
Gate to Source Charge
Gate to Drain “Miller” Charge
11
4
nC
nC
nC
VDD = 40V
ID = 6A
Qgs
Qgd
3
Drain-Source Diode Characteristics
VGS = 0V, IS = 2.6A
VGS = 0V, IS = 6A
(Note 2)
(Note 2)
0.78
0.83
25
1.2
1.3
41
VSD
Source to Drain Diode Forward Voltage
V
trr
Reverse Recovery Time
ns
IF = 6A, di/dt = 100A/µs
Qrr
Reverse Recovery Charge
17
32
nC
Notes:
1:
R
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θJA
θJC
is guaranteed by design while R
is determined by the user’s board design.
θJA
2
a. 40°C/W when mounted on a 1 in pad of 2 oz copper
b. 62.5°C/W when mounted on a minimum pad.
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting T = 25°C, L = 3mH, I = 6A, V = 75V, V = 10V.
J
AS
DD
GS
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FDB3502 Rev.C2
2
Typical Characteristics TJ = 25°C unless otherwise noted
40
3.0
2.5
2.0
1.5
1.0
0.5
VGS = 10V
VGS = 6V
35
30
25
20
15
10
5
VGS = 8V
VGS = 7V
VGS = 9V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 8V
VGS = 9V
VGS = 7V
VGS = 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 6V
0
0
1
2
3
4
5
0
5
10
15
20
25
30
35
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT(A)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
2.0
150
120
90
60
30
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
ID = 6A
GS = 10V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
ID = 6A
TJ = 125oC
TJ = 25oC
-75 -50 -25
0
25 50 75 100 125 150
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
F i gu re 3 . N orma li zed On - Res is ta nc e
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
40
40
VGS = 0V
TJ = 150oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
10
30
VDS = 7V
1
TJ = 25oC
20
TJ = 150oC
0.1
TJ = 25oC
10
0.01
TJ = -55oC
TJ = -55oC
0.001
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FDB3502 Rev.C2
3
Typical Characteristics TJ = 25°C unless otherwise noted
10
1000
100
10
VDD = 40V
ID = 6A
Ciss
8
6
4
2
0
VDD = 30V
VDD = 50V
Coss
f = 1MHz
= 0V
Crss
V
GS
0
2
4
6
8
10
12
0.1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
25
20
15
10
5
10
TJ = 25oC
VGS = 10V
Limited by Package
θJC = 3oC/W
TJ = 125oC
R
0
25
1
0.01
50
75
100
125
150
0.1
1
10
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE(ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Case Temperature
104
100
10
1
VGS = 10V
103
102
10
100us
1ms
SINGLE PULSE
θJC = 3oC/W
TC = 25oC
R
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
TJ = MAX RATED
RθJC = 3oC/W
10ms
100ms
DC
T
C = 25oC
0.1
0.05
10-5
10-4
10-3
t, PULSE WIDTH (sec)
10-2
10-1
0.1
1
10
100
300
1
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FDB3502 Rev.C2
4
Typical Characteristics TJ = 25°C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
P
0.05
0.02
DM
0.1
0.01
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
RθJC = 3oC/W
1
2
PEAK T = P
x Z x R + T
θJc θJc C
J
DM
0.01
10-5
10-4
10-3
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
P
DM
t
1
SINGLE PULSE
t
2
R
θJA = 62.5oC/W
NOTES:
DUTY FACTOR: D = t /t
(Note 1b)
1
2
PEAK T = P
J
x Z
x R
+ T
DM
θJA
θJA A
0.001
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 14. Transient Thermal Response Curve
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FDB3502 Rev.C2
5
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Saving our world 1mW at a time™ TinyPWM™
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®
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tm
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in the labeling, can be reasonably expected to result in a
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Definition of Terms
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This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Advance Information
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Full Production
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Fairchild Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I34
©2008 Fairchild Semiconductor Corporation
FDB3502 Rev.C2
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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