FDB3672-F085 [ONSEMI]
100 V、44 A、24 mΩ、D2PAKN 沟道 UltraFET® Trench;
| 型号： | FDB3672-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 100 V、44 A、24 mΩ、D2PAKN 沟道 UltraFET® Trench 开关 晶体管 |
| 文件： | 总12页 (文件大小：566K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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FDB3672-F085
N-Channel PowerTrench® MOSFET
100V, 44A, 28mΩ
Applications
Features
•
•
•
•
•
•
•
•
r
= 24mΩ (Typ.), V = 10V, I = 44A
•
•
•
•
•
•
•
DC/DC converters and Off-Line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
Direct Injection / Diesel Injection Systems
42V Automotive Load Control
DS(ON)
GS
D
Q (tot) = 24nC (Typ.), V = 10V
g
GS
Low Miller Charge
Low Q Body Diode
RR
Optimized efficiency at high frequencies
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
Electronic Valve Train Systems
Formerly developmental type 82760
DRAIN
D
(FLANGE)
GATE
SOURCE
G
TO-263AB
FDB SERIES
S
MOSFET Maximum Ratings T = 25°C unless otherwise noted
C
Symbol
Parameter
Ratings
100
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
V
V
DSS
GS
±20
Drain Current
o
44
31
A
A
Continuous (T = 25 C, V = 10V)
C
GS
o
I
Continuous (T = 100 C, V = 10V)
C GS
D
o
o
Continuous (T
= 25 C, V = 10V, R = 43 C/W)
θJA
7.2
A
amb
GS
Pulsed
Figure 4
120
A
E
P
Single Pulse Avalanche Energy (Note 1)
Power dissipation
mJ
W
AS
120
D
o
o
Derate above 25 C
0.8
W/ C
o
T , T
Operating and Storage Temperature
-55 to 175
C
J
STG
Thermal Characteristics
o
R
R
R
Thermal Resistance Junction to Case TO-263
1.25
62
C/W
θJC
θJA
θJA
o
Thermal Resistance Junction to Ambient TO-263 (Note 2)
C/W
2
o
Thermal Resistance Junction to Ambient TO-263, 1in copper pad area
43
C/W
©2009 Semiconductor Components Industries, LLC.
Publication Order Number:
September-2017, Rev. 1
FDB3672-F085/D
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDB3672-F085
FDB3672
TO-263AB
330mm
24mm
800 units
Electrical Characteristics T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
= 250µA, V = 0V
100
-
-
-
-
-
V
VDSS
D
GS
V
V
= 80V
= 0V
-
-
-
1
DS
GS
I
I
µA
nA
DSS
o
T = 150 C
250
±100
C
V
= ±20V
GSS
GS
On Characteristics
V
Gate to Source Threshold Voltage
V
= V , I = 250µA
2
-
-
4
V
GS(TH)
GS
DS
D
I
I
= 44A, V = 10V
0.024 0.028
0.031 0.047
0.054 0.068
D
D
GS
r
Drain to Source On Resistance
= 21A, V = 6V,
-
Ω
DS(ON)
GS
o
I =44A, V =10V, T =175 C
-
D
GS
C
Dynamic Characteristics
C
C
C
Input Capacitance
-
-
-
-
-
-
-
-
1710
247
62
-
-
pF
pF
pF
nC
nC
nC
nC
nC
ISS
V
= 25V, V = 0V,
GS
DS
Output Capacitance
OSS
RSS
f = 1MHz
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
-
Q
Q
Q
Q
Q
V
V
= 0V to 10V
= 0V to 2V
24
31
4.5
-
g(TOT)
g(TH)
gs
GS
3.5
11
GS
V
= 50V
DD
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
I = 44A
D
I = 1.0mA
g
7.2
4.5
-
gs2
-
gd
Resistive Switching Characteristics (V = 10V)
GS
t
t
t
t
t
t
Turn-On Time
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
104
ns
ns
ns
ns
ns
ns
ON
11
59
26
44
-
-
d(ON)
-
V
V
= 50V, I = 44A
r
DD
GS
D
= 10V, R = 11.0Ω
Turn-Off Delay Time
Fall Time
-
-
GS
d(OFF)
f
Turn-Off Time
104
OFF
Drain-Source Diode Characteristics
I
I
I
I
= 44A
= 21A
-
-
-
-
-
-
-
-
1.25
1.0
52
V
V
SD
SD
SD
SD
V
Source to Drain Diode Voltage
SD
t
Reverse Recovery Time
= 44A, dI /dt =100A/µs
ns
nC
rr
SD
Q
Reverse Recovered Charge
= 44A, dI /dt =100A/µs
80
RR
SD
Notes:
1: Starting T = 25°C, L = 0.6mH, I = 20A.
J
AS
2: Pulse Width = 100s
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2
Typical Characteristics T = 25°C unless otherwise noted
C
1.2
50
V
= 10V
GS
1.0
40
0.8
30
0.6
20
0.4
10
0.2
0
0
0
25
50
75
100
150
175
125
o
25
50
75
100
125
150
175
o
T
, CASE TEMPERATURE ( C)
C
T , CASE TEMPERATURE ( C)
C
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
1
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
1
2
PEAK T = P
x Z
x R
+ T
J
DM
θJC
θJC C
0.01
-5
-4
-3
-2
-1
0
1
10
10
10
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
500
o
T
= 25 C
C
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES
o
ABOVE 25 C DERATE PEAK
CURRENT AS FOLLOWS:
175 - T
150
C
I = I
25
V
= 10V
GS
100
30
-5
-4
-3
-2
-1
0
1
10
10
10
10
t, PULSE WIDTH (s)
10
10
10
Figure 4. Peak Current Capability
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3
Typical Characteristics T = 25°C unless otherwise noted
C
200
100
300
100
If R = 0
= (L)(I )/(1.3*RATED BV
10µs
t
AV
- V
DD
)
AS
DSS
If R ≠ 0
t
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
DD
AV
AS
DSS
100µs
10
1
o
OPERATION IN THIS
AREA MAY BE
STARTING T = 25 C
J
LIMITED BY r
DS(ON)
10
1ms
10ms
DC
o
STARTING T = 150 C
J
SINGLE PULSE
T
= MAX RATED
= 25 C
J
o
T
C
1
0.1
0.001
0.01
0.1
1
10
1
10
, DRAIN TO SOURCE VOLTAGE (V)
100
200
V
t , TIME IN AVALANCHE (ms)
AV
DS
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
80
80
PULSE DURATION = 80µs
o
T
= 25 C
C
V
= 10V
DUTY CYCLE = 0.5% MAX
GS
V
= 7V
GS
V
= 15V
DD
60
40
20
0
60
40
20
0
V
= 6V
GS
o
T
= 175 C
J
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
o
T
= 25 C
J
o
T
= -55 C
J
V
= 5V
2.0
GS
3.5
4.0
4.5
5.0
5.5
6.0
6.5
0
0.5
1.0
1.5
2.5
3.0
V
, GATE TO SOURCE VOLTAGE (V)
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
GS
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
40
35
30
25
20
15
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
0.5
V
= 6V
GS
V
= 10V
GS
V
= 10V, I = 44A
D
GS
0
10
20
30
40
50
-80
-40
0
40
80
120
160
200
o
I , DRAIN CURRENT (A)
T , JUNCTION TEMPERATURE ( C)
D
J
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
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4
Typical Characteristics T = 25°C unless otherwise noted
C
1.2
1.0
0.8
0.6
0.4
1.2
1.1
1.0
0.9
I
= 250µA
D
V
= V , I = 250µA
DS D
GS
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
o
o
T , JUNCTION TEMPERATURE ( C)
T , JUNCTION TEMPERATURE ( C)
J
J
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
3000
10
V
= 50V
DD
C
= C + C
GS GD
ISS
1000
100
10
8
6
4
2
0
C
C
+ C
OSS
DS GD
C
= C
GD
RSS
WAVEFORMS IN
DESCENDING ORDER:
I
I
= 44A
= 22A
V
= 0V, f = 1MHz
D
D
GS
0
5
10
15
20
25
0.1
1
10
100
V
, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
DS
g
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
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5
Test Circuits and Waveforms
V
BV
DSS
DS
t
P
V
DS
L
I
AS
V
DD
VARY t TO OBTAIN
P
+
-
R
REQUIRED PEAK I
G
AS
V
DD
V
GS
DUT
t
P
I
0V
AS
0
0.01Ω
t
AV
Figure 15. Unclamped Energy Test Circuit
Figure 16. Unclamped Energy Waveforms
V
DS
V
Q
DD
g(TOT)
V
DS
L
V
= 10V
GS
V
GS
+
-
V
DD
V
GS
V
= 2V
DUT
GS
Q
gs2
0
I
g(REF)
Q
g(TH)
Q
Q
gd
gs
I
g(REF)
0
Figure 17. Gate Charge Test Circuit
Figure 18. Gate Charge Waveforms
V
DS
t
t
ON
OFF
t
d(OFF)
t
d(ON)
R
t
t
f
L
r
V
0
DS
90%
90%
+
-
V
GS
V
DD
10%
10%
DUT
90%
50%
R
GS
V
GS
50%
PULSE WIDTH
10%
V
GS
0
Figure 19. Switching Time Test Circuit
Figure 20. Switching Time Waveforms
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6
Thermal Resistance vs. Mounting Pad Area
The maximum rated junction temperature, T , and the
thermal resistance of the heat dissipating path determines
80
60
40
20
JM
R
= 26.51+ 19.84/(0.262+Area) EQ.2
θJA
the maximum allowable device power dissipation, P , in an
DM
R
= 26.51+ 128/(1.69+Area) EQ.3
θJA
application.
Therefore the application’s ambient
o
o
temperature, T ( C), and thermal resistance R
( C/W)
A
θJA
must be reviewed to ensure that T
is never exceeded.
JM
Equation 1 mathematically represents the relationship and
serves as the basis for establishing the rating of the part.
(T
– T )
JM
A
(EQ. 1)
P
= -----------------------------
DM
RθJA
In using surface mount devices such as the TO-252
package, the environment in which it is applied will have a
significant influence on the part’s current and maximum
0.1
(0.645)
1
10
(6.45)
(64.5)
power dissipation ratings. Precise determination of P
complex and influenced by many factors:
is
DM
2
2
AREA, TOP COPPER AREA in (cm )
Figure 21. Thermal Resistance vs Mounting
Pad Area
1. Mounting pad area onto which the device is attached and
whether there is copper on one side or both sides of the
board.
2. The number of copper layers and the thickness of the
board.
3. The use of external heat sinks.
4. The use of thermal vias.
5. Air flow and board orientation.
6. For non steady state applications, the pulse width, the
duty cycle and the transient thermal response of the part,
the board and the environment they are in.
ON Semiconductor provides thermal information to
assist
evaluation. Figure 21
defines the R for the device as a function of the top
the
designer’s
preliminary
application
θJA
copper (component side) area. This is for a horizontally
positioned FR-4 board with 1oz copper after 1000 seconds
of steady state power with no air flow. This graph provides
the necessary information for calculation of the steady state
junction temperature or power dissipation. Pulse
applications
can
be
evaluated
using
the
ON
Semiconductor device Spice thermal model or manually
utilizing the normalized maximum transient thermal
impedance curve.
Thermal resistances corresponding to other copper areas
can be obtained from Figure 21 or by calculation using
Equation 2 or 3. Equation 2 is used for copper area defined
in inches square and equation 3 is for area in centimeters
square. The area, in square inches or square centimeters is
the top copper area including the gate and source pads.
19.84
(0.262 + Area)
R
R
= 26.51 + ------------------------------------
(EQ. 2)
θJA
θJA
Area in Inches Squared
128
= 26.51 + ---------------------------------
(EQ. 3)
(1.69 + Area)
Area in Centimeters Squared
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7
PSPICE Electrical Model
.SUBCKT FDB3672 2 1 3 ;
CA 12 8 5.8e-10
Cb 15 14 6.8e-10
Cin 6 8 1.6e-9
rev May 2004
LDRAIN
DPLCAP
DRAIN
2
5
10
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
RLDRAIN
RSLC1
51
DBREAK
+
RSLC2
5
51
ESLC
11
Ebreak 11 7 17 18 105
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
-
+
50
-
17
DBODY
RDRAIN
6
8
EBREAK 18
-
ESG
EVTHRES
+
16
21
+
-
19
8
MWEAK
LGATE
EVTEMP
RGATE
GATE
1
+
6
-
18
22
It 8 17 1
MMED
9
20
MSTRO
8
RLGATE
Lgate 1 9 9.56e-9
Ldrain 2 5 1.0e-9
Lsource 3 7 4.45e-9
LSOURCE
CIN
SOURCE
3
7
RSOURCE
RLSOURCE
RLgate 1 9 95.6
RLdrain 2 5 10
RLsource 3 7 44.5
S1A
S2A
RBREAK
12
15
13
8
14
13
17
18
RVTEMP
19
S1B
S2B
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
13
CB
CA
IT
14
-
+
+
VBAT
6
8
5
8
EGS
EDS
+
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 6.0e-3
Rgate 9 20 1.5
-
-
8
22
RVTHRES
RSLC1 5 51 RSLCMOD 1.0e-6
RSLC2 5 50 1.0e3
Rsource 8 7 RsourceMOD 9.5e-3
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*98),3))}
.MODEL DbodyMOD D (IS=1.0E-11 N=1.05 RS=3.7e-3 TRS1=2.5e-3 TRS2=1.0e-6
+ CJO=1.2e-9 M=0.58 TT=3.75e-8 XTI=4.0)
.MODEL DbreakMOD D (RS=15 TRS1=4.0e-3 TRS2=-5.0e-6)
.MODEL DplcapMOD D (CJO=3.8e-10 IS=1.0e-30 N=10 M=0.60)
.MODEL MmedMOD NMOS (VTO=3.6 KP=3 IS=1e-40 N=10 TOX=1 L=1u W=1u RG=1.5)
.MODEL MstroMOD NMOS (VTO=4.3 KP=59 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MweakMOD NMOS (VTO=3.09 KP=0.05 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=15 RS=0.1)
.MODEL RbreakMOD RES (TC1=9.0e-4 TC2=-1.0e-7)
.MODEL RdrainMOD RES (TC1=11.0e-3 TC2=5.0e-5)
.MODEL RSLCMOD RES (TC1=3.0e-3 TC2=1.0e-6)
.MODEL RsourceMOD RES (TC1=4.0e-3 TC2=1.0e-6)
.MODEL RvthresMOD RES (TC1=-3.5e-3 TC2=-1.5e-5)
.MODEL RvtempMOD RES (TC1=-4.3e-3 TC2=1.5e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-5.0 VOFF=-3.5)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.5 VOFF=-5.0)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.5 VOFF=0.3)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=0.3 VOFF=-0.5)
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
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8
SABER Electrical Model
REV May 2004
template FDB3672 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl=1.0e-11,nl=1.05,rs=3.7e-3,trs1=2.5e-3,trs2=1.0e-6,cjo=1.2e-9,m=0.58,tt=3.75e-8,xti=4.0)
dp..model dbreakmod = (rs=15,trs1=4.0e-3,trs2=-5.0e-6)
dp..model dplcapmod = (cjo=3.8e-10,isl=10.0e-30,nl=10,m=0.60)
m..model mmedmod = (type=_n,vto=3.6,kp=3,is=1e-40, tox=1)
m..model mstrongmod = (type=_n,vto=4.3,kp=59,is=1e-30, tox=1)
LDRAIN
m..model mweakmod = (type=_n,vto=3.09,kp=0.05,is=1e-30, tox=1,rs=0.1)
DPLCAP
DRAIN
2
5
sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-5.0,voff=-3.5)
sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-3.5,voff=-5.0) 10
sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-0.5,voff=0.3)
sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=0.3,voff=-0.5)
c.ca n12 n8 = 5.8e-10
c.cb n15 n14 = 6.8e-10
c.cin n6 n8 = 1.6e-9
RLDRAIN
RSLC1
51
RSLC2
ISCL
DBREAK
11
50
-
RDRAIN
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
6
8
ESG
DBODY
EVTHRES
+
16
21
+
-
19
8
MWEAK
LGATE
EVTEMP
RGATE
GATE
1
+
6
spe.ebreak n11 n7 n17 n18 = 105
spe.eds n14 n8 n5 n8 = 1
-
18
22
EBREAK
+
MMED
9
20
MSTRO
8
17
18
-
RLGATE
spe.egs n13 n8 n6 n8 = 1
LSOURCE
spe.esg n6 n10 n6 n8 = 1
spe.evthres n6 n21 n19 n8 = 1
CIN
SOURCE
3
7
spe.evtemp n20 n6 n18 n22 = 1
RSOURCE
RLSOURCE
S1A
S2A
i.it n8 n17 = 1
RBREAK
12
15
13
8
14
13
17
18
l.lgate n1 n9 = 95.6e-9
l.ldrain n2 n5 = 1.0e-9
l.lsource n3 n7 = 4.45e-9
RVTEMP
19
S1B
S2B
13
CB
CA
IT
14
-
+
+
VBAT
res.rlgate n1 n9 = 9.56
res.rldrain n2 n5 = 10
res.rlsource n3 n7 = 44.5
6
8
5
8
EGS
EDS
+
-
-
8
22
RVTHRES
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1=9.0e-4,tc2=-1.0e-7
res.rdrain n50 n16 = 6.0e-3, tc1=11.0e-3,tc2=5.0e-5
res.rgate n9 n20 = 1.5
res.rslc1 n5 n51 = 1.0e-6, tc1=3.0e-3,tc2=1.0e-6
res.rslc2 n5 n50 = 1.0e3
res.rsource n8 n7 = 9.5e-3, tc1=4.0e-3,tc2=1.0e-6
res.rvthres n22 n8 = 1, tc1=-3.5e-3,tc2=-1.5e-5
res.rvtemp n18 n19 = 1, tc1=-4.3e-3,tc2=1.5e-6
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/98))** 3))
}
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9
SPICE Thermal Model
JUNCTION
th
REV May 2004
FDB3672
CTHERM1 TH 6 3.2e-3
CTHERM2 6 5 3.3e-3
CTHERM3 5 4 3.4e-3
CTHERM4 4 3 3.5e-3
CTHERM5 3 2 6.4e-3
CTHERM6 2 TL 1.9e-2
RTHERM1
RTHERM2
RTHERM3
RTHERM4
RTHERM5
RTHERM6
CTHERM1
6
RTHERM1 TH 6 5.5e-4
RTHERM2 6 5 5.0e-3
RTHERM3 5 4 4.5e-2
RTHERM4 4 3 10.5e-2
RTHERM5 3 2 3.4e-1
RTHERM6 2 TL 3.5e-1
CTHERM2
CTHERM3
CTHERM4
CTHERM5
CTHERM6
5
SABER Thermal Model
SABER thermal model FDB3672
template thermal_model th tl
thermal_c th, tl
{
cctherm.ctherm1 th 6 =3.2e-3
ctherm.ctherm2 6 5 =3.3e-3
ctherm.ctherm3 5 4 =3.4e-3
ctherm.ctherm4 4 3 =3.5e-3
ctherm.ctherm5 3 2 =6.4e-3
ctherm.ctherm6 2 tl =1.9e-2
4
3
2
rtherm.rtherm1 th 6 =5.5e-4
rtherm.rtherm2 6 5 =5.0e-3
rtherm.rtherm3 5 4 =4.5e-2
rtherm.rtherm4 4 3 =10.5e-2
rtherm.rtherm5 3 2 =3.4e-1
rtherm.rtherm6 2 tl =3.5e-1
}
tl
CASE
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10
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